The characteristics of anisotype CdS/CdTe heterojunction

Polycrystalline CdTe and CdS films were prepared by thermal evaporation technique with thicknesses 1.0 μm and 0.1 μm, respectively. The prepared films were deposited at substrate temperature 423 K, then annealed under vacuum at various annealing temperatures. Anisotype CdS/CdTe heterojunction has been prepared. The structure of the films was examined by X-ray diffraction. Hall measurements confirmed the conductivity types for CdTe and CdS to be p- and n-, respectively. Electrical characteristics of the junction (C–V and I–V measurements) showed that the junction was abrupt. Heat treatment (T_a) of the junction caused a decrease in the capacitance with increasing the reverse bias voltage. Also, both zero bias capacitance and built in voltage are decreased with increasing T_a. Carrier concentration around the junction was increased with increasing T_a. Transport mechanism of forward current coincides to tunneling-recombination mechanism; this was confirmed by I–V measurement.     

Studies on the temperature dependence of I–V and C–V characteristics of electron irradiated silicon photo-detectors

The current transport mechanisms of n⁺–p silicon (Si) photo-detectors in different temperature and bias regions before and after irradiation with a dose of 350 kGy has been investigated and presented in this article. Temperature-dependent dark current–voltage (I–V) studies under forward and reverse bias were carried out for this purpose. In the temperature range studied, the dark current contribution in the low bias range is believed to be due to the generation-recombination of minority carriers in the space-charge region. Electron irradiation does not seem to have altered the dark current conduction mechanism. Capacitance–voltage (C–V) at various temperatures was measured to identify the presence of deep levels in the device.     

Electrical and photovoltaic properties of Cr/Si Schottky diodes

The electrical properties of the Cr/p-Si(111) and Cr/n-Si(100) junctions were investigated through capacitance–voltage and current–voltage measurements, performed under dark and light conditions at room temperature. Diode parameters of Cr/Si Schottky diode like ideality factor and barrier height were obtained and variations of them were monitored as a function of temperatures. Also, an attempt to explore the governing current flow mechanism was tried. The reverse biased I–V measurement under illumination exhibited anomalous behavior as well as high photosensitivity. The former was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current were obtained as 370 mV and I_sc = 44.5 μA, respectively.     

Current transport in copper indium gallium diselenide solar cells comparing mesa diodes to the full cell

Mesa diodes were formed on CdS/CIGS/stainless steel solar cells to investigate current transport when edge leakage and spot defects are avoided. Current conduction mechanisms in the device were determined from current–voltage (I–V) and current–voltage–temperature (I–V–T) characteristics. Space charge limited (SCL) current in the mobility regime with an exponential distribution of traps was found in the voltage range of V>0.6 V based on I∝V^m where m>2. In the voltage region of 0.2V<V<0.6V, recombination was the dominant mechanism based on the ideality factor, n, in the equation I=Ae^(qV/nkT), close to 2. For −0.2V<V<0.2V, a combination of tunneling and SCL current in the ballistic regime was suggested because of the weak temperature dependency and approximation to I∝V^1.5. For the reverse bias region where V<−0.2 V, the device exhibited either SCL current in the velocity saturation regime or tunneling based on the unity I–V relation and the weak temperature dependency. A previous report on full size CIGS cells indicated a higher degree of tunneling for V<0.2 V. Thus, the mesa diodes show some difference in mechanism compared to “good” full cells and much difference compared to “poor” full cells.     

Measurement of silicon and GaAs/Ge solar cell device parameters

The device parameters (carrier lifetime, ideality factor), and physical parameters (built-in voltage, doping concentration) of silicon (Si) and gallium arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. Carrier lifetime is calculated from open circuit voltage decay (OCVD). Built-in voltage and doping concentration are derived from the cell capacitance measured at different bias voltages. Ideality factor is derived from the I–V characteristics of solar cell. Carrier lifetime increases while built-in voltage decreases with increase in temperature. Ideality factor of the solar cell decreases with temperature.     

Synthesis of nanostructured Al-doped zinc oxide films on Si for solar cells applications

Al-doped ZnO thin films have been prepared by a novel successive chemical solution deposition technique. The variation in morphological, structural, electrical, and optical properties of nanostructured films with doping concentration is investigated in details. It was demonstrated that rapid photothermal processing (RPP) improves the quality of nanostructured ZnO films according to the enhancement of resonant Raman scattering efficiency, and the suppression of the visible luminescence with the increase of RPP temperature. It was found from the I-V characteristics of ZnO/Si heterojunction that the average short-circuit current density is about 8 mA/cm². For 1%Al-doped ZnO/SiO₂/Si structure, the short-circuit current density is about 28 mA/cm². The improvement shown in the characteristics may be assigned partially to the reduction of the defect density in the nanostructured Al-doped ZnO films after RPP. The correlations between the composition, microstructure of the films and the properties of the solar cell structures are discussed. The successive chemically deposited Al-doped ZnO thin film offers wider applications of low-cost solar cells in heterojunction structures.     

