MeV能量Si~+引起二次离子发射的研究

利用北京大学2×1.7 MV串列加速器终端的飞行时间(TOF)谱仪,分别用1.5、2.0和3.0MeV三种能量的初级束Si+轰击样品来研究其二次离子发射现象,使用的样品包括石墨、碳纳米管等。结果表明,采用合理的降噪方法后得到了高信噪比和高时间分辨率的二次离子质谱,实现了全质量范围无遗漏记谱。利用H-C12峰刻度之后,计算得出二次离子各成分的最可能构成及产额,碳纳米管样品表面氢质量含量为8.15%。同时,发现MeV能区二次离子产额与Si+阻止本领之间的关系并非简单的正相关。     

离子源及厚靶参数对氘氚反应中子源中子产额的影响

用厚靶氘氚(D-T)反应中子产额的计算方法模拟计算了入射氘离子能量为120 keV时D-T中子源的中子产额。研究了氘离子源产生的束流中单原子氘离子(D+)及双原子氘离子(D2+)比例对中子产额的影响。结果表明,提高D+比例,同时降低D2+比例将有效提高中子产额。另外还研究了不同靶膜材料及组分引起的中子产额变化。表明中子产额与靶膜中氚的含量成正比,与靶膜元素的原子质量成反比。同时分析讨论了离子源品质及靶参数对中子源整体性能的影响,得出离子源束流品质的提高对中子源整体的设计至关重要。最后,模拟计算了靶膜表面有氧化层情况下中子产额的变化,并与实验结果作了对比。在此基础上提出了一种新的靶设计方案,并对其物理可行性进行了研究。     

18F-生产条件和影响因素初探

以TR19型回旋加速器为例，探讨了正电子核素18F的生产条件和影响因素。结果表明，靶18O-H2O的丰度、束流强度、轰击时间是影响18F产额的主要因素，18O-H2O的丰度越高，18F产额越高；质子束流强度为10～35 µA时，18F产额随束流增加而增加；轰击时间为20～60 min时，18F产额随打靶时间增加而增加。此外，离子源和电磁场也应设置在一定的参数内，以提高18F产额，提高工作效率     

关于Cu-Au合金溅射机制的研究

本文报道了用热中子活化法测量Cu-Au合金在80keV Ar~+离子不同剂量轰击下的部分溅射产额比S_Cu/S_Au,并用卢瑟福背散射(RBS)技术分析样品中元素的反冲以及表面层成分的相对变化,从而研究了元素择优溅射对表面层变化所起的作用。     

离子溅射对氚钛靶寿命的影响

应用TRIM程序模拟了离子在氚钛靶上的溅射产额。结果显示,O+、N+、C+和D+2等在氚钛靶上的溅射是导致氚钛靶寿命下降的重要因素。为了减小离子溅射对氚钛靶寿命的影响,束流入射角应小于45°。     

BRISOL钠同位素放射性核束的产生

北京放射性核束装置在线同位素分离器(BRISOL)采用100 MeV、200μA回旋加速器提供的质子束打靶产生中、短寿命放射性核束,在线分析后供物理用户使用,其质量分辨率好于20 000。为开展~(20)Na核的奇异衰变特性研究,研制了氧化镁靶,并采用100 MeV质子束轰击氧化镁靶在线产生了~(20～26)Na~+的钠同位素放射性核束。当质子束流强为8μA时,~(20)Na~+离子束的最大产额为2×10~5 s~(-1),~(21)Na~+离子束的最大产额为4×10~8 s~(-1)。完成了北京放射性核束装置首个放射性核束物理实验,累计供束近200 h。     

BRISOL钠同位素放射性核束的产生

北京放射性核束装置在线同位素分离器（BRISOL）采用100 MeV、200 μA回旋加速器提供的质子束打靶产生中、短寿命放射性核束,在线分析后供物理用户使用,其质量分辨率好于20 000。为开展²⁰Na核的奇异衰变特性研究,研制了氧化镁靶,并采用100 MeV质子束轰击氧化镁靶在线产生了^20～26Na⁺的钠同位素放射性核束。当质子束流强为8 μA时,²⁰Na⁺离子束的最大产额为2×10⁵ s^-1,²¹Na⁺离子束的最大产额为4×10⁸ s^-1。完成了北京放射性核束装置首个放射性核束物理实验,累计供束近200 h。     

NFZ-10工业辐照电子直线加速器束流控制方法

在ＮＦＺ－１０工业辐照电子直线加速器上，分析了以输出束流来负反馈控制轰击型二极电子枪灯丝电压进而稳定输出束流的方法及存在的缺点。提出了新的控制轰击高压的方法，在此加速器上得到了高稳定性和高精度的输出束流。     

