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1.
The microstructures and the microwave dielectric properties of the x(Mg0.95Zn0.05)TiO3-(1 − x) Ca0.8Sm0.4/3TiO3 ceramic system were investigated. In order to achieve a temperature-stable material, we studied a method of combining a positive temperature coefficient material with a negative one. Ca0.8Sm0.4/3TiO3 has dielectric properties of dielectric constant εr ~ 120, Q × f value ~ 13,800 GHz and a large positive τf value ~ 400 ppm/°C. (Mg0.95Zn0.05)TiO3 possesses high dielectric constant (εr ~ 16.21), high quality factor (Q × f value ~ 210,000 at 9 GHz) and negative τf value (− 59 ppm/°C). Sintering at 1300 °C with x = 0.9, 0.9(Mg0.95Zn0.05Ti)O3 − 0.1 Ca0.8Sm0.4/3TiO3 has a dielectric constant (εr) of 22.7, a Q × f value of 124,000 GHz and a temperature coefficient of resonant frequency (τf) of − 6.3 ppm/°C.  相似文献   

2.
The Gd2(TixZr1 − x)2O7 (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd2(TixZr1 − x)2O7 were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd2(TixZr1 − x)2O7 from room temperature to 1400 °C was measured by a laser-flash method. The Gd2Zr2O7 has a defect fluorite-type structure; however, Gd2(TixZr1 − x)2O7 (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd2Zr2O7 and Gd2Ti2O7 are infinitely soluable. The thermal conductivity of Gd2(TixZr1 − x)2O7 increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd2(TixZr1 − x)2O7 first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd2(TixZr1 − x)2O7 is within the range of 1.33 to 2.86 W m− 1 K− 1 from room temperature to 1400 °C.  相似文献   

3.
ZnO-(1 − x)TiO2-xSnO2 (x = 0.04-0.2) ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. Fine particle powders were prepared by chemical processing to activate the formation of compound and to improve the sinterability. One wt.% of V2O5 and B2O3 with the mole ratios of 3:1 were used to lower the sintering temperature of ceramics. The effect of Sn content on phase structure and dielectric properties were investigated. The results show that the substituting Sn for Ti accelerates the hexagonal phase transition to cubic phase, and an inverse spinel structure Zn2(Ti1−xSnx)O4 solid solution forms. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO2-0.12SnO2 ceramics sintered at 900 °C exhibit a good dielectric property: ?r = 29 and tan δ = 9.86 × 10−5. Due to their good dielectric properties, low firing characteristics, ZnO-(1 − x)TiO2-xSnO2 (x = 0.04-0.2) can serve as the promising microwave dielectric capacitor.  相似文献   

4.
High dielectric constant and low loss ceramics in the system Ba2 − xSrxLa3Ti3NbO15 (x = 0-1) have been prepared by conventional solid-state ceramic route. Ba2 − xSrxLa3Ti3NbO15 solid solutions adopted A5B4O15 cation-deficient hexagonal perovskite structure for all compositions. The materials were characterized at microwave frequencies. They show a linear variation of dielectric properties with the value of x. Their dielectric constant varies from 48.34 to 43.03, quality factor Qu × f from 20,291 to 39,088 GHz and temperature variation of resonant frequency from 8 to 1.39 ppm/°C as the value of x increases. These low loss ceramics might be used for dielectric resonator (DR) applications.  相似文献   

5.
(5 − x)BaO-xMgO-2Nb2O5 (x = 0.5 and 1; 5MBN and 10MBN) microwave ceramics prepared using a reaction-sintering process were investigated. Without any calcinations involved, the mixture of BaCO3, MgO, and Nb2O5 was pressed and sintered directly. MBN ceramics were produced after 2-6 h of sintering at 1350-1500 °C. The formation of (BaMg)5Nb4O15 was a major phase in producing 5MBN ceramics, and the formation of Ba(Mg1/3Nb2/3)O3 was a major phase in producing 10MBN ceramics. As CuO (1 wt%) was added, the sintering temperature dropped by more than 150 °C. We produced 5MBN ceramics with these dielectric properties: ?r = 36.69, Qf = 20,097 GHz, and τf = 61.1 ppm/°C, and 10MBN ceramics with these dielectric properties: ?r = 39.2, Qf = 43,878 GHz, and τf = 37.6 ppm/°C. The reaction-sintering process is a simple and effective method for producing (5 − x)BaO-xMgO-2Nb2O5 ceramics for applications in microwave dielectric resonators.  相似文献   

