Implementation of hybrid fractal metamaterial inspired frequency band reconfigurable multiband antenna for wireless applications

In the present paper authors propose the design and analysis of a hepta band metamaterial inspired octagonal shape antenna using hybrid fractals for wireless applications. Multiband characteristics in the designed antenna is accomplished by introducing of slotted octagonal shape radiating part with hybrid fractal form of Moore curve and Koch curve and two SRR cells. The frequency band reconfigurability is obtained with aid of PIN diodes placed inside the strips connected between Moore curve (fused with centered Koch curve) and feedline. During ON mode of PIN diode antenna operates at seven microwave frequency S‐band WiMAX (3.4~3.69 GHz—IEEE 802.16e)/Lower C‐band terrestrial fixed and mobile broadband application (4.25~4.76 GHz)/C‐band WLAN (5.15~5.35/5.75~5.825 GHz—IEEE 802.11a] (5.4~5.9 GHz)/Lower X‐band Earth exploration‐satellite service ITU region 2 (7.9~8.4 GHz)/Upper X‐band Amateur satellite operating band (10.45~10.50 GHz)/Lower Ku‐band Radar communication application (13.25~13.75 GHz)/Middle Ku‐band Geostationary satellite service (14.2~14.5 GHz) covering various wireless applications. Proposed design exhibit hexa/hepta band features during OFF/ON mode of PIN diode. An acceptable gain, stable radiation characteristics, and good impedance matching are observed at all the resonant frequencies of the proposed structure.     

RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.     

TiO2薄膜敏感特性研究

利用ＭＯＣＶＤ工艺可制备得到锐钛矿型ＴｉＯ２薄膜,在其上溅射金属Ｐｔ并控制工艺流程的温度,Ｐｔ／ＴｉＯ２间将形成良好的金半整流接触。该Ｐｔ／ＴｉＯ２肖特基二极管在常温下表现出良好的气敏特性,响应时间短,对稳定环境中低分压气体浓度的变化反应灵敏。     

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

In this paper, a new design of microstrip power limiter which is based on microstrip technology and zero bias Schottky diode is introduced. In this context, the FR‐4 substrate that was characterized by dielectric permittivity (4.4), dielectric thickness (1.6 mm), and the HSMS 286k Schottky diode is used to design the proposed power limiter. The planar resonators are designed, optimized, and simulated with the shunting of the HSMS 286k diodes by using Schematic solver integrated in ADS from Agilent Technologies. The simulation results are significant in terms of high impedance matching, strong insertion of the low power, and good limitation ratio of the high power. The proposed power limiter is fabricated and tested in the measurement part. It is observed that the results are in agreement with the numerical analysis in terms of matching, isolation, and power limitation. The achieved microwave power limiter offers simple construction, small size (44 × 40 mm²), wide bandwidth, and good limitation ratio less than 10 dBm when the input power reaches 30 dBm.     

A spatial power limiter using a nonlinear frequency selective surface

A novel spatial power limiter based on nonlinear frequency selective surface (FSS) is presented for high power electromagnetic (HPEM) wave protection. Embedded with Schottky diodes, the nonlinear FSS not only reflects out‐of‐band electromagnetic incidence like a filter, but also exhibits a power‐limiting characteristic, allowing low‐loss transmission for an in‐band low‐power incidence while rejecting a high‐power one. Such a FSS with 4 × 4 unit cells is designed, fabricated and measured. Results demonstrate its pass‐band centering at 2.5 GHz, power density threshold of about 0.27 W/m² and shielding effectiveness (SE) up to 20 dB at 2.5 GHz.     

The low temperature polysilicon (LTPS) thin film MOS Schottky diode on glass substrate for low cost and high performance CO sensing applications

The Au/SnO₂/n-LTPS MOS Schottky diode prepared on a glass substrate for carbon monoxide (CO) sensing applications is studied. The n-LTPS (n-type low temperature polysilicon) is prepared by excimer laser annealing and PH₃ plasma treatment of an amorphous Si thin film on glass substrate. The developed Schottky diode exhibits a high relative response ratio of ∼546% to 100 ppm CO ambient under condition of 200 °C and −3 V bias. The response ratio is better than the reported SnO₂ based resistive type CO sensors of 100% and 37%, respectively on poly-alumina and glass substrates or comparable to 390% of Pt-AlGaN/GaN Schottky diode CO sensor. Thus, the Au/SnO₂/n-LTPS Schottky diode has the potential to develop a low cost high performance CO sensor.     

