铝的结晶复合阳极氧化膜Ⅰ．水合氧化膜存在下的阳极氧化膜的形成

铝箔先与热水反应，再进行阳极氧化，可形成结晶复合阳极氧化膜。介绍这种膜的形成机理以及膜的结构。这种膜适用于制造中、高压铝电解电容器     

铝的结晶复合阳极氧化膜

铝箔先与热水反应，再进行阳极氧化，可形成结晶复合阳极氧化膜。介绍这种膜的形成机理以及膜的结构。这种膜适用于制造中、高压铝电解电容器。     

阳极氧化工艺及成膜机理

铝基板经阳极氧化后形成一层耐磨、耐腐蚀、电绝缘的氧化膜。铝合金成分、微观组织结构、氧化前处理等因素都会对阳极氧化产生影响。本文基于阳极氧化工艺流程,结合工艺参数,探讨了氧化膜的形成和生长过程,进而分析了影响氧化膜性能的深层原因,对生产有一定的参考意义。     

铝的结晶复合阳极氧化膜

在低压铝电解电容器生产中，铝箔常先在高温短时间加热，形成一薄层热氧化膜，再进行阳极氧化，可形成结晶复合氧化膜，使比容增加，形成电量降低，介绍了有关这种膜的形成机理，结构及应用实例。     

铝的结晶复合阳极氧化膜Ⅱ．热氧化膜存在下阳极氧化膜的形成

在低压铝电解电容器生产中，铝箔常先在高温（４５０℃以上）短时间加热，形成一薄层热氧化膜，再进行阳极氧化，可形成结晶复合氧化膜，使比容增加，形成电量降低。介绍了有关这种膜的形成机理、结构及应用实例。     

铝阳极氧化膜及吕电解电容器

本文叙述铝阳极氧化膜的两种主要结构，生长机理及与形成条件的关系。     

氧化铝、氧化钛多孔膜的阳极氧化制备与微结构比较

采用阳极氧化法分别获得了纳米结构的氧化铝多孔膜和氧化钛多孔膜。对多孔膜的微结构、形貌、晶相等进行了检测与分析;系统研究了阳极氧化电压对纳米孔孔径的影响,分析了金属箔片退火、两步阳极氧化对纳米孔有序度和孔径均匀性的影响;对阳极氧化过程中出现的新颖的上下双层和内外双层多孔膜形貌进行了分析和讨论。初步获得了纳米多孔膜的形成机理,阳极氧化铝、氧化钛纳米多孔膜在制备、微结构等方面存在许多共同点。     

形成前处理对提高铝箔比容的影响

阳极氧化膜是电解电容器的工作介质，其质量的优劣直接影响着铝电解电容器的性能。若在形成前将腐蚀箔在７５℃左右的Ａ溶液（〔Ａ〕≈０．２ｍｏｌ／Ｌ）中浸泡约１０ｍｉｎ，然后在５７０℃左右热处理３ｈ，阳极氧化膜的结构与性能将得到改善，铝箔比容可提高２５％～５０％，而形成电能降低３０％～５０％，从而可有效提高形成效率。     

阳极氧化膜形成液中的氯离子检测

通过对阳极氧化膜形成液现有的检测方法分析,针对介电用阳极氧化膜形成中形成液的形成能力无法真实检测的问题,利用纯铝样品作为传感探头,在不同浓度的形成液和含有腐蚀性成分的电解液中,测试样品的电流变化情况,确定了介电用阳极氧化膜形成液中的氯离子检测方法。     

InSb阳极氧化膜组分和形貌分析

利用X射线光电子能谱（XPS）分析了不同氧化条件下InSb阳极氧化膜的组成成分以及各种组分纵向分布;用观察在扫描电子显微镜（SEM）不同氧化条件下InSb阳极氧化膜的微观形貌。研究了InSb阳极氧化膜的化学和结构特性及其对自身电学性能的影响。为提高InSb阳极氧化膜制备工艺水平提供了有效参考。     

Formation and Properties of an Oxide Film on an Si3N4Surface under Thermal Oxidation

The formation mechanism, composition, and properties of an oxide film that grows on an Si₃N₄ mask during the LOCOS process are studied experimentally. The effect of the HF etching of the mask oxide film on the profile of the bird's beak is investigated for different etching conditions.     

