Young's Modulus Measurement of Thin Films by Resonant Frequency Method Using Magnetostrictive Resonator

At present, there are many methods about Young's modulus measurement of thin films, but so far there is no recognized simple, non-destructive and cheaper standard measurement method. Considering thin films with various thicknesses were sputter deposited on the magnetostrictive resonator and monitoring the resonator's first-order longitudinal resonant frequency shift both before and after deposition induced by external magnetic field, an Young's modulus assessing method based on classical laminated plate theory is presented in this paper. Using the measured natural frequencies of Au, Cu, Cr, Al and SiC materials with various thicknesses in the literature, the Young's modulus of the five materials with various thicknesses are calculated by the method in this paper. In comparison with the Young's modulus calculated by the other methods, it is found that the calculated Young's modulus for various thicknesses are in good agreement with the Young's modulus values in the literature. Considering the simple and non-destructive characteristics of this method, which can effectively describe the effect of the thickness on the Young's modulus, it has the potential to become a standard assessing method of thin film Young's modulus.     

金属间化合物Ni3Al薄膜的制备及性能研究

采用直流磁控共溅射法,在衬底温度为450℃的SiO2基体上制备了厚度为500nm的Ni3Al薄膜,X射线衍射(XRD)和透射电子显微镜(TEM)等测试表明,薄膜为(111)取向的L12型晶体结构金属间化合物。采用纳米压痕方法测试了薄膜的力学性能,其硬度为8.00GPa,弹性模量为200GPa。为克服亚微米级薄膜氧化增重难以测量的困难,采用四探针测试金属薄膜电阻的方法,间接给出了薄膜的腐蚀性能和高温氧化程度。结果表明Ni3Al金属间化合物薄膜的氧化速率为2.28×10-13g2/(cm4.s),薄膜具有良好的高温抗氧化性能。     

UV-LIGA镍薄膜材料的力学性能测试与分析

利用LIGA或UV-LIGA技术制备的镍,特别适合作为微器件的结构材料。材料的力学性能在微器件的仿真设计和实际使用中起到重要作用。主要利用常规的力学试验机和自行搭建的微拉伸平台,通过单轴拉伸方法测试了电流密度为20mA/cm2的UV-LIGA镍薄膜的力学性能。3种测试方法的结果呈现了一致的规律性变化——弹性模量显著降低,强度显著提高,表明UV-LIGA镍具有与块体镍显著不同的力学性能。通过X射线衍射分析(XRD),测量了该电流密度下试样的择优取向和晶粒尺寸,通过场发射扫描电镜(SEM)观察了试样的表面形貌和拉伸断口,并初步地分析了UV-LIGA镍力学性能的变化原因。该测试结果为微器件的仿真设计提供了重要的参考依据。     

磁控溅射制备镍薄膜热阻温度传感器工艺研究

利用镍薄膜的温度电阻特性以及磁控溅射镀膜技术设计并制备了薄膜热阻型温度传感器，为了达到较好的工作稳定性，设计了多层的复合膜系。文中分析了沉积薄膜的工作压力、电源功率、靶基距、退火温度、退火时间等制备工艺参数对热阻薄膜特性的影响，以及工艺参数对所沉积的镍薄膜的膜厚均匀度和温度电阻曲线，温度电阻系数等传感特性的影响。通过调整实验的工艺参数，最终得到电阻温度性能较好的镍薄膜温度传感器。测试结果表明薄膜传感器在0-250℃之间温度电阻曲线有较好的线性度和稳定性。     

Electrical characteristics of poly(3-hexylthiophene) organic thin film transistor with electroplated metal gate electrodes on polyimide

The electroplating of the gate electrode on a flexible polyimide (PI) substrate was successfully applied to the fabrication of inverted-staggered poly(3-hexylthiophene) (P3HT) organic thin film transistors (OTFTs). The Ni gate electrode was electroplated through patterned negative photo-resist (KMPR) masks onto Cu (seed)/Cr (adhesion) layers that had been sputter-deposited on O₂-plasma-treated PI substrates. The electrical measurements of the fabricated OTFTs with the SiO₂ gate insulator indicated non-ideal output characteristics, which are similar to the model of electrical transport by a space-charge limited current (SCLC). The use of a poly(4-vinyl phenol) (PVP) and SiO₂/PVP bilayer gate dielectric produced output characteristics that were closer to the ideal TFT behavior but led to a lower effective mobility and on/off current (I_on/I_off).     

Nanomechanical properties of polymer thin films measured by force-distance curves

Force-displacement curves have been acquired with a commercial atomic force microscope on thin films of poly(n-butyl methacrylate) on glass substrates. Different film thicknesses, from 10 up to 430 nm, were chosen to examine in detail the so called “mechanical double-layer” topic, i.e., the influence of the substrate on the determination of the mechanical properties of thin films. Taking advantage of the Hertz theory we calculated for all films the contact radius between tip and sample as a function of the applied load. Further Young's modulus of the samples was derived from the experimental data as a function of the applied load and, alternatively, of the deformation. The results of this analysis for 10 different film thicknesses were fitted with several half empirical equations proposed by several researchers. The focus of this work is to evaluate such existing half empirical theories for mechanical double-layers and to show the need for an alternative consistent approach.     

