正向栅控二极管的R—G电流直接表征NMOSFET沟道pocket或halo注入区

使用半导体器件数值分析工具DESSISE－ISE,对正向栅控二极管R－G电流表征NMOSFET沟道pocket或halo注入区进行了详尽的研究,数值分析表明,由于栅控正向二极管界面态R－G电流的特征,沟道工程pocket或halo注入区的界面态会产生一个独立于本征沟道界面态R－G电流特征峰的附加特征峰,该峰的幅度对应于pocket或halo区的界面态大小,而其峰位置对应于pocket或halo区的有效表面浓度,数值分析还进一步显示了该附加特征峰的幅度对pocket或halo区的界面态变化的敏感性和该峰的位置对pocket或halo区的有效表面浓度变化的敏感性,根据提出的简单表达式,可以用实验得到的R－G电流的特征直接抽取沟道工程的pocket或halo注入区的界面态和的有效表面浓度。     

正向栅控二极管的R-G电流直接表征NMOSFET

使用半导体器件数值分析工具DESSISE-ISE,对正向栅控二极管R-G电流表征NMOSFET沟道pocket或halo注入区进行了详尽的研究.数值分析表明:由于栅控正向二极管界面态R-G电流的特征,沟道工程pocket或halo注入区的界面态会产生一个独立于本征沟道界面态R-G电流特征峰的附加特征峰.该峰的幅度对应于pocket或halo区的界面态大小,而其峰位置对应于pocket或halo区的有效表面浓度.数值分析还进一步显示了该附加特征峰的幅度对pocket或halo 区的界面态变化的敏感性和该峰的位置对pocket或halo区的有效表面浓度变化的敏感性.根据提出的简单表达式,可以用实验得到的R-G电流的特征直接抽取沟道工程的pocket或halo注入区的界面态和有效表面浓度.     

栅控二极管正向 R- G电流对 SOI体陷阱特征和硅膜结构的依赖性

使用半导体器件数值分析工具 DESSISE- ISE,对侧向的 P+ P- N+栅控二极管的正向 R- G电流对 SOI体陷阱特征和硅膜结构的依赖性进行了详尽的研究 .通过系统地改变硅膜体陷阱的密度和能级分布 ,得出了相应的 P+ P-N+ 栅控二极管的正向 R- G电流的变化 .同时 ,表征硅膜结构的参数如沟道掺杂和硅膜厚度的变化也使器件从部分耗尽向全耗尽方向转化 ,分析了这种转化对 R- G电流大小和分布的影响     

新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究

报道了用新的正向栅控二极管技术分离热载流子应力诱生的SOI-MOSFET界面陷阱和界面电荷的理论和实验研究.理论分析表明:由于正向栅控二极管界面态R-G电流峰的特征,该峰的幅度正比于热载流子应力诱生的界面陷阱的大小,而该峰的位置的移动正比于热载流子应力诱生的界面电荷密度. 实验结果表明:前沟道的热载流子应力在前栅界面不仅诱生相当数量的界面陷阱,同样产生出很大的界面电荷.对于逐渐上升的累积应力时间,抽取出来的诱生界面陷阱和界面电荷密度呈相近似的幂指数方式增加,指数分别为为0.7 和0.85.     

新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究

报道了用新的正向栅控二极管技术分离热载流子应力诱生的SOI-MOSFET界面陷阱和界面电荷的理论和实验研究.理论分析表明:由于正向栅控二极管界面态R-G电流峰的特征,该峰的幅度正比于热载流子应力诱生的界面陷阱的大小,而该峰的位置的移动正比于热载流子应力诱生的界面电荷密度. 实验结果表明:前沟道的热载流子应力在前栅界面不仅诱生相当数量的界面陷阱,同样产生出很大的界面电荷.对于逐渐上升的累积应力时间,抽取出来的诱生界面陷阱和界面电荷密度呈相近似的幂指数方式增加,指数分别为为0.7 和0.85.     

