基于有源光纤环路的光缓存单元

设计了一个低噪声的EDFA,结合0.8nm的窄带光滤波器,采用长为10439m的标准单模光纤,构成了一个有源光纤环路.对其输出特性进行了详细的测试,测试结果表明该系统具有良好的信号复制能力.基于此设计了一个光缓存单元,描述了其存储原理,定义了其单位缓存时间和最大缓存时间,实验表明该光缓存单元实现了光脉冲信号的缓存,单位缓存时间约为50 μs,复制光脉冲个数在500个以上,相应的最大缓存时间约为25 ms.     

光盘盘基材料应用研究进展

介绍了各类光盘盘基材料的性能特征及其应用情况。并对当前光盘盘基材料的研究进展进行了讨论其中具有优良的光学性能及耐热性能的非晶质环状聚烯烃正在受到重视。     

碳纳米管光学各向异性的解释

碳纳米管对光的吸收与光的偏振方向有关，光偏振方向与碳纳米管管轴方向平行时光吸收最强，光偏振方向与碳纳米管管轴方向垂直时光吸收最弱。采用半经典理论处理光和碳纳米管的相互作用，计算了碳纳米管的光吸收与光偏振方向的关系，计算结果表明碳纳米管光吸收速率与COS^2θ成正比，其中θ是光偏振方向和碳纳米管轴向夹角。     

有机光存储材料及其进展

本文介绍了光盘写入及读出过程的基本原理，并就有机光存储材料性能，作用以及当前的发展趋势进行了讨论。     

光谱域光纤白光干涉测量技术

光谱域光纤白光干涉测量技术(WLI)具有精度高、动态范围大、工程实用性强等优点,在光纤传感和精密测量领域有广泛的应用价值。本文回顾了光谱域光纤白光干涉测量技术的发展历程,重点介绍了本研究组在这一领域所开拓的基于相位测量技术的光谱域光纤WLI,包括傅里叶变换WLI及其相对测量术、波长扫描WLI、相移WLI、波数扫描WLI、互相关WLI、步进相移WLI,并展示了该技术在光纤温度、压力、应变等传感器中的应用。     

国外光纤光纤带和带状光缆技术的最新发展

综合介绍了近年国外关于低衰耗的色散补偿光纤,非零色散位移光纤,用于恶劣环境的碳涂覆和氮化硅涂覆光纤的研究;光纤带制造技术包括光纤带的结构、涂层、性能、生产工艺,大芯数光纤带状光缆包括层绞式松管、中心松管式、骨架式、干缆芯带状光缆的设计制造技术的最新进展。     

无源光网络中突发光功率计校准方法的研究

介绍了一种利用连续光功率计和示波器进行突发光功率计校准的方法,设计制作了稳定度为±0.01dB/15 min的脉冲光源,通过将脉冲功率的直接测量转换为平均功率的间接测量,实现了突发光功率量值的有效溯源。给出了不确定度评定方法,在0.1 dB分辨力条件下测量不确定度达到0.2dB(k=2)。该方法和装置被广泛用于无源光网络突发光功率计的校准,保证了实际工程中突发光功率测量的准确性。     

新型光学纤维材料的研究

介绍了各类新型光学纤维即红外光学纤维、聚合物光学纤维、液芯光学纤维、激光光学纤维及传感光学纤维材料及其研究进展。     

Dispersive optical solitons by the semi-inverse variational principle

In this paper an analytical expression for an optical soliton is obtained with the aid of He's semi-inverse variational principle in the presence of third- and fourth-order dispersion as well as inter-modal dispersion. Three laws of nonlinear media are considered in this paper: the Kerr law, the power law and the log law.     

光电信息技术的某些发展前沿

本文着重如下内容 :1.波长路由在光互连中的应用 :提出适用于环网的光互连接口 (OII)组件和波长路由交换器件 (WRS)的设计 .网络为多层结构 ,第一层为λ1子环网 (RSN) ,第二层为λ2 子环网等 ,层间通过 WRS连接 .2 .微机电系统 (MEMS)可能在下一代通信网络中占重要地位 :随着信息技术的发展 ,使微电子信息处理向系统级芯片技术发展 ,从微型化或性能价格比来看 ,把信息获取、处理和执行集成在一起的微机电系统 (MEMS) ,特别是光机电一体化集成芯片 ,或称为微光机电系统 (OpticalMEMS或 MOEMS)是很合理的 .3.结合光通信中 WDM技术的发展 ,研究了用用一块光栅模板在 Tal-bot干涉仪上刻写多种频率的光纤 Bragg光栅 .     

光敏元件与光传感器的市场动态和发展

介绍了光敏元件与光传感器技术的发展及在国民经济和军事领域中的重要怍用；分析了国内外光电子产业的市场动态与发展趋势；论述了我国光电子产业面临的机遇和挑战。     

Implementation of high speed optical universal logic gates using the electro-optic effect-based Mach–Zehnder interferometer structures

The universal logic gates are the most important logic gates responsible for optimized design of different types of complex digital logic circuits. It is of great interest to implement the function of universal logic gates such as NAND and NOR logic gates using the concepts of electro-optic effect. The smart use of electro-optic effect can provide very effective optical power switching devices. The implementation of universal logic gates operation in the optical domain can improve the performance of the devices and includes the advantages of the optical communication system. The proper configuration of Mach–Zehnder interferometer working on the principle of electro-optic effect can provide the optical responses equivalent to the NAND and NOR logic gates. The proposed devices can be analyzed to check the various performance affecting parameters in order to specify the physical parameters.     

