10 Gbps Optical Signal Transmission via Long‐Range Surface Plasmon Polariton Waveguide

We demonstrate 10 Gbps optical signal transmission via long‐range surface plasmon polaritons (LR‐SPPs) in a very thin metal strip‐guided geometry. The LR‐SPP waveguide was fabricated as a 14 nm thick, 2.5 μm wide, and 4 cm long gold strip embedded in a polymer and pigtailed with single‐mode fibers. The total insertion loss of 16 dB was achieved at a wavelength of 1.55 μm as a carrier wave. In a 10 Gbps optical signal transmission experiment, the LR‐SPP waveguide exhibits an excellent eye opening and a 2.2 dB power penalty at 10^?12 bit error rate. We confirm, for the first time, that LR‐SPPs can efficiently transfer data signals as well as the carrier light.     

Transparent InP Quantum Dot Light‐Emitting Diodes with ZrO2 Electron Transport Layer and Indium Zinc Oxide Top Electrode

Because of outstanding optical properties and non‐vacuum solution processability of colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd‐based QD‐LEDs have shown excellent properties, but the eco‐friendly QD semiconductors have attracted many attentions due to the environmental regulation. And, since there are many issues about the reliability of conventional QD‐LEDs with organic charge transport layers, a stable charge transport layer in various conditions must be developed for this reason. This study proposes the organic/inorganic hybrid QD‐LEDs with Cd‐free InP QDs as light emitting layer and inorganic ZrO₂ nanoparticles as electron transport layer. The QD‐LED with bottom emission structure shows the luminescence of 530 cd m^?2 and the current efficiency of 1 cd/A. To realize the transparent QD‐LED display, the two‐step sputtering process of indium zinc oxide (IZO) top electrode is applied to the devices and this study could fabricate the transparent QD‐LED device with the transmittance of more than 74% for whole device array. And when the IZO top electrode with high work‐function is applied to top transparent anode, the device could maintain the current efficiency within the driving voltage range without well‐known roll‐off phenomenon in QD‐LED devices.     

Highly Transparent and Flexible Organic Light‐Emitting Diodes with Structure Optimized for Anode/Cathode Multilayer Electrodes

In this study, a dielectric layer/metal/dielectric layer (multilayer) electrode is proposed as both anode and cathode for use in the fabrication of transparent and flexible organic light‐emitting diodes (TFOLEDs). The structure of multilayer electrodes is optimized by systematic experiments and optical calculations considering the transmittance and efficiency of the device. The details of the multilayer electrode structure are [ZnS (24 nm)/Ag (7 nm)/MoO₃ (5 nm)] and [ZnS (3 nm)/Cs₂CO₃ (1 nm)/Ag (8 nm)/ZnS (22 nm)], as anode and cathode, respectively. The optimized TFOLED design is fabricated on a polyethylene terephthalate (PET) substrate, and the device shows high transmittance (74.22% around 550 nm) although the PET substrate has lower transmittance than glass. The TFOLEDs operate normally under compressive stress; degradation of electrical characteristics is not observed, comparable to conventional OLEDs with ITO and Al as electrodes. In addition, because the fabricated TFOLEDs show a nearly Lambertian emission pattern and a negligible shift of Commission International de l'Eclairage (CIE) coordination, it is concluded that the fabricated TFOLEDs are suitable for use in displays.     

Non‐Volatile Polymer Electroluminescence Programmable with Ferroelectric Field‐Induced Charge Injection Gate

Electroluminescence (EL) of organic and polymeric fluorescent materials programmable in the luminance is extremely useful as a non‐volatile EL memory with the great potential in the variety of emerging information storage applications for imaging and motion sensors. In this work, a novel non‐volatile EL memory in which arbitrarily chosen EL states are programmed and erased repetitively with long EL retention is demonstrated. The memory is based on utilizing the built‐in electric field arising from the remnant polarization of a ferroelectric polymer which in turn controls the carrier injection of an EL device. A device with vertically stacked components of a transparent bottom electrode/a ferroelectric polymer/a hole injection layer/a light emitting layer/a top electrode successfully emits light upon alternating current (AC) operation. Interestingly, the device exhibits two distinctive non‐volatile EL intensities at constant reading AC voltage, depending upon the programmed direct current (DC) voltage on the ferroelectric layer. DC programmed and AC read EL memories are also realized with different EL colors of red, green and blue. Furthermore, more than four distinguishable EL states are precisely addressed upon the programmed voltage input each of which shows excellent EL retention and multiple cycle endurance of more than 10⁵ s and 10² cycles, respectively.     

