晶体管、MOS器件

0611539 InGaP/InGaAs双delta掺杂沟道晶体管=InGaP／InGaAs double delta-doped channel transistor[刊,英]／ Hung-Ming Chuang,Shiou-Ying Cheng／／Electronics Letters．-2003,39(13)．-1016-1017(E)     

晶体管、MOS 器件

Y2002-63354-125 0314239使用多偏压 S 参数集的双极晶体管建模=Modelingbipolar transistors using multibias S parameter sets[会,英]/Biondi,T.＆ Palmisano,G.//2001 IEEE Radioand Wireless Conference.—125～128(TE)     

晶体管、MOS 器件

Y2002-63120-305 0217331SPICE 的功率达林顿晶体管的新电热动态宏观模型=A new electrothermal dynamic macromodel of the powerdarlington transistor for SPICE[会,英]/Zarebski,J.//The IEEE International Symposium on Circuits and Sys-tems Vol.3 of 5.—305～308(HE)     

晶体管、MOS器件

Y2000-62422-22 0103672低功率射频应用中部分耗尽与全耗尽绝缘体上硅MOS 场效应晶体管的比较=Comparison between fully-and partially-depleted SOI MOSFET's for low-power ra-dio-frequency application[会.英]/Rozeau,O.& Jo-maah,J.//1999 IEEE International SOI ConferenceProceedings.—22～23(EC)Y2000-62422-24 0103673绝缘体上硅动态阈值电压 MOS(DTMOS)晶体管高频特性=High frequency characterization of SOI dynamic     

晶体管、MOS器件

Y2002-63084-133 021268240Gb/s 通信系统用的 InP 异质结构双极晶体管制造Fabrication of InP heterostructure bipolar transistorsfor 40Gb/s communication systems[会,英]/Abid,Z.//ICM 2000 Proceedings of the Twelfth International Con-ference on Microeleetronics.—133～136(PE)     

晶体管、MOS器件

Y2000-62078-221 0007501具阶梯式栅结构的射频横向双扩散 MOS 场效应晶体管=RF LOMOS FET with graded gate structure[会,英]/Xu,S & Foo,P.D.//1999 International Sympo-sium on Power Semiconductor Devices and IC's.—221～224(U)     

晶体管、MOS器件

0101974X 光二极管阴极灵敏度标定[刊]/黄天暄//强激光与粒子束.—2000,12(4).—455～458(D)在北京正负电子对撞机同步辐射装置3WIB 光束线上标定了一批 X 光二极管的灵敏度。应用一个简单的模型描述真空 X 光二极管光阴极发射光电子的机制。同时,阴极表面粗糙度、氧和碳沾污可以解释金属光阴极的实际灵敏度曲线与模型预测的偏离。参5Y2000-62185-138 0101975采用曲线拟合优化方法确定 HSPICE IGBT 的动态参数=Determination of dynamic parameters for HSPICE     

晶体管、MOS器件

0632198 Experimental analysis of operating characteristics of or ganic semiconductor static induction transistor =有机静电感应三极管动作特性的实验分析[刊,英]／薛严冰／／上海大学学报(英文版)．-2006,10(4)．-352-356(E) 0632199 InGaP／GaAs HBT器件研究中的几个重要问题[刊,中]／林玲／／中国电子科学研究院学报．-2006．1 (3)．-254-257(G) 0632200简易晶体管特性图示仪设计[刊,中]／赵俏玏／／电子工程师．-2006,32(9)．-13-14,42(E) 0632201用于红外探测的非晶硅薄膜晶体管[刊,中]／韩琳／／半导体光电．-2006,27(4)．-393-395,401(G) 0632202高跨导AlGaN／GaN HFET器件研究[刊,中]／张志国／／固体电子学研究与进展．-2006,26(3)．-371-374 (D) 0632203 DC-40GHz光通信系统用GaAs PHEMT驱动放大器[刊,中]／钱峰／／固体电子学研究与进展．-2006,26 (3)．-335-339(D)     

晶体管、MOS器件

Y98-61387-711 9913120高功率逆变器中高功率 IGBTs 和硬驱 GTOs 的比较=Comparison of high power IGBTs and hard driven GTOsfor high power inverters[会,英]/Bernet,S.& Teich-mann,R.//1998 IEEE 13th Applied Power ElectronicsConference,Vol.2.—711～718 (AG)     

晶体管、MOS器件

Y2000-62027-37 0005671珠式凸点应力对缩比 MOS 场效应晶体管器件退化的影响=The influence of Stud bumping Stress on devicedegradation in scaled MOSFETs[会,英]/Shimoyama,N.& Machida,K.//1999 IEEE International Reliabili-ty Physics Symposium.—37～41(UC)     