Effect of temperature and electron irradiation on the I–V characteristics of Au/CdTe Schottky diodes

The results of the studies on the effect of temperature and 8 MeV electron irradiation on the current–voltage (I–V) characteristics of the Au/CdTe Schottky diodes are presented in this article. Schottky diodes were prepared by evaporating Au onto n-type CdTe films electrodeposited onto stainless steel substrates. The forward and reverse current–voltage characteristics of these diodes were studied as a function of temperature. The diodes were subjected to 8 MeV electron irradiation at various doses and their effect on the I–V characteristics was studied. Some intrinsic and contact properties such as barrier height, ideality factor, and series resistance were calculated from the I–V characteristics. Diode ideality factor of the junctions were greater than unity. The ideality factor and the series resistance R_s increase with decrease in temperature. The conduction seems to be predominantly due to thermionic emission–diffusion mechanism. The resistance was found to increase with increasing dose. The leakage current, ideality factor and barrier height were found to be unaffected by electron irradiation up to, a dose of about 40 kGy.     

Photoelectric characterization of Cu(In,Ga)S2 solar cells obtained from rapid thermal processing at different temperatures

CuInS₂-based solar cells have a strong potential of achieving high efficiencies due to their ideal band gap of 1.5 eV. A further increase in the efficiency is expected from doping the absorber film with gallium due to enlargement of the band gap (E_g) and correspondingly the open-circuit voltage (V_OC). We investigated Cu(In,Ga)S₂ solar cells obtained from stacked metal layers sputtered from In and (Cu,Ga) targets followed by rapid thermal processing (RTP) in sulfur vapor. Depending on the actual RTP temperature profile, the films might exhibit CuInS₂/CuGaS₂ (top/bottom) segregation, which is rather detrimental for a large V_OC. We found that only precursors sulfurized at sufficiently high temperatures exhibit the desired interdiffusion of the segregated CuInS₂/CuGaS₂ layers resulting in an increased V_OC. Moreover, temperature dependent current-voltage profiling (suns-V_OC-analysis) yielded strong indications for improved current collection and reduced losses for devices with proper interdiffusion of the CuInS₂/CuGaS₂ layers. A more fundamental question is related to the variation and formation of defect states in differently processed absorber films. The studied samples were thus further investigated by means of admittance spectroscopy, which allowed us to confirm the presence of three individual defect states in both absorber configurations. Two defects exhibit activation energies, which remain unchanged upon varying the RTP temperature whereas a third state exhibits significantly increased activation energy in devices showing interdiffusion of CuInS₂/CuGaS₂ layers. According to the characteristic shift of the conduction band edge upon Ga-doping we conclude that the latter defect level corresponds with the minority carriers in the p-type absorbers.     

8 MeV electron irradiation studies on electrical characteristics of Cu(In,Ga)Se2 solar cells

Cu(In,Ga)Se₂ (CIGS) solar cells are gaining considerable interest due to their high optical absorption coefficient and adjustable band gap, which enables them to achieve high conversion efficiency and also present many promising applications in space power systems. In this paper we report the results of the effect of temperature and 8 MeV electron irradiation on the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se₂/Mo polycrystalline thin-film solar cells under forward and reverse bias studied in the temperature range 270-315 K. The solar cells were subjected to 8 MeV electron irradiation from the Microtron accelerator and were exposed to graded doses of electrons up to 75 kGy. I-V characteristics of the cells under dark and AM 1.5 illumination condition were studied before and after the irradiation. Capacitance measurements were also carried out at various frequencies before and after irradiation. In the measured temperature range, the dark current contribution is due to the generation-recombination of the minority carriers in the depletion region. The ideality factor is found to decrease with increase in temperature. It seems that electron irradiation has not altered the dark current conduction mechanism significantly. The effect of electron irradiation on the solar cell parameters such as fill factor (FF), conversion efficiency (η), saturation current (I_o), short circuit current (I_sc), open circuit voltage (V_oc), and ideality factor (n) was studied. They were found to be stable up to 75 kGy of electron dose as only small changes were observed in the solar cell parameters.     

