Analysis of charge transfer complex at the interface between organic and inorganic semiconductors

Improving the electrical performance of organic semiconductors is critical to use them for optoelectronic applications. In this study, we analyze the mechanism of charge transfer complex (CTC) formation at the interface between organic and inorganic semiconductors through extensive optical and electrical measurements. N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB) and molybdenum oxide (MoO₃) were sequentially deposited to form a donor/accepter heterojunction structure. The CTC formation and conductivity of the films were determined using UV–visible spectroscopy and transmission line method, respectively. Compared with the single layer devices, the donor/accepter heterojunction exhibits significantly enhanced conductivity. In addition, the conductivity and CTC generation efficiency of the heterojunction display strong dependence on NPB layer thickness, which originates from the variation of dipole interactions at the heterojunction interface. These results provide useful insights on interfacial doping properties, which is potentially beneficial for enhancing the understanding of organic/inorganic interfaces.     

Surface‐Transfer Doping of Organic Semiconductors Using Functionalized Self‐Assembled Monolayers

Controlling charge doping in organic semiconductors represents one of the key challenges in organic electronics that needs to be solved in order to optimize charge transport in organic devices. Charge transfer or charge separation at the molecule/substrate interface can be used to dope the semiconductor (substrate) surface or the active molecular layers close to the interface, and this process is referred to as surface‐transfer doping. By modifying the Au(111) substrate with self‐assembled monolayers (SAMs) of aromatic thiols with strong electron‐withdrawing trifluoromethyl (CF₃) functional groups, significant electron transfer from the active organic layers (copper(II) phthalocyanine; CuPc) to the underlying CF₃‐SAM near the interface is clearly observed by synchrotron photoemission spectroscopy. The electron transfer at the CuPc/CF₃‐SAM interface leads to an electron accumulation layer in CF₃‐SAM and a depletion layer in CuPc, thereby achieving p‐type doping of the CuPc layers close to the interface. In contrast, methyl (CH₃)‐terminated SAMs do not display significant electron transfer behavior at the CuPc/CH₃‐SAM interface, suggesting that these effects can be generalized to other organic‐SAM interfaces. Angular‐dependent near‐edge X‐ray absorption fine structure (NEXAFS) measurements reveal that CuPc molecules adopt a standing‐up configuration on both SAMs, suggesting that interface charge transfer has a negligible effect on the molecular orientation of CuPc on various SAMs.     

Reduction of Tungsten Oxide: A Path Towards Dual Functionality Utilization for Efficient Anode and Cathode Interfacial Layers in Organic Light‐Emitting Diodes

Here, we report on the dual functionality of tungsten oxide for application as an efficient electron and hole injection/transport layer in organic light‐emitting diodes (OLEDs). We demonstrate hybrid polymer light‐emitting diodes (Hy‐PLEDs), based on a polyfluorene copolymer, by inserting a very thin layer of a partially reduced tungsten oxide, WO_2.5, at the polymer/Al cathode interface to serve as an electron injection and transport layer. Significantly improved current densities, luminances, and luminous efficiencies were achieved, primarily as a result of improved electron injection at the interface with Al and transport to the lowest unoccupied molecular orbital (LUMO) of the polymer, with a corresponding lowering of the device driving voltage. Using a combination of optical absorption, ultraviolet spectoscopy, X‐ray photoelectron spectroscopy, and photovoltaic open circuit voltage measurements, we demonstrate that partial reduction of the WO₃ to WO_2.5 results in the appearance of new gap states just below the conduction band edge in the previously forbidden gap. The new gap states are proposed to act as a reservoir of donor electrons for enhanced injection and transport to the polymer LUMO and decrease the effective cathode workfunction. Moreover, when a thin tungsten oxide film in its fully oxidized state (WO₃) is inserted at the ITO anode/polymer interface, further improvement in device characteristics was achieved. Since both fully oxidized and partially reduced tungsten oxide layers can be deposited in the same chamber with well controlled morphology, this work paves the way for the facile fabrication of efficient and stable Hy‐OLEDs with excellent reproducibility.     

Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors

The doping of semiconductors plays a critical role in improving the performance of modern electronic devices by precisely controlling the charge carrier density. However, the absence of a stable doping method for p‐type oxide semiconductors has severely restricted the development of metal oxide‐based transparent p–n junctions and complementary circuits. Here, an efficient and stable doping process for p‐type oxide semiconductors by using molecule charge transfer doping with tetrafluoro‐tetracyanoquinodimethane (F₄TCNQ) is reported. The selections of a suitable dopant and geometry play a crucial role in the charge‐transfer doping effect. The insertion of a F₄TCNQ thin dopant film (2–7 nm) between a Au source‐drain electrode and solution‐processed p‐type copper oxide (Cu_xO) film in bottom‐gate top‐contact thin‐film transistors (TFTs) provides a mobility enhancement of over 20‐fold with the desired threshold voltage adjustment. By combining doped p‐type Cu_xO and n‐type indium gallium zinc oxide TFTs, a solution‐processed transparent complementary metal‐oxide semiconductor inverter is demonstrated with a high gain voltage of 50. This novel p‐doping method is expected to accelerate the development of high‐performance and reliable p‐channel oxide transistors and has the potential for widespread applications.     

Transparent InP Quantum Dot Light‐Emitting Diodes with ZrO2 Electron Transport Layer and Indium Zinc Oxide Top Electrode

Because of outstanding optical properties and non‐vacuum solution processability of colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd‐based QD‐LEDs have shown excellent properties, but the eco‐friendly QD semiconductors have attracted many attentions due to the environmental regulation. And, since there are many issues about the reliability of conventional QD‐LEDs with organic charge transport layers, a stable charge transport layer in various conditions must be developed for this reason. This study proposes the organic/inorganic hybrid QD‐LEDs with Cd‐free InP QDs as light emitting layer and inorganic ZrO₂ nanoparticles as electron transport layer. The QD‐LED with bottom emission structure shows the luminescence of 530 cd m^?2 and the current efficiency of 1 cd/A. To realize the transparent QD‐LED display, the two‐step sputtering process of indium zinc oxide (IZO) top electrode is applied to the devices and this study could fabricate the transparent QD‐LED device with the transmittance of more than 74% for whole device array. And when the IZO top electrode with high work‐function is applied to top transparent anode, the device could maintain the current efficiency within the driving voltage range without well‐known roll‐off phenomenon in QD‐LED devices.     

Exciton‐Charge Annihilation in Organic Semiconductor Films

Time‐resolved optical spectroscopy is used to investigate exciton‐charge annihilation reactions in blended films of organic semiconductors. In donor–acceptor blends where charges are photogenerated via excitons, pulsed optical excitation can deliver a sufficient density of temporally overlapping excitons and charges for them to interact. Transient absorption spectroscopy measurements demonstrate clear signatures of exciton‐charge annihilation reactions at excitation densities of ≈10¹⁸ cm^?3. The strength of exciton‐charge annihilation is consistent with a resonant energy transfer mechanism between fluorescent excitons and resonantly absorbing charges, which is shown to generally be strong in organic semiconductors. The extent of exciton‐charge annihilation is very sensitive not only to fluence but also to blend morphology, becoming notably strong in donor–acceptor blends with nanomorphologies optimized for photovoltaic operation. The results highlight both the value of transient optical spectroscopy to interrogate exciton‐charge annihilation reactions and the need to recognize and account for annihilation reactions in other transient optical investigations of organic semiconductors.     

Hybrid CuTCNQ/AgTCNQ Metal‐Organic Charge Transfer Complexes via Galvanic Replacement vs Corrosion‐Recrystallization

