Densification and properties of barium zirconate ceramics by addition of P2O5

The influences of P₂O₅ doping on the sintering behavior, phase formation and properties of barium zirconate ceramics were investigated. Unmodified BaZrO₃ was difficult to densify, even at 1600 °C. Only a porous microstructure could be obtained. However, doping BaZrO₃ with P₂O₅ markedly enhances its sinterability. 94.2% of theoretical density was achieved with the inclusion of 4 mol% P₂O₅ sintered at 1600 °C for 4 h. The bending strength of the samples sintered at 1600 °C for 4 h was improved by almost 8 times by the addition of 4 mol% P₂O₅. The average bending strength of 152.3 ± 16.7 MPa was obtained. The Vickers hardness of 4 mol% P₂O₅ modified BaZrO₃ reaches 8.8 ± 0.4 GPa.     

Effect of sintering temperature on microstructure and electrical properties of ZVMCDN ceramics

The microstructure and electrical properties of ZnO-V₂O₅-MnO₂-Co₃O₄-Dy₂O₃-Nb₂O₅ (ZVMCDN) ceramics were investigated in accordance with sintering temperature (850-950 °C). The microstructure of the samples consisted of mainly ZnO grain as a main phase, and Zn₃(VO₄)₂, ZnV₂O₄, and DyVO₄ as the minor secondary phases. The sintered density decreased from 5.69 to 5.52 g/cm³ due to the volatility of V₂O₅ in accordance with increasing sintering temperature. The maximum nonlinear coefficient (57) was obtained at 925 °C. The donor concentration increased from 1.15 × 10¹⁸/cm³ to 11.1 × 10¹⁸/cm³ in accordance with increasing sintering temperature and the barrier height exhibited the maximum value (1.03 eV) at 925 °C.     

Structural and electrical properties of sputtered indium-zinc oxide thin films

In this study, indium-zinc oxide (IZO) thin films have been prepared at a room temperature, 200 and 300 °C by radio frequency magnetron sputtering from a In₂O₃-12 wt.% ZnO sintered ceramic target, and their dependence of electrical and structural properties on the oxygen content in sputter gas, the substrate temperature and the post-heat treatment was investigated. X-ray diffraction measurements showed that amorphous IZO films were formed at room temperature (RT) regardless of oxygen content in sputter gas, and micro-crystalline and In₂O₃-oriented crystalline films were obtained at 200 and 300 °C, respectively. From the analysis on the electrical and the structural properties of annealed IZO films under Ar atmosphere at 200, 300, 400 and 500 °C, it was shown that oxygen content in sputter gas is a critical parameter that determines the local structure of amorphous IZO film, stability of amorphous phase as well as its eventual crystalline structure, which again decide the electrical properties of the IZO films. As-prepared amorphous IZO film deposited at RT gave specific resistivity as low as 4.48 × 10^− 4 Ω cm, and the highest mobility value amounting to 47 cm²/V s was obtained from amorphous IZO film which was deposited in 0.5% oxygen content in sputter gas and subsequently annealed at 400 °C in Ar atmosphere.     

Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor

We report on the dielectric properties and leakage current characteristics of 3 mol% Mn-doped Ba_0.6Sr_0.4TiO₃ (BST) thin films post-annealed up to 600 °C following room temperature deposition. The suitability of 3 mol% Mn-doped BST films as gate insulators for low voltage ZnO thin film transistors (TFTs) is investigated. The dielectric constant of 3 mol% Mn-doped BST films increased from 24 at in-situ deposition up to 260 at an annealing temperature of 600 °C due to increased crystallinity and the formation of perovskite phase. The measured leakage current density of 3 mol% Mn-doped BST films remained on the order of 5 × 10^− 9 to 10^− 8 A/cm² without further reduction as the annealing temperature increased, thereby demonstrating significant improvement in the leakage current characteristics of in-situ grown Mn-doped BST films as compared to that (5 × 10^− 4 A/cm² at 5 V) of pure BST films. All room temperature processed ZnO-TFTs using a 3 mol% Mn-doped BST gate insulator exhibited a field effect mobility of 1.0 cm²/Vs and low voltage device performance of less than 7 V.     

