Passive Q-switching performance of intracavity frequency-doubled red laser with mixed Nd:GdxY1−xVO4 crystals

Passive Q-switching laser operation of Nd:Gd_xY_1−xVO₄ mixed crystals at 671 nm has been compared in the same V-shape folded cavity. Based on our comparative analysis, the best laser characteristics - the highest pulse energy and peak power and the shortest pulse width - were demonstrated by Nd:Gd_0.63Y_0.37VO₄ crystal. At the same time, this crystal possesses the lowest thermal conductivity in comparison with the other Nd:Gd_xY_1−xVO₄ crystals, which could result in decreasing the average laser output power. To verify this assumption we also measured the focal lengths of thermal lens induced in the crystals during the laser operation.     

Optical spectroscopy of Ca3Gd2(BO3)4:Nd 3+ laser crystal

Ca₃Gd₂(BO₃)₄:Nd³⁺ crystals of high optical quality with a size up to 20?×?50?mm were grown by the Czochralski method. The absorption spectra of the crystal in three mutually perpendicular arbitrary directions were measured. Based on Judd–Ofelt and TPM methods, the intensity parameters Ω _t (t?=?2,?4,?6), the experimental and theoretical oscillator strengths, the radiative transition rates, radiative lifetime and fluorescent branching ratios of Nd³⁺ from ⁴F_3/2 to 4I_J, were obtained. The fluorescence spectrum and decay curve under excitation at 808?nm were also measured. The stimulated emission cross-section and radiative quantum efficiency were also calculated.     

Crystal growth and scintillation properties of Nd-doped Lu3Al5O12 single crystals with different Nd concentrations

Nd 0.1%, 0.5%, 1% and 3% doped Lu₃Al₅O₁₂ (Nd:LuAG) single crystals were grown in the nitrogen atmosphere by the micro-pulling down (μ-PD) method. The grown crystals had a single-phase confirmed by powder XRD analysis. In absorption spectra, some weak absorption lines due to Nd³⁺ 4f-4f transitions were observed and their intensity increased with the increase of Nd concentration. When excited by ²⁴¹Am α-ray, a broad emission peak due to defects in the host lattice at 320 nm and some sharp lines due to Nd³⁺ 4f-4f transitions at wavelength longer than 400 nm were observed. The decay time profiles of Nd:LuAG under γ-ray excitation were well approximated by two exponential function of 340-760 ns and 3-5 μs for each sample. By pulse height measurement using ¹³⁷Cs, Nd 0.5%:LuAG showed the highest light yield of 7600 ± 760 photons/MeV.     

Nd:GdxY1-xCa4O(BO3)3晶体的生长及其光谱性能研究

利用熔体提拉法生长了大尺寸,高质量的新型激光自倍频晶体Nd:GdxY1-x(Ca4O(BO3)3(简称Nd:GdYCOB),对Nd:GdYCOB晶体的XRD衍射图进行指标化,得到它的晶胞参数为a=8.080A;b=16.016A;c=3.538A,β＝101．18,μ＝491．1A3,对取自不同部位的晶体粉末进行ICP原子发射光 分析表明晶体整体组份均匀一致,根据熔体和晶体粉末的ICP数据计算,Nd:GdYCOB晶体中Nd3 的分凝系数为0．63,首次报道了Nd:GdYCOB晶体200－3000nm室温透过光谱和室温荧光光谱及荧光寿命,室温透过光谱表明Nd:GdYCOB晶体的紫外吸收边在－220nm,具有很宽的透光波段（－220－2700nm);Nd:GdYCOB晶体在800nm附近存在很强的吸收,适合于LD泵汪,为光光谱表明Nd:GdYCOB晶体是一种很有潜力的RGB（red,green,blue)激光自倍频晶体,掺杂4％,5％ Nd:GdYCOB晶体的荧光寿命分别为105us和100us。     

Cw and passively Q-switched laser performance of a mixed c-cut Nd:Gd0.33Lu0.33Y0.33VO4 crystal operating at 1.34 μm

