Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature

CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T_S > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K.     

Preparation and characteristics of CdS thin films by dip-coating method using its nanocrystal ink

CdS nanocrystals were synthesized by hot injection method using EG as solvent, polyvinylpyrrolidone as dispersant, triethanolamine as stabilizing agent, Cd(NO₃)₂·4H₂O and H₂NCSNH₂ as cadmium and sulfur sources respectively. The synthesized nanocrystals were washed and ultrasonically dispersed with absolute ethanol to prepare nanocrystal ink. CdS thin films were deposited by dip-coating glass substrates with the nanocrystal ink and annealed at 450 °C in Ar atmosphere. Crystalline phase, morphology and element stoichiometry of the CdS nanocrystals derived from different synthesis temperatures were investigated by XRD, TEM and EDS. Surface morphology, crystalline phase and optical absorption spectrum of the CdS films were characterized by SEM, XRD and UV-Vis.     

Structural and optical properties of CdS thin films grown by chemical bath deposition

Cubic cadmium sulphide (CdS) thin films with (111) preferential orientation were prepared by chemical bath deposition (CBD) technique, using the reaction between NH₄OH, CdSO₄ and CS(NH₂)₂. The films properties have been investigated as a function of bath temperature and deposition time. Structural properties of the obtained films were studied by X-ray diffraction analysis. The structural parameters such as crystallite size have been evaluated. The transmission spectra, recorded in the UV visible range reveal a relatively high transmission coefficient (70%) in the obtained films. The transmittance data analysis indicates that the optical band gap is closely related to the deposition conditions, a direct band gap ranging from 2.0 eV to 2.34 eV was deduced. The electrical characterization shows that CdS films' dark conductivities can be controlled either by the deposition time or the bath temperature.     

Influence of the film thickness on structural and optical properties of CdTe thin films electrodeposited on stainless steel substrates

CdTe thin films of different thicknesses were deposited by electrodeposition on stainless steel substrates (SS). The dependence of structural and optical properties on film thickness was evaluated for thicknesses in the range 0.17–1.5 μm. When the film is very thin the crystallites lack preferred orientation, however, thicker films showed preference for (111) plane. The results show that structural parameters such as crystallite size, lattice constant, dislocation density and strain show a noticeable dependence on film thickness, however, the variation is significant only when the film thickness is below 0.8 μm. The films were successfully transferred on to glass substrates for optical studies. Optical parameter such as absorption coefficient (α), band gap (E_g), refractive index (n), extinction coefficient (k_e), real (?_r) and imaginary (?_i) parts of the dielectric constant were studied. The results indicate that all the optical parameters strongly depend on film thickness.     

Influence of VI/II ratios on the growth of ZnO thin films on sapphire substrates by low temperature MOCVD

We investigated the structural, electrical, and optical properties of ZnO thin films grown at different VI/II ratios on sapphire substrates by metalorganic chemical vapor deposition. Transmission electron microscopy and X-ray diffraction revealed the epitaxial nature with a reduced dislocation density of the ZnO films grown at increased VI/II ratios. The carrier concentration of the films increased to 4.9 × 10¹⁸ cm^− 3 and their resistivity decreased to 1.4 × 10^− 1 Ω cm at a VI/II ratio of 513.4 μmol/min. The ZnO films also showed good optical transmittance (> 80%) in the visible and near-infrared wavelength regions. The room temperature PL revealed a strong band-edge emission with a weak deep level emission, suggesting the good crystalline quality of the ZnO films on the sapphire substrates. Furthermore, the intensity ratio of the band-edge emission to the deep-level emission (I_UV/I_Vis) increased with increasing VI/II ratio.     

Thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth (GREG) technique using photoacoustic methods

In this work we report the study of the thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth technique. CdS films were grown on pyrex glass substrates. These studies were carried out using an open photoacoustic cell made out of an electret microphone. From X-ray diffraction, atomic force microscope and photoluminescence measurements we observed polycrystalline CdS films with good morphology and crystalline quality. We obtained a thermal diffusivity coefficient of our samples with values ranging from 3.15 to 3.89 × 10^− 2 cm²/s. For comparison, we measured a value of 1.0 × 10^− 2 cm²/s for the thermal diffusivity coefficient of a CdS single crystal. We measured an energy gap value of 2.42 eV for our samples by using a photoacoustic spectroscopy system.     