Preparation and characterization of Y2O3–Sm2O3 co-doped ceria electrolyte for IT-SOFCs

Y₂O₃–Sm₂O₃ co-doped ceria (YSDC) powder was synthesized by a gel-casting method using Ce(NO₃)₃·6H₂O, Sm₂O₃ and Y₂O₃ as raw materials. Phase structure of the synthesized powders was characterized by X-Ray diffraction analysis. Sinterability of the powders was investigated by testing the relative density and observing the microstructure of the sintered YSDC samples. Electrical conductivity of the sintered YSDC samples was measured using impedance spectra method. Single solid oxide fuel cells based on the YSDC electrolyte were also assembled and tested. The results showed that YSDC powders with single-phase fluorite structure can be obtained by calcining the dried gelcasts at temperature above 800 °C. Average particle size of the YSDC powder is 50–100 nm. Relative density of more than 95% of the theoretical can be achieved by sintering the YSDC compacts at temperature above 1400 °C. The sintered YSDC sample has an ionic conductivity of 4.74 × 10⁻² S cm⁻¹ at 800 °C in air. Single fuel cells based on the YSDC electrolyte with 50 μm in thickness were tested using humidified hydrogen as fuel and air as oxidant, and maximum power densities of about 190 and 112 mW cm⁻² were achieved at 700 and 600 °C, respectively.     

Ceramic system based on ZnO-CuO-glass

Mixtures of powders containing ZnO, (CH₃COO)₂Cu·H₂O and glass frit were obtained by freeze-drying with compositions of 99 wt.% [(100 − x) mol% ZnO + x mol% Cu²⁺ (x = 0.05, 0.5, 5.0)] + 1 wt.% G, where G is a glass powder containing 26% SiO₂, 62% PbO, 7% B₂O₃, 5% ZnO in weight. Pellets were sintered in air at 950 °C/1 h. Ceramic system based on ZnO-CuO-glass originated during heating above 425 °C. Liquid-phase sintering occurred above 850 °C. Results showed that the breakdown electric field, the nonlinearity coefficient (α), average grain size and grain boundary voltage increased; at the same time that the leakage current decreased, densification was enhanced as the Cu-contents increased from 0.05 to 5. An excess Cu-containing segregate phase was observed in ceramics containing 5.0 mol% Cu²⁺. Samples presented densities above 95% of the theoretical density of ZnO and α > 200.     

Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5 and Nb2O5 films

Tantalum and niobium oxide optical thin films were prepared at room temperature by plasma-enhanced chemical vapor deposition using tantalum and niobium pentaethoxide (M(OC₂H₅)₅) precursors. We studied the evolution of their optical and microstructural properties as a result of annealing over a broad temperature range from room temperature up to 900 °C. The as-deposited films were amorphous; their refractive index, n, and extinction coefficient, k, at 550 nm were n = 2.13 and k < 10^− 4 for Ta₂O₅, and n = 2.24 and k < 10^− 4 for Nb₂O₅. The films contained a small amount of residual carbon (∼ 2-6 at.%) bonded mostly to oxygen. During annealing, the onset of crystallization was observed at approximately T_C1 = 650 °C for Ta₂O₅ and at T_C1 = 450 °C for Nb₂O₅. Upon annealing close to T₁ (300 °C for Nb₂O₅ and 400 °C for Ta₂O₅), n at 550 nm decreased by less than 1%. This was correlated with the decrease of carbon content, as suggested by Fourier transform infrared spectroscopy, elastic recoil detection and static secondary ion mass spectroscopy (SIMS) results. During annealing, we observed phase transition from the δ- (hexagonal) phase to the L- (orthorhombic) phase between 800 °C and 900 °C for Ta₂O₅, and between 600 °C and 700 °C for Nb₂O₅. The structural changes were also marked by silicon diffusion from the substrate into the oxide layer at annealing temperatures above 500 °C for Ta₂O₅ and above 400 °C for Nb₂O₅. As a consequence of oxygen, silicon and metal interdiffusion, the interface between the Si substrate and the metal oxide (Ta₂O₅ or Nb₂O₅) is characterized by its broadening, well documented by spectroscopic ellipsometry and SIMS data.     

Preparation of ultra-fine cobalt-nickel manganite powders and ceramics derived from mixed oxalate

Co_0.30Ni_0.66Mn_2.04O₄ negative temperature coefficient ceramics were derived from mixed oxalate Co_0.30Ni_0.66Mn_2.04(C₂O₄)₃·nH₂O. The mixed oxalate was synthesized by milling a mixture of cobalt acetate, nickel acetate, manganese acetate, and oxalic acid at room temperature. An ultra-fine Co_0.30Ni_0.66Mn_2.04O₄ powder was obtained by calcining the mixed oxalate in air at 800 °C for 3 h. The oxide powder compact was sintered at a relatively low temperature of 1100 °C for 5 h, achieving a relative density of ∼98%. The specific resistivity ρ_25 °C and the thermal constant B_25/85 °C were 765.2 Ω cm and 3604 K, respectively. The resistance drift after aging at 150 °C for 500 h was 1.5%.     