A Solution‐Processed UV‐Sensitive Photodiode Produced Using a New Silicon Nanocrystal Ink

This article presents a simple and effective method of functionalizing hydrogen‐terminated silicon (Si) nanocrystals (NCs) to form a high‐quality colloidal Si NC ink with short ligands that allow charge transport in nanocrystal solid films. Si NCs fabricated by laser‐pyrolysis and acid etching are passivated with allyl disulfide via ultraviolet (UV)‐initiated hydrosilylation to form a stable colloidal Si NC ink. Then a Si NC‐based photodiode is directly fabricated in air from this ink. Only a solution‐processed poly(3,4‐ethylenedioxy‐thiophene):poly(styrene sulfonate) (PEDOT: PSS) electron blocking layer and top‐ and bottom‐contacts are needed along with the Si NC layer to construct the device. A Schottky‐junction at the interface between the Si NC absorber layer and aluminum (Al) back electrode drives charge separation in the device under illumination. The unpackaged Si NC‐based photodiode exhibites a peak photoresponse of 0.02 A W^?1 to UV light in air, within an order of magnitude of the response of commercially available gallium phosphide (GaP), gallium nitride (GaN), and silicon carbide (SiC) based photodetectors. This provides a new pathway to large‐area, low‐cost solution‐processed UV photodetectors on flexible substrates and demonstrates the potential of this new silicon nanocrystal ink for broader applications in solution‐processed optoelectronics.     

High efficiency arrays of polymer solar cells fabricated by spray‐coating in air

We present bulk heterojunction organic solar cells fabricated by spray‐casting both the PEDOT:PSS hole‐transport layer (HTL) and active PBDTTT‐EFT:PC₇₁BM layers in air. Devices were fabricated in a (6 × 6) array across a large‐area substrate (25 cm²) with each pixel having an active area of 6.45 mm². We show that the film uniformity and operational homogeneity of the devices are excellent. The champion device with spray cast active layer on spin cast PEDOT:PSS had an power conversion efficiency (PCE) of 8.75%, and the best device with spray cast active layer and PEDOT:PSS had a PCE of 8.06%. The impacts of air and light exposure of the active layer on device performance are investigated and found to be detrimental. Copyright © 2015 John Wiley & Sons, Ltd.     

GaAs converters for high power densities of laser illumination

Photovoltaic power converters can be used to generate electricity directly from laser light. In this paper we report the development of GaAs PV power converters with improved conversion efficiency at high power densities. The incorporation of a lateral conduction layer (LCL) on top of the window layer resulted in a considerable gain in efficiency at high illumination levels. Additional performance improvements were obtained by using a metal electrode grid design and antireflection coating optimised for monochromatic and inhomogeneous laser light. Maximum monochromatic (810 nm) optical‐to‐electrical conversion efficiency of 54·9% at 36·5 W/cm² has been achieved. The characteristics of laser power converters with p/n and n/p polarity are discussed in this paper. Moreover, different materials and doping levels were applied in the LCL. The performance of these different device structures at high laser intensity is presented and discussed. It is shown that the lateral series resistance of the cell has a major impact on the overall device performance. Copyright © 2008 John Wiley & Sons, Ltd.     

Work‐Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light‐Emitting Diodes

Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light‐emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF₃SO₂]₂NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin‐coating process. After TFSA doping, the sheet resistance of the TFSA‐doped five‐layer graphene, with optical transmittance of ≈88%, is as low as ≈90 Ω sq^?1. The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA‐doped graphene anode are 9.6 cd A^?1 and 10.5 lm W^?1, respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.     