Influence of electrode on electrical conduction of ZincPhthalocyanine (ZnPc) thin films

The electrical conduction properties of ZincPhthalocyanine (ZnPc) thin films have been studied using copper, silver and aluminium electrodes. The sandwich structures were prepared by the thermal evaporation method. The I–V characteristics were investigated to identify the dominant charge transport mechanism in the films. Among all possible mechanisms, it was observed that the data fits well to the SCLC type of conduction in the Al/ZnPc/Al and Schottky type of conduction prevails in the Ag/ZnPc/Ag and Cu/ZnPc/Cu devices. The trap levels and its dependence of structure have been studied and results are discussed. The charge transport phenomenon in the ZnPc films seems to depend highly on the electrode material and temperature. The carrier mobility increases with increasing temperature whereas the density of trapped holes decreases with increasing temperature. The barrier height also decreases with increase in temperature. The influence of the temperature on the electrical parameters such as saturation current density (J_s), barrier height (Φ_b), density of states in the valence band edge N_d (m⁻³), the position of the Fermi level E_F (eV), ionized acceptor atom density N_e (m⁻³), activation energy ΔΦ (eV), mobilities of hole (μ₀) and the concentration of free holes in the valence band (n₀) have been discussed in detail.     

Study of CdS/Cu(In,Ga)Se2 interface by using n values extracted analytically from experimental data

This paper presents that an analytical method based on Lambert W-function can be applied to estimate the value of the diode ideality factor n, of a ZnO/CdS/Cu(In,Ga)Se₂ (CIGS) solar cell by using its dark current-voltage characteristics. The method is tested at different temperatures in the dark and found that the resulting n(T) values are in good agreement with those estimated experimentally from the slopes of the straight-line regions of Log I-V plots. The suggested values of n(T) under illumination are also determined using the exact explicit analytic solutions for the current-voltage relation expressed in terms of Lambert W-functions and experimentally estimated parasitic series and shunt resistances (R_s, R_sh), diode saturation current (I_o), open circuit voltage (V_oc) and short circuit current (I_sc) values at various temperatures. Temperature dependence of the diode ideality factor revealed that after illumination still tunnelling enhanced interface recombination mechanism dominates the current transport with relatively low tunnelling energy as compared to the dark case.     

Photoelectrochemical behavior of chemically deposited CdSe and coupled CdS/CdSe semiconductor films

Photoelectrochemical effects at chemically deposited CdSe thin films (2000 Å) coupled with as-prepared and air annealed (250°C) CdS films have been investigated by monitoring open-circuit voltage (V_oc) and short-circuit current density (I_sc) at varying incident light intensities and for different heat-treatments temperatures. Two consecutive chemical baths were used in the coupled system. Each bath has been optimized in earlier studies for the deposition of highly photosensitive CdS and CdSe thin films. The photoelectrochemical behavior of single and coupled films was investigated in ferricyanide redox couples. The enhanced short-circuit photocurrent of the as-deposited CdS/CdSe system, despite their lower photosensitivity, indicated that charge separation improved in the coupled system. The role of post-deposition thermal treatments in improving the photoelectrochemical cell characteristics and stability of coupled semiconductors was investigated. Excellent I–V properties were obtained for CdSe and CdS₂₅₀/CdSe photoelectrodes annealed at 280°C. For the coupled system: V_oc=960 mV; I_sc=8.6 mA/cm²; fill factor (ff)=0.53 and cell efficiency (η)=4.2%. The linearity of V_oc/ln(I_L) and I_sc/I_L plots supports the Schottky–Mott model for these interfaces. The stability of the coupled photoanode is superior to that of the CdSe only-film for the initial 3 h.     

Linear discharge model,power losses and overall efficiency of the solid oxide fuel cell with thin film samarium doped ceria electrolyte. Part I: Linear discharge model

In this work, a solid oxide fuel cell with 60 μm samarium doped ceria film as the electrolyte is fabricated with a co-pressing technique. The performance of the cell is measured at 600, 650 and 700 °C. The corresponding maximum power outputs are 236, 331 and 401 mW cm^?2, respectively. The measured current–voltage (I–V) curves are straight lines. A linear discharge model is derived based on the Gorelov and Liu modified electromotive force (EMF) equations. The model fits the measured I–V curves with the maximum errors less than 1.5%. The overall activation overpotential of the cell is therefore postulated to be proportional to the polarization current.     

Dependence of the I–V characteristics of amorphous silicon solar cells on illumination intensity and temperature

Current-voltage characteristics of amorphous silicon (a-Si) solar cells are systematically investigated as functions of the illumination intensity and ambient temperature. The principle of superposition of the short-circuit current and the dark current, which is usually assumed for crystalline silicon solar cells, is not applicable to a-Si solar cells. It is shown, that the output current of a-Si solar cells at a given illumination intensity E₂mW/cm²I_E2(V) is expressed by a relatively simple equation, I_E2(V) = I_d(V) + (_{E2/100) × (I100(V) — Id(V))}, when the series resistance of the solar cells is negligible. Here, I_d(V) is the dark current, I₁₀₀(V) is the output current at an illumination of 100 mW/cm², and V is the applied voltage. Empirical formula to describe the dependence of the current-voltage characteristics on the illumination intensity and the temperature are presented and discussed.     