Die attach failures related to wafer back metal processing—an AES study

Die attach failures on Cr/Ni/Au back-metallised silicon wafers have been studied under different process conditions. The Auger studies on the failed devices show that the formation of nickel oxide causes poor die attachment even for an Au film thickness of ∼ 500 Å. The failures simulated experimentally revealed that nickel oxide formation depends on the film sintering conditions.     

Specific features of the morphology of titanium oxide films prepared by pulling silicon substrates from a solution

The formation of thin titanium oxide films by pulling substrates from an alcohol solution of titanium tetraisopropoxide has been investigated. It is shown that the deposited titanium oxide layer consists of a continuous film and titanium oxide globules on its surface. It is found that the density and height of the globules depend on the pulling rate from the solution and the relative humidity in the working chamber, while the thickness of the continuous titanium oxide film is relatively constant.     

Improvement of thin-gate oxide integrity using through-silicon-gate nitrogen ion implantation

A simple and manufacturable technique to improve thin-gate oxide integrity using nitrogen implant through a polycrystalline-silicon (poly-Si) gate MOS structure is described. The Auger depth profile of the film, after 1100°C oxidation cycle, shows nitrogen pile-up at both poly-Si and substrate interfaces, similar to the NH3annealed thermal oxide. Interface-state generation and charge to breakdown under high-field/current stress are significantly improved. Fowler-Nordheim tunneling characteristics and measured capacitance reveal a 3-percent increase in the film thickness. Negative bulk charge trapping is similar to that of thermal oxide film. These properties can be attributed to the formation of the nitrogen-rich layers at both film interfaces, rather than the bulk of the film.     

Oxidation Behavior of Molten Tin Doped with Phosphorus

The oxidation process of molten tin in air at 280°C was studied. We found that a trace addition of phosphorus to the tin reduced the surface oxidation greatly by forming a protective film. The total thickness of the oxide film formed on the molten Sn-0.007wt.%P alloy was about 36 nm, which was composed of a layer of 6 nm SnO₂, 10–15 nm (Sn, P)O, and a transition layer. This oxide film was approximately a quarter of the thickness that formed on pure tin. The oxidized surfaces of different tin alloys were studied by scanning electronic microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Much higher segregation of phosphorus was observed on the subsurface of the oxide film, and the concentration of phosphorus in the oxide film was about 500 times greater than that of the bulk concentration. Based on this result, the segregation of phosphorus on the molten surface could result in the formation of a new protective (Sn, P)O film on the subsurface of the molten tin. It is also suggested that the crystal structure of the oxide film should be studied in the future to confirm the mechanism.     

High quality gate insulator film formation on SiC using by microwave-excited high-density plasma

High quality gate insulator film formation on 4H-SiC substrate is demonstrated. The insulator films were formed by the PECVD and radical oxynitridation using microwave-excited high-density plasma with NO gas at low temperature. The oxide fixed charge and the interface trap density can be dramatically reduced by NO gas radical oxynitridation after the oxide film formed by the PECVD compared with by direct oxynitridation on 4H-SiC. SIMS profiles show carbon profile in these fabricated gate insulator films. It is confirmed that the electrical property is improved as the amount of remaining carbon in the insulator film decreases.     

Performance Improvement of Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate by Plasma Oxidation of Polycrystalline Si Surface

The thin-film transistor (TFT) performances were enhanced and stabilized by the plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of an Al₂O₃ gate dielectric film. The authors attribute this improvement to the formation of a high-quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics and is regulated by the plasma oxidation temperature and the gap distance between the electrode and polycrystalline Si surface     

Effective Silicon Oxide Formation on Silica‐on‐Silicon Platforms for Optical Hybrid Integration

This paper describes an effective method for forming silicon oxide on silica‐on‐silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica‐on‐silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma‐enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.