Fabrication,Optical Modeling,and Color Characterization of Semitransparent Bulk‐Heterojunction Organic Solar Cells in an Inverted Structure

Semitransparent inverted organic photodiodes are fabricated with a Baytron PH500 ethylene‐glycol layer/silver grid as the top electrode. Reasonable performances are obtained under both rear‐ and front‐side illumination and efficiencies up to 2% are achieved. Some light is shed on visual prospects through optical simulations for a semitransparent device of poly(3‐hexylthiophene) (P3HT) and the C60 derivative 1‐(3‐methoxycarbonyl)propyl‐1‐phenyl[6,6]C₇₁ (PC70BM) in the inverted structure. These calculations allow the maximum efficiency achievable to be predicted for semitransparent cells based on P3HT:PC70BM versus the transparency perception for a human eye. The simulations suggest that low‐bandgap materials such as poly[2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b′]dithiophene)‐alt‐4,7‐(2,1,3‐benzothiadiazole)] (PCPDTBT) have a better potential for semitransparent devices. In addition, the color range recognized by the human eye is predicted by the optical simulation for some semitransparent devices including different active layers.     

Manipulable and Hybridized,Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods

Manipulating stimulated‐emission light in nanophotonic devices on scales smaller than their emission wavelengths to meet the requirements for optoelectronic integrations is a challenging but important step. Surface plasmon polaritons (SPPs) are one of the most promising candidates for sub‐wavelength optical confinement. In this study, based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER), III‐Nitride‐based plasmonic nanolaser with hybrid metal–oxide–semiconductor (MOS) structures is designed. Using geometrically elliptical nanostructures fabricated by nanoimprint lithography, elliptical nanolasers able to demonstrate single‐mode and multimode lasing with an optical pumping power density as low as 0.3 kW cm^?2 at room temperature and a quality Q factor of up to 123 at a wavelength of ≈490 nm are achieved. The ultralow lasing threshold is attributed to the SPP‐coupling‐induced strong electric‐field‐confinement in the elliptical MOS structures. In accordance with the theoretical and experimental results, the size and shape of the nanorod are the keys for manipulating hybridization of the plasmonic and photonic lasing modes in the SPASER. This finding provides innovative insight that will contribute to realizing a new generation of optoelectronic and information devices.     

Cover Picture: White Electroluminescence from a Single‐Polymer System with Simultaneous Two‐Color Emission: Polyfluorene as the Blue Host and a 2,1,3‐Benzothiadiazole Derivative as the Orange Dopant (Adv. Funct. Mater. 7/2006)

New single‐polymer electroluminescent systems containing two individual emission species—polyfluorenes as a blue host and 2,1,3‐benzothiadiazole derivative units as an orange dopant on the main chain—have been designed and synthesized by Wang and co‐workers on p. 957. The resulting single polymers are found to have highly efficient white electroluminescence with simultaneous blue and orange emission from the corresponding emitting species. A single‐layer device has been fabricated that has performance characteristics roughly comparable to those of organic white‐light‐emitting diodes with multilayer device structures. New single‐polymer electroluminescent systems containing two individual emission species—polyfluorenes as a blue host and 2,1,3‐benzothiadiazole derivative units as an orange dopant on the main chain—have been designed and synthesized. The resulting single polymers are found to have highly efficient white electroluminescence with simultaneous blue (λ_max = 421 nm/445 nm) and orange emission (λ_max = 564 nm) from the corresponding emitting species. The influence of the photoluminescence (PL) efficiencies of both the blue and orange species on the electroluminescence (EL) efficiencies of white polymer light‐emitting diodes (PLEDs) based on the single‐polymer systems has been investigated. The introduction of the highly efficient 4,7‐bis(4‐(N‐phenyl‐N‐(4‐methylphenyl)amino)phenyl)‐2,1,3‐benzothiadiazole unit to the main chain of polyfluorene provides significant improvement in EL efficiency. For a single‐layer device fabricated in air (indium tin oxide/poly(3,4‐ethylenedioxythiophene): poly(styrene sulfonic acid/polymer/Ca/Al), pure‐white electroluminescence with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35,0.32), maximum brightness of 12 300 cd m^–2, luminance efficiency of 7.30 cd A^–1, and power efficiency of 3.34 lm W^–1 can be obtained. This device is approximately two times more efficient than that utilizing a single polyfluorene containing 1,8‐naphthalimide moieties, and shows remarkable improvement over the corresponding blend systems in terms of efficiency and color stability. Thermal treatment of the single‐layer device before cathode deposition leads to the further improvement of the device performance, with CIE coordinates of (0.35,0.34), turn‐on voltage of 3.5 V, luminance efficiency of 8.99 cd A^–1, power efficiency of 5.75 lm W^–1, external quantum efficiency of 3.8 %, and maximum brightness of 12 680 cd m^–2. This performance is roughly comparable to that of white organic light‐emitting diodes (WOLEDs) with multilayer device structures and complicated fabrication processes.     