6.
The Er2+xTi2−xO7−δ (x = 0.096; 35.5 mol% Er2O3) solid solution and the stoichiometric pyrochlore-structured compound Er2Ti2O7 (x = 0; 33.3 mol% Er2O3) are characterized by X-ray diffraction (phase analysis and Rietveld method), thermal analysis and optical spectroscopy. Both oxides were synthesized by thermal sintering of co-precipitated powders. The synthesis study was performed in the temperature range 650-1690 °C. The amorphous phase exists below 700 °C. The crystallization of the ordered pyrochlore phase (P) in the range 800-1000 °C is accompanied by oxygen release. The ordered pyrochlore phase (P) exists in the range 1000−1200 °C. Heat-treatment at T ≥ 1600 °C leads to the formation of an oxide ion-conducting phase with a distorted pyrochlore structure (P2) and an ionic conductivity of about 10−3 S/cm at 740 °C. Complex impedance spectra are used to separately assess the bulk and grain-boundary conductivity of the samples. At 700 °C and oxygen pressures above 10−10 Pa, the Er2+xTi2−xO7−δ (x = 0, 0.096) samples are purely ionic conductors.  相似文献   

7.
(1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 (0.1 ≤ x ≤ 0.85) composites are prepared by mixing 1150 °C-calcined BaTi4O9 with 1150 °C-calcined Ba(Zn1/3Ta2/3)O3 powders. The crystal structure, microwave dielectric properties and sinterabilites of the (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics have been investigated. X-ray diffraction patterns reveal that BaTi4O9, ordered and disordered Ba(Zn1/3Ta2/3)O3 phases exist independently over the whole compositional range. The sintering temperatures of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics are about 1240 - 1320 °C and obviously lower than those of Ba(Zn1/3Ta2/3)O3 ceramics. The dielectric constants (?r) and the temperature coefficient of resonant frequency (τf) of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics increase with the increase of BaTi4O9 content. Nevertheless, the bulk densities and the quality values (Q × f) of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics increase with the increase of Ba(Zn1/3Ta2/3)O3 content. The results are attributed to the higher density and quality value of Ba(Zn1/3Ta2/3)O3 ceramics, the better grain growth, and the densification of sintered specimens added a small BaTi4O9 content. The (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramic with x = 0.1 sintered at 1320 °C exhibits a ?r value of 31.5, a maximum Q × f value of 68500 GHz and a minimum τf value of 4.1 ppm/°C.  相似文献   

8.
The (0 0 l) textured BaBi2(Nb1 − xVx)2O9 (where x = 0, 0.03, 0.07, 0.1 and 0.13) ceramics were fabricated via the conventional melt-quenching technique followed by high temperature heat-treatment (800-1000 °C range). The influence of vanadium content and sintering temperature on the texture development and relative density were investigated. The samples corresponding to the composition x = 0.1 sintered at 1000 °C for 10 h exhibited the maximum orientation of about 67%. The Scanning electron microscopic studies revealed the presence of platy grains having the a-b planes perpendicular the pressing axis. The dielectric constant and the pyroelectric co-efficient values in the direction perpendicular to the pressing axis were higher. The anisotropy in the dielectric constant is about 100 (at 100 kHz) at the dielectric maximum temperature and anisotropy in the pyroelectric co-efficient is about 50 μC cm−2 °C−1 in the vicinity of pyroelectric anomaly for the sample corresponding to the composition x = 0.1 sintered at 1000 °C. Higher values of the dielectric loss and electrical conductivity were observed in the direction perpendicular to the pressing axis which is attributed to the high oxygen ion conduction in the a-b planes.  相似文献   

9.
This paper reports the structural and dielectric properties of Ba(Ti1 − xZrx)O3 (x = 0-0.3) ceramics. Single-phase solid solutions of the samples were determined by X-ray diffraction. Microscopic observation by scanning electron microscope revealed dense, single-phase microstructure with large grains (20-60 μm). The evolution of dielectric behavior from a sharp ferroelectric peak (for x ≤ 0.08) to a round dielectric peak (for 0.15 ≤ x ≤ 0.25) with pinched phase transitions and successively to a ferroelectric relaxor (for x = 0.3) was observed with increasing Zr concentration. Compared with pure BaTiO3, broaden dielectric peaks with high dielectric constant of 25,000-40,000 and reasonably low loss (tanδ: 0.01-0.06) in the Ba(Ti1 − xZrx)O3 ceramics have been observed, indicating great application potential as a dielectric material.  相似文献   

10.
The phase structure, microwave dielectric properties, and their stability with different annealing conditions have been investigated in (Li1/4Nb3/4) substituted ZrxSnyTizO4 system. The sintering temperature of ZrxSnyTizO4 ceramic was lowered from 1500 to 1140 °C by (Li1/4Nb3/4) substitution. Both X-ray diffraction (XRD) analysis and electron diffraction (ED) analysis revealed that the (Li1/4Nb3/4) substituted ZrxSnyTizO4 ceramic crystallized as the high-temperature disordered ZrTiO4 phase. As the content of Sn increased from 0.10 to 0.30, the permittivity of the (Zr1−xSnx)(Li1/4Nb3/4)0.4Ti0.6O4 ceramic decreased gradually from 35.5 to 31.5, the Qf value increased from 37,800 to 58,300 GHz, and TCF value shifted slightly from −4.5 to −33.0 ppm °C−1. Both the phase structure and microwave dielectric properties of (Zr1−xSnx)(Li1/4Nb3/4)0.4Ti0.6O4 ceramics were stable with annealing conditions.  相似文献   