Growth of diborides thin films on different substrates by pulsed laser ablation

The growth of scandium, titanium and zirconium diborides thin films by pulsed laser ablation technique on different substrates has been studied. In situ reflection high energy electron diffraction and ex situ X-ray diffraction analyses indicate that the films are strongly c-axis oriented on all the substrates and also epitaxial, apart from Si(111), where the in plane orientation is poor. Atomic force microscopy imaging reveals a flat surface in all the epitaxial samples, with roughness lower than 1 nm. The results on silicon carbide and sapphire are very promising for using these materials as buffer layers in magnesium diboride thin films growth, especially to improve epitaxy and to prevent oxygen diffusion from the substrate, and also to study the influence of lattice strain on MgB₂ critical temperature.     

Chemical bath deposition of textured ZnO thin films in aqueous/ethanolic solution

ZnO thin films have been prepared by chemical bath deposition in aqueous/ethanolic solution. The film texture was successfully controlled by varying the volume ratio of water to ethanol. Films consisting of densely oriented nanorod arrays with the c-axis perpendicular to the substrate were fabricated in aqueous solution. The crystals became increasingly tilted as more ethanol was introduced to the solution, resulting in the cracked nanocolumns and the smoothed crystals. The crystal size was decreased with increasing ethanol content, and granular morphology was obtained in films deposited in ethanolic solution. A gradual evolution of the film texture is possibly due to the inhibited crystal growth in solution with higher ethanol content.     

Optical constants of CdS thin films prepared by spray pyrolysis

CdS thin films were prepared by spray pyrolysis techniques. Variable angle spectroscopic ellipsometry was used for optical constant calculations. Multiple angle measurements were taken in the most sensitive angle of incidence region. The sensitive regions of angle of incidence were obtained theoretically using 3-dimensional graph ofδψ andδΔ. Real partn and imaginary partk of the complex refractive index of the samples were calculated in the wavelength range 470–650 nm, taking into account surface roughness. Bruggeman’s effective medium approximation is used for analysis of the surface rough layer of the thin films.     

Ellipsometric studies of microscopic surface roughness of CdS thin films

Analysis of changes in surface roughness of CdS thin films with preparation temperature was carried out using variable angle spectroscopic ellipsometry (VASE). The films studied were prepared by spray pyrolysis technique, in the substrate temperature range 200–360°C. The VASE measurements were carried out in the visible region below the band gap (E _g=2·4eV) of CdS so as to reduce absorption by the film. The thickness of the films was in the range 500–600 nm. Bruggeman’s effective medium theory was used for analysis of the surface roughness of the film. The roughness of the film had a high value (∼ 65 nm) for films prepared at low temperature (200°C) and decreased with increase in substrate temperature. This reached minimum value (∼ 27 nm) in the temperature range 280–300°C. Thereafter roughness increased slowly with temperature. The growth rate of the films was calculated for different temperature ranges. It was found that the deposition rate decreases with the increase in substrate temperature and have an optimum value at 300°C. Above this temperature deposition rate decreased sharply. The scanning electron micrograph (SEM) of the film also showed that the film prepared at 280–300°C had very smooth surface texture.     

CdS nanoparticles incorporated onion-like mesoporous silica films: Ageing-induced large stokes shifted intense PL emission

CdS nanoparticles (NPs) were generated in onion-like ordered mesoporous SiO₂ films through a modified sol–gel process using P123 as a structure directing agent. Initially Cd²⁺ doped (12 equivalent mol% with respect to the SiO₂) mesoporous SiO₂ films were prepared on glass substrate. These films after heat-treatment at 350 °C in air yielded transparent mesoporous SiO₂ films having hexagonally ordered onion-like pore channels embedded with uniformly dispersed CdO NPs. The generated CdO NPs were transformed into CdS NPs after exposing the films in H₂S gas at 200 °C for 2 h. The as-prepared CdS NPs incorporated mesoporous SiO₂ films (transparent and bright yellow in color) showed a band-edge emission at 485 nm and a weak surface defect related emission at 530 nm. During ageing of the films in ambient condition the band-edge emission gradually weakened with time and almost disappeared after about 15 days with concomitant increase of defect related strong surface state emission band near 615 nm. This transformation was related to the decay of initially formed well crystalline CdS to relatively smaller and weakly crystalline CdS NPs with surface defects due to gradual oxidation of surface sulfide. At this condition the embedded CdS NPs show large Stokes shifted (∼180 nm) intense broad emission which could be useful for luminescent solar concentrators. The detailed process was monitored by UV–Visible, FTIR and Raman spectroscopy, XPS, XRD and TEM studies. The evolution of photoluminescence (PL) and life times of CdS/SiO₂ films were monitored with respect to the ageing time.     