A novel meander line integrated E‐shaped rectenna for energy harvesting applications

In this article, design of a novel meander integrated E‐shaped rectenna is presented. The designed rectenna operates at ISM frequency range from 2.2 to 2.5 GHz with acceptable reflection coefficients, gain and VSWR values. The designed rectenna is simulated using HFSS 15 (High Frequency Electromagnetic Field Simulation) and FR4 epoxy material is used in rectenna design for low cost having dielectric constant of 4.4 and thickness of 1.6 mm. In the rectifying stage full wave voltage doubler circuit is designed for DC power generation with SMS7630 Schottky diode and lumped circuit elements. The impedance matching circuit between the antenna and the rectifier is designed and simulated using advanced design system (ADS) software for efficient power transmission from the antenna to the load. The simulation and measurement results with different load and input power levels prove that the designed and implemented system can be used for low power energy harvesting applications in order to feed electronic components and battery free sensor networks.     

Systematic design of 7‐to‐40‐GHz on‐chip mixer based on optimal impedance deviation coefficient

In this article, a 7‐GHz to 40‐GHz ultra‐wideband passive double‐balanced mixer MMIC using compact wideband Marchand balun (CWMB) is presented. The CWMB is analyzed and designed by introducing a novel optimal impedance deviation coefficient. A trade‐off between the needed bandwidth and the acceptable insertion loss in an ultra‐wideband passive‐doubly‐balanced mixer design can be made through introducing the optimal impedance deviation coefficient. Finally, to verify the proposed methodology, a compact wideband passive double‐balanced mixer monolithic microwave integrated circuit (MMIC) was designed and fabricated using a standard gallium arsenide (GaAs) pHEMT technology according to the process characteristics. Experimental results show that an ultra‐wideband mixer MMIC is realized from 7 GHz to 40 GHz (140% fractional bandwidth) with a measured conversion loss between 9.5 dB~12.5 dB (in‐band fluctuation less than 3 dB) and a LO‐to‐RF isolation larger than 34 dB. The measurement results are in good agreement with the simulation results.     

A low conversion loss single balanced subharmonic mixer

A new circuit topology for the design of a single balanced second‐order subharmonic mixer (SHM) is proposed. In the proposed topology, it is not necessary for the radio frequency (RF) and local oscillator (LO) signal to be within 15% frequency difference. Thus, the limitation of a conventional rat‐race mixer has been alleviated. Moreover, it shows very low conversion loss, high LO‐to‐RF, LO to intermediate frequency (IF), and 2LO‐to‐RF port isolations. The measured minimum down conversion loss is 5.8 dB at 13 GHz and remains below 7.65 dB over the 2 GHz RF operational band 12‐14 GHz for a fixed IF of 550 MHz. Measured LO‐to‐RF and LO‐to‐IF port isolations are better than ?40 dB over the entire operational band. The 2LO‐to‐RF isolation is more than ?62 dB which is extremely necessary for a second harmonic mixer where 2LO and RF frequency are close to each other. The input 1‐dB compression point is measured to be ?1 dBm.     

4H-SiC肖特基结式Alpha效应微型核电池

阐述了一种4H-SiC肖特基结式Alpha效应微型核电池.利用Schottky结取代常用的p-n结,在活度为0.025mCi/cm2的241Am源辐照下进行测试,得到了开路电压Voc为0.25 V、短路电流密度氏为7.64 nA/cm2和输出功率密度Pmax为1.12 nW/cm2.在对4H-SiC肖特基结研制过程中的一些关键工艺进行研究之后,采用XRD法对欧姆接触成分进行了分析,结果表明形成了二元合金相Ni2Si.为了防止界面态密度的提高而导致漏电流增大,肖特基结的设计和加工过程都要严格控制污染源.考虑了所讨论的几个重要影响因素之外,可通过更换大活度放射源、高效地收集方式和提高工艺质量等方式来提高电池的性能.     