Cover Picture: An Organic Light‐Emitting Diode with Field‐Effect Electron Transport (Adv. Funct. Mater. 1/2008)

The cover shows an organic light‐emitting diode with remote metallic cathode, reported by Sarah Schols and co‐workers on p. 136. The metallic cathode is displaced from the light‐emission zone by one to several micrometers. The injected electrons accumulate at an organic heterojunction and are transported to the light‐emission zone by field‐effect. The achieved charge‐carrier mobility and in combination with reduced optical absorption losses because of the remoteness of the cathode may lead to applications as waveguide OLEDs and possibly a laser structure. (The result was obtained in the EU‐funded project “OLAS” IST‐ FP6‐015034.) We describe an organic light‐emitting diode (OLED) using field‐effect to transport electrons. The device is a hybrid between a diode and a field‐effect transistor. Compared to conventional OLEDs, the metallic cathode is displaced by one to several micrometers from the light‐emitting zone. This micrometer‐sized distance can be bridged by electrons with enhanced field‐effect mobility. The device is fabricated using poly(triarylamine) (PTAA) as the hole‐transport material, tris(8‐hydroxyquinoline) aluminum (Alq₃) doped with 4‐(dicyanomethylene)‐2‐methyl‐6‐(julolindin‐4‐yl‐vinyl)‐4H‐pyran (DCM₂) as the active light‐emitting layer, and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C₁₃H₂₇), as the electron‐transport material. The obtained external quantum efficiencies are as high as for conventional OLEDs comprising the same materials. The quantum efficiencies of the new devices are remarkably independent of the current, up to current densities of more than 10 A cm^–2. In addition, the absence of a metallic cathode covering the light‐emission zone permits top‐emission and could reduce optical absorption losses in waveguide structures. These properties may be useful in the future for the fabrication of solid‐state high‐brightness organic light sources.     

Saturated and Multi‐Colored Electroluminescence from Quantum Dots Based Light Emitting Electrochemical Cells

Novel light emitting electrochemical cells (LECs) are fabricated using CdSe‐CdS (core‐shell) quantum dots (QDs) of tuned size and emission blended with polyvinylcarbazole (PVK) and the ionic liquid 1‐butyl‐3‐methylimidazolium hexafluorophosphate (BMIM‐PF₆). The performances of cells constructed using sequential device layers of indium tin oxide (ITO), poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS), the QD/PVK/IL active layer, and Al are evaluated. Only color saturated electroluminescence from the QDs is observed, without any other emissions from the polymer host or the electrolyte. Blue, green, and red QD‐LECs are prepared. The maximum brightness (≈1000 cd m^‐2) and current efficiency (1.9 cd A^‐1) are comparable to polymer LECs and multilayer QD‐LEDs. White‐light QD‐LECs with Commission Internationale d'Eclairage (CIE) coordinates (0.33, 0.33) are prepared by tuning the mass ratio of R:G:B QDs in the active layer and voltage applied. Transparent QD‐LECs fabricated using transparent silver nanowire (AgNW) composites as the cathode yield an average transmittance greater than 88% over the visible range. Flexible devices are demonstrated by replacing the glass substrates with polyethylene terephthalate (PET).     

Enhancing the Performance of Solid‐State Dye‐Sensitized Solar Cells Using a Mesoporous Interfacial Titania Layer with a Bragg Stack