11.
The microstructures and the microwave dielectric properties of the (1 − x)Mg4Nb2O9-xCaTiO3 ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO3 (τf ∼ 800 ppm/°C) was chosen as a τf compensator and added to Mg4Nb2O9 (τf ∼ −70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 − x)Mg4Nb2O9-xCaTiO3 ceramic system, near-zero τf value can be achieved. A new microwave dielectric material, 0.5Mg4Nb2O9-0.5CaTiO3 applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant ?r ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τf value ∼−0.3 ppm/°C.  相似文献   

12.
A bismuth and lead oxide based perovskite ternary solid solution xBi(Zn1/2Ti1/2)O3 − yPbZrO3 − zPbTiO3 (xBZT − yPZ − zPT) was investigated as an attempt to develop a high TC ferroelectric material for piezoelectric sensor and actuator applications. A morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was determined through an XRD study on a pseudobinary line 0.1BZT − 0.9[xPT − (1 − x)PZ] for composition 0.1Bi(Zn1/2Ti1/2)O3 − 0.5PbZrO3 − 0.4PbTiO3. Enhanced piezoelectric and ferroelectric activities were observed for MPB composition with dielectric constant εr′ ~ 23,000 at Curie temperature (TC) ≈ 320 °C, remanent polarization (Pr) = 35 μC/cm2, piezoelectric coefficient (d33) = 300 pC/N, unipolar strain = 0.15%, and electromechanical coupling coefficient (kP) = 0.45.  相似文献   

13.
Ceramics in a PZT-PCN system with the formula (1 − x)Pb(Zr1/2Ti1/2)O3-(x)Pb(Co1/3Nb2/3)O3, where x = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5, and 1.0, were prepared using a solid-state mixed-oxide technique with columbite−CoNb2O6 and wolframite−ZrTiO4 precursors. The crystal structure of the specimens studied with X-ray diffraction (XRD) analysis showed a coexistence between tetragonal and pseudo cubic phases at composition x = 0.2. The SEM micrograph showed that the average grain size significantly decreased with increasing PCN content. A maximum dielectric constant was observed at composition x = 0.2, while the transition temperature strongly decreased with increasing PCN content. All ceramics also showed diffused phase transition behaviors with a minimum diffusivity at x = 0.2. The morphotropic phase boundary (MPB) lay at the 0.8PZT-0.2PCN composition.  相似文献   

14.
Features of phase coexistence in solid solutions of (1 − x)Pb(Fe1/2Nb1/2)O3 − xPbTiO3 with the perovskite-type structure are studied at 0.05 ≤ x ≤ 0.08. The role of elastic matching of the tetragonal P4mm and monoclinic Cm phases of the ferroelectric nature is considered near the morphotropic phase boundary. Model concepts on the stress relief in heterophase structures are developed and applied to interpret the phase content in (1 − x)Pb(Fe1/2Nb1/2)O3 − xPbTiO3. Good agreement between the calculated and experimental dependences of the volume fraction of the tetragonal phase on x is observed. It is shown that the studied phase coexistence under conditions for the complete stress relief can take place at elastic matching of the single-domain monoclinic phase and the tetragonal phase split into two types of 90° domains.  相似文献   

15.
Differential scanning calorimetry (DSC), infrared (IR) and direct current (DC) conductivity studies have been carried out on (100 − 2x)TeO2-xAg2O-xWO3 (7.5 ≤ x ≤ 30) glass system. The IR studies show that the structure of glass network consists of [TeO4], [TeO3]/[TeO3+1], [WO4] units. Thermal properties such as the glass transition (Tg), onset crystallization (To), thermal stability (ΔT), glass transition width (ΔTg), heat capacities in the glassy and liquid state (Cpg and Cpl), heat capacity change (ΔCp) and ratios Cpl/Cpg of the glass systems were calculated. The highest thermal stability (237 °C) obtained in 55TeO2-22.5Ag2O-22.5WO3 glass suggests that this new glass may be a potentially useful candidate material host for rare earth doped optical fibers. The DC conductivity of glasses was measured in temperature region 27-260 °C, the activation energy (Eact) values varied from 1.393 to 0.272 eV and for the temperature interval 170-260 °C, the values of conductivity (σ) of glasses varied from 8.79 × 10−9 to 1.47 × 10−6 S cm−1.  相似文献   

