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1.
We present the novel use of spectroscopic ellipsometry (SE) for the development of a-Si:H solar cell. SE is a very fast and useful tool to measure various optical properties of thin film. In the case of a-Si:H thin film analysis, generally, SE is used to estimate the film thickness, roughness, void fraction, optical constants such as (n,k), and so forth. In this study, optical parameters from SE measurements were analyzed with relation to structural and electrical properties of a-Si:H thin film for solar cell. By analyzing IR absorption spectra and conductivity measurements, it was affirmed that <ε2> and parameter A by Tauc-Lorentz model fitting of SE data are representative parameters qualifying a-Si:H thin film, and that they have close relationships with FF and light induced degradation property of solar cells. Based on the analysis, solar cells that have i-layers with various Eg were optimized. By this research, easier and faster methodology to develop a-Si:H thin film for thin film Si solar cells using SE measurements was established.  相似文献   

2.
In silicon heterojunction solar cells, a thin intrinsic amorphous-silicon (a-Si:H) buffer layer between a doped emitter and a c-Si wafer is essential to minimize carrier recombination. This study examines the effect of H2 dilution on the properties of the intrinsic a-Si:H layers deposited on Si wafers by plasma-enhanced chemical vapor deposition. A H2/SiH4 ratio of 24 led to improvements in the quality of intrinsic a-Si:H films and in the performance of passivation compared to a-Si:H film without H2 dilution. A high H2-dilution ratio, however, degraded the passivation of the a-Si:H film. The Si heterojunction solar cells with an optimal intrinsic a-Si:H layer showed an efficiency of 12.3%.  相似文献   

3.
This paper considers texturing of ZnO:Ga (GZO) films used as back contacts in amorphous silicon (a-Si) thin film solar cells. GZO thin films are first prepared by conventional methods. The as-deposited GZO surface properties are modified so that their use as back contacts on a-Si solar cells is enhanced. Texturing is performed by simple dry plasma etching in a CVD process chamber,at power=100 W, substrate temperature=190 °C (temperature is held at 190 °C because thin film solar cells are damaged above 200 °C), pressure=400 Pa and process gas H2 flow=700 sccm. Conventional a-Si solar cells are fabricated with and without GZO back contact surface treatment. Comparison of the with/without texturing GZO films shows that plasma etching increases optical scattering reflectance and reflection haze. SEM and TEM are used to evaluate the morphological treatment-induced changes in the films. Comparison of the a-Si solar cells with/without texturing shows that the plasma treatment increases both the short-circuit current density and fill factor. Consequently, a-Si solar cell efficiency is relatively improved by 4.6%.  相似文献   

4.
We have developed the first precise numerical simulator for thin-film solar cells with two-dimensional structures, such as a submicron textured a-Si solar cell. Conventional simulators for thin-film solar cells were all one-dimensional, which made precise simulation of the behavior of light and carrier transport in the cell impossible. Using the 2D simulator, guidelines for cell design, including textured structures, were obtained. One proposal to increase the conversion efficiency of the textured a-Si single-junction solar cell is to make the texture period longer than the film thickness.  相似文献   

5.
通过AFORS-HET软件模拟了TCO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n)/Ag结构的硅异质结电池中硅衬底电阻率、本征非晶硅薄膜厚度、发射极材料特性以及TCO功函数对电池性能的影响。结果表明:在其它参数不变的条件下,硅衬底电阻率越低,转换效率越高;发射极非晶硅薄膜厚度对短路电流有较大影响,发射极掺杂浓度低于7.0×1019cm-3时,电池各项性能参数都极差;TCO薄膜功函数应大于5.2 eV,以保证载流子的输运收集。  相似文献   

6.
高效非晶硅叠层太阳电池的优化设计   总被引:1,自引:0,他引:1  
研究了高效a-Si/a-Si/a-Si-SiGe三结太阳电池的优化设计。电流匹配是影响二端子叠层太阳电池填充因子的关键因素,在内电极的p/n界面外附加载流子复合是由少数载流子浓度、界面态和p/n界面处材料的几何因素匹配决定的。利用适当的带隙匹配和i层厚度匹配来实现a-Si/a-Si/a-SiGe三结太阳电池结构的最佳化,同时采用改善n/i界面特性的缓冲层技术,获得了Voc=2.48V,Jsc=6.  相似文献   

7.
We have achieved a stabilized conversion efficiency of 8.9% in a single-junction a-Si solar cell and 10.6% in a double-junction a-Si/a-SiGe solar cell for a size of 1 cm2, which are the world's highest values achieved so far for this size and structure. We have been investigating the improvement of stability in a-SiGe film with regard to the bottom cell i-layer, and the control of Eopt in a-SiGe film in order to confirm the tandem cell design. On the other hand, uniformity of ± 1% has been obtained in conversion efficiency for many small cells fabricated in a size of 30 cm × 40 cm, evaluated by using a-Si single-junction structure. As a result, we have achieved the stabilized high-effective area conversion efficiency of 8.64% in a 30 cm × 40 cm a-Si/a-Si tandem submodule. The combination of the above techniques and further optimization can be expected to achieve a stabilized conversion efficiency of more than 10% for a 30 cm × 40 cm double-junction a-Si/a-SiGe submodule.  相似文献   

8.
The main features of a recently developed semi-coherent optical model for a-Si:H thin film solar cells with rough interfaces are presented. In contrast to the previous optical models, the model takes into account also the interference fringes observed in measured wavelength-dependent characteristics of a-Si:H solar cells. The simulations of the quantum efficiencies of the cells with different intrinsic a-Si:H layer thicknesses and interface root mean square (rms) roughness of 40 nm are shown and compared with the measured data.  相似文献   

9.
A new laser photo-etching method has been developed for the formation of microscopic holes on a Through-Hole Contact (THC) integrated-type a-Si solar cell which is expected to obtain high output performance. It was confirmed that the insulator film can be removed without causing damage to the TCO (Transparent Conductive Oxide) film during formation of microscopic holes using a laser photo-etching method. A 6/s% increase in the maximum output power of THC solar cells was obtained by optimizing the hole pattern compared with that of conventional solar cells. Based on this technique, a conversion efficiency of 10.55% for 10 cm x 10 cm THC integrated-type a-Si solar cell submodules was achieved.  相似文献   

10.
TiO2-overcoated SnO2:F transparent conductive oxide films were prepared by atmospheric pressure chemical vapor deposition (APCVD) and an effect of TiO2 layer thickness on a-Si solar cell properties was investigated. The optical properties and the structure of the TiO2 films were evaluated by spectroscopic ellipsometry and X-ray difractometry. a-Si thin film solar cells were fabricated on the SnO2:F films over-coated with TiO2 films of various thicknesses (1.0, 1.5 and 2.0 nm) and IV characteristics of these cells were measured under 1 sun (100 mW/cm2 AM-1.5) illumination. It was found that the TiO2 film deposited by APCVD has a refractive index of 2.4 at 550 nm and anatase crystal structure. The conversion efficiency of the a-Si solar cell fabricated on the 2.0 nm TiO2-overcoated SnO2:F film increased by 3%, which is mainly attributed to an increase in open circuit voltage (Voc) of 30 mV.  相似文献   

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