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Room‐Temperature Printing of Organic Thin‐Film Transistors with π‐Junction Gold Nanoparticles
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Takeo Minari Yuki Kanehara Chuan Liu Kenji Sakamoto Takeshi Yasuda Asuka Yaguchi Shigemi Tsukada Kei Kashizaki Masayuki Kanehara 《Advanced functional materials》2014,24(31):4886-4892
Printing semiconductor devices under ambient atmospheric conditions is a promising method for the large‐area, low‐cost fabrication of flexible electronic products. However, processes conducted at temperatures greater than 150 °C are typically used for printed electronics, which prevents the use of common flexible substrates because of the distortion caused by heat. The present report describes a method for the room‐temperature printing of electronics, which allows thin‐film electronic devices to be printed at room temperature without the application of heat. The development of π‐junction gold nanoparticles as the electrode material permits the room‐temperature deposition of a conductive metal layer. Room‐temperature patterning methods are also developed for the Au ink electrodes and an active organic semiconductor layer, which enables the fabrication of organic thin‐film transistors through room‐temperature printing. The transistor devices printed at room temperature exhibit average field‐effect mobilities of 7.9 and 2.5 cm2 V?1 s?1 on plastic and paper substrates, respectively. These results suggest that this fabrication method is very promising as a core technology for low‐cost and high‐performance printed electronics. 相似文献
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Flexible Electronics: Transparent Nanopaper‐Based Flexible Organic Thin‐Film Transistor Array (Adv. Funct. Mater. 12/2014)
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Yoshihide Fujisaki Hirotaka Koga Yoshiki Nakajima Mitsuru Nakata Hiroshi Tsuji Toshihiro Yamamoto Taiichiro Kurita Masaya Nogi Naoki Shimidzu 《Advanced functional materials》2014,24(12):1656-1656
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Solution processing, including printing technology, is a promising technique for oxide thin‐film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high composition controllability and high throughput. However, solution‐processed oxide TFTs are limited by low‐performance and stability issues, which require high‐temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution‐processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low‐temperature (<350 °C) solution‐processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n‐type and p‐type oxide‐based channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low‐temperature solution‐processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested. 相似文献
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Ping Feng Weiwei Xu Yi Yang Xiang Wan Yi Shi Qing Wan Jianwen Zhao Zheng Cui 《Advanced functional materials》2017,27(5)
Hardware implementation of artificial synapse/neuron by electronic/ionic hybrid devices is of great interest for brain‐inspired neuromorphic systems. At the same time, printed electronics have received considerable interest in recent years. Here, printed dual‐gate carbon‐nanotube thin‐film transistors with very high saturation field‐effect mobility (≈269 cm2 V?1 s–1) are proposed for artificial synapse application. Some important synaptic behaviors including paired‐pulse facilitation (PPF), and signal filtering characteristics are successfully emulated in such printed artificial synapses. The PPF index can be modulated by spike width and spike interval of presynaptic impulse voltages. The results present a printable approach to fabricate artificial synaptic devices for neuromorphic systems. 相似文献
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Liquid‐Crystalline Semiconductors: Tailoring Morphology and Structure of Inkjet‐Printed Liquid‐Crystalline Semiconductor/Insulating Polymer Blends for High‐Stability Organic Transistors (Adv. Funct. Mater. 18/2016)
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Donghoon Kwak Hyun Ho Choi Boseok Kang Do Hwan Kim Wi Hyoung Lee Kilwon Cho 《Advanced functional materials》2016,26(18):3180-3180
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Printed Electronics: Underlying Mechanism of Inkjet Printing of Uniform Organic Semiconductor Films Through Antisolvent Crystallization (Adv. Funct. Mater. 26/2015)
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Yuki Noda Hiromi Minemawari Hiroyuki Matsui Toshikazu Yamada Shunto Arai Tadashi Kajiya Masao Doi Tatsuo Hasegawa 《Advanced functional materials》2015,25(26):4021-4021
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Y.M. Sun Y.Q. Ma Y.Q. Liu Y.Y. Lin Z.Y. Wang Y. Wang C.A. Di K. Xiao X.M. Chen W.F. Qiu B. Zhang G. Yu W.P. Hu D.B. Zhu 《Advanced functional materials》2006,16(3)