BRISOL钾同位素放射性核束的产生

北京放射性核束装置在线同位素分离器（BRISOL）采用一台100 MeV回旋加速器提供的最大200 μA的质子束打靶在线产生放射性核束,其最高质量分辨率好于20 000。2015年,BRISOL装置建成并使用05 μA质子束轰击氧化钙靶产生了37K+、38K+放射性核束,其中38K+的产额为1×106 pps。为了提高氧化钙靶产生钾放射性核束的产额以满足物理用户需求,BRISOL于近期开展了氧化钙靶的在线实验。实验中使用氧化钙靶产生了36～38K+、43K+、45～47K+等多种放射性核束,同时将38K+的最大产额提高到了112×1010 pps。本文详细介绍氧化钙靶的研制及在线实验结果。     

医用回旋加速器生产正电子核素~(18)F条件分析与优化

分析医用回旋加速器正电子核素18F的照射条件和轰击参数对生产的影响,优化生产条件并给出最佳的轰击参数以期获得高效的生产产额。使用Origin 9.0软件绘制核素18F产量随不同质子束流强度和轰击时间的变化趋势曲线,以蒙特卡罗方法建立回旋加速器质子辐照靶室模型,分析不同质子能量、Havar膜和靶水厚度等对核素18F产量的影响,并给出18F生产最佳的束流强度、轰击时间和质子能量等生产参数。回旋加速器运行期间束流应充分聚焦于照射靶室中心位置,最大化的利用束流以引发足够多的核反应;根据质子束流的能量选择合适的Havar膜和靶水厚度,20 Me V质子束流轰击生产正电子核素18F的靶室系统使用Havar膜总计厚度60μm,靶水厚度3 mm,可获得最佳18F产量。总体而言,18F的产量随束流强度而增大,轰击时间越长18F产量越大,但随着轰击时间的延长增长趋势变缓,轰击时间建议60 min左右。正电子核素18F的生产需要选择合适的Havar膜和靶水厚度(当质子能量为20 Me V时,推荐Havar厚度60μm,靶水厚度3 mm),轰击时间建议60 min左右,开机启动稳定一段时间后再开始照射。     

A comparison of secondary ion mass spectra from keV and MeV ion bombarded vanadium,niobium and copper

Positive secondary ion mass spectra have been measured from stainless steel, copper, niobium, and vanadium targets bombarded by 70 MeV ⁷⁹Br⁷⁺ and 100 keV ⁴⁰Ar⁺ ions using a modified quadrupole residual gas analyzer. Additional spectra have also been measured from the vanadium target for a number of ⁷⁹Br and ⁴⁰Ar projectile energies from 25 keV up to 5 MeV. As has been previously reported [13], under MeV ion bombardment there is an enhancement in the yield of positive ions of electronegative trace constituents relative to the yield of singly charged metal substrate ions. These data suggest that projectiles capable of large inelastic energy deposition may induce secondary ion emission by a mechanism whose contribution to the total ion yield is insignificant or absent when the projectile energy is limited to a few keV. The similarity of these data to recent results in electron- and photon-stimulated desorption is noted.     

Z variations in yields of multicharged ions scattered and recoiled from a silicon surface

The doubly charged and triply charged ion yields from keV ion-silicon surface scattering are found to have a strong dependence on the atomic number Z₁ of the incident ion. For Z₁ < Z₂ the yield of scattered multicharged ions increases with Z₁, so that these ions dominate the recoiling Si²⁺ and Si³⁺ ions by Z₁ = 9. In contrast, when Z₁ > Z₂, there are large yields of Si²⁺ and Si³⁺ ions, and the multicharged scattered ion yields are too small to detect. The interaction radius at which shell vacancies are produced is also found to change, suggesting that electron promotion occurs at a different level crossing on either side of Z₁ = Z₂.     

Chemical enhancement of secondary ion emission from Cd ion bombarded Mo, Ti, Al and Cu surfaces

The variation of secondary ion intensity with target current was found to be linear and parabolic for low and medium current densities, respectively. A semi-empirical formula was proposed earlier to correlate these two effects. With further increase of target current density, it is found that the secondary ion yield varies approximately as cube of the primary current density. This enhanced ion emission has been attributed to the chemical enhancement effect caused by reactive ion bombardment. The semi-empirical formula has accordingly been modified in order to take into consideration the above effect. The combinations Cd⁺-Mo, Cd⁺-Ti, Cd⁺-Al and Cd⁺-Cu have been studied and the results are explained in terms of the modified semi-empirical formula. Our observations have further been supported by ion yield versus bombarding energy studies for the combinations: Cd⁺-Mg, Cd⁺-Ti and Cd⁺-Zr.     

Creep in nickel bombarded with 17 MEV deuterons

Irradiation creep data have been obtained with an apparatus designed to measure the irradiation creep of material subjected to light ion bombardment. The experimental apparatus has the capability to remotely set and control ion flux, stress and temperature for the creep test. Creep data have been obtained from nickel, 152 μm thick, bombarded with 17 MeV D⁺ ions at 473 K. It is shown that this choice of ion energy and specimen thickness results in minimal error induced by the stress gradient effect. Results to date indicate a nonlinear stress dependence of the creep rate with a stress exponent ≈2.5. This result is in substantial agreement with that found by other investigators using light ion irradiations. Results also suggest that in the temperature and stress range being studied, a climb-glide creep mechanism is operative.     