Fabrication of LiNi0.5 + δMn0.5 − δO2 nanofibers by electrospinning

Polycrystalline tetranary LiNi_0.5 + δMn_0.5 − δO₂ nanofibers have been successfully fabricated by a sol-gel assisted electrospinning technique. The structures and properties of fabricated nanofibers were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and thermal gravimetric analysis (TGA). After heat treatment of the electrospun fibers at a temperature of 800 °C, the LiNi_0.5 + δMn_0.5 − δO₂ phase was found without other trace phases. Multilayered nanoparticles with a grain size of 50 nm or less within a single fiber are notable from TEM. In this study, it was shown that the sol-gel assisted electrospun LiNi_0.5 + δMn_0.5 − δO₂ fibers could be formed with the α-NaFeO₂ type crystal structure at a temperature lower than that in a typical solid-state or sole sol-gel process and possess good thermal stability as high as 800 °C.     

Synthesis of BaTi4O9 ceramics by reaction-sintering process

Synthesis of BaTi₄O₉ ceramics by a reaction-sintering process was investigated. The mixture of raw materials for stoichiometric BaTi₄O₉ were pressed and sintered into ceramics without any calcination stage involved. Pure BaTi₄O₉ phases were obtained at 1150-1280 °C. High-sintered density, 98.2-99.5% of theoretical value (4.533 g/cm³), can be obtained for pellets sintered at 1200-1280 °C for 2-6 h. Some rod-shaped grains 3-7 μm in the longitudinal axis appear in pellets sintered at 1230 °C. Both the size and the amount of these rod-shaped grains increase at higher sintering temperature.     

The effect of manganese oxide on the sinterability of hydroxyapatite

The sinterability of manganese oxide (MnO₂) doped hydroxyapatite (HA) ranging from 0.05 to 1 wt% was investigated. Green samples were prepared and sintered in air at temperatures ranging from 1000 to 1400 °C. Sintered bodies were characterized to determine the phase stability, grain size, bulk density, hardness, fracture toughness and Young's modulus. XRD analysis revealed that the HA phase stability was not disrupted throughout the sintering regime employed. In general, samples containing less than 0.5 wt% MnO₂ and when sintered at lower temperatures exhibited higher mechanical properties than the undoped HA. The study revealed that all the MnO₂-doped HA achieved >99% relative density when sintered at 1100-1250 °C as compared to the undoped HA which could only attained highest value of 98.9% at 1150 °C. The addition of 0.05 wt% MnO₂ was found to be most beneficial as the samples exhibited the highest hardness of 7.58 GPa and fracture toughness of 1.65 MPam^1/2 as compared to 5.72 GPa and 1.22 MPam^1/2 for the undoped HA when sintered at 1000 °C. Additionally, it was found that the MnO₂-doped samples attained E values above 110 GPa when sintered at temperature as low as 1000 °C if compared to 1050 °C for the undoped HA.     

Microstructure and thermal properties of dysprosium and thulium co-doped barium titanate ceramics for high performance multilayer ceramic capacitors

The co-doping characteristics on microstructure and thermal properties of barium titanate (BaTiO₃) were investigated to elucidate formation of core-shell structure by dysprosium (Dy) and thulium (Tm) addition in the BaTiO₃-Dy₂O₃-Tm₂O₃ system. The dielectrics co-doped with 0.7 mol% Dy₂O₃ and 0.3 mol% Tm₂O₃ had the dielectric constant up to 2200 as a function of temperature, which was 30% higher than that of specimen containing only Tm₂O₃ at the room temperature. It could be explained by the fact that the increase of Dy₂O₃ addition contributed to the improvement of dielectric constant. On the other hand, the rapid diffusion rate of Dy³⁺ ions in BaTiO₃ showed an adverse effect on temperature stability caused by destruction of core-shell. As the compensation for shell expansion in BaTiO₃, the reinforcement of the core-shell structure through the addition of Tm₂O₃ was confirmed by TEM-EDS analysis and attributed the temperature coefficient of capacitance (TCC) in a reliability condition (−55 °C to 125 °C, △C = ±15% or less). The enhanced electrical properties and temperature stability could be deduced from the generation of electrons and the formation core-shell structure in co-doped BaTiO₃ system respectively.     