The surface free energy of pyrite films prepared by sulfurizing the precursive electrodeposited films

The pyrite films were prepared by sulfurizing the precursive films at different temperatures. The microstructure, chemical compositions and surface free energy have been investigated. The results indicate that pyrite films are obtained after the sulfuration process of precursive films. The sulfuration temperature remarkably influences the contact angle. Using Owens and Wendt geometric mean approach, the surface free energy, the dispersive surface free energy and polar surface free energy can be evaluated based on the value of contact angles. It has been found that the surface free energy is significantly dependent on the sulfuration temperature and chemical compositions of films. With the increase of the sulfuration temperature, the dispersive surface free energy decreases but the polar surface free energy keeps basically invariable. A possible relationship between the surface free energy and film quality has been discussed.     

Reflection properties of oriented thin CdS films formed by laser ablation

Oriented thin (≈2 μm) films, CdS, prepared by laser ablation were characterized by the dependence of external and internal reflection on both the angle of incidence and the polarization of laser light. The samples exhibit perpendicular and parallel orientation of the crystallographic axis with respect to the surface of the glass substrate. The experiments were performed at 300 K using low intensity (<1 W/cm²) cw emissions at 476.5, 514.5 and 632.8 nm of argon and He–Ne lasers respectively. For blue and green light, the results are very well described by the theoretical models based on Fresnel reflection. In contrast to the external features, the internal reflectance exhibits dichroism and birefringence of the samples at 514.5 nm, revealing the sensitivity of the internal reflection technique to the optical anisotropy of the films. Considering multiple-beam interference, the model of Fresnel also describes satisfactorily the results for red light. However, a rather sensitive dependence on the incoming He–Ne laser intensity was observed. In fact, by increasing the intensity of 64 mW/cm² by about one order of magnitude, only the external reflectance shows good agreement with the theory, whereas the internal reflection properties are obviously influenced by additional effects, such as non-linear change of the optical constants, which are not included in Fresnel reflection considerations.     

Amplitude-dependent internal friction in copper thin films on silicon substrates

Internal friction in copper thin films 0.2–1.5 μm thick on silicon substrates has been measured between 180 and 340 K as a function of strain amplitude. Analysis of the amplitude-dependent internal friction in the copper films shows the relation between the plastic strain of the order of 10⁻⁹ and the effective stress on dislocation motion. The stress–strain curves thus obtained for the copper films tend to shift to a higher stress with decreasing film thickness and also with decreasing temperature, both indicating a suppression of microplastic flow. It is concluded that the microflow stress at a constant level of the plastic strain varies inversely with the film thickness at all temperatures examined. The film thickness effect in the microplastic range can be explained on the basis of a dislocation-bowing model.     

Growth and characterisation of electrodeposited ZnO thin films

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 °C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between − 0.900 and − 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be ∼ 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was found to be 0.40 μm as measured using the Talysurf instrument, after deposition for 3 min. Environmental scanning electron microscopy was used to view the cross-section of glass/FTO/ZnO layers.     

Room temperature deposited vanadium oxide thin films for uncooled infrared detectors

We demonstrate the room temperature deposition of vanadium oxide thin films by pulsed laser deposition (PLD) technique for application as the thermal sensing layer in uncooled infrared (IR) detectors. The films exhibit temperature coefficient of resistance (TCR) of 2.8%/K implies promising application in uncooled IR detectors. A 2-D array of 10-element test microbolometer is fabricated without thermal isolation structure. The IR response of the microbolometer is measured in the spectral range 8-13 μm. The detectivity and the responsivity are determined as ∼6×10⁵ cm Hz^1/2