正向栅控二极管监测F- N电应力诱生的SOI- MOSFET界面陷阱

报道了正向栅控二极管 R- G电流法表征 F- N电应力诱生的 SOI- MOSFET界面陷阱的实验及其结果 .通过体接触的方式实现了实验要求的 SOI- MOSFET栅控二极管结构 .对于逐渐上升的累积应力时间 ,测量的栅控二极管电流显示出明显增加的 R- G电流峰值 .根据 SRH理论的相关公式 ,抽取出来的诱生界面陷阱密度是随累积应力时间的上升而呈幂指数的方式增加 ,指数为 0 .4.这一实验结果与文献先前报道的基本一致     

热载流子诱生MOSFET/SOI界面陷阱的正向栅控二极管技术表征

本文完成了热载流子诱生MOSFET/SOI界面陷阱正向栅控二极管技术表征的实验研究 .正向栅控二极管技术简单、准确 ,可以直接测得热载流子诱生的平均界面陷阱密度 ,从而表征器件的抗热载流子特性 .实验结果表明 :通过体接触方式测得的MOSFET/SOI栅控二极管R G电流峰可以直接给出诱生的界面陷阱密度 .抽取出来的热载流子诱生界面陷阱密度与累积应力时间呈幂指数关系 ,指数因子约为 0 787     

栅控二极管正向R-G电流对SOI体陷阱特征和硅膜结构的依赖性

使用半导体器件数值分析工具DESSISE-ISE,对侧向的P＋P－N＋栅控二极管的正向R-G电流对SOI体陷阱特征和硅膜结构的依赖性进行了详尽的研究．通过系统地改变硅膜体陷阱的密度和能级分布,得出了相应的P＋P－N＋栅控二极管的正向R-G电流的变化．同时,表征硅膜结构的参数如沟道掺杂和硅膜厚度的变化也使器件从部分耗尽向全耗尽方向转化,分析了这种转化对R-G电流大小和分布的影响．     

热载流子诱生MOSFET／SOI界面陷阱的正向机控二极管技术表征

本文完成了热载流子诱生MOSFET/SOI界面陷阱正向栅控二极管技术表征的实验研究。正向栅控二极管技术简单、准确，可以直接测得热载流子诱生的平均界面陷阱密度，从而表征器件的抗热载流子特性。实验结果表明：通过体接触方式测得的MOSFET/SOI栅控二级管R-G电流峰可以直接给出诱生的界面陷阱密度。抽取出来的热载流子诱生界面陷阱密度与累积应力时间呈幂指数关系，指数因子约为0.787。     

栅控二极管R-G电流法表征SOI-MOS器件埋氧层界面陷阱的敏感性分析

通过数值模拟手段 ,用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对 R- G电流大小的影响规律 .结果表明 :无论在 FD还是在 PD SOI MOS器件中 ,界面陷阱密度是决定 R- G电流峰值的主要因素 ,硅膜厚度和沟道掺杂浓度的影响却因器件的类型而异 .为了精确地用 R- G电流峰值确定界面陷阱的大小 ,器件参数的影响也必须包括在模型之中     

FORWARD GATED-DIODE R-G CURRENT METHOD:A SIMPLE NOVEL TECHNIQUE FOR CHARACTERIZING LATERAL LIGHTLY DOPING REGION OF LDD MOSFET's

This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET's simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region's interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.     

FORWARD GATED-DIODE R-G CURRENT METHOD:A SIMPLE NOVEL TECHNIQUE FOR CHARACTERIZING LATERAL LIGHTLY DOPING REGION OF LDD MOSFET’s

 This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET’s simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region’s interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET’s in the current ULSI technology.     

Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current

Characterized back interface traps of SOI devices by the Recombination\|Generation (R\|G) current has been analyzed numerically with an advanced semiconductor simulation tool,namely DESSIS\|ISE.The basis of the principle for the R\|G current's characterizing the back interface traps of SOI lateral p\++p\+-n\++ diode has been demonstrated.The dependence of R\|G current on interface trap characteristics has been examined,such as the state density,surface recombination velocity and the trap energy level.The R\|G current proves to be an effective tool for monitoring the back interface of SOI devices.     

