High dielectric tunability of Ba0.6Sr0.4TiO3 thin film deposited by radio-frequency magnetron sputtering

In microwave tunable devices, one of the major challenges encountered is the simultaneous minimization of the material's dielectric loss and maximization of dielectric tunability. In this work, Ba_0.6Sr_0.4TiO₃ thin film with the thickness of 300 nm was deposited on Pt/SiO₂/Si substrates using radio-frequency magnetron sputtering technique, and its dielectric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 °C, well-crystallized Ba_0.6Sr_0.4TiO₃ film was deposited. The dielectric constant and dielectric loss of the film at 100 kHz are 300 and 0.033, respectively. Due to the good crystallinity of the Ba_0.6Sr_0.4TiO₃ films deposited by radio-frequency magnetron sputtering, high dielectric tunability up to 38.3% is achieved at a low voltage of 4.5 V.     

Microwave dielectric properties of Ba2 − xSrxLa3Ti3NbO15 ceramics

High dielectric constant and low loss ceramics in the system Ba_2 − xSr_xLa₃Ti₃NbO₁₅ (x = 0-1) have been prepared by conventional solid-state ceramic route. Ba_2 − xSr_xLa₃Ti₃NbO₁₅ solid solutions adopted A₅B₄O₁₅ cation-deficient hexagonal perovskite structure for all compositions. The materials were characterized at microwave frequencies. They show a linear variation of dielectric properties with the value of x. Their dielectric constant varies from 48.34 to 43.03, quality factor Q_u × f from 20,291 to 39,088 GHz and temperature variation of resonant frequency from 8 to 1.39 ppm/°C as the value of x increases. These low loss ceramics might be used for dielectric resonator (DR) applications.     

Self-buffered BaxSr1−xTiO3 films by sol-gel and RF magnetron sputtering method

Ba_xSr_1−xTiO₃ (BST) films are fabricated by sol-gel and RF (radio frequency) magnetron sputtering method. A buffer layer with columnar grains by sol-gel method is introduced to improve the dielectric anomaly in BST films. We find that the presence of buffer layer can increase the differential dielectric constant against temperature in sol-gel derived BST films while not so with sputtered films. We explain this by an ‘expanded layer thickness model’ and an unstable crystallized surface, respectively. The obtained (dε/ε) dT is up to 6% around 11 °C by the sol-gel method.     

Composition dependent preferential orientation, dielectric and ferroelectric properties of Pb(ZrxTi1 − x)O3 thin films derived by sol-gel process

Pb(Zr_xTi_1 − x)O₃ (x = 0.35, 0.40, 0.60, 0.65) thin films were prepared by sol-gel spin on technique. From the X-ray diffraction analysis, PZT films with Zr-rich compositions (x = 0.60 and 0.65) had (111) preferential orientation and the preferential orientation changed to (100) for Ti-rich compositions (x = 0.35 and 0.40). The dielectric measurements on the above compositions at room temperature showed that the dielectric constant values were higher in Zr-rich compositions compared to Ti-rich compositions. The ferroelectric behavior measured in terms of the remnant polarization (P_r) and coercive field (E_c) up to an applied field of 260 kV/cm depicted that the Zr-rich PZT films with (111) preferential orientation had higher P_r and lower E_c values compared to the Ti-rich PZT films with (100) preferential orientation can be understood from the domain switching mechanism.     

Bottom electrodes dependence of microstructures and dielectric properties of compositionally graded (Ba1−xSrx)TiO3 thin films

Compositionally graded (Ba_1−xSr_x)TiO₃ (BST) thin films, with x decreasing from 0.3 to 0, were deposited on Pt/Ti/SiO₂/Si and Ru/SiO₂/Si substrates by radio frequency magnetron sputtering technology. The microstructure and dielectric properties of the graded BST thin films were investigated. It was found that the films on Ru electrode have better crystallization, and that RuO₂ is present between the Ru bottom electrode and the graded BST thin films by X-ray diffraction and SEM analysis. Dielectric measurement reveals that the graded BST thin films deposited on Ru bottom electrode have higher dielectric constant and tunability. The enhanced dielectric behavior is attributed to better crystallization as well as smaller space charge capacitance width and the formation of RuO₂ that is more compatible with the BST films. The graded BST films on Ru electrode show higher leakage current due to lower barrier height and rougher surface of bottom electrode.     