This study reports a hybrid of two metal‐organic semiconductors that are based on organic charge transfer complexes of 7,7,8,8‐tetracyanoquinodimethane (TCNQ). It is shown that the spontaneous reaction between semiconducting microrods of CuTCNQ with Ag⁺ ions leads to the formation of a CuTCNQ/AgTCNQ hybrid, both in aqueous solution and acetonitrile, albeit with completely different reaction mechanisms. In an aqueous environment, the reaction proceeds by a complex galvanic replacement (GR) mechanism, wherein in addition to AgTCNQ nanowires, Ag⁰ nanoparticles and Cu(OH)₂ crystals decorate the surface of CuTCNQ microrods. Conversely, in acetonitrile, a GR mechanism is found to be thermodynamically unfavorable and instead a corrosion‐recrystallization mechanism leads to the decoration of CuTCNQ microrods with AgTCNQ nanoplates, resulting in a pure CuTCNQ/AgTCNQ hybrid metal‐organic charge transfer complex. While hybrids of two different inorganic semiconductors are regularly reported, this report pioneers the formation of a hybrid involving two metal‐organic semiconductors that will expand the scope of TCNQ‐based charge transfer complexes for improved catalysis, sensing, electronics, and biological applications.     

Electronic Structure and Geminate Pair Energetics at Organic–Organic Interfaces: The Case of Pentacene/C60 Heterojunctions

Organic semiconductors are characterized by localized states whose energies are predominantly determined by electrostatic interactions with their immediate molecular environment. As a result, the details of the energy landscape at heterojunctions between different organic semiconductors cannot simply be deduced from those of the individual semiconductors, and they have so far remained largely unexplored. Here, microelectrostatic computations are performed to clarify the nature of the electronic structure and geminate pair energetics at the pentacene/C₆₀ interface, as archetype for an interface between a donor molecule and a fullerene electron acceptor. The size and orientation of the molecular quadrupole moments, determined by material choice, crystal orientation, and thermodynamic growth parameters of the semiconductors, dominate the interface energetics. Not only do quadrupoles produce direct electrostatic interactions with charge carriers, but, in addition, the discontinuity of the quadrupole field at the interface induces permanent interface dipoles. That discontinuity is particularly striking for an interface with C₆₀ molecules, which by virtue of their symmetry possess no quadrupole. Consequently, at a pentacene/C₆₀ interface, both the vacuum‐level shift and geminate pair dissociation critically depend on the orientation of the pentacene π‐system relative to the adjacent C₆₀.     

Hybrid Solar Cells from a Blend of Poly(3‐hexylthiophene) and Ligand‐Capped TiO2 Nanorods

Hybrid bulk heterojunction solar cells based on nanocrystalline TiO₂ (nc‐TiO₂) nanorods capped with trioctylphosphine oxide (TOPO) and regioregular poly(3‐hexylthiophene) (P3HT) are processed from solution and characterized in order to relate the device function (optical absorption, charge separation, and transport and photovoltaic properties) to active‐layer properties and device parameters. Annealing the blend films is found to greatly improve the polymer–metal oxide interaction at the nc‐TiO₂/P3HT interface, resulting in a six‐fold increase of the charge separation yield and improved photovoltaic device performance under simulated solar illumination. In addition, the influence of the organic ligand at the nc‐TiO₂ particle surface is found to be crucial for charge separation. Ligand‐exchange procedures applied on the TOPO‐capped nc‐TiO₂ nanorods with an amphiphilic ruthenium‐based dye are found to further improve the charge‐separation yield at the polymer–nanocrystal interface. However, the poor photocurrents generated in the hybrid blend devices, before and after ligand exchange, suggest that transport within or between nanoparticles limits performance. By comparison with other donor–acceptor bulk heterojunction systems, we conclude that charge transport in the nc‐TiO₂:P3HT blend films is limited by the presence of an intrinsic trap distribution mainly associated with the nc‐TiO₂ particles.     

Trap‐Assisted Recombination via Integer Charge Transfer States in Organic Bulk Heterojunction Photovoltaics

Organic photovoltaics are under intense development and significant focus has been placed on tuning the donor ionization potential and acceptor electron affinity to optimize open circuit voltage. Here, it is shown that for a series of regioregular‐poly(3‐hexylthiophene):fullerene bulk heterojunction (BHJ) organic photovoltaic devices with pinned electrodes, integer charge transfer states present in the dark and created as a consequence of Fermi level equilibrium at BHJ have a profound effect on open circuit voltage. The integer charge transfer state formation causes vacuum level misalignment that yields a roughly constant effective donor ionization potential to acceptor electron affinity energy difference at the donor–acceptor interface, even though there is a large variation in electron affinity for the fullerene series. The large variation in open circuit voltage for the corresponding device series instead is found to be a consequence of trap‐assisted recombination via integer charge transfer states. Based on the results, novel design rules for optimizing open circuit voltage and performance of organic bulk heterojunction solar cells are proposed.     

