发明与专利

抗干扰车轮传感器，玻璃容栅传感器，区域性位置传感器装置，植物茎秆生长传感器，数据采集传感器，气路装置设置流量传感器的尘埃粒子计数器。[编者按]     

基于深度学习算法的图像传感器误差自动校正研究

图像传感器受到环境、镜头畸变等因素影响，采集数据存在一定误差，为了改善图像传感器采集效果，提出了基于深度学习算法的图像传感器误差自动校正方法。首先分析图像传感器误差校正的研究进展，分析图像传感器误差的影响因素，然后利用支持向量机对图像传感器偏移角度进行补偿，并采用深度学习算法根据影响因素建立误差自动校正模型，最后通过粗标定机制对传感器的响应参数进行拟合，实现图像传感器误差自动校正。实验结果表明深度学习算法可以提高图像传感器数据精度，校正后误差较小，校正速度较快，具有一定的实际应用价值。     

半导体磁敏电阻和传感器

ＩｎＳｂ磁敏电阻元件用磁敏电阻传感器是一种新型的，重要的磁敏元件和传感器。首先，简要介绍了ＩｎＳｂ磁敏电阻元件和磁敏电阻传感器的工作原理，结构，性能等；分别介绍磁敏电阻传感器，磁性墨水文字图形识别传感器，齿轮传感器，磁性编码器，直线位移传感器，齿轮传感器，磁性编码器，直线位移传感器，无接触电位器等工作原理，结构，主要技术性能和应用。     

考虑不平稳信号的振动传感器稳定性控制技术

外界因素干扰造成振动传感器产生异常振动，导致信号传递不平稳，影响传感器使用效果。为了提升振动传感器稳定性，提出考虑不平稳信号的振动传感器稳定性控制技术。根据振动信号的幅度谱均值计算标准差，通过相位计算判定振动信号平稳成分，分解振动传感器信号，采用动态小波阈值的方法，对振动传感器不平稳信号进行降噪。构建振动传感器运动模型，获取振动传感器频率，采用传递函数对振动传感器传递信号进行校正，以此实现振动传感器稳定性控制。测试结果表明，所提方法的振动频率信号幅值波动较小，处于27 dB～33 dB之间；Z轴向校正振动传感器灵敏度影响效果较高，振动频率为2 500 Hz时可以达到0.20 nm/g_n;归一化频谱较为稳定，处于27 dB～33 dB之间。由此可知，所提方法具有较强的稳定性。     

基于迭代学习的地铁车辆速度传感器故障识别

为车辆管理人员及时制定维修策略提供依据，该文设计了基于迭代学习的地铁车辆速度传感器故障识别方法。依据霍尔速度传感器在地铁车辆制动系统运行时的输出波形，构建故障状态时速度传感器的线性时不变系统。利用迭代学习算法的迭代过程，依据线性时不变系统的理论输出值与速度传感器的实时采集值，利用跟踪器迭代运算传感器残差值，获取传感器故障信号；将传感器故障信号输入学习过程的决策逻辑识别模型，决策逻辑识别模型利用加权KNN分类器，输出地铁车辆速度传感器故障类型，实现地铁车辆速度传感器故障识别。实验结果表明，该方法可以精准识别地铁车辆速度传感器的虚接故障、断线故障等不同类型故障，故障识别准确率高。     

电子鼻用于检测掺假牛奶时其传感器阵列的优化

目前电子鼻在食品领域已有广泛的应用，由于气味组成成分复杂，仅用单个气体传感器是无法评定气体质量，因此气体传感器阵列应运而生。在对不同的食品进行检测时，电子鼻的传感器阵列的构成是不同的。本文运用PEN2便携式电子鼻对掺假牛奶进行检测，用方差分析、主成分分析和聚类分析对信号进行分析，得到由8个传感器组成的用于检测掺假牛奶的最佳传感器阵列。用这8个传感器组成的传感器阵列对掺假牛奶进行检测区分，结果用LDA方法 (线性判别式分析) 进行分析，在LDA分析图上，不同比例掺假的牛奶能被明显地区分。新的传感器阵列具有较少的传感器和与原传感器阵列相同的检测区分能力。     

