一种超薄吸波材料及其在缝隙天线中的应用

该文设计了一种超薄雷达吸波超材料,从等效电路和表面电流、电场分布分析了其吸波机理,并将其应用于波导缝隙天线的带内雷达散射截面(Radar Cross Section, RCS)减缩。该吸波材料仅由两层金属及中间的有耗介质板组成,厚度约为/175,最大吸波率达99.9%,且具有入射角和极化稳定吸波特性。将该吸波材料加载到波导缝隙天线上,实验结果表明:加载后的天线,回波损耗和增益几乎不变,在21~21角域,天线带内RCS减缩均在3 dB以上,法线方向RCS减缩最大超过17 dB。     

基于分形的吸波材料及其在微带天线中的应用

在方形贴片完美吸波材料的基础上,通过Minkowski分形和开槽,设计了一种新型完美吸波材料,并分析了其吸波原理.将该材料加载于微带天线,用于减缩天线带内雷达散射截面(RCS).仿真结果表明,相比于方形贴片吸波材料,设计材料的谐振频率下降了8.6％,最大吸波率达99.97％.加载该材料后,天线的辐射性能没有降低,而其带内RCS得到有效减缩.实测结果与仿真结果较为吻合,表明了该材料可以用于微带天线的带内隐身.     

基于宽带吸波体的低雷达散射截面平面印刷磁电偶极子天线设计

该文设计了一种工作于X波段的平面印刷磁电偶极子天线,并设计了一种加载集总电阻的宽入射角、极化不敏感、宽频带吸波体(WBMA)。当平面波垂直入射时,吸波体在7.2~12.6 GHz范围内的吸波率大于90%,入射角增加至45时仍能在X波段保持90％以上的吸波率。通过将WBMA加载在天线四周,实现了天线雷达散射截面(RCS)的大幅缩减。实测和仿真结果表明:不同极化波垂直入射时,天线单站RCS减缩3 dB带宽为6.6~14.4 GHz,最大减缩量达23.8 dB。中心频点10 GHz处,TE极化波照射时,双站RCS能实现90角域内的减缩,TM极化波照射时,在35角域内实现了减缩,同时天线辐射性能几乎保持不变。     

双频HIS的设计及其在微带天线RCS减缩中的应用

设计了一种新型双频高阻抗表面(HIS)结构,并将其应用在双频微带天线的带内雷达散射截面(RCS)减缩中.通过在蘑菇状EBG结构的表面贴片开槽实现两个同相反射相位带隙,将该HIS结构加载在双频微带天线周围.仿真和实测结果表明,当天线周围加载HIS结构后,天线辐射性能基本不变,同时带内RCS分别获得5.5dB和6.5dB的减缩.     

基于超材料的低RCS微带天线设计

近年来，电磁超材料因具有灵活调控电磁波的能力而被广泛应用在天线雷达散射截面（Radar Cross section,RCS）减缩设计中。实现天线RCS值减缩设计的难点是在不影响天线自身辐射特性的条件下，有效拓展天线RCS值减缩带宽。为此，基于超材料的完美吸波电磁特性，通过多个方环形结构以及加载多个电阻实现宽频带设计，设计一个超宽频带单层超材料吸波单元，将其应用在天线低RCS值设计中，设计一款适用于无人机通信频段的低RCS微带天线。通过仿真测试对设计天线和参考天线进行对比，结果表明，设计的天线在保证自身辐射特性不变的情况下，能够在6.5～18 GHz频带内实现大于10 dB的减缩效果，为该领域的研究提供了一种新方法。     

基于分形超材料吸波体的微带天线设计

基于十字分形结构,设计了一种小型化、超薄、高吸波率以及无表面损耗层的超材料吸波体。该吸波体是由两层金属及其中间的有耗介质组成,上层金属是由周期性蚀刻十字分形的贴片组成的电谐振器,下层金属不蚀刻,作为整个金属地板。通过优化结构参数,吸波体单元尺寸仅为0.13λ,厚度为0.0093λ,最大吸波率达99.6%。将此吸波体加载于普通微带天线上,制备了一种新型超材料天线。仿真和实验结果表明:相比普通微带天线,新天线在5.52~5.68 GHz工作频带内,法向RCS减缩都在3 dB以上,最大减缩量达13.5 dB,单站RCS在-18°~+18°角域减缩超过3 dB,且天线辐射性能保持不变,证实了该吸波体具有良好的吸波效果,可以应用于微带天线的带内隐身。     

宽带低RCS超表面天线阵设计

该文利用电磁超表面与微带天线的结构高度相似性,设计了2种辐射特性几乎一致且具有反射相位差异的超表面天线,通过将2种天线单元进行棋盘布阵,在x极化波和y极化波照射下分别利用相位相消及匹配负载吸收实现了天线阵带内散射能量的抑制。实测与仿真结果表明:该超表面天线工作于6.0～8.5 GHz。x极化波垂直入射时天线单站RCS减缩6 dB带宽为6.2～10.5 GHz,最大减缩量达21.07 dB。y极化波垂直入射时天线的带内RCS减缩依然能达到3 dB以上。且实测与仿真结果吻合良好。该设计方法为实现天线阵带内RCS减缩提供了新的设计思路。     

基于UC-EBG的微带天线RCS减缩方法

针对微带天线的带内雷达散射截面减缩问题,提出了一种在天线表面加载共面紧凑型电磁带隙结构(UC-EBG),通过散射对消,实现天线雷达散射截面(RCS)减缩的方法。分析了在不同参数下UC-EBG结构同相反射相位带隙随频率的变化情况。仿真和实测结果表明:加载UC-EBG结构后,天线带内RCS得到了很大减缩,最大减缩达到了14dB,同时微带天线回波损耗基本保持不变,天线的增益不仅未受影响而且有所增加。证实了UCEBG可以很好地应用于微带天线的带内隐身。     

级联型高阻抗表面减缩双频天线雷达截面方法

针对双频天线的带内雷达散射截面(Radar Cross Section,RCS)减缩难题,提出一种高阻抗表面(High Impedance Surface,HIS)加载技术的隐身新途径:对应天线的两个工作频段,基于同相反射相位带隙,设计两种HIS结构,进行级联后加载到双频天线结构中,通过二者散射场的对消,实现入射波垂直照射下、天线两个工作频带内RCS的减缩.结果表明:加载级联HIS结构后,双频天线基本保持其原有辐射特性,同时,在两个工作频带内分别实现了5dB和15dB以上的减缩效果.     

基于相位梯度表面的缝隙阵列天线宽带RCS减缩

提出了一种基于耶路撒冷十字单元的相位梯度表面, 并将该表面加载到缝隙阵列天线表面.通过利用该表面将空间波(propagating wave, PW)转化为表面波(surface wave, SW)及奇异反射特性, 天线可以在很宽的频带内实现显著的雷达散射截面(radar cross section reduction, RCS)减缩.与参考天线相比, 设计天线在TE和TM两种极化波垂直和斜入射状态下均在6~18 GHz频带范围内实现了单站RCS减缩, 并且在9.5 GHz处的最大减缩量达到20 dB.与传统的天线RCS减缩技术相比, 该方法可以在保证天线原本辐射性能的基础上同时实现天线带内和带外的RCS减缩.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first