Effect of Au,Ag and Cu thin films' thickness on the electrical parameters of metal-porous silicon direct hydrogen fuel cell

The effect of the thickness of the gold, silver and cupper films on the electrical properties such as open circuit voltage (V_oc) and short circuit current (I_sc), in the direct hydrogen fuel cell, which uses water as a source of hydrogen, is studied by fabricating Metal/Porous Silicon/n-Silicon/Indium structures. The Porous Silicon (PS) layer on n-type (111) oriented silicon wafers were prepared by anodization. The thin films of Au or Ag or Cu with different thicknesses between 120 and 600 nm were deposited onto the PS surface by the electron-beam technique. The obtained results indicated that V_oc and I_sc, strongly depend on the Au, Ag and Cu layer thicknesses. The Au/PS/n-Si structure generated highest V_oc and I_sc values for all thicknesses of Au film. The best values of V_oc and I_sc were obtained at 325 nm as 0.89 V and 0.021 mA for Au, at 350 nm as 0.75 V and 0.017 mA for Ag, at 350 nm as 0.50 V and 0.010 mA, respectively.     

Properties of an n-C:P/p-Si carbon-based photovoltaic cell grown by radio frequency plasma-enhanced chemical vapor deposition at room temperature

The phosphorus-doped amorphous carbon (n-C:P) films were grown by radiofrequency (RF) power-assisted plasma-enhanced chemical vapor deposition (PECVD) at room temperature using a solid phosphorus target. The influence of phosphorus doping on the material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, solar cell properties such as series resistance, short-circuit current density, open-circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cells by standard measurement technique. The cells’ performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum open-circuit voltage (V_oc) and short-circuit current density (J_sc) for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively, for the n-C:P/p-Si cell grown at a lower RF power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Temperature dependence of Cu2ZnSn(SexS1−x)4 monograin solar cells

The temperature dependence of open-circuit voltage (V_oc), short-circuit current (I_sc), fill factor (FF), and relative efficiency of monograin Cu₂ZnSn(Se_xS_1−x)₄ solar cell was measured. The light intensity was varied from 2.2 to 100 mW/cm² and temperatures were in the range of T = 175-300 K. With a light intensity of 100 mW/cm²dV_oc/dT was determined to be −1.91 mV/K and the dominating recombination process at temperatures close to room temperature was found to be related to the recombination in the space-charge region. The solar cell relative efficiency decreases with temperature by 0.013%/K. Our results show that the diode ideality factor n does not show remarkable temperature dependence and slightly increases from n = 1.85 to n = 2.05 in the temperature range between 175 and 300 K.     

Modeling of small wind turbines based on PMSG with diode bridge for sensorless maximum power tracking

The Permanent Magnet Synchronous Generator (PMSG) with diode bridge is frequently used in small Wind Energy Conversion Systems (WECS). This configuration is robust and cheap, and therefore suitable for small WECS. In order to achieve Maximum Power Point Tracking (MPPT) with no mechanical sensors, it is possible to impose the relationship between the DC voltage and the DC current on the optimum operating points. However, this relationship is difficult to calculate theoretically since the whole system is involved. In fact, as there is no model of the whole system in the literature, the optimum curve I_L¹(V_dc) is obtained with experimental tests or simulations. This paper develops an accurate model of the whole WECS, thereby making it possible to relate the electrical variables to the mechanical ones. With this model, it is possible to calculate the optimum curve I_L¹(V_dc) from commonly-known system parameters and to control the system from the DC side. Experimental results validate the theoretical analysis and show that maximum power is extracted for actual wind speed profiles.     

Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere

Cu(In,Ga)(S,Se)₂ thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe₂, CuInSe₂, In₂Se₃ and Ga₂Se₃ compounds and then annealing in H₂S gas atmosphere. The annealing temperature was varied from 400 to 500 °C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se)₂ thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400 °C demonstrated V_oc=535 mV, I_sc=13.3 mA/cm², FF=0.61 and efficiency=4.34% without AR-coating.     

Performance of p-type silicon-oxide windows in amorphous silicon solar cell

a-SiO_x films have been prepared using silane and pure oxygen as reactive gases in plasma CVD system. Diborane was introduced as a doping gas to obtain p-type conduction silicon oxide. Infrared absorption spectra show the incorporation of Si–O stretch mode around 1000 cm⁻¹. The optical bandgap increases with the oxygen to silane gas ratio, while the electrical conductivity decreases. Hydrogenated amorphous silicon solar cells have been fabricated using p-type a-SiO_x with around 1.85 eV optical bandgap and conductivity greater than 10⁻⁷ S/cm. The measured current–voltage characteristics of the solar cells under 100 mW/cm² artificial light are V_oc=0.84 V, J_sc=14.7 mA/cm², FF=0.635 with a conversion efficiency of 7.84%.