Non‐Volatile ReRAM Devices Based on Self‐Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

2D nanomaterials have been actively utilized in non‐volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D‐stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re‐writable, bistable, transparent, and flexible solution‐processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single‐ or multi‐component‐based multilayers composed of positively charged GO (N‐GO(+) or NS‐GO(+)) with/without negatively charged GO(‐) using layer‐by‐layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi‐component active layer Au/[N‐GO(+)/GO(‐)]_n/Al/PES shows higher ON/OFF ratio of ≈10⁵ with switching voltage of ?1.9 V and higher retention stability (≈10⁴ s), whereas the device based on single component (Au/[N‐GO(+)]_n/Al/PES) shows ≈10³ ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi‐component‐based device are attributed to a higher coating surface roughness. The Au/[N‐GO(+)/GO(–)]_n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈10⁹) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO‐based solutions. It is found that the devices containing MnO₂ in the dielectric layer do not improve the ReRAM performance.     

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution‐Processed Thin Films

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom‐up formation and top‐down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top‐down, or grown from catalyst nanoparticles bottom‐up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution‐processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid‐state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO₃ nanowire networks on smooth Si/SiO₂ and granular fluorine‐doped tin oxide surfaces can be formed by low‐temperature annealing of a Na diffusion species‐containing donor glass to a solution‐processed V₂O₅ thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures.     

Fabrication of Flexible Metal‐Nanoparticle Films Using Graphene Oxide Sheets as Substrates

Graphene‐based sheets that possess a unique nanostructure and a variety of fascinating properties are appealing as promising nanoscale building blocks of new composites. Herein, graphene oxide sheets are used as the nanoscale substrates for the formation of silver‐nanoparticle films. These silver‐nanoparticle films assembled on graphene oxide sheets are flexible and can form stable suspensions in aqueous solutions. They can also be easily processed, forming macroscopic films with high reflectivity. Raman signals of graphene oxide in such hybrid films are increased by the attached silver nanoparticles, displaying surface‐enhanced Raman scattering activity. The degree of enhancement can be adjusted by varying the quantity of silver nanoparticles on the graphene oxide sheets.     

Wafer‐Scale Patterning of Reduced Graphene Oxide Electrodes by Transfer‐and‐Reverse Stamping for High Performance OFETs

A wafer‐scale patterning method for solution‐processed graphene electrodes, named the transfer‐and‐reverse stamping method, is universally applicable for fabricating source/drain electrodes of n‐ and p‐type organic field‐effect transistors with excellent performance. The patterning method begins with transferring a highly uniform reduced graphene oxide thin film, which is pre‐prepared on a glass substrate, onto hydrophobic silanized (rigid/flexible) substrates. Patterns of the as‐prepared reduced graphene oxide films are then formed by modulating the surface energy of the films and selectively delaminating the films using an oxygen‐plasma‐treated elastomeric stamp with patterns. Reduced graphene oxide patterns with various sizes and shapes can be readily formed onto an entire wafer. Also, they can serve as the source/drain electrodes for benchmark n‐ and p‐type organic field‐effect transistors with enhanced performance, compared to those using conventional metal electrodes. These results demonstrate the general utility of this technique. Furthermore, this simple, inexpensive, and scalable electrode‐patterning‐technique leads to assembling organic complementary circuits onto a flexible substrate successfully.     

Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors

Graphene oxide (GO)‐based resistive‐switching (RS) memories offer the promise of low‐temperature solution‐processability and high mechanical flexibility, making them ideally suited for future flexible electronic devices. The RS of GO can be recognized as electric‐field‐induced connection/disconnection of nanoscale reduced graphene oxide (RGO) conducting filaments (CFs). Instead of operating an electrical FORMING process, which generally results in high randomness of RGO CFs due to current overshoot, a TiO₂‐assisted photocatalytic reduction method is used to generate RGO‐domains locally through controlling the UV irradiation time and TiO₂ concentration. The elimination of the FORMING process successfully suppresses the RGO overgrowth and improved RS memory characteristics are achieved in graphene oxide–TiO₂ (Go‐TiO₂) nanocomposites, including reduced SET voltage, improved switching variability, and increased switching speed. Furthermore, the room‐temperature process of this method is compatible with flexible plastic substrates and the memory cells exhibit excellent flexibility. Experimental results evidence that the combined advantages of reducing the oxygen‐migration barrier and enhancing the local‐electric‐field with RGO‐manipulation are responsible for the improved RS behaviors. These results offer valuable insight into the role of RGO‐domains in GO memory devices, and also, this mild photoreduction method can be extended to the development of carbon‐based flexible electronics.     

In Situ Grown Monolayer N‐Doped Graphene on CdS Hollow Spheres with Seamless Contact for Photocatalytic CO2 Reduction

Photocatalytic CO₂ reduction is an effective way to simultaneously mitigate the greenhouse effect and the energy crisis. Herein, CdS hollow spheres, on which monolayer nitrogen‐doped graphene is in situ grown by chemical vapor deposition, are applied for realizing effective photocatalytic CO₂ reduction. The constructed photocatalyst possesses a hollow interior for strengthening light absorption, a thin shell for shortening the electron migration distance, tight adhesion for facilitating separation and transfer of carriers, and a monolayer nitrogen‐doped graphene surface for adsorbing and activating CO₂ molecules. Achieving seamless contact between a photocatalyst and a cocatalyst, which provides a pollution‐free and large‐area transport interface for carriers, is an effective strategy for improving the photocatalytic CO₂ reduction performance. Therefore, the yield of CO and CH₄, as dominating products, can be increased by four and five times than that of pristine CdS hollow spheres, respectively. This work emphasizes the importance of contact interface regulation between the photocatalyst and the cocatalyst and provides new ideas for the seamless and large‐area contact of heterojunctions.