磁控共溅射Ni3 Al合金薄膜的微观结构及电阻特性

研究了室温下采用直流磁控共溅射法在抛光玻璃和Si基底上沉积Ni3Al合金薄膜的制备工艺、微观结构和电阻特性.采用SEM、EDX、AFM、TEM等测试分析了不同基底、溅射功率、工作气压等因素对薄膜微观结构、成分比和电阻特性的影响.结果表明:采用大功率混合溅射可以得到多晶态Ni3Al纳米合金薄膜,且呈多层岛状生长.所得薄膜具有良好的导电性,与玻璃相比,在Si基底上的薄膜表面光滑平整,晶粒更小,电阻率略大.然而随着厚度的减小,薄膜的电阻率增加迅速,发生金属向绝缘体过渡的相变,而厚度较大时这种现象不明显,这表明Ni3Al薄膜相变与厚度及晶格中氧含量有关.     

Ni/Zr-Co-Re堆栈层薄膜吸气剂的吸气性能及Ni作用机理研究

采用磁控溅射的方法制备了带有Ni保护层和Zr-Co-Re(Re代表稀土元素)主体层的堆栈层薄膜吸气剂。通过X射线光电子能谱仪(XPS)分析了薄膜吸气剂内部O元素的含量分布,研究了薄膜吸气剂中Ni层的防氧化作用和机理。研究表明:(1)Ni/Zr-CoRe堆栈层薄膜吸气剂在160℃保温3h的条件下可以有效激活,并具有高于Zr-Co-Ni单层薄膜吸气剂的吸气性能;(2)Ni保护层降低了吸气剂的被氧化程度,促进了表面吸附的H2分子的解离和扩散。     

Inkjet printing of conductive Ag lines and their electrical and mechanical characterization

This paper aims to investigate the effects of the substrate, the printed line thickness and the sintering temperature on the electrical resistivity, Young's modulus and hardness of inkjet-printed Ag thin films. Electrical resistivity was determined from the four-point method and Young's modulus and hardness were evaluated from nanoindentation test. Several models for evaluating Young's modulus and hardness were used and compared to account for the influence of substrates. It is noted that Ag lines on glass have higher resistance and resistivity than those on polyimide (PI) since Ag lines on glass and PI have tensile and compressive residual thermal stresses, respectively, due to the difference of coefficient of thermal expansion between Ag lines and substrates. Young's modulus of Ag films on glass can be predicted by the modified King and Bec models considering the substrate effect, but these models offer unstable results for Ag films on PI. Young's modulus and hardness of Ag films increase with the sintering temperature, and they are little affected by the film thickness when fully sintered.     

类金刚石薄膜残余应力的研究进展

类金刚石薄膜由于存在很大的残余应力,在实际应用中薄膜易产生裂纹、破裂甚至脱落。这些问题导致类金刚石薄膜在使用过程中过早失效。因此,缓解残余应力是类金刚石薄膜急需解决的问题和实际应用的需要。介绍了类金刚石薄膜残余应力的产生,对国内外调控残余应力的途径以及研究进展进行综述。使用有限元分析法模拟薄膜的残余应力可为类金刚石薄膜的制备和工艺设计提供参考。     

基片表面粗糙度对坡莫合金AMR以及磁性能的影响

利用霍尔离子源轰击Si基片获得了不同表面粗糙度的基片,然后利用磁控溅射方法制备了一系列Ta(5nm)/Ni 80Fe 20(12nm)/Ta(2nm)薄膜样品,重点研究了基片表面粗糙度对薄膜结构和各向异性磁阻效应的影响。采用AFM测量基片的表面粗糙度,采用四探针法测量薄膜的各向异性磁阻效应。研究结果表明,随着基片表面粗糙度的增加,坡莫合金的AMR值显著降低,且ΔH显著增加。     

薄膜生长的计算机模拟

薄膜技术在现代科技领域中有着广泛的应用。人们对薄膜的生长过程通过理论和实验进行了深入的研究，其中计算机模拟是重要的方法，本文概述了对薄膜生长过程的实验观察结果及其理论分析，主要讨论了薄膜生长的计算机模拟中经常采用的方法-蒙特卡罗法和分子动力学方法、描述衬底上成膜粒子运动的一些模型以及在计算机模拟中需注意的一些问题，其中主要包括粒子间的相互作用，入射粒子的能量和粒子上的衬底上的扩散运动。     

Determination of mechanical properties of thermally grown oxide on Fecralloy by nano-indentation

Nano-indentation was used to measure the mechanical properties of the thermally grown oxide (TGO) on a Fecralloy substrate. Due to the influence both of the substrate and the indenter size effect (ISE), the measured hardness and Young's modulus of the TGO system decreased with increasing indentation depth. Models were proposed to determine the mechanical properties of the TGO with consideration of both the substrate effect and the ISE. In addition, the ratio of hardness to Young's modulus (H/E) can be related to the ratio of irreversible work to total work (W_ir/W_t) during the indentation process.     