High efficiency dye‐sensitized solar cells (DSSCs) are fabricated with a heterostructured photoanode that consists of a 500‐nm‐thick organized mesoporous TiO₂ (om‐TiO₂) interfacial layer (IF layer), a 7 or 10‐μm thick nanocrystalline TiO₂ layer (NC layer), and a 2‐μm‐thick mesoporous Bragg stack (meso‐BS layer) as the bottom, middle and top layers, respectively. An om‐TiO₂ layer with a high porosity, transmittance, and interconnectivity is prepared via a sol‐gel process, in which a poly(vinyl chloride)‐g‐poly(oxyethylene methacrylate) (PVC‐g‐POEM) graft copolymer is used as a structure‐directing agent. The meso‐BS layer with large pores is prepared via alternating deposition of om‐TiO₂ and colloidal SiO₂ (col‐SiO₂) layers. Structure and optical properties (refractive index) of the om‐TiO₂ and meso‐BS layers are studied and the morphology of the heterostructured photoanode is characterized. DSSCs fabricated with the heterostructured IF/NC/BS photoanode and combined with a polymerized ionic liquid (PIL) exhibit an energy conversion efficiencies of 6.6% at 100 mW/cm², one of the highest reported for solid‐state DSSCs and much larger than cells prepared with only a IF/NC layer (6.0%) or a NC layer (4.5%). Improvements in energy conversion efficiency are attributed to the combination of improved light harvesting, decreased resistance at the electrode/electrolyte interface, and excellent electrolyte infiltration.     

Flash‐Memory Effect for Polyfluorenes with On‐Chain Iridium(III) Complexes

Polyfluorenes containing Ir(III ) complexes in the main chain are demonstrated to have promising application in a polymer memory device. A flash‐memory device is shown whereby a polymer solution is spin‐coated as the active layer and is sandwiched between an aluminum electrode and an indium tin oxide electrode. This device exhibits very good memory performance, such as low reading, writing, and erasing voltages and a high ON/OFF current ratio of more than 10⁵. Both ON and OFF states are stable under a constant voltage stress of ?1.0 V and survive up to 10⁸ read cycles at a read voltage of ?1.0 V. Charge transfer and traps in polymers are probably responsible for the conductance‐switching behavior and the memory effect. The fluorene moieties act as an electron donor and Ir(III ) complex units as the electron acceptor. Furthermore, through the modification of ligand structures of Ir(III ) complex units, the resulting polymers also exhibit excellent memory behavior. Alteration of ligands can change the threshold voltage of the device. Hence, conjugated polymers containing Ir(III ) complexes, which have been successfully applied in light‐emitting devices, show very promising application in polymer memory devices.     

Simultaneous Improvement of Charge Generation and Extraction in Colloidal Quantum Dot Photovoltaics Through Optical Management

Inverted structure heterojunction colloidal quantum dot (CQD) photovoltaic devices with an improved performance are developed using single‐step coated CQD active layers with a thickness of ≈60 nm. This improved performance is achieved by managing the device architecture to simultaneously enhance charge generation and extraction by raising optical absorption within the depletion region. The devices are composed of an ITO/PEDOT:PSS/PbS‐CQD/ZnO/Al structure, in which the p–n heterojunction is placed at the rear (i.e., opposite to the side of illumination) of the devices (denoted as R‐Cell). Sufficient optical generation is achieved at very low CQD layer thicknesses of 45–60 nm because of the constructive interference caused by the insertion of ZnO between the CQD and the Al electrode. The power conversion efficiency (PCE) of R‐Cells containing a thin CQD layers (≈60 nm) is much higher (≈6%) than that of conventional devices containing CQD layers with a thickness of ≈300 nm (PCE ≈4.5%). This optical management strategy provides a general guide to obtain the optimal trade‐off between generation and extraction in planar p–n junction solar cells. In terms of device engineering, all the layers in our R‐Cells are fabricated using single coating, which can lead to compatibility with high‐throughput processes.     

Highly Flexible Organic Nanofiber Phototransistors Fabricated on a Textile Composite for Wearable Photosensors