Preparation and characterization of La0.9Sr0.1Ga0.8Mg0.2O3−δ thin film electrolyte deposited by RF magnetron sputtering on the porous anode support for IT-SOFC

Thin films of solid electrolyte La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−δ (LSGM) were deposited by RF magnetron sputtering onto porous La_0.7Sr_0.3Cr_0.5Mn_0.5O_3−δ (LSCM) anode substrates. The effects of substrate temperature, sputtering power density and sputtering Ar gas pressure on the LSGM thin film density, flatness and morphology were systematically investigated. RF sputtering power density of 7.8 W cm⁻², substrate temperature of 300 °C and sputtering Ar gas pressure of 5 Pa are identified as the best technical parameters. In addition, a three-electrode half cell configuration was selected to investigate the electrochemical performance of the thin film. The LSGM film deposited at optimum conditions exhibited a lower area specific ohmic resistance of 0.68 Ω cm⁻² at 800 °C, showing that the practicability of RF magnetron sputtering method to fabricate LSGM electrolyte thin film on porous LSCM anode substrates.     

Temperature dependence of the microstructure and resistivity of indium zinc oxide films deposited by direct current magnetron reactive sputtering

Indium zinc oxide (IZO) films were deposited as a function of the deposition temperature using a sintered indium zinc oxide target (In₂O₃:ZnO = 90:10 wt.%) by direct current (DC) magnetron reactive sputtering method. The influence of the substrate temperature on the microstructure, surface roughness and electrical properties was studied. With increasing the temperature up to 200 °C, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about 3.4 × 10^− 4 Ω cm. Change of structural properties according to the deposition temperature was also observed with X-ray diffraction patterns, transmission electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. IZO films deposited above 300 °C showed polycrystalline phases evolved on the amorphous IZO layer. Very flat surface roughness could be obtained at lower than 200 °C of the substrate temperature, while surface roughness of the films was increased due to the formation of grains over 300 °C. Consequently, high quality IZO films could be prepared by DC magnetron sputtering with O₂/Ar of 0.03 and deposition temperature in range of 150-200 °C; a specific resistivity of 3.4 × 10^− 4 Ω cm, and the values of peak to valley roughness and root-mean-square roughness are less than 4 nm and 0.5 nm, respectively.     

Effect of the sintering temperature on the properties of Ce0.85La0.10Ca0.05O2−δ electrolyte material

Rare earth and alkaline earth co-doped Ce_0.85La_0.10Ca_0.05O_2−δ electrolyte material with the powder obtained by solid-state reaction method was sintered at 1300, 1400, 1500 and 1600 °C respectively. The results showed that the ionic conductivity of the sample sintered at 1400 °C was slightly lower compared to that sintered at 1500 °C in the temperature range of 300-550 °C, while the sample sintered at 1400 °C showed the highest ionic conductivity in all the samples above 550 °C. The ionic conductivity of ∼0.021 S/cm at 600 °C and the relative density of 98.2% were observed for the sample sintered at 1400 °C. In addition, the highest flexural strength with 145 MPa was also obtained for the sample sintered at 1400 °C. It suggested that the sintering temperature for Ce_0.85La_0.10Ca_0.05O_2−δ electrolyte may be reduced to as low as 1400 °C with desired properties.     

Microwave dielectric properties and microstructures of the 11Li2O-3Nb2O5-12TiO2 ceramics with B2O3 addition

The effects of B₂O₃ addition, as a sintering agent, on the sintering behavior, microstructure and microwave dielectric properties of the 11Li₂O-3Nb₂O₅-12TiO₂ (LNT) ceramics have been investigated. With the low-level doping of B₂O₃ (≤2 wt.%), the sintering temperature of the LNT ceramic could be effectively reduced to 900 °C. The B₂O₃-doped LNT ceramics are also composed of Li₂TiO₃ss and “M-phase” phases. No other phase could be observed in the 0.5-2 wt.% B₂O₃-doped ceramics sintered at 840-920 °C. The addition of B₂O₃ induced no obvious degradation in the microwave dielectric properties but increased the τ_f values. Typically, the 0.5 wt.% B₂O₃-doped ceramics sintered at 900 °C have better microwave dielectric properties of ?_r = 49.2, Q × f = 8839 GHz, τ_f = 57.6 ppm/°C, which suggest that the ceramics could be applied in multilayer microwave devices requiring low sintering temperatures.     