造纸过程纸张定量传感器故障诊断方法研究

本文介绍一种作者提出的容错型纸张定量传感器的原理及性能，给出了应用卡尔曼滤波器的传感器故障诊断算法，与容错型纸张定量传感器结合，实现了对传感器部分部件故障的容错，从而提高了传感器的可靠性。仿真实验结果表明，文中所给的故障诊断方法能及时准确探明和隔离出传感器故障。     

热量表专用流量传感器

该传感器是一种旋翼式流量传感器，其特征在于它还由与流量传感器壳体相连接的流量传感器上盖及可拆卸的流量传感器表芯所构成，所说的可拆卸流量传感器表芯包括叶轮、叶轮盖、叶轮壳及宝石轴承组件，可拆卸的流量传感器表芯与流量传感器上盖间亦为可拆卸连接，流量传感器表芯与流量传感器上盖及流量传感器壳体间分别依密封圈密封连接结构成双密封结构，密封圈封装于可拆卸韵流量传感器表芯的出水口。     

发明与专利

液位传感器，模拟传感器接口板，一种原位测量硫酸盐还原菌含量的传感器，高精度容栅传感器，变光型浊度传感器，出口流量传感器[编者按]     

发明与专利

抗干扰车轮传感器，玻璃容栅传感器，植物茎秆生长传感器，数据采集传感器，气路装置设置流量传感器的尘埃粒子计数器     

多晶硅薄膜残余应力在线测量技术

介绍了多晶硅薄膜中的残余应力对微结构性能的影响,分析了应力在线测量技术的必要性。说明了T型微检测结构的测试原理,并基于单T型结构设计出双T型检测结构。探讨了检测结构的制作工艺,加工出试验样片,用刻度显微镜测量出试验数据,推导出误差修正公式,结合M athCAD软件计算出应力值。在结论部分,指出了双T型检测结构能够提高测量精度,并给出了多晶硅薄膜残余应力在线测量技术的工艺实现方法。     

基于AIN绝缘的多晶硅高温压力传感器设计

探讨了一种多晶硅高温压力传感器的设计方法,采用AIN作硅衬底和多晶硅力敏电阻条之间的电绝缘层,由于无p-n结,力敏电阻无反向漏电,使制作的压力传感器特性好。利用多晶硅材料在高温条件下能够表现出良好的压阻特性,考虑其纵横向压阻效应的不同,作了理论分析,在此基础上制作力敏电阻条。利用有限元分析方法,借助MARC软件,模拟了传感器承压弹性膜的应力场分布,确定了多晶硅力敏电阻条的位置和排列方式。并且施加10kPa压力日寸,模拟了不同膜厚t与对应的最大应力σ11的曲线;模拟了11方向主应力COMP11边缘中点应力为一特定值时所需压力PN与膜厚t的关系曲线。     

A novel high sensitive MEMS intraocular capacitive pressure sensor

This paper presents a novel high sensitive MEMS capacitive pressure sensor that can be used as a part of LC tank implant circuit for biomedical applications. The pressure sensor has been designed to measure pressures in the range of 0–60 mmHg that is in the range of intraocular pressure sensors. Intraocular pressure sensors are important in detection and treatment of an incurable disease called glaucoma. In this paper two methods are presented to improve the sensitivity of the capacitive pressure sensor. First low stress doped polysilicon material is used as a biocompatible material instead of p++silicon in previous work (Gu in Microfabrication of an intraocular pressure sensor, M.Sc Thesis, Michigan State University, Department of Electrical and Computer Engineering, 2005) and then some slots are added to the poly Si diaphragm. The novelty of this research relies on adding some slots on the sensor diaphragm to reduce the effect of residual stress and stiffness of diaphragm. The slotted diaphragm makes capacitive pressure sensor more sensitive that is more suitable for measuring intraocular pressure. The results yield a sensor sensitivity of 1.811 × 10^?5 for p++silicon clamped, 2.464 × 10^?5 1/Pa for polysilicon clamped and 1.13 × 10^?4 1/Pa for polysilicon slotted diaphragm. It can be seen that the sensitivity of the sensor with slotted poly Si diaphragm increased 6.2 times compared with previous work (clamped p++silicon diaphragm).     