Folded down-conversion mixer for a 60 GHz receiver architecture in 65-nm CMOS technology

We present the design of a folded down-conversion mixer which is incorporated at the final down-conversion stage of a 60 GHz receiver. The mixer employs an ac-coupled current reuse transconductance stage. It performs well under low supply voltages, and is less sensitive to temperature variations and process spread. The mixer operates at an input radio frequency （RF） band ranging from 10.25 to 13.75 GHz, with a fixed local oscillator （LO） frequency of 12 GHz, which down-converts the RF band to an intermediate frequency （IF） band ranging from dc to 1.75 GHz. The mixer is designed in a 65 nm low power （LP） CMOS process with an active chip area of only 0.0179 mm^2. At a nominal supply voltage of 1.2 V and an IF of 10 MHz, a maximum voltage conversion gain （VCG） of 9.8 dB, a double sideband noise figure （DSB-NF） of 11.6 dB, and a linearity in terms of input 1 dB compression point （Pin, 1dB） of-13 dBm are measured. The mixer draws a current of 5 mA from a 1.2 V supply dissipating a power of only 6 roW.     

SiC气体传感器

SiC肖特基二极管气体传感器可以广泛应用于检测气体排放物和气体泄露。通过采用PdCr合金 ,可以提高Pd/SiC气体传感器的灵敏度。同时 ,在Pd层和SiC之间引入SnO2 作为界面层也是提高其灵敏度的一种有效途径。进一步的研究表明 ,SnO2 层的大小也对传感器的性能有着重要影响。     

Metasurface based pattern reconfigurable antenna for 2.45 GHz ISM band applications

In this article, a Z‐shaped antenna is designed for 2.45 GHz ISM band applications. The proposed antenna is surrounded by metasurface‐based unit cells. The unit cells are designed to reflect for the proposed frequency. Each of this unit cells are activated with the help of a diode. Unit cell is considered active by switching on the diode of respective unit cell. According to the activation of unit cell the pattern of the antenna will be reconfigured. The 2.45 GHz ISM band pattern reconfigurable microstrip antenna is presented. The radiation pattern of the antenna can be steered toward a desired direction by activating appropriate metasurface unit cell, minimizing the interference and optimizing medium usage. The proposed antenna performance is presented with the help of reflection coefficient and the pattern steerable capability by activating metasurface unit cells. The proposed antenna is having azimuth‐pattern reconfigurable capability around 360°.     

10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process

This article presents the design and test data for a 10W broadband balanced limiter/LNA MMIC fabricated using MSAG MESFET process. The limiter is based on Schottky diodes and the two‐stage LNA is designed using high‐performance MESFETs. The typical measured performance for the limiter/LNA circuit includes gain greater than 14 dB, NF less than 2.7 dB, and return loss better than 20 dB over the 8.5–11.5 GHz frequency range. The CW power handling for the packaged limiter/LNA circuits was greater than 10W. The packaged devices were also exposed to power levels greater than 10W, and no catastrophic failures were observed up to 18W. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 118–127, 2003.     

Development of a low‐cost backscattered semi‐active RFID tag at 2.4 GHz

The development of a low‐cost backscattered semi‐active Radio Frequency Identification (RFID) tag that works in 2.4 GHz frequency band is presented in this study. The tag comprises of an annular ring slot antenna, a feed with a matching network, a Schottky diode modulator and a microcontroller with an in‐built oscillator. The tag is powered by a 3 V pill‐box battery and uses amplitude shift keying (ASK) modulation to communicate its identity to the tag reader. Results presented include the performance of the slot antenna, the feed network, the associated software and identification of the tag in real time by a Hyper‐X® reader. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.     

