液晶显示原理篇(四)

(接上期) (3)无源矩阵驱动的交叉效应 交叉效应指的是当一个像素上施加电压时,附近未被选中的像素上也有一定电压,当这个电压在Vth附近时,未被选中的像素也会部分呈现显示状态,也就是说,液晶单元像素不能单独实施控制,选通的像素亮了,半选通或没有被选通的像素也亮了,这样将造成对比度严重下降,这就是无源矩阵驱动时所固有的交叉效应,如图14所示的是发生交叉效应时图像的显示情况.     

液晶显示原理篇(四)

(3)无源矩阵驱动的交叉效应交叉效应指的是当一个像素上施加电压时,附近未被选中的像素上也有一定电压,当这个电压在Vth附近时,未被选中的像素也会部分呈现显示状态,也就是说,液晶单元像素不能单独实施控制,选通的像素亮了,半选通或没有被选通的像素也亮了,这样将造成对比度严重下降,这就是无源矩阵驱动时所固有的交叉效应,如图14所示的是发生交叉效应时图像的显示情况。交叉效应产生的实质是由于液晶器件的电光曲线不够陡峭,即陡度不够小,造成了Vs与Vth电压相差较大所致。交叉效应对图像质量特别是对比度的影响非常有害,因此必须想办法减小交叉效应,但不能从根本上消除,只能进行改善。     

用液晶显示控制驱动器实现OLED的矩阵字符显示

本文介绍了用液晶显示控制驱动器实现有机发光二极管（OLED）的矩阵字符显示。通过对液晶显示控制驱动器的输出波形和行输出电路的改进，得到了适合OLED矩阵驱动的电路，实现了无交叉效应的OLED矩阵字符显示。     

终端设备与显示设备

0220085用液晶显示控制驱动器实现 OLED 的矩阵字符显示[刊]/高丽//光电子·激光.—2002,13(2).—129～132(E)本文介绍了用液晶显示控制驱动器实现有机发光二极管(OLED)的矩阵字符显示。通过对液晶显示控制驱动器的输出波形和行输出电路的改进,得到了适合 OLED 矩阵驱动的电路,实现了无交叉效应的OLED 矩阵字符显示。参80220086LCD MGLS12864在高速数据采集系统中的应用[刊]/王林兵//电子工程师.—2002.28(2).—42～43(L)     

有机发光二极管障壁技术的研究

文章论述了有机发光二极管(OLED)的障壁技术.实验证明,采用障壁技术可有效地防止微短路、漏电流和交叉效应,是一种有效的阴极分离措施且可达到高分辨率(几十微米),从而实现高分辨率矩阵显示.     

OLED显示技术的电源供应需求和方案

多种新型显示技术正扩大其市场占有率,这包括新出现的OLED显示器在内,它们拥有超高的对比值、快速的响应时间和宽广的视角.就像其它新技术一样,厂商正利用不同的LED材料(聚合物或小分子)、主动或被动矩阵控制、电流和电压驱动技术以及不同的偏压供应电路来评估和制造不同的解决方案.本文将讨论各种OLED技术和适当的偏压电源供应电路,关于OLED技术和驱动方法的选择,也会影响电源供应电路的需求.工程师所面临的挑战是选择最适当的电源供应电路,以便支持电池供电型可携式装置和特定OLED显示器的需求.     

四川长虹OLED生产线上马

由四川长虹投资控股的具有自主知识产权OLED屏生产线项目破土动工，一期项目总投资7．05亿元，其中四川长虹占总投资额的60％，此举标志着该项目正式进入建设期。根据规划，该OLED屏生产线项目将于明年一季度建成投产，形成年产1200万片OLED显示屏（以1寸计算）的生产能力，产品以PM（被动矩阵）OLED为主。该项目的起步技术来源于四川长虹收购并控股的韩国ORIONOLED公司，韩国ORIONOLED公司早在2000年就开始进行OLED技术研发，四川长虹因此获得了OLED知识产权和核心技术。     

被动驱动有机发光二极管矩阵屏老化性能的研究

对102×64点阵的单色被动驱动的有机电致发光(OLED)矩阵屏进行了老化研究。矩阵屏的结构为ITO/CuPc/NPB/Alq3∶C545/LiF/Al。测量了老化前后矩阵屏的电流-电压-亮度曲线,以及电致发光(EL)和光致发光光谱(PL)。比较发现,老化后的器件在同样恒电流的情况下表现出更高的驱动电压,更小的漏电流,以及在阴极和有机层界面上电致发光和光致发光的光谱强度减弱。矩阵屏在老化17 h后,电致发光和光致发光的强度分别降低到初始值的75.6%和81.4%,分析认为,这是因为老化过程中部分发光材料分解,从而造成对矩阵屏的永久损伤。     

PDLC液晶驱动电路设计

根据矩阵显示屏驱动控制原理,采用偏压法抑制矩阵液晶的交叉效应。同时,针对聚合物分散型液晶PDLC驱动电压较高的特点,设计了耐压较高的晶体管开关电路作为偏压信号的传输门电路。MCU将行扫描信号及字模信号分别送至译码器及移位锁存电路,作为传输门的控制信号,将对应的行列电极信号送至PDLC显示屏,实现信息的显示。     

要闻

2012年全球OLED市场将达31亿美元市场调研公司DisplaySearch报告指出,2007年全球OLED屏的销售额为4.88亿美元,2008年将增长69%,2010年再增53%,达23.02亿美元。主要成长产品为有源矩阵OLED屏,其在2007年销售值仅9300万美元,占整体市场份额的19%,而2012年将猛增到27.19亿美元,上升到整体市场份额的88%。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first