Different microstructure and dielectric properties of Ba1−xCaxTiO3 ceramics and pulsed-laser-ablated films

A comparative study of the microstructure and dielectric properties between Ba_1−xCa_xTiO₃ (BCT) ceramics and films were performed in the whole Ca concentration range of x = 0-1. The ceramics were prepared by conventional solid-state reaction technique and the films by the method of pulsed-laser deposition. X-ray diffraction (XRD) study of the BCT ceramics exhibited a pure tetragonal phase for x = 0-0.25, a tetragonal-orthorhombic diphase for x = 0.25-0.85 and a pure orthorhombic phase for x = 0.90-1.00. And the dielectric phase transition temperature from tetragonal to cubic was marginally affected by the Ca doping into BaTiO₃. However, BCT films deposited on Pt/Si/SiO₂/Si substrates showed a different microstructure and dielectric properties. Tetragonal-orthorhombic diphase was not found in the BCT films for x = 0.25-0.85, and a large decrease of the Curie point and diffuse phase transition were observed in the BCT films. Based on the compositional analysis, such phenomena were ascribed to the occupancy of some Ca²⁺ to the Ti⁴⁺ sites in the BCT films.     

Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1−xGex and Si1−yCy buffer layers

The structural and electrical properties of La_0.75Sr_0.25MnO₃ (LSMO) film on Bi₄Ti₃O₁₂ (BTO)/CeO₂/YSZ buffered Si_1−xGe_x/Si (0.05 ≤ x ≤ 0.2 for compressive strain), blank Si, and Si_1−yC_y/Si (y = 0.01 for tensile) were studied. X-ray high resolution reciprocal lattice mapping (HRRLM) and atomic force microscopy (AFM) show that structural properties of LSMO and buffer oxide layers are strongly related to the strain induced by amount of Ge and C contents. The RMS roughness of LSMO on Si_1−xGe_x/Si has a tendency to increase with increasing of Ge content. Electrical properties of LSMO film with Ge content up to 10% are slightly improved compared to blank Si whereas higher resistivity values were obtained for the samples with higher Ge content.     

Dielectric properties of Ba(Ti1 − xZrx)O3 solid solutions

This paper reports the structural and dielectric properties of Ba(Ti_1 − xZr_x)O₃ (x = 0-0.3) ceramics. Single-phase solid solutions of the samples were determined by X-ray diffraction. Microscopic observation by scanning electron microscope revealed dense, single-phase microstructure with large grains (20-60 μm). The evolution of dielectric behavior from a sharp ferroelectric peak (for x ≤ 0.08) to a round dielectric peak (for 0.15 ≤ x ≤ 0.25) with pinched phase transitions and successively to a ferroelectric relaxor (for x = 0.3) was observed with increasing Zr concentration. Compared with pure BaTiO₃, broaden dielectric peaks with high dielectric constant of 25,000-40,000 and reasonably low loss (tanδ: 0.01-0.06) in the Ba(Ti_1 − xZr_x)O₃ ceramics have been observed, indicating great application potential as a dielectric material.     

Ferroelectric and dielectric properties of sol-gel derived BaxSr1−xTiO3 thin films

Ferroelectric thin films of Ba_0.7Sr_0.3TiO₃, Ba_0.8Sr_0.2TiO₃, Ba_0.9Sr_0.1TiO₃ and BaTiO₃ were fabricated by a modified sol-gel technique on Pt/Ti/SiO₂/Si substrates. All the compositions crystallized in perovskite structure and consist of well-defined grains. As the value of x increases grain size of the Ba_xSr_1−xTiO₃ thin films increases while the dielectric permittivity decreases. Ba_0.7Sr_0.3TiO₃ composition possesses the highest dielectric permittivity of 748 (at 100 kHz). Hysteresis loops measured at room temperature for all compositions showed that BaTiO₃ has the largest remnant polarization of 4.8 μC/cm². The dielectric and ferroelectric properties of the sol-gel derived Ba_xSr_1−xTiO₃ thin films are strongly dependent on the Sr content and the grain size.     