UWB室内定位系统的射频收发机设计

设计了一种IR-UWB室内定位系统原理样机的射频收发机,发射机将1ns的窄脉冲调制到4GHz,接收机使用隧道二极管检波,检波包络通过比较器判决后将信号传给基带进行处理。所设计的系统通过测试,原理验证样机定位精度优于40cm,达到设计要求。     

Frequency tunable circularly polarized antenna with branch line coupler feed network for wireless applications

In this article, frequency tuning and circularly polarized concentric circular microstrip antenna is investigated. The proposed antenna consist of varactor diode for frequency tuning and branch line coupler (BLC) feed network to achieve the circular polarization (RHCP/LHCP). By changing the varactor diode capacitance between 12.33 pF (0 V) to 1.30 pF (15 V) attain the frequency tuning (2.34‐2.68 GHz). The right hand circular polarization (RHCP) and left hand circular polarizations (LHCP) are realized in the antenna through BLC feed network output ports. The impedance bandwidth (2.05‐3.13 GHz) of BLC feed network is well‐matched with the circular microstrip antenna frequency tunable bandwidth. The proposed antenna is fabricated, and simulated results are verified using the mathematical modeling and experimental verification.     

24GHz高线性低功耗CMOS混频器的设计

采用一种新颖的前馈补偿差分跨导结构和LC-tank折叠共源共栅技术设计了一种适用于汽车防撞雷达系统前端的24 GHz高线性低功耗CMOS下变频混频器,详细分析了Gilbert单元混频器的线性度指标和其优化技术。该混频器工作电压为1.8 V,射频信号为24.0 GHz,中频信号为100 MHz,采用TSMC 0.18μm RF CMOS工艺实现了电路仿真和版图的设计,仿真结果表明:该混频器IIP3可达4 dBm,增益为-9.2 dB,功耗为5.7 mW。     

A multi to wideband frequency reconfigurable antenna

A frequency reconfigurable antenna with a simple design structure and biasing circuit is presented. The antenna is able to configure its frequencies to operate either in multiband or wideband modes. The antenna is fed by a coplanar waveguide transmission line. The reconfiguration characteristics of the antenna is achieved by using PIN diode switches. The operating frequencies of the multiband mode are designed within the wideband mode operating range, from 2 to 6 GHz. Both simulated and measured results of S₁₁, radiation pattern and realized gains are verified. The antenna allows a degree of freedom in providing the frequency reconfiguration from multiband to wideband mode and vice versa.     

Design and realization of an ultra‐low power sensing RF energy harvesting module with its RF and DC sub‐components

Herein, design, development, and analysis of ultra‐low power sensing energy harvesting modules and their subcomponents for ISM band applications have been studied with a holistic approach in an effort to achieve a feasible and high efficient RF energy harvesting performance. The complete harvester system designed and developed here consists of a zero‐bias RF energy rectifying antenna (rectenna), DC boost converters and energy storage super‐capacitors. Compared with the counterpart energy sources, the surrounding or transmitted wireless energy has low intensity which requires designs with high efficiency. To achieve a successful harvester performance, rectifier circuits with high sensitivity Schottky diodes and proper impedance matching circuits are designed. Dedicated RF signals at various levels from nanowatts to miliwatts are applied at the input of the rectenna and the measured input power versus the scavenged DC output voltage are tabulated. Furthermore, by connecting the rectifier to a high gain antenna and using a RF signal transmitter, the wireless RF power harvesting performance at 2.4 GHz was tested up to 5 m. The performance of the rectenna is analyzed for both low‐power detection and efficiencies. Impedance matching network is implemented to reduce the reflected input RF power, DC to DC converters are evaluated for their compatibility to the rectifiers, and super‐capacitor behaviors are investigated for their charging and storage capabilities. The measured results indicate that a wide operating power range with an ultra‐low power sensing and conversion performance have been achieved by optimizing the efficiency of the Schottky rectifier as low as ?50 dBm. The system can be used for battery free applications or expanding battery life for ultra‐low power electronics, such as; RFID, LoRa, Bluetooth, ZigBee, and low power remote sensor systems.