16.
Electrical and magnetoelectric properties of magnetoelectric (ME) composites containing barium titanate as electrical component and a mixed Ni-Co-Mn ferrite as the magnetic component are reported. The ME composites with a general formula (x)BaTiO3 + (1 − x)Ni0.94Co0.01Mn0.05Fe2O4 where x varies as 0, 0.55, 0.70, 0.85 and 1 were prepared by standard double sintering ceramic method. The presence of both the phases was confirmed by X-ray diffraction technique. The dc resistivity was measured as a function of temperature. The variation of dielectric constant (?) and loss tangent (tan δ) with frequency (100 Hz-1 MHz) and with temperature was studied. The conduction is explained on the basis of small polaron model based on ac conductivity measurements. The static value of ME conversion factor i.e. dc (ME)H was studied as function of intensity of magnetic field. The changes were observed in dielectric properties as well as ME effect as the molar ratio of the components was varied. A maximum value of ME conversion factor of 610 μV/cm Oe was observed in the case of a composite containing 15 mol% ferrite phase.  相似文献   

17.
(Zn1 − xNix)Ta2O6 ceramics have been prepared via conventional mixed oxide route. The phase evolution and microstructure of (Zn1 − xNix)Ta2O6 ceramics were investigated. The Raman spectroscopy was used to confirm the minor phase formation. The bond valence of (Zn1 − xNix)Ta2O6 ceramics was calculated to evaluate the relation between bond valence and the microwave properties. The effects of Ni2+ ionic substitution on microwave dielectric properties of (Zn1 − xNix)Ta2O6 ceramics were discussed. The dielectric constant and temperature coefficient of resonant frequency of (Zn1 − xNix)Ta2O6 ceramics were depended upon phase composition and bond valence. The Q × ? was not significantly different for all levels of Ni2+ ionic concentration.  相似文献   

18.
The crystal structure and microwave dielectric properties of the (Sm1−xYx)(Ti1.5W0.5)O6 (x = 0 and 0.5) ceramics sintered at 1375 °C for 2-50 h were investigated in this study. No secondary phase was observed in the samples sintered for various sintering times, whereas a secondary phase was formed in the (Sm0.5Y0.5)(Ti1.5W0.5)O6 ceramic sintered at 1400 °C for 50 h. As for the microstructure analysis, the formation of the liquid phase was observed in the both of the samples sintered for 20 and 50 h. The formation of the liquid phase is related to the compositional change of Ti and W from the stoichiometric composition of the samples caused by the instability of crystal structure. The dielectric constants were increased with increased sintering time in the both of the samples, though variations in the temperature coefficient of resonant frequency of the samples were not recognized with the variation in the sintering time. Moreover, although the quality factors of the each sample increased with increasing the sintering time from 2 to 10 h, decreases in the quality factors were recognized when the sintering time was over 10 h.  相似文献   

19.
Cd(1 − x)ZnxS thin films have been grown on glass substrates by the spray pyrolysis method using CdCl2 (0.05 M), ZnCl2 (0.05 M) and H2NCSNH2 (0.05 M) solutions and a substrate temperature of 260 °C. The energy band gap, which depends on the mole fraction × in the spray solution used for preparing the Cd(1 − x)ZnxS thin films, was determined. The energy band gaps of CdS and ZnS were determined from absorbance measurements in the visible range as 2.445 eV and 3.75 eV, respectively, using Tauc theory. On the other hand, the values calculated using Elliott-Toyozawa theory were 2.486 eV and 3.87 eV, respectively. The exciton binding energies of Cd0.8Zn0.2S and ZnS determined using Elliott-Toyozawa theory were 38 meV and 40 meV, respectively. X-ray diffraction results showed that the Cd(1 − x)ZnxS thin films formed were polycrystalline with hexagonal grain structure. Atomic force microscopy studies showed that the surface roughness of the Cd(1 − x)ZnxS thin films was about 50 nm. Grain sizes of the Cd(1 − x)ZnxS thin films varied between 100 and 760 nm.  相似文献   

20.
Ceramics in the system (1 − x)(Mg0.95Zn0.05)TiO3-x(Na0.5Nd0.5)TiO3 were prepared by the conventional mixed oxide route. It shows a two-phase system of an ilmenite structured (Mg0.95Zn0.05)TiO3 and a perovskite structured (Na0.5Nd0.5)TiO3, which were confirmed by XRD and EDX. In addition, (Mg0.95Zn0.05)Ti2O5 was identified as a second phase. It was also responsible for a rapid drop in the Q × f value. The temperature coefficient of resonant frequency was a function of compositional ratio. Specimen with x = 0.16 possessed an excellent combination of microwave dielectric properties: εr ~ 24.27, Q × f ~ 82,000 GHz (at 9 GHz) and τf ~ 0 ppm/°C.  相似文献   

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