Photo‐induced Charge Transfer and Relaxation of Persistent Charge Carriers in Polymer/Nanocrystal Composites for Applications in Hybrid Solar Cells

The photo‐induced charge transfer and the dynamics of persistent charge carriers in blends of semiconducting polymers and nanocrystals are investigated. Regioregular poly(3‐hexylthiophene) (P3HT) is used as the electron donor material, while the acceptor moiety is established by CdSe nanocrystals (nc‐CdSe) prepared via colloidal synthesis. As a reference system, organic blends of P3HT and [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM) are studied as well. The light‐induced charge transfer between P3HT and the acceptor materials is studied by photoluminescence (PL), photo‐induced absorption (PIA) and light‐induced electron spin resonance spectroscopy (LESR). Compared to neat P3HT samples, both systems show an intensified formation of polarons in the polymer upon photo‐excitation, pointing out successful separation of photogenerated charge carriers. Additionally, relaxation of the persistent charge carriers is investigated, and significant differences are found between the hybrid composite and the purely organic system. While relaxation, reflected in the transient signal decay of the polaron signal, is fast in the organic system, the hybrid blends exhibit long‐term persistence. The appearance of a second, slow recombination channel indicates the existence of deep trap states in the hybrid system, which leads to the capture of a large fraction of charge carriers. A change of polymer conformation due to the presence of nc‐CdSe is revealed by low temperature LESR measurements and microwave saturation techniques. The impact of the different recombination behavior on the photovoltaic efficiency of both systems is discussed.     

Mechanism for Efficient Photoinduced Charge Separation at Disordered Organic Heterointerfaces

Despite the poor screening of the Coulomb potential in organic semiconductors, excitons can dissociate efficiently into free charges at a donor–acceptor heterojunction, leading to application in organic solar cells. A kinetic Monte Carlo model that explains this high efficiency as a two‐step process is presented. Driven by the band offset between donor and acceptor, one of the carriers first hops across the interface, forming a charge transfer (CT) complex. Since the electron and hole forming the CT complex have typically not relaxed within the disorder‐broadened density of states (DOS), their remaining binding energy can be overcome by further relaxation in the DOS. The model only contains parameters that are determined from independent measurements and predicts dissociation yields in excess of 90% for a prototypical heterojunction. Field, temperature, and band offset dependencies are investigated and found to be in agreement with earlier experiments. Whereas the investigated heterojunctions have substantial energy losses associated with the dissociation process, these results suggest that it is possible to reach high dissociation yields at low energy loss.     

Photovoltaic Function and Exciton/Charge Transfer Dynamics in a Highly Efficient Semiconducting Copolymer

Exciton dissociation is a key step for the light energy conversion to electricity in organic photovoltaic (OPV) devices. Here, excitonic dissociation pathways in the high‐performance, low bandgap “in‐chain donor–acceptor” polymer PTB7 by transient optical absorption (TA) spectroscopy in solutions, neat films, and bulk heterojunction (BHJ) PTB7:PC₇₁BM (phenyl‐C₇₁‐butyric acid methyl ester) films are investigated. The dynamics and energetics of the exciton and intra‐/intermolecular charge separated states are characterized. A distinct, dynamic, spectral red‐shift of the polymer cation is observed in the BHJ films in TA spectra following electron transfer from the polymer to PC₇₁BM, which can be attributed to the time evolution of the hole–electron spatial separation after exciton splitting. Effects of film morphology are also investigated and compared to those of conjugated homopolymers. The enhanced charge separation along the PTB7 alternating donor–acceptor backbone is understood by intramolecular charge separation through polarized, delocalized excitons that lower the exciton binding energy. Consequently, ultrafast charge separation and transport along these polymer backbones reduce carrier recombination in these largely amorphous films. This charge separation mechanism explains why higher degrees of PCBM intercalation within BHJ matrices enhances exciton splitting and charge transport, and thus increase OPV performance. This study proposes new guidelines for OPV materials development.     