Continuous wave and passively Q-switched laser operation with a mixed c-cut Nd:Gd_0.33Lu_0.33Y_0.33VO₄ crystal at 1.34 μm has been realized for the first time as far as we know. The largest output power of the continuous wave was 1.1 W for the output mirror of 5% transmission, with the optical conversion efficiency and the slope efficiency being 15% and 17.2%, respectively. The passive loss and the stimulated emission cross-section of the Nd:Gd_0.33Lu_0.33Y_0.33VO₄ crystal were found to be 0.6% and 0.47 × 10⁻¹⁹ cm². The thermal lens effect that weakened the laser performance has also been measured. For passively Q-switched operation, the shortest pulse duration of 26 ns, the highest peak power of 1.8 kW, along with the pulse energy as large as 47 μJ, were obtained using V:YAG as Q-switch. The experimental results have shown that the passively Q-switched Nd:Gd_0.33Lu_0.33Y_0.33VO₄ laser can generate pulses with larger pulse energy and higher peak power in comparison with the passively Q-switched Nd:GdYVO₄ lasers.     

Ca4REO(BO3)3 crystals for green and blue microchip laser generation: from crystal growth to laser and nonlinear optical properties

We have taken advantage of congruent melting behavior of the nonlinear rare-earth oxoborate Ca₄REO(BO₃)₃ family to perfect a process of collective fabrication of self-frequency doubling microchip laser based on Nd:GdCOB (Ca₄Gd_1−xNd_xO(BO₃)₃) crystals. The process goes from Czochralski boule to 1 × 3 mm² chips perfectly oriented (better than 0.1°) to the phase matching direction (θ=90°, φ=46°) in the XY principal plane, with dielectric mirrors directly deposited on both faces of the chips. 20 mW of self-frequency doubling output power at 530 nm was performed under 800 mW of diode laser as incident pump power at 812 nm. In addition, new compositions from the solid solution Ca₄Gd_1−xY_xO(BO₃)₃ (Gd_1−xY_xCOB) (x=0.13, 0.16, 0.44) have been grown by the Czochralski pulling method, in order to achieve noncritical phase matching (NCPM) second harmonic generation of ⁴F_3/2 → ⁴I_9/2 Nd³⁺ doped laser hosts. Three types of laser wavelengths have been chosen: Nd:YAP (YAlO₃) at 930 nm, Nd:YAG (Y₃Al₅O₁₂) at 946 nm, and Nd:ASL (Nd_ySr_1−x La_x−yMg_x Al_12−xO₁₉) at 900 nm. Angular acceptance measurements of these three types of compositions present very large values, compared to pure GdCOB or YCOB oriented in critical phase matching configurations.     

Crystal growth and spectroscopic studies of novel Yb-doped K5Nd(MoO4)4 single crystals

K₅Nd(MoO₄)₄ crystals with different Yb³⁺ concentrations were grown using Czochralski technique. Room-temperature absorption spectra were recorded and assigned on the basis of Dieke's diagram for Nd³⁺ ion; the standard Judd-Ofelt theory has been used to analyze the spectra. Increase of Yb³⁺ concentration leads to variation of the corresponding Judd-Ofelt intensity parameters. Significant contribution of the Yb↔Nd energy transfer into the formation of the Nd³⁺ absorption spectra causes the observed changes. After illumination of the crystals with CW Nd:YAG laser changes of the birefringence for the laser line of CW He-Ne laser at 633 nm were studied. Birefringence changes show good correlation with the content of Yb ions.     

Diode-end-pumped passively Q-switched 1.34 μm Nd:Gd0.5Y0.5VO4 laser with Co:LMA saturable absorber

In this paper, the output performances at 1.34 μm in continuous wave operation and passive Q-switching regime of a diode-end-pumped Nd:Gd_0.5Y_0.5VO₄ laser have been investigated. The passive Q-switching regime was achieved with Co²⁺:LaMgAl₁₁O₁₉ (Co²⁺:LMA) saturable absorbers crystals. A maximum average output power of 230 mW was recorded with a Co²⁺:LMA with initial transmission of 81%. The minimum pulse duration was 116 ns, which corresponded to a repetition rate of 360 kHz, the single pulse energy of 2.1 μJ and the pulse peak power of 5.5 W.     