Electrical properties of electroplated Cu(Ag) thin films

To increase the electromigration resistance of copper interconnects copper alloy systems are of interest. In the present paper electrical properties of Cu(Ag) films will be discussed with respect to heat treatment and in comparison to copper and other alloy systems. The investigations show that the electrical resistivity of Cu(Ag) films is very low in comparison to other copper alloy systems. Up to an alloy content of about 2 at.% Ag the International Technology Roadmap for Semiconductors criterion of 2.2 μΩcm (scattering by geometrical constraints neglected) can be fulfilled after heat treatment. The various components of the electrical resistivity will be discussed in detail. The investigations show that grain growth and the redistribution of silver and impurities dominate the electrical resistivity evolution.     

Ni-P底层对化学镀Co-P薄膜性能的影响

采用化学镀工艺制备了Co-P磁记录薄膜,研究了非晶无磁Ni-P底层对Co-P薄膜的生长及性能的影响.研究结果表明:非晶无磁Ni-P底层对Co-P薄膜的晶体结构及取向无明显影响,镀态的Co-P薄膜均为密排六方结构, (100)、(002)、(101)的择优取向无明显变化;但非晶无磁的Ni-P底层可以提高薄膜的均匀性和一致性,表面无明显缺陷;细化晶粒,平均晶粒尺寸为100～150nm;提高Co-P薄膜的磁性能,矫顽力可达4.54×104A/m.当记录信号脉冲时,与铝基体上直接施镀相比,在Ni-P底层上的Co-P磁记录薄膜输出信号幅值均匀稳定,信噪比良好.     

Dy掺杂的CdS薄膜的制备及性能分析

采用化学水浴法在玻璃衬底上制备纯的和稀土Dy掺杂的CdS薄膜,并在N2气氛中,对以上制备的薄膜进行T=350℃、t=40min的热处理.实验结果表明,水浴温度在70℃～80℃间制备的CdS薄膜,表面致密、光滑,膜的质量最好,且为沿[111]晶向择优生长的立方闪锌矿结构.掺Dy虽未改变CdS薄膜的晶体结构,但改善了薄膜的表面形貌,使得薄膜的致密性增强、颗粒大小匀称,同时Dy的掺入增大了CdS薄膜在可见光范围内的透光率.     

Mn、Co掺杂ZnO薄膜结构及发光特性研究

利用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了ZnO、Zn0.8Mn0.2O、Zn0.8Co0.2O薄膜.薄膜的晶体结构和表面形貌采用X射线衍射仪和原子力显微镜测试.表明薄膜具有明显的c轴择优生长取向,薄膜表面较为平整,颗粒尺寸在纳米量级,薄膜中晶粒的生长模式为"柱状"模式.此外,Mn、Co掺入后,薄膜的X射线衍射峰有小角度偏移,这与 Mn2 、Co2 离子半径有关.PL谱显示Mn、Co掺杂ZnO薄膜的蓝、绿发光峰的位置相对纯的ZnO薄膜没有改变,还出现了紫外发光峰,其中Mn掺杂的蓝、绿光峰的强度减弱,Co掺杂的蓝光峰强度减弱,绿光峰强度增强.这是因为Mn、Co掺入改变了ZnO本征缺陷的浓度,发光峰的强度也随之而改变.     

掺银TiO2薄膜的亲水特性

采用溶胶—凝胶法及浸渍提拉法在普通的载玻片上制得含不同掺银量的TiO2薄膜，通过对薄膜及相应粉体的XRD、XPS及薄膜致密度的测量，分析了银的掺杂量对TiO2薄膜亲水特性的影响。结果表明：TiO2薄膜中银的掺杂量≤0．635mol％时有利于TiO2薄膜亲水性能的改善；表面羟基和表面桥氧的含量对TiO2薄膜的亲水性能均有直接影响。     

二氧化锡薄膜的MOD法制备和表征

采用新颖的金属有机物热分解方法（MOD）制备了二氧化锡薄膜,红外分析和热分析表明,先体制备过程中生成了锡的有机物,这对制备质量良好的光学薄膜起了决定作用。对薄膜的红外光谱和紫外－可见光谱的分表明,薄的热处理过程中经历了溶剂挥发、有机物燃烧和析晶等过程,随热处理温度的升高,薄膜的孔率显著减小,薄的结构致密,这是由制备过程的特点决定的。     

微机械悬桥法研究氮化硅薄膜力学性能

利用高精密纳米压入仪检测微机械悬桥的载荷-挠度曲线,来研究低应力LPCVD氮化硅薄膜的力学特性。通过大挠度理论分析,得到考虑了衬底变形对挠度有贡献的微桥挠度解析表达式。对于在加卸载过程中表现出完全弹性的微桥,利用最小二乘法对其挠度进行了拟合,从而得到杨氏模量、残余应力和弯曲强度等力学特性参数。低应力LPCVD氮化硅薄膜的研究结果:杨氏模量为(308.4±24.1)GPa,残余应力为(252.9±32.4)MPa,弯曲强度为(6.2±1.3)GPa。