CdS／CdTe－CdS／Cu_2S异质二重结薄膜太阳电池的设计与计算

根据半导体材料的性能参数，考虑光电压Ｖ和耗尽区宽度Ｗ的变化对光电流ＪＬ的影响，较严格地计算了ＣｄＳ／ＣｄＴｅ和ＣｄＳ／Ｃｕ２Ｓ两种异质结单晶薄膜太阳电池的光伏特性曲线。然后在的条件下，对由上述两种异质结构成的二重结太阳电池的ＣｄＴｅ、Ｃｕ２Ｓ厚度进行匹配，计算各种组合下二重结太阳电池的光伏特性曲线。理论证明最佳匹配厚度Ｈｍａｘ约为９．０６μｍ，最大短路电流、开路电压、转换效率分别为１４．２２ｍＡｃｍ－２、１．３Ｖ和１４、６８％。     

CdS／CdTe—CdS／Cu2S异质二重结薄膜太阳电池的设计与计算

根据半导体材料的性能参数，考虑光电压Ｖ和耗尽区宽度Ｗ的变化对光电流ＪＬ的影响，较严格地计算了ＣｄＳ／ＣｄＴｅ和ＣｄＳ／Ｃｕ２Ｓ两种异质结单晶薄膜太阳电池的光优特性曲线。然后在Ｊ＾ⅠＳＣ＝Ｊ＾ⅡＳＣ的条件下，以由上述两种异质结构成的二重结太阳电池的ＣｄＴｅ，Ｃｕ２Ｓ厚度进行匹配，计算各种组合下二重结太阳电光伏特性曲线。理论证明最佳匹配厚度Ｈｍａｘ约为９．０６μｍ，最大短路电流、开路电压、转移效率分别     

光热对薄膜CdS／Cu2S太阳电池物理参数的影响

研究了光、热和湿气对ＣｄＳ／Ｃｕ２Ｓ电池效率及电池成结、结电容、二极管特性和光谱响应特性的影响。结果表明，对未成结电池光加速成结作用，对成结电池光引起电池性能下降，这种衰降是不可逆过程。     

CdS/CdTe异质结太阳电池串联电阻的理论研究

串联电阻是太阳电池中一个附加的功率损耗．对太阳电池的转换效率、填充因子输出性能等均有较大影响，尽可能的减小串联电阻是提高太阳电池效率和性能所要求的。该文从理论上分析了太阳电池中串联电阻形成的各种因素，特别是对电池TCO层的薄层横向电阻做了较为详尽的理论分析，导出了TCO层薄层横向电阻的理论计算公式，并讨论了减小串联电阻的途径。并将计算值与实验结果进行了比较，两者符合较好。     

CdTe/CdS异质结太阳电池的电特性--关于"CdTe/CdS异质结特性"一文同郭江等商榷

笔者认为郭江等关于“CdTe／CdS异质结特性”一文，对CdTe／CdS太阳电池的CdS／CdTe异质结特性的讨论时存在理论上的错误和设计思想不妥。例如，求解CdTe／CdS异质结空间电荷区电势满足的泊松方程时，所给的边界条件有错，因而所得的电势分布亦有错；关系式△Er=(Eg2-Eg1)-△Ec=0有错；CdTe／CdS异质结能带结构不妥等。据此，我们针对上述CdS／CdTe异质结太阳电池存在的问题进行了理论研究和讨论，所得到的相应研究结果，与郭江等商榷。     

CdTe多晶薄膜太阳电池的结构改进

采用共蒸发法制备了ZnTe：Cu和Cd1-xZnxTe多晶薄膜，研究了薄膜的结构和性能。获得了Cd1-xZnxTe多晶薄膜的光能隙与锌含量的关系，ZnTe：Cu多晶薄膜光能隙随着掺Cu浓度的增加，光能隙减小。分别用ZnTe／ZnTe：Cu和Cd1-xZnxTe／ZnTe：Cu复合层作为背接触层，既能修饰异质结界面，改善电池的能带结构，又能防止cu原子向电池内部扩散。获得了面积0．5cm^2，转换效率为13．38％的CdTe多晶薄膜太阳电池。     

多孔硅在多晶硅太阳电池上的应用

在化学法制作的多孔硅的硅片上制备得到５ｃｍ×５ｃｍ太阳电池，效率为９．６％。对多孔硅进行了萤光光谱及反射率测量，并对多孔硅在太阳电池上的应用进行了讨论。     

CdS/CdTe太阳电池中CdS多晶薄膜的结构和光学性能

采用XRD,AFM,XPS和光学透射谱对化学水浴法制备的CdS多晶薄膜进行了测试分析。刚沉积的CdS多晶薄膜均匀、透明、致密,主要呈现立方结构;Cd和S的原子百分比约为1 10;能隙(Eg)约为2 47eV。在不同温度下后处理会出现六方结构和3CdSO4·8H2O衍射峰,同时晶面择优取向发生了变化。通过沉积高质量的CdS薄膜,获得了效率约13 4%的CdS/CdTe小面积太阳电池。     

A STUDY OF EFFICIENCY LIMITING DEFECTS IN POLYCRYSTALLINE CdTe/CdS SOLAR CELLS

Efficiency limiting mechanisms associated with CdS substrates, CdCl2 treated CdTe films, and Cu/Au contacts were investigated. It was found that heat treatment of CdS in hydrogen ambient prior to CdTe deposition removed the oxygen related defects from the CdS films, but created Cd deficient CdS surface, resulting in an optimum temperature of 450°C. Growth of CdTe films on the CdS under Te-rich conditions enhanced the interdiffusion between CdTe and CdS and reduced the CdTe bandgap to 1.47eV, whereas, growth of CdTe films under Cd-rich conditions retained the CdTe bandgap at 1.5 eV. CdCl2 treatment on CdTe improved the cell performance significantly by virtue of grain growth, reduced leakage current, and change in carrier transport mechanism. However, it also produced defects at Eν + 0.64 and Eν + 0.17 eV due to VCd-Cl complexes. An inverse correlation was found between the density of these defects and V ∞ Finally, a rapid initial degradation was observed in the higher efficiency (10-12%) CdTe cells with Cu/Au contacts but a bromine-methanol etch was found to restore the cell performance.     

THE INFLUENCE OF DEPOSITION AND PROCESSING CONDITIONS ON THE PROPERTIES OF EVAPORATED CdTe/ CdS LAYERS AND SOLAR CELLS

The influence of the deposition and CdCl₂ doping conditions on the properties of CdTe layers and on the performance of CdTe/CdS/ITO/glass solar cells is reported. Relatively high deposition temperatures (300-350°C) were found to enhance the reproducibility of the optical quality of the CdTe. Oxidation of CdTe layers during air annealing was observed and monitored by XRD. Conventional wet dip and CdCl₂ vapour doping of CdTe are compared. Methods for reducing the incidence of pinholes in the CdTe are described, the junction uniformity having been monitored by EBIC. The best solar cell made in this work had an efficiency of 9.87%. (V _oc = 0.696V, J _sc = 24.1 mA/cm², FF = 59%).     

多晶硅太阳电池材料的光致 发光理论和实验研究

报道了多晶硅太阳电池材料的光致发光理论和实验研究结果。给出了多晶硅样品光致发光相对强度的二维扫描记录和晶粒边界附近相对发光强度及相差变化的实验曲线。