Luminescence properties of Ca4Y6(SiO4)6O:RE (RE = Eu, Tb, Dy, Sm and Tm) under vacuum ultraviolet excitation

The vacuum ultraviolet excited luminescent properties of Eu³⁺, Tb³⁺, Dy³⁺, Sm³⁺ and Tm³⁺ in the matrices of Ca₄Y₆(SiO₄)₆O were investigated. The bands at about 173 nm in the vacuum ultraviolet excited spectra were attributed to host lattice absorption of the matrix Ca₄Y₆(SiO₄)₆O. For Eu³⁺-doped samples, the O²⁻ → Eu³⁺ CTB was identified at 258 nm. Typical 4f-5d absorption bands in the region of 195-300 nm were observed in Tb³⁺-doped samples. For Dy³⁺-doped and Sm³⁺-doped samples, the broad excitation bands consisted of host absorptions, CTB and f-d transition. For Tm³⁺-doped samples, the O²⁻ → Tm³⁺ CTB was located at 191 nm. About the color purity and emission intensity, Ca₄Y₆(SiO₄)₆O:Tb³⁺ is an attractive candidate of green light PDP phosphor, and Ca₄Y₆(SiO₄)₆O:Dy³⁺ has potential application in the field of mercury-free lamps.     

Crystal growth and optical properties of the Nd doped LuF3 single crystals

Thirty millimeter diameter single crystal of Nd³⁺ doped LuF₃ was grown using LiF as solvent. The single phase crystallization was confirmed by the powder X-ray diffraction, and high structural perfection was demonstrated by X-ray rocking curve (XRC) measurements. FWHM of XRC for 220 reflection was 32 arcsec. No remarkable absorption due to unfavorable impurities was observed from optical absorption measurements in the VUV spectral region. The crystal showed the VUV luminescence peaking around 178 nm that is consistent with the 4f²5d-4f³ transition of Nd³⁺ ion. The luminescence intensity of Nd:LuF₃ under X-ray irradiation was significantly higher than that of reported VUV scintillators such as Nd:LaF₃ or Nd:LiLuF₄.     

Up-conversion emission in KGd(WO4)2 single crystals triply-doped with Er/Yb/Tm, Tb/Yb/Tm and Pr/Yb/Tm ions

Triply-doped single crystals KGd(WO₄)₂:Er³⁺/Yb³⁺/Tm³⁺, KGd(WO₄)₂:Tb³⁺/Yb³⁺/Tm³⁺ and KGd(WO₄)₂:Pr³⁺/Yb³⁺/Tm³⁺ were grown by the Top Seeded Solution Growth (TSSG) method, with an aim of getting efficient up-converted multicolored luminescence, which subsequently can be used for generation of white light. Such an aim determined the choice of the triply doped compounds: excitation of the Yb³⁺ ions in the infrared spectral region is followed by red, green and blue emission from other dopants. It was shown that all these systems exhibit multicolor up-conversion fluorescence under 980 nm laser irradiation. Detailed spectroscopic studies of their absorption and luminescence spectra were performed. From the analysis of the dependence of the intensity of fluorescence on the excitation power the conclusion was made about significant role played by the host’s conduction band and other possible defects of the KGd(WO₄)₂ crystal lattice in the up-conversion processes.     

Sub-nanosecond Nd:Lu0.61Gd0.39VO4 microchip laser

We report the fabrication and operation of a single-to-three-mode, sub-nanosecond passively Q-switched Nd:Lu_0.61Gd_0.39VO₄/Cr⁴⁺:YAG microchip laser, which exhibits changes in mode structure with increasing incident pump power. The laser exhibits longitudinal mode oscillations with a partial transverse mode overlap. The shortest pulse duration, highest pulse energy and peak power observed are 646 ps, 8.7 μJ and 13.5 kW, respectively.     