Quantum‐Chemical Characterization of the Origin of Dipole Formation at Molecular Organic/Organic Interfaces

Recent experiments have reported a vacuum level shift at the interface between organic materials due to the formation of an interface dipole layer. On the basis of quantum‐chemical calculations, this paper sheds light on the factors contributing to the formation of an interface dipole between an electron donor and an electron acceptor, considering as model system a complex made of tetrathiafulvalene (TTF) as a donor and tetracyanoquinodimethane (TCNQ) as an acceptor. The results indicate that the interface dipole is governed both by charge‐transfer and polarization effects and allow for disentangling of their respective contributions. Two regimes of charge transfer can be distinguished depending on the strength of the electronic coupling: a fractional charge transfer occurs in the strong coupling regime while only integer charges are transferred when the coupling is weak. The polarization contribution can be significant, even in the presence of a pronounced charge transfer between the donor and acceptor molecules. The values of ionization potential and electron affinity of the donor and acceptor molecules may experience shifts as large as several tenths of an eV at the interface with respect to the isolated compounds.     

Ultrafast Electron Transfer in Low‐Band Gap Polymer/PbS Nanocrystalline Blend Films

Ultrafast charge transfer dynamics in hybrid blend films of a low band‐gap polymer poly(2,6‐(N‐(1‐octylnonyl)dithieno[3,2‐b:20,30‐d]pyrrole)‐alt‐4,7‐(2,1,3‐benzothiadiazole)) (PDBT) and PbS quantum dots (QDs) are studied by using ultrafast transient transmission spectroscopy. It is observed that the transient bleaching signal arising from excitons of the PDBT displays a much faster recovery, within the time delay of ≈5 ps, in hybrid films than in the neat PDBT film. In contrast, the bleaching signal resulting from the electron filling of the QDs in hybrid films shows an extra rising component during ≈1–5 ps, which is absent in the pristine QDs. These results indicate the ultrafast electron transfer from the lowest unoccupied molecular orbital energy level of the PDBT to the conduction band of the QDs in the time scale of several ps after laser excitation. A transient absorption signal within 1 ps in the hybrid films is also found, indicating the emergence of charge transfer states (CTs). The CTs formed at the interface of the hybrid blend may facilitate the charge separation and transfer. It is estimated that over 80% of the photoexcited electrons in the PDBT may be transferred into the QDs. The transfer efficiencies show a positive correlation with the power conversion efficiencies of the corresponding hybrid solar cells.     

Charge Generation at Polymer/Metal Oxide Interface: from Molecular Scale Dynamics to Mesoscopic Effects

The correlation between molecular scale morphology and charge generation across hybrid photovoltaic interfaces made of metal oxides (ZnO and TiO₂) and a prototypical electron donor polymer, P3HT, is investigated. Device characterization and UV‐NIR transient absorption spectroscopy are used to demonstrate that the local disorder of the polymer chains on the surface of the metal–oxide film provides better electron injection efficiencies than the crystalline phases, though the latter are essential for energy and charge transport. An unambiguous spectroscopic tool is also demonstrated to probe the occupation of the conduction band of ZnO following the electron injection from the polymer through the ultrafast tracking of the Burstein‐Moss effect.     

2D Organic–Inorganic Hybrid Thin Films for Flexible UV–Visible Photodetectors

Flexible 2D inorganic MoS₂ and organic g‐C₃N₄ hybrid thin film photodetectors with tunable composition and photodetection properties are developed using simple solution processing. The hybrid films fabricated on paper substrate show broadband photodetection suitable for both UV and visible light with good responsivity, detectivity, and reliable and rapid photoswitching characteristics comparable to monolayer devices. This excellent performance is retained even after the films are severely deformed at a bending radius of ≈2 mm for hundreds of cycles. The detailed charge transfer and separation processes at the interface between the 2D materials in the hybrid films are confirmed by femtosecond transient absorption spectroscopy with broadband capability.     