Highly flexible organic nanofiber phototransistors are fabricated on a highly flexible poly(ethylene terephthalate) (PET) textile/poly(dimethylsiloxane) (PDMS) composite substrate. Organic nanofibers are obtained by electrospinning, using a mixture of poly(3,3^″′‐didodecylquarterthiophene) (PQT‐12) and poly(ethylene oxide) (PEO) as the semiconducting polymer and processing aid, respectively. PDMS is used as both a buffer layer for flattening the PET textile and a dielectric layer in the bottom‐gate bottom‐contact device configuration. PQT‐12:PEO nanofibers can be well‐aligned on the textile composite substrate by electrospinning onto a rotating drum collector. The nanofiber phototransistors fabricated on the PET/PDMS textile composite substrate show highly stable device performance (on‐current retention up to 82.3 (±6.7)%) under extreme bending conditions, with a bending radius down to 0.75 mm and repeated tests over 1000 cycles, while those prepared on film‐type PET and PDMS‐only substrates exhibit much poorer performances. The photoresponsive behaviors of PQT‐12:PEO nanofiber phototransistors have been investigated under light irradiation with different wavelengths. The maximum photoresponsivity, photocurrent/dark‐current ratio, and external quantum efficiency under blue light illumination were 930 mA W^?1, 2.76, and 246%, respectively. Furthermore, highly flexible 10 × 10 photosensor arrays have been fabricated which are able to detect incident photonic signals with high resolution. The flexible photosensors described herein have high potential for applications as wearable photosensors.     

Solid‐State Photovoltaic Thin Films using TiO2, Organic Dyes,and Layer‐by‐Layer Polyelectrolyte Nanocomposites

We report photovoltaic devices consisting of patterned TiO₂, porphyrin dyes, and layer‐by‐layer (LBL) polyelectrolyte multilayer/oligoethylene glycol dicarboxylic acid (OEGDA) composite films. A composite polyelectrolyte LBL/OEGDA film was fabricated by formation of an alternating multilayer of linear polyethyleneimine (LPEI) and polyacrylic acid (PAA), followed by immersion of the LBL film into an OEGDA aqueous solution. The ionic conductivity attained in this LBL LPEI/PAA and OEGDA composite film was approximately 10^–5 S cm^–1 at room temperature and humidity. Investigations of dye‐sensitized photovoltaic devices constructed with the LBL (LPEI/PAA)/OEGDA composite films, TiO₂, and four types of porphyrin dyes resulted in optimization of the dye molecule and its orientation at the interface with the ionically conductive composite. The photocurrent value of photovoltaic devices constructed with the composite LBL/OEGDA film from illumination of a xenon white light source exhibited a nearly 1.5 times enhancement over the device without OEGDA. This enhancement of the photocurrent was due to the high room‐temperature ionic conductivity of the multilayer composite film. Further marked improvements of the photovoltaic performance were achieved by patterning the TiO₂ electrode using polymer stamping as a template for TiO₂ deposition. The device with patterned TiO₂ electrodes exhibited almost 10 times larger conversion efficiencies than a similar device without patterning.     

基于Alq3光耦合层的新型顶发射蓝光有机电致发光器件

研制了一种结构为Ag/Glass/ITO/TAPC/mCP/mCP∶Firpic/TPBi/LiF/Al/Ag/Alq₃的顶发射有机电致发光器件,通过在ITO玻璃衬底背面生长一层Ag反射膜,使器件发出的蓝光被反射膜反射到顶电极出射。利用顶电极表面的Alq₃光耦合层有效地提升了金属复合阴极的透射率,降低了器件的微腔效应。实验结果表明,当光耦合层厚度为30nm时,获得了最大电流效率和最大亮度分别为8.91cd/A和5758cd/m²的蓝光顶发射有机电致发光器件(TEOLED);同时,在10V电压下,其色坐标为(0.157,0.320),当亮度从1cd/m²变化到5000cd/m²时,其色坐标仅漂移(0.002,0.010),表现出良好的色稳定性。     

Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes

Monolayer graphene is used as an electrode to develop novel electronic device architectures that exploit the unique, atomically thin structure of the material with a low density of states at its charge neutrality point. For example, a single semiconductor layer stacked onto graphene can provide a semiconductor–electrode junction with a tunable injection barrier, which is the basis for a primitive transistor architecture known as the Schottky barrier field‐effect transistor. This work demonstrates the next level of complexity in a vertical graphene–semiconductor architecture. Specifically, an organic vertical p‐n junction (p‐type pentacene/n‐type N,N′‐dioctyl‐3,4,9,10‐perylenedicarboximide (PTCDI‐C₈)) on top of a graphene electrode constituting a novel gate‐tunable photodiode device structure is fabricated. The model device confirms that controlling the Schottky barrier height at the pentacene–graphene junction can (i) suppress the dark current density and (ii) enhance the photocurrent of the device, both of which are critical to improve the performance of a photodiode.