Efficient Bi → Nd energy transfer in Gd2O3:Bi,Nd

Bi³⁺,Nd³⁺ co-doped Gd₂O₃ were prepared by solid state reaction and the optical properties were investigated. The results show that the near-infrared emission of Nd³⁺ ions is significantly enhanced by the introducing of Bi³⁺ in co-doped samples. An efficient energy transfer from Bi³⁺ to Nd³⁺ corresponds to the near-infrared emission enhancement. The energy transfer efficiency reaches 64.1% for the sample with the strongest near-infrared emission, which has the optimized doping concentrations of 0.5% for Bi³⁺ and 2% for Nd³⁺. The interesting optical properties make Bi³⁺,Nd³⁺ co-doped Gd₂O₃ promising as the luminescent down-conversion layers in front of c-Si solar cells to enhance the performance of the solar cells.     

Growth of Nd<Superscript>3+</Superscript> doped LiNbO<Subscript>3</Subscript> crystals using Bridgman method and its spectral properties

The growth of Nd³⁺ doped lithium niobate crystals using Bridgman method has been reported in this paper. By means of the optimum conditions such as proper feed materials, sealed platinum crucibles, growth rate of 1–1·5 mm/h and temperature gradient of 30–35°C/cm across the solid-liquid interface under the furnace temperature of 1300°C, single crystals containing Nd³⁺ ion with 0·54 mol% concentration were obtained. X-ray diffraction and ICP-AES were used to characterize the crystals and its composition. The absorption, emission and fluorescence lifetime are also measured. Based on the Judd-Ofelt theory, we obtained the optical parameters of the crystal such as the luminescent quantum efficiency, the radioactive lifetimes, the branching ratios and the emission cross-section.     

Shaped single crystal growth and scintillating application of Yb:(Gd,Lu)3(Ga,Al)5O12 solid solutions

Shaped single crystals of (Yb_0.05Lu_xGd_0.95−x)Ga₅O₁₂ (0.0x0.9) and Yb_0.15Gd_0.15Lu_2.7(Al_xGa_1−x)O₁₂ (0.0x1.0) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd,Lu)₃(Ga,Al)₅O₁₂ are formed. Measured optical absorption spectra of the samples show 4f–4f transitions related to Gd³⁺ ion at 275 and 310 nm, and also an onset of charge transfer transitions from oxygen ligands to Gd³⁺ or Yb³⁺ cations below 240 nm. A complete absence of Yb³⁺ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb³⁺ by that of Gd³⁺ ions. For specific composition of Lu_1.5Gd_1.5Ga₅O₁₂ an intense defect––host lattice-related emission, which achieve of about 40% integrated intensity compared with Bi₄Ge₃O₁₂, was found.     

Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2

High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO₄)₂ (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is σ_SE = 21.4 × 10⁻²⁰ cm² at 1067.3 nm, for light polarization E || N_m. The lifetime of the ⁴F_3/2 state of Nd³⁺ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ∼2.5 × 10⁻¹⁷ cm³/s. When cut along the N_g optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ∼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.     

Generation of annularly symmetric periodic ferroelectric domains in Nd doped near stoichiometric LiTaO3 crystals by the vapor transport equilibration processing

Annually symmetric periodic ferroelectric domain and near stoichiometry have been generated simultaneously from Nd-doped congruent LiTaO₃ crystals by using the vapor transport equilibration (VTE) processing for the first time. The periodic width in the domain structure of 0.5 mol% Nd doped stoichiometric LiTaO₃ crystal was found to be about 70 μm, and the wavelength decreased with the increasing Nd concentration. It can be noticed by transmission spectra that VTE treated LT crystals shows blue shift as compared to congruent LT crystals. Also, various absorption bands were observed in Nd-doped LiTaO₃ crystals corresponding to the transitions from ⁴I_9/2 ground state of Nd³⁺ ions, indicating its potential in the self-lasing quasi-phase matching (QPM) applications.     