Dielectric and optical properties of CaCu3Ti4O12 thin films containing Ag nanoparticles

Simple sol-gel techniques are used to prepare thin films of a high dielectric constant perovskite CaCu₃Ti₄O₁₂, containing different amounts of metallic silver nanoparticles. The formations of the silver nanoparticles are verified by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and optical absorption studies. The dielectric properties are found to be significantly affected by the presence of the silver nanoparticles. A maximum in the dielectric constant is observed at an intermediate metal particle concentration. This is explained in terms of the polarization at the particle-dielectric interface and the internal barrier layer capacitor effect. The optical absorption spectrum is compared with Mie theory in electrodynamics for the optical absorption of small particles to extract the particle size of the silver particle. Non-uniform distributions of Ag particles through the thickness of the thin films are reported.     

High piezoelectric d33 coefficient in (Ba1 − xCax)(Ti0.98Zr0.02)O3 lead-free ceramics with relative high Curie temperature

Lead-free (Ba_1 − xCa_x)(Ti_0.98Zr_0.02)O₃ (x = 0-0.04) ceramics were prepared successfully using a solid-state reaction technique. The polymorphic phase transitions (PPT) from orthorhombic to tetragonal phase around room temperature were identified in the composition range of 0 < x < 0.03. High piezoelectric coefficient of d₃₃ = 375 pC/N and planar electromechanical coupling factor of k_p = 44.1% were obtained for the samples at x = 0.01. With the increase of Ca content, the orthorhombic-tetragonal phase transitions shifted towards room temperature, while relative high Curie temperature (T_C) was still maintained about 115 °C.     

Sol-gel synthesis of lead-free (K0.5Bi0.5)0.4Ba0.6TiO3 nanorods

A kind of lead-free ferroelectric nanorods, (K_0.5Bi_0.5)_0.4Ba_0.6TiO₃, has been prepared by the sol-gel process. The phase formation, structure and morphological analyses of (K_0.5Bi_0.5)_0.4Ba_0.6TiO₃ were investigated by XRD, FTIR, Raman and TEM. The results revealed that single-crystalline (K_0.5Bi_0.5)_0.4Ba_0.6TiO₃ nanorods with width around 80 to 120 nm, and length around 200-300 nm were obtained by calcining dried gels at 800 °C for 2 h. Raman analysis of (K_0.5Bi_0.5)_0.4Ba_0.6TiO₃ nanorods indicated that A₁(TO₂) and E(TO) mode incorporated into one broad peak at around 285 cm^− 1, which can be attributed to the cation disorder (Bi, K, Ba) on the 12-fold coordinated A site of ABO₃ structure.     

Enhanced tunable dielectric properties of Ba0.5Sr0.5TiO3/Bi1.5Zn1.0Nb1.5O7 multilayer thin films by a sol-gel process

Ba_0.5Sr_0.5TiO₃(BST)/Bi_1.5Zn_1.0Nb_1.5O₇(BZN) multilayer thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol-gel method. The structures and morphologies of BST/BZN multilayer thin films were analyzed by X-ray diffraction (XRD) and field-emission scanning electron microscope. The XRD results showed that the perovskite BST and the cubic pyrochlore BZN phases can be observed in the multilayer thin films annealed at 700 °C and 750 °C. The surface of the multilayer thin films annealed at 750 °C was smooth and crack-free. The BST/BZN multilayer thin films annealed at 750 °C exhibited a medium dielectric constant of around 147, a low loss tangent of 0.0034, and a relative tunability of 12% measured with dc bias field of 580 kV/cm at 10 kHz.     