Determination of interface state density in small-geometry MOSFETsby high-low-frequency transconductance method

A method for determining the interface state profile in small-geometry MOSFETs operating in the linear region is described. By comparing the measured high- and low-frequency transconductance of the MOSFET, the interface state density is determined. In addition, using a static drain current measurement, the surface potential can be related to the gate bias without knowledge of the doping profile in the channel     

栅控二极管R-G电流法表征SOI-MOS器件埋氧层界面陷阱的敏感性分析

通过数值模拟手段,用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R-G电流大小的影响规律.结果表明:无论在FD还是在PD SOI MOS器件中,界面陷阱密度是决定R-G电流峰值的主要因素,硅膜厚度和沟道掺杂浓度的影响却因器件的类型而异.为了精确地用R-G电流峰值确定界面陷阱的大小,器件参数的影响也必须包括在模型之中.     

Minority-carrier injection into polysilicon emitters

The hole transport equation is solved for a polysilicon emitter of a bipolar transistor. The recombination at the grain boundaries as well as at the poly-monosilicon interface is considered. An effective surface recombination velocity is defined and calculated as a function of surface state density and number of grain boundaries. A comparison between the injected hole current into the diffused region of both an Al contact and a polysilicon-silicon emitter is given as a function of surface state density for different numbers of grain boundaries. Also the injected current is calculated for different values of junction depth and surface concentration.     

Design strategy of localized halo profile for achieving sub-50 nm bulk MOSFET

This paper presents a design strategy to optimize short-channel effects with localized halo profile for achieving sub-50 nm bulk MOSFET devices. With the optimal choice of the location of heavily doped halo, it can be simultaneously accomplished to improve the roll-off of threshold voltage and to relieve drain leakage current without raising the low threshold voltage. To reduce the impact of heavy halo doping concentration on the threshold voltage, it is essential to have a deep and short enough halo doping profile. The halo-to-extension spacing is the most effective design parameter to control the band-to-band leakage current and the threshold-voltage roll-off. With adequate halo-to-extension spacing, a much heavier halo doping concentration can be used to suppress the roll-off of threshold voltage without raising the drain leakage current. The sidewall oxide of the insulated shallow extension structure demonstrates the feasibility of the precise control of the halo-to-extension spacing to achieve a sub-50 nm bulk MOSFET with fully CMOS compatible process.     

A comprehensive model for inversion layer hole mobility forsimulation of submicrometer MOSFET's

A comprehensive model of effective (average) mobility and local-field mobility for holes in MOSFET inversion layers is presented. The semiempirical equation for effective mobility, coupled with the new local-field mobility model, permits accurate two-dimensional simulation of source-to-drain current in MOSFETs. The model accounts for the dependence of mobility on transverse and longitudinal electric fields, channel doping concentration, fixed interface charge density, and temperature. It accounts not only for the scattering by fixed interface charges, and bulk and surface acoustic phonons, but it also correctly describes screened Coulomb scattering at low effective transverse fields (near threshold) and surface roughness scattering at high effective transverse fields. The model is therefore applicable over a much wider range of conditions compared to earlier reported inversion layer hole mobility models while maintaining a physically based character     

Detailed investigation of n-channel enhancement 6H-SiC MOSFETs

Basic MOSFET parameters like inversion layer mobility, threshold voltage, intrinsic mobility reduction factor and interface state density extracted from the subthreshold slope were examined in detail for 6H-SiC enhancement-mode n-channel MOSFETs. The inversion layer mobility and the threshold voltage were determined as a function of substrate doping concentration as well as device temperature. The interface state density was studied for different substrate doping concentrations. The inversion layer mobility was found to decrease strongly with increasing substrate doping. In contrast to earlier reports the inversion layer mobility decreases also with temperature. Furthermore, the threshold voltage depends more pronounced on substrate doping and temperature than theoretically expected. The interface state density extracted from the subthreshold slope increases significantly with substrate doping concentration. All these phenomena are consistently interpreted by the classical MOSFET behavior which is extended by acceptor like interface states. These states are located close to the conduction band and exhibit a density increasing drastically toward the band edge