Infrared spectroscopic characterization of Na5Lu9F32 single crystals doped with various Er3+ concentrations

This work reports on optical spectra of Na₅Lu₉F₃₂ single crystals doped with various Er³⁺ concentrations from 0.5 to 5 mol%. In our improved Bridgman method, the X-ray powder diffractions were investigated and optical parameters were also calculated by the Judd–Ofelt theory. Results showed that Er³⁺ ions entered the Lu³⁺ sites successfully without causing any obvious peak changes, and the doping concentration of Er³⁺ had important influence on the Er³⁺ local structure in Na₅Lu₉F₃₂ crystals. The maximum emission intensities of ~1.5 and ~2.7 μm were obtained in present research when the doping concentration of Er³⁺ were 4 and 5 mol%, respectively, under the excitation of 980 nm LD. In these doping concentration, the maximum emission cross-sections were calculated to be 1.37 × 10^?20 cm² (~1.5 μm) and 2.1 × 10^?20 cm² (~2.7 μm). The gain cross-section at 2.7 μm was also estimated according to the absorption and emission cross section spectra. All these spectroscopic characterizations suggested that this fluoride crystal would possess promising applications in infrared lasers.     

Tuning the luminescence color and enhancement of afterglow properties of Sr(4−x−y)CaxBayAl14O25:Eu,Dy phosphor by adjusting the composition

Color point tuning is an important challenge for improving the practical applications of various displays, especially there are very limited white color single hosts that emits in the white spectrum. In this paper, the possibility of color tuning by substituting part of host lattice cation (Sr²⁺ ions) by Ca²⁺ or Ba²⁺ ions in an efficient strontium aluminate phosphor, Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺, is reported and found to be very promising for displays. A detail study by replacing part of Sr²⁺ with Ca²⁺ or Ba²⁺ has been investigated. X-ray diffraction study showed that crystal structure of Sr₄Al₁₄O₂₅ is preserved up to 20 mol of Ca²⁺ ion exchange while it is limited to 10 mol of Ba²⁺ ions exchange. Substantial shift in the emission band and color were observed by substitution of Sr²⁺ by Ca²⁺ or Ba²⁺ ions. A bluish-white emission and afterglow was observed at higher Ca²⁺ ions substitution. Further, partial Ca²⁺ substitutions (up to 0.8 mol) resulted in enhanced afterglow of Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ phosphor. However, Ba²⁺ substitution decreased the fluorescence as well afterglow of the Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ phosphor significantly. The enhanced phosphorescence by partial Ca²⁺ substitution is explained on the basis of increased density of shallow traps associated with higher solubility of Dy³⁺ ions in to the host lattice due to equivalent size of Ca²⁺ and Dy³⁺ ions. Thus, Ca²⁺ substitution in the Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ phosphor is a promising method for tuning the emission color and improving the afterglow intensity of the phosphor.     

Electron paramagnetic resonance study of rare-earth related centres in K2YF5:Tb thermoluminescence phosphors

Rare-earth related centres have been investigated in K₂YF₅:Tb³⁺ crystals, exhibiting thermoluminescence (TL) below and above room temperature (RT), using electron paramagnetic resonance (EPR) spectroscopy at Q (34 GHz) and W-band (94 GHz). The spectra have been studied prior to irradiation, after exposure in the kGy range to X-rays at 77 K and subsequent pulse annealing up to 570 K. In addition to Gd³⁺, previously studied in detail, we identified Er³⁺ and Yb³⁺ centres as accidental impurities in as-grown crystals and determined their effective g tensors. The EPR spectra of irradiated and annealed crystals provide evidence for the production of at least three distinct Tb-related trapped hole centres, two of which could definitely be identified as Tb⁴⁺. Hence, we prove that the Tb³⁺ activator ions also act as hole traps in K₂YF₅. Pulse annealing experiments indicate that the TL above RT results from thermal release of electrons, recombining at these Tb⁴⁺ ions.