A series of new organic semiconductors for organic thin‐film transistors using dithieno[3,2‐b:2′,3′‐d]thiophene as the core have been synthesized. In work reported by Liu, Zhu, and co‐workers on p. 426, the phenyl‐substituted compound exhibited a high mobility of 0.42 cm2 V–1 s–1 and an on/off ratio of 5 × 106. Weekly shelf‐life tests of the transistors based on the bis(diphenyl)‐substituted thiophene under ambient conditions showed that the mobility was almost unchanged after more than two months, demonstrating potential for applications in future organic electronics. A series of new organic semiconductors for organic thin‐film transistors (OTFTs) using dithieno[3,2‐b:2′,3′‐d]thiophene as the core are synthesized. Their electronic and optical properties are investigated using scanning electron microscopy (SEM), X‐ray diffraction (XRD), UV‐vis and photoluminescence spectroscopies, thermal gravimetric analysis (TGA), and differential scanning calorimetry (DSC). The compounds exhibit an excellent field‐effect performance with a high mobility of 0.42 cm2 V–1 s–1 and an on/off ratio of 5 × 106. XRD patterns reveal these films, grown by vacuum deposition, to be highly crystalline, and SEM reveals well‐interconnected, microcrystalline domains in these films at room temperature. TGA and DSC demonstrate that the phenyl‐substituted compounds possess excellent thermal stability. Furthermore, weekly shelf‐life tests (under ambient conditions) of the OTFTs based on the phenyl‐substituted compounds show that the mobility for the bis(diphenyl)‐substituted thiophene was almost unchanged for more than two months, indicating a high environmental stability. 相似文献
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Transparent Displays: Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays (Adv. Funct. Mater. 34/2016)
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Han Eol Lee Seungjun Kim Jongbeom Ko Hye‐In Yeom Chun‐Won Byun Seung Hyun Lee Daniel J. Joe Tae‐Hong Im Sang‐Hee Ko Park Keon Jae Lee 《Advanced functional materials》2016,26(34):6319-6319
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Mihai Irimia‐Vladu Pavel A. Troshin Melanie Reisinger Lyuba Shmygleva Yasin Kanbur Günther Schwabegger Marius Bodea Reinhard Schwödiauer Alexander Mumyatov Jeffrey W. Fergus Vladimir F. Razumov Helmut Sitter Niyazi Serdar Sariciftci Siegfried Bauer 《Advanced functional materials》2010,20(23):4017-4017
Biocompatible‐ingestible electronic circuits and capsules for medical diagnosis and monitoring are currently based on traditional silicon technology. Organic electronics has huge potential for developing biodegradable, biocompatible, bioresorbable, or even metabolizable products. An ideal pathway for such electronic devices involves fabrication with materials from nature, or materials found in common commodity products. Transistors with an operational voltage as low as 4–5 V, a source drain current of up to 0.5 μA and an on‐off ratio of 3–5 orders of magnitude have been fabricated with such materials. This work comprises steps towards environmentally safe devices in low‐cost, large volume, disposable or throwaway electronic applications, such as in food packaging, plastic bags, and disposable dishware. In addition, there is significant potential to use such electronic items in biomedical implants. 相似文献
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Thin‐Film Transistors: Synthesis of Ultrathin,Homogeneous Copolymer Dielectrics to Control the Threshold Voltage of Organic Thin‐Film Transistors (Adv. Funct. Mater. 36/2016)
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Kwanyong Pak Hyejeong Seong Junhwan Choi Wan Sik Hwang Sung Gap Im 《Advanced functional materials》2016,26(36):6672-6672
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Organic Electronics: Spatial Mapping of Morphology and Electronic Properties of Air‐Printed Pentacene Thin Films (Adv. Funct. Mater. 25/2014)
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Shaurjo Biswas Yongsoo Yang Christian M. Schlepütz Nadav Geva Randall L. Headrick Ron Pindak Roy Clarke Max Shtein 《Advanced functional materials》2014,24(25):3906-3906
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Suk Ho Kim Jongwon Yoon Su Ok Yun Youngkyu Hwang Hun Soo Jang Heung Cho Ko 《Advanced functional materials》2013,23(11):1349-1349
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Yiheng Qin Daniël H. Turkenburg Ionut Barbu Wiljan T. T. Smaal Kris Myny Wan‐Yu Lin Gerwin H. Gelinck Paul Heremans Johan Liu Erwin R. Meinders 《Advanced functional materials》2012,22(6):1209-1214
An upscalable, self‐aligned patterning technique for manufacturing high‐ performance, flexible organic thin‐film transistors is presented. The structures are self‐aligned using a single‐step, multi‐level hot embossing process. In combination with defect‐free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 μm are realized with high reproducibility. Resulting on‐off ratios of 4 × 106 and mobilities as high as 0.5 cm2 V?1 s?1 are achieved, indicating a stable process with potential to large‐area production with even much smaller structures. 相似文献