Photomultiplication in Disordered Unipolar Organic Materials

Photomultiplication in conventional inorganic semiconductors has been known and used for decades, the underlying mechanism being multiplication by impact ionization triggered by hot carriers. Since neither carrier heating by an electric field nor avalanche multiplication are possible in strongly disordered organic solids, charge multiplication seems to be highly unlikely in these materials. However, here the photomultiplication observed in the bulk of a unipolar disordered organic semiconductor is reported. The proportion of extracted carriers to incident photons is experimentally determined to be in excess of 3000 % in a single‐layer device of the air‐stable, n‐type organic semiconductor F₁₆CuPc (Pc: phthalocyanine). This effect is explained in terms of exciton quenching by localized charges, the subsequent promotion of these detrapped charges to the high‐mobility energy band of the density‐of‐states (DOS) distribution, and subsequent slow equilibration within this broad intrinsic DOS. Such a mechanism allows multiple replenishment of the optically released charge by mobile carriers injected from an Ohmic electrode. Also shown is photomultiplication in double‐layer devices composed of layers of donor and acceptor small‐molecule materials. This result implies that, apart from exciton dissociation at a donor/acceptor interface, exciton energy transfer to trapped carriers is a complementary photoconductivity process in organic solar cells. This new insight paves the way to cheap, highly efficient organic photodetectors on flexible substrates for numerous applications.     

Solution‐Processed Zinc Oxide as High‐Performance Air‐Stable Electron Injector in Organic Ambipolar Light‐Emitting Field‐Effect Transistors

Electron injection from the source–drain electrodes limits the performance of many n‐type organic field‐effect transistors (OFETs), particularly those based on organic semiconductors with electron affinities less than 3.5 eV. Here, it is shown that modification of gold source–drain electrodes with an overlying solution‐deposited, patterned layer of an n‐type metal oxide such as zinc oxide (ZnO) provides an efficient electron‐injecting contact, which avoids the use of unstable low‐work‐function metals and is compatible with high‐resolution patterning techniques such as photolithography. Ambipolar light‐emitting field‐effect transistors (LEFETs) based on green‐light‐emitting poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole) (F8BT) and blue‐light‐emitting poly(9,9‐dioctylfluorene) (F8) with electron‐injecting gold/ZnO and hole‐injecting gold electrodes show significantly lower electron threshold voltages and several orders of magnitude higher ambipolar currents, and hence light emission intensities, than devices with bare gold electrodes. Moreover, different solution‐deposited metal oxide injection layers are compared. By spin‐coating ZnO from a low‐temperature precursor, processing temperatures could be reduced to 150 °C. Ultraviolet photoemission spectroscopy (UPS) shows that the improvement in transistor performance is due to reduction of the electron injection barrier at the interface between the organic semiconductor and ZnO/Au compared to bare gold electrodes.     

Near‐Infrared Photoresponse of One‐Sided Abrupt MAPbI3/TiO2 Heterojunction through a Tunneling Process

Trap states in semiconductors usually degrade charge separation and collection in photovoltaics due to trap‐mediated nonradiative recombination. Here, it is found that perovskite can be heavily doped in low concentration with non‐ignorable broadband infrared absorption in thick films and their trap states accumulate electrons through infrared excitation and hot carrier cooling. A hybrid one‐sided abrupt perovskite/TiO₂ p‐N heterojunction is demonstrated that enables partial collection of these trap‐filled charges through a tunneling process instead of detrimental recombination. The tunneling is from broadband trap states in the wide depleted p‐type perovskite, across the barrier of the narrow depleted TiO₂ region (<5 nm), to the N‐type TiO₂ electrode. The trap states inject carriers into TiO₂ through tunneling and produce around‐unity peak external quantum efficiency, giving rise to near‐infrared photovoltaics. The near‐infrared response allows photodetecting devices to work in both diode and conductor modes. This work opens a new avenue to explore the near‐infrared application of hybrid perovskites.