Polysilicon sacrificial layer etching using ClF3 for thin film encapsulation of silicon acceleration sensors with high aspect ratio

We present a new thin film encapsulation technique for surface micromachined sensors using a polysilicon multilayer process. The main feature of the encapsulation process is that both the sacrificial layer above the silicon sensor structure and the cap layer consist of epitaxial polysilicon. The sacrificial layer is removed by chlorine trifluoride (ClF₃) plasmaless gas-phase etching through vents within the cap layer. The perforated cap membrane is sealed by a nonconformal oxide deposition. The method has been applied to a silicon surface micromachined acceleration sensor with high aspect ratio structures, but is broadly applicable. Capacitance–voltage measurements have been performed to show the electrical functionality of the accelerometer.     

基于牺牲层技术的高过载压力传感器芯片

提出了一种基于牺牲层技术的高过载压力传感器芯片。这种传感器充分利用了多晶硅机械特性和多晶硅纳米膜的压阻特性优势,提高了传感器满量程输出和过载能力。利用有限元方法设计了仿真模型,通过对弹性膜片应力分布的静态分析和非线性接触分析,给出了提高这种压力传感器满量程输出和过载能力的设计方法。并试制了量程为2.5 MPa的传感器芯片样品。测试结果表明样品的过载压力超过7倍量程,5 V供电条件下,满量程输出达到362 m V。     

油田测井用压力传感器的研制∀

油田测井用压力传感器在温度、量程和封装等方面有着特殊的要求,我们提出了一种新型多晶硅压力传感器,其工作温度高(-20～220°C),压力量程宽(2～30 MPa),具有较高的稳定度(<4×10-4FS/°C).文中多晶硅膜的零点温漂TCR 和灵敏度温漂TCS特性,给出了片内温度补偿的方法.     

Process Temperature–Dependent Mechanical Properties of Polysilicon Measured Using a Novel Tensile Test Structure

A new test structure was developed to measure three major unknown mechanical parameters of deposited thin films, i.e., fracture strength, Young's modulus, and residual stress. The structure was designed to have plural specimens of a deposited thin film bridging the gap of the silicon substrate and enables the easy and efficient tensile testing of the film. It was used to measure those parameters of various polysilicon films. Polysilicon is commonly used as a structural material of microelectromechanical systems (MEMS) after being deposited at a temperature below 600 degC and annealed at a temperature around 1000 degC to remove the residual stress. On the other hand, polysilicon can be also deposited at a temperature higher than 600 degC. The three parameters of polysilicon films depend on process temperature and were evaluated using the new test structure. Concerning the strength, films deposited at 560 degC had the highest strength when annealed at 850 degC. Films deposited at 625 degC and annealed at 1050 degC were weaker than those deposited at 560 degC and annealed at 1050 degC. Young's modulus was found to behave in a similar way. The trend of the residual stress was the same as already reported, but its local evaluation was possible in combination with the tensile strength determination     

高灵敏压力传感器过载保护结构设计

采用微机电系统(MEMS)牺牲层技术制作的压力传感器具有芯片尺寸小,灵敏度高的优势,但同时也带来了提高过载能力的难题.为此,利用有限元法,对牺牲层结构压阻式压力传感器弹性膜片的应力分布进行了静态线性分析和非线性接触分析.通过这两种分析方法的结合,准确的模拟出过载状态下传感器的应力分布.在此基础上给出了压力传感器的一种结...     

Calibration of residual stress difference of MetalMUMPs silicon nitride films

The metal multi-user MEMS processes (MetalMUMPs) provide one nickel film, two silicon nitride films and one polysilicon film for constructing various nickel MEMS devices. The two silicon nitride films are either bonded together as a bi-layered structure or they sandwich the polysilicon film to form a tri-layered structure to support nickel structures. The residual stress difference of the two silicon nitride films causes undesired deformations of suspended MetalMUMPs devices. In this paper, the residual stress difference of the two MetalMUMPs silicon nitride thin films is calibrated and the result is 169 MPa. The Young’s modulus of the MetalMUMPs nitride films is also measured, which is 209 GPa.     

多晶硅压力传感器热灵敏度漂移补偿技术

列举了几种多晶硅高温压力传感器的热灵敏度漂移补偿方法,并分别讨论了它们的原理及特点。对采用多晶硅热敏电阻器进行补偿的两种补偿方法进行了详细地分析和测试。实验表明,这两种补偿法更适用于多晶硅压力传感器。