Synthesis and dielectric characterization of Ba0.6Sr0.4TiO3 ferroelectric ceramics

Ferroelectric ceramics Ba_0.6Sr_0.4TiO₃ (BST 40) were prepared, by solid-state reaction in the temperature range 1210-1450 °C. Maximum values of the ceramic densities were around 94% of their theoretical value. X-ray diffraction techniques (XRD) and scanning electron spectroscopy (SEM) were used to analyze the structure and the surface morphology of ceramics. Rounded, well defined or abnormal granular growth was observed in the SEM images, vs. sintering conditions and purity of the raw materials. In all samples, BST 40 ceramic is the major phase, but there are also present small amounts of secondary phases, as revealed in XRD diffraction patterns. Permittivity and dielectric loss measurements were performed in the temperature range − 150 to + 150 °C, and 150 Hz-5 MHz frequency values. Permittivity values rising from 1200 to 12,500, with increasing sintering temperatures, were recorded. Narrow and well defined transition peaks were noticed at higher sintering temperatures. Curie temperature was around 2 °C, for samples with the mentioned composition. Permittivity and losses vs. frequency show different behavior whether BST ceramics are in polar or non-polar state and with the distance toward phase transition. Microwave measurements performed at room temperature have shown lower values of permittivity, compared with similar data at low frequency, and dielectric losses lower than 1% at 0.7 GHz. The sintering conditions (temperatures, sintering time, etc.) and purity of the raw materials lead to important changes of transition temperatures in the polymorphic diagram, which we have built—for the other Ba1−xSrxTiO3 compositions (x = 0.25-0.90) sintered at 1260 °C for 2 h.     

Simple chemical solution deposition and thermoelectric properties of epitaxial La0.95Sr0.05CoO3 thin films

In this paper, simple chemical solution deposition method is used to prepare La_0.95Sr_0.05CoO₃ thin films on SrTiO₃ (001) substrates by acetate-based precursors. The derived film is characterized by x-ray diffraction, field-emission scanning electron microscopy and transmission electronic microscopy. The derived film is epitaxial growth with < 001>[100] La_0.95Sr_0.05CoO₃||<001>[100] SrTiO₃, indicating that the chemical solution deposition is an effective route to obtain the cobalt-based films. The resistivity, Seebeck coefficient and thermal power factor are 0.05Ω cm, 250 μV/K and 0.21 mWK^− 2m^− 1 at 300 K, respectively, which is higher than these of the ceramics, indicating epitaxial thin film is an effective route to enhance the thermoelectric properties of La_0.95Sr_0.05CoO₃.     

Preparation and characterization of La-doped Ba(1 − x)SrxTiO3 powders and thin films

Ba_(1 − x)Sr_xTiO₃ powders with different Ba/Sr ratios (x = 0.10, 0.25, 0.40, 0.55, 0.70) and La-doped Ba_0.9Sr_0.1TiO₃·yLa powders (y = 0.002, 0.004, 0.006, 0.008, 0.010) have been prepared by sol-gel technology using dehydrated barium-acetate, strontium-carbonate, lanthanum-nitrate, and titanium-isopropoxide as raw materials. The experimental results show that the dielectric properties of Ba_(1 − x)Sr_xTiO₃ powders depend on the Ba/Sr ratios. When the Sr fraction is 0.10, the dielectric constant is relatively higher and the dielectric loss is relatively lower, which are more than 2000 and less than 2.0 × 10^− 2 at 1000 Hz, respectively, the most important is that this kind of powder has better frequency stability. La-doping can increase the dielectric constant distinctly, but the dielectric loss can also be increased. Their dielectric properties at 1.0 × 10³ Hz are better than those at 1.0 × 10⁵ Hz. At 1.0 × 10³ Hz the dielectric constant is much higher, while the dielectric loss is much lower. The dielectric constant of different La-doping contents is nearly 3.5 × 10⁴ and the dielectric loss is less than 0.20 when La fraction is 0.008. The La-doped BST sample also has better frequency stability, especially at high frequency. La-doped BST thin films are successfully deposited on mild steel substrates by using plasma spray system with suspension precursors of Ba_0.90Sr_0.10TiO₃·0.8La powders. The XRD patterns of Ba_0.90Sr_0.10TiO₃ and Ba_0.90Sr_0.10TiO₃·0.8La powders are almost the same. No new peaks appear after La-doping, but the peaks move slightly to a larger degree, which indicates that the element La has entered the lattice of the Ba_0.90Sr_0.10TiO₃ and has made the constant of the crystal cell reduce. The XRD pattern of the thin films is just like that of the Ba_0.90Sr_0.10TiO₃·0.8La powders except a peak corresponding to Fe substrate. The SEM results show that the thin films have a uniform and smooth surface. The morphology of cross-section shows a columnar grain structure indicating smooth surface and uniform thickness of the film. The thickness of the film is about 15 um. The thin films obtained are expected to be prospective material for applications in tunable microwave devices.     