动态离子束混合技术制备氧化铬薄膜的X射线光电子能谱与俄歇电子能谱研究

本文介绍的动态离子束混合技术制备氧化铬薄膜系在不锈钢基体上进行1keV氩离子束溅射沉积铬(同时通入一定量的O),并用100 keV的氩离子束或氧离子束轰击该样品.对两种离子束轰击形成的氧化铬薄膜进行了X射线光电子能谱(X-ray photoelectron spectroscopy,XPS)和俄歇电子能谱(Auger electron spectroscopy,AES)的分析研究.发现Ar 离子束制备的氧化铬薄膜主要是Cr2O3化合物,而O 离子束制备的氧化铬薄膜含有其它价态的铬氧化物.Ar 离子束制备氧化铬薄膜的污染碳少于O 离子束制备.与O 离子束制备相比较,相同能量的Ar 离子束轰击更有利于提高沉积的Cr原子与周围O2的反应性;Ar 离子束制备的氧化铬薄膜过渡层的厚1/3左右,较厚的过渡层显示了制备的薄膜具有较好的附着力.     

Total sputtering yields of solids under MeV-energy Si ion bombardment

Total sputtering yields have been measured for SiO₂ and Cu targets bombarded with Si ions at an incident energy between 500 keV and 5.0 MeV using a quartz crystal microbalance technique. In order to measure total yields accurately, we have developed a beam modulation technique to avoid the effect of thermal drift. In the MeV energy range, an ion penetrates through thin SiO₂ and Cu targets and is implanted into a quartz crystal. Therefore, the thickness of these layers deposited on quartz crystals was carefully controlled to avoid damage of quartz crystal by incident ions. As a result, total sputtering yields of SiO₂ increased with incident Si ion energy, while those of the Cu target decreased. The total yields of the SiO₂ target were represented well by a power low of the electronic stopping power.     

Surface swelling of sapphire induced by MeV and GeV heavy ions

-Al₂O₃ single crystals were bombarded with MeV xenon ions from 10¹⁵ to 10¹⁷ ions cm⁻² and GeV uranium ions from 10¹¹ to 10¹³ ions cm⁻² to study the surface swelling of sapphire at 77 and 300 K due to atomic collision processes (Xe) and electronic energy loss processes in the 20–45 keV/nm regime (U). The induced damage was studied by channeling Rutherford backscattering. Surface swelling was measured with a profilometer. The step height induced by nuclear cascades of MeV xenon increases with the ion fluence and saturates. With GeV uranium, an electronic stopping power threshold for surface swelling was observed and the step height increased with the damage for dE/dx higher than this threshold.     

Study on evolution of gases from fluoropolymer films bombarded with heavy ions

Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield.     

Void formation in solution-treated aisi 316 and 321 stainless steels under 46.5 mev ni6+ irradiation

The swelling and radiation damage structure developed in solution-treated 316 and 321 stainless steels bombarded by 46.5 MeV Ni⁶⁺ ions in the Variable Energy Cyclotron (VEC) have been determined. Foils were pre-injected with 10^?5 a/a He at room temperature and subsequently bombarded by Ni⁶⁺ ions in the temperature range 450–750°C at a damage rate of 1–3 × 10^?3 dpa per second to doses up to 300 dpa and specimens from the foils were examined by transmission electron microscopy. The data obtained were compared with data from other experiments aimed at simulating the fast-neutron irradiation of 316 and 321 steels, in particular previous work with 20 MeV C²⁺ ions and with data on fast-reactor bombarded material. The swelling rates in Ni-ion bombarded specimens were about a factor two less than those in C-ion bombarded specimens and in good agreement with swelling rates in 5 MeV Ni⁺- and neutron-bombarded material. The peak swelling temperature after a dose of 40 dpa was 650°C in 316 steel and 625°C in 321 steel where the swelling was about 5.8% and 4.6% respectively.     

Molecular dynamics and Monte-Carlo simulation of sputtering and mixing by ion irradiation

Molecular dynamics (MD) and Monte-Carlo (MC) simulations of low-energy (<500 eV) Ar ion irradiation on Si substrates were performed in order to investigate the mixing and sputtering effects. Both MD and MC simulation show similar results in sputtering yield, depth profile of projectile and mixing of substrate. For these incident energies, the depth of the mixed region is determined by the implant range of incident ions. For example, when the incident energy is 500 eV, the Ar ions reach a depth of 40 Å so that the Si atoms that reside shallower than 40 Å are fully mixed at an ion dose of about 5.0×10¹⁶ atoms/cm². The resolution of secondary ion mass spectrometry (SIMS) was also studied. It was found that the resolution of SIMS depends on the depth of mixing, which depends in turn on the implant range of the probe ions. This is because the mixing of substrate atoms occurs more frequently than sputtering, so that the information about the depth profile in the mixing region is disturbed.