Microstructure and electrical properties of Sm2O3 doped Bi2O3-based ZnO varistor ceramics

The dependence of the bulk density, microstructure and dc electrical properties of bismuth oxide (Bi₂O₃)-based zinc oxide (ZnO) varistor ceramics for various samarium oxide (Sm₂O₃) contents was investigated. The value of bulk density was found to 5.43-5.50 g cm⁻³ with Sm₂O₃ (mol%) content. The maximum value of bulk density is observed to be 5.50 for 0.30 mol% Sm₂O₃ containing varistor ceramics. The grain sizes for all the samples calculated from the scanning electron micrographs were found to decrease as Sm₂O₃ increases. The presence of ZnO phases, Bi-rich phases, spinel phases and Sm₂O₃ phases were observed in the samples by the energy dispersive X-ray analysis and X-ray diffraction analysis. As the Sm₂O₃ amount increased in the Bi₂O₃-based ZnO varistor ceramics, the nonlinear coefficient, α increased up to 0.10 mol%, reaching a maximum value of 58 and then decreased. The breakdown electric field, E_b, increased with the increase of Sm₂O₃ content with a maximum value of 3220 V cm⁻¹ for the 0.75 mol% Sm₂O₃ doped ZnO varistor ceramics. The leakage current, I_L, showed a minimum value of 1.10 μA for the composition of 0.30 mol% Sm₂O₃ doped Bi₂O₃-based ZnO varistor ceramics. The 0.30 mol% Sm₂O₃-doped Bi₂O₃-based ZnO varistor ceramics sintered at 1200 °C exhibited a good stability for dc accelerated aging stress of 0.90 V_1 mA/90 °C/12 h.     

Ln2Mo3O12 (Ln = La, Nd): A novel group of low loss microwave dielectric ceramics with low sintering temperature

Ln₂Mo₃O₁₂ (Ln = La, Nd) ceramics with a defect scheelite related structure were prepared via a solid state reaction method. The La₂Mo₃O₁₂ ceramics sintered at 930 °C for 2 h exhibited a low dielectric permittivity of 10.1, a high quality factor (Qf value) of 60,000 GHz and a temperature coefficient of −80 ppm/°C at 12.7 GHz. The Nd₂Mo₃O₁₂ ceramics sintered at 945 °C for 2 h possessed a dielectric permittivity of 8.2, a Qf value of 80,000 GHz, and a temperature coefficient of −60 ppm/°C at 15.8 GHz. This group of ceramics could be good candidates for microwave substrate applications.     

Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

We report on preparation and properties of anatase Nb-doped TiO₂ transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti_0.96Nb_0.04O₂ films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (ρ) of the films. We attained ρ = 9.2 × 10^− 4 Ω cm and transmittance of ~ 70% in the visible region on glass by annealing at 300 °C in vacuum. The minimum ρ of 7.0 × 10^− 4 Ω cm was obtained by 400 °C annealing in pure H₂.     

Preparation and studies of Eu and Tb co-doped Gd2O3 and Y2O3 sol-gel scintillating films

Eu³⁺ (2.5 at.%) and Tb³⁺ (0.005-0.01 at.%) co-doped gadolinium and yttrium oxide (Gd₂O₃ and Y₂O₃) powders and films have been prepared using the sol-gel process. High density and optical quality thin films were prepared with the dip-coating technique. Gadolinium (III) 2,4-pentadionate and yttrium (III) 2,4-pentadionate were used as precursors, and europium and terbium in their nitrate forms were used as doping agents. Chemical and structural analyses (infrared spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy) were conducted on both sol-gel precursor powders and dip-coated films. The morphology of thin films heat-treated at 700 °C was studied by means of atomic force microscopy. It was shown that the highly dense and very smooth films had a root mean roughness (RMS) of 2 nm ± 0.2 (A = 0.0075 Tb³⁺) and 24 nm ± 3.0 (B = 0.01 Tb³⁺). After treatment at 700 °C, the crystallized films were in the cubic phase and presented a polycrystalline structure made up of randomly oriented crystallites with grain sizes varying from 20 to 60 nm. The X-ray induced emission spectra of Eu³⁺- and Tb³⁺-doped Gd₂O₃ and Y₂O₃ powders showed that Tb³⁺ contents of 0.005, 0.0075 and 0.01 at.% affected their optical properties. Lower Tb³⁺ concentrations (down to 0.005 at.%) in both systems enhanced the light yield.