Tunable all-optical switch/demultiplexer using nonlinear MMI waveguides

In this paper, a tunable optical switch/demultiplexer has been presented based on nonlinear multimode interference waveguides. The proposed structure can be utilized as a multi-wavelength optical switch or dynamic wavelength division demultiplexer. This dual application of the structure has been designed based on the cooperation of self-imaging and self-guiding phenomena of multimode waveguides. Simulation results show the mean value of insertion loss equal to ?1.91 dB for the switching application of structure. Also, the wavelengths with 3 nm channel spacing and almost 3 nm full width at half power of outputs can be received in the multiplexing application. Two-dimensional beam propagation method has been utilized in order to simulate and verify the performance of proposed device.     

Bilateral Optical Power Meter Comparison Between NIST and CENAM

We describe the results of a comparison of reference standards between the National Institute of Standards and Technology (NIST-USA) and Centro Nacional De Metrología (CENAM-Mexico). Open beam (free field) and optical-fiber-based measurements at wavelengths of 1302 nm and 1546 nm are reported. Both laboratories’ reference standards were compared by means of a temperature-controlled optical trap detector. Measurements showed a largest difference of less than 3.4 parts in 10³, which is within the combined expanded (k = 2) uncertainty for the laboratories’ reference standards.     

Planar optical waveguides formed in β-BBO by MeV O+ implantation

The planar waveguides have been fabricated in z-cut β-BaB₂O₄ crystal by 2.8 MeV O⁺ ion implantation with the doses of 8 × 10¹⁴ and 2 × 10¹⁵ ions/cm² at room temperature. The waveguides were characterized by the prism-coupling method. The dark modes are measured before and after the annealing at 300°C for 20 and 40 min in air. The refractive index profile is reconstructed using the reflectivity calculation method. It is found that relatively large positive changes of extraordinary refractive indices happen in the guiding regions, and a slight change increases with the doses, which are different from most of the observed ion-implanted waveguides.     

Spectroscopic studies of Cu<Superscript>2+</Superscript> ions in sol-gel derived silica matrix

The Cu²⁺ ion doped silica gel matrices in monolithic shape were prepared by hydrolysis and condensation of tetraethyl orthosilicate (TEOS). The absorption, transmittance and fluorescence spectra of the gel matrices heat treated at different temperatures were monitored. The loss of water and hydroxyl group from silica network changes the optical properties of the Cu²⁺ ions in the host, noted by the change in colour of monolith and spectral characteristics. The pronounced blue shift observed (700–900 nm to 600–850 nm) for the broad band of the absorption spectra of the samples heated up to 700°C is attributed to the ligand field splitting and partial removal of hydroxyl group from the silica matrices. The results indicate broadband filtering effects of the samples in the wavelength region 400–600 nm. Absorption and fluorescence spectra of the glass matrices heated to 1000°C confirms the conversion of Cu²⁺ ion to Cu⁺ ion.     

Planar waveguide photonic crystals as an alternative for refractive index optical sensors design: theoretical evaluation

In this paper, the possibilities of designing refraction index optical sensors in planar waveguide photonic crystals are demonstrated for the first time. Photonic crystals obtained by connecting in cascade planar optical waveguides with high index contrast are analyzed. Photonic band gaps (PBGs) and photonic windows (PWs) were obtained. If a local defect is introduced in the PBG structure, the optical path length is modified and on states can be created in the gap. Besides, the on states wavelengths can be tuned if the optical path of the defect is modified: changing the physical length and/or the refraction index of the defect. In this way, planar waveguide photonic crystals could be used for sensing applications when a specimen modifies the refraction index lattice site. Sensing properties of planar waveguide photonic crystals, with one, two and three sensing channels, are demonstrated.     

Optical Fiber Power Meter Comparison Between NIST and NIM

We describe the results of a comparison of reference standards between the National Institute of Standards and Technology (NIST-USA) and National Institute of Metrology (NIM-China). We report optical fiber-based power measurements at nominal wavelengths of 1310 nm and 1550 nm. We compare the laboratories’ reference standards by means of a commercial optical power meter. Measurement results showed the largest difference of less than 2.6 parts in 10³, which is within the combined standard (k = 1) uncertainty for the laboratories’ reference standards.     

光学高分子材料折光改性研究进展

综述了光学高分子材料折光改性方法的研究进展,分析了影响光学材料折光的因素.叙述了光学高分子材料研究中存在的问题,并对其的研究前景进行了展望.     

2.5Gb/s 0.35μm CMOS单片集成光接收机电路设计与实现

采用0.35μm CMOS工艺设计并实现了单片集成光接收机电路.该芯片能将光电检测器检测到的速率为2.5Gb/s的信号进行放大,进行时钟恢复、数据判决,并通过一到四路分接输出四路速率为622Mb/s的信号.恢复出的经过四分频的时钟抖动以及最后分接输出的四路数据抖动的均方值分别为1.9ps和13ps.芯片在标准的5V电源电压下,功耗为2.05W,整个芯片面积为1600μm×870μm.