晶体管、MOS器件

Y2000-62067-44 0009263绝缘体上硅技术,器件与挑战=Silicon on insulatortechnology,devices,and challenges[会,英]/Cristoloveanu,S.//1998 IEEE International Conferenceon Optoelectronic and Microelectronic Materials and De-vices.—44～48(EC)     

晶体管、MOS器件

Y2000-62067-215 0012685微波场效应晶体管直流与交流特性侧墙效应的实验证据=Experimental evidence of side-wall effects on mi-crowave-FET DC and AC performances[会,英]/Chen,H.R.& Huang,G.L.//1998 IEEE InternationalConference on Optoelectronic and Microelectronic Materi-als and Devices.—215～217(EC)     

晶体管、MOS器件

Y2000-62264-359 001440集成门整流晶闸管的性能特征=Performance characterization of integrated gate commutated thyristors[会英]/Gutierrez,M.& Venkataramanan,G.//1999IEEE Industry Applications Meeting,Vol.1.—359～363(PC)Y2000-62264-364 0014404MTO 晶闸管:标准门断开晶闸管的有效替换方案=MTO~(TM) thyristor:an efficient replacement for the stan-     

晶体管、MOS器件

9907350应用 Volterra 级数分析 AIGaAs/GaAs HBT 的三阶互调失真[刊]/廖小平//固体电子学研究与进展.—1998,18(4).—425～430(D)9907351薄膜 SOI 材料 MOSFET 的高温泄漏电流[刊】/冯耀兰//固体电子学研究与进展.—1998,18(4).—415～419(D)     

晶体管、MOS器件

0608838结温与热阻制约大功率LED发展〔刊,中〕/余彬海//发光学报.—2005,26(6).—761-766(E)0608839分子束外延生长AlGaN/GaN高电子迁移率晶体管的陷阱光致电离光谱=Photoionisation spectroscopy oftraps in AlGaN/GaN high electron mibility transistorsgrown by molecular beamepitaxy〔刊,英〕/P.B.Klein,J.A.Mittereder//Electronics Letters.—2003,39(18).—1354-1355(E)0608840蓝宝石衬底上Si Ge/Si n-MODFET结构高电子迁移率=High electron mobility in Si Ge/Si n-MODFET struc-tures onsapphire substrates…     

晶体管、MOS器件

0605788 RF测量中MOSFET偏压相关串联电阻提取=MOS- FET bias dependent series resistance extraction from RF measurements[刊,英]/R．Torres-Torres,R．S．Murphy- Arteaga//Electronics Letters．-2003,39(20)．-1476- 1477(E)     

晶体管、MOS器件

Y2000-62028-1047 0100246新的双 P 阱横向发射极开关晶闸管=A novel doubleP-well lateral emitter wwitched thyristor[会,英]/Qin,Z.X.& Sankara.E.M.//1999 IEEE 49th ElectronicComponents and Technology Conference.—1047～1050(PC)Y2000-62185-32 0100247退化 P-MOSFET 热载流子电荷抽运电流模拟=Simu-lation of charge pumping current in hot-carrier degraded     

晶体管、MOS器件

0603328 铜空气桥低噪声GaAs PHEMT用WNx扩散势垒= Use of WNx as diffusion barrier for copper airbridged low noise GaAs PHEMT[刊,英]／H．C．Changj,E．Y． Chang／／Electronics Letters．-2003,39(24)．-1763-1764(E)     

晶体管、MOS器件

IELDVD060:9322:29630-107 0600442 热激光激励对n型金属氧化物半导体晶体管的作用= Thermal laser stimulation effects on NMOS transistor [会,英]／Firiti,A．／／Physical and Failure Analysis of Integrated Circuits,2004．IPFA 2004．Proceedings of the 11th International Symposium on the．-107-110(A) IELDVD060:9322:29630-209 0600443 关于低温聚合硅薄膜晶体管设备传输线路脉冲Ⅰ-Ⅴ形     

晶体管、MOS器件

Y2002-63306-417 0307166等离子体增强化学汽相沉积形成钝化膜的偏压应力导致 InAlAs/InGaAs/InP HEMTs 隔离退化=Isolationdegradation of InAlAs/InGaAs/InP HEMTs due to biasstress depending on passivation films formed by PCVD[会,英]/Moriguchi,H.& Hoshi,S.//2001 IEEE In-ternational Conference on Indium Phosphide and RelatedMaterials.—417～420(E)