Microstructure and electrical properties of Ba0.7Sr0.3(Ti1 − xZrx)O3 thin films prepared on copper foils with sol-gel method

Ba_0.7Sr_0.3(Ti_1 − xZr_x)O₃ (x = 0, 0.1, 0.2) (BSZT) thin films have been prepared on copper foils using sol-gel method. The films were annealed in an atmosphere with low oxygen pressure so that the substrate oxidation was avoided and the formation of the perovskite phase was allowed. The X-ray diffraction results show a stable polycrystalline perovskite phase, with the diffraction peaks of the BSZT films shifting toward the smaller 2θ with increasing Zr content. Scanning electron microscopy images show that the grain size of the BSZT thin films decreases with increasing Zr content. High resolution transmission electron microscopy shows the clear lattice and domain structure in the film. The dielectric peaks of the BSZT thin films broaden with increasing Zr content. Leakage current density of Ba_0.7Sr_0.3(Ti_1 − xZr_x)O₃ (x = 0.1) thin film is the lowest over the whole applied voltage.     

Synthesis and characterization of (CuO)x(ZnO)1 − x composite thin films with tunable optical and electrical properties

Mixed (CuO)_x(ZnO)_1 − x composite films have been prepared on glass substrates by a sol-gel spin coating method using copper acetate hydrate and zinc acetate dihydrate as precursors. The surface morphology and crystal structure of the films were investigated by field emission scanning electron microscopy and x-ray diffraction, respectively. It was observed that the crystal structure changed from wurtzite (ZnO) to monoclinic (CuO) as the Cu content increased from 0% to 100% in the films. UV-Vis absorption and photoluminescence measurements indicated that the optical properties can be tuned continuously from pure ZnO to pure CuO as the Cu content was increased, following the expected trends for a transition from ZnO to CuO. The resistivity of the films decreased by three orders of magnitude as Cu increased from 0% to 100%. These semiconducting composite oxides with tunable optical and electrical properties have potential applications in electronics and optoelectronics.     

Preparation and characterization of Ba1 − xSrxTiO3 thin films deposited on Pt/SiO2/Si by sol-gel method

BST thin films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Stoichiometric (Ba_1 − xSr_x)TiO₃ (BST) thin films have been prepared on Pt/SiO₂/Si substrates using sol-gel method. The BST films were characterized by X-ray fluorescence (XRF) spectroscopy analysis, X-ray diffraction (XRD), scanning electron microscope (SEM) and electrical measurements. The relationships of processing parameters, microstructures, and dielectric properties are discussed. The results show that the films exhibit pure perovskite phase through rapid thermal anneal at 700 °C and their grain sizes are about 20-40 nm. The dielectric constants of BST5, BST10, BST15 and BST20 are 323, 355, 382 and 405, respectively, at 80 kHz.     

Interfacial characteristics and dielectric properties of Ba0.65Sr0.35TiO3 thin films

Ba_0.65Sr_0.35TiO₃ (BST) thin films were deposited on Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) depth profiling data show that each element component of the BST film possesses a uniform distribution from the outermost surface to subsurface, but obvious Ti-rich is present to BST/Pt interface because Ti⁴⁺ cations are partially reduced to form amorphous oxides such as TiO_x (x < 2). Based on the measurement of XPS valence band spectrum, an energy band diagram in the vicinity of BST/Pt interface is proposed. Dielectric property measurements at 1 MHz reveal that dielectric constant and loss tangent are 323 and 0.0095 with no bias, while 260 and 0.0284 with direct current bias of 25 V; furthermore, tunability and figure of merit are calculated to be 19.51% and 20.54, respectively. The leakage current density through the BST film is about 8.96 × 10^− 7 A/cm² at 1.23 V and lower than 5.66 × 10^− 6 A/cm² at 2.05 V as well as breakdown strength is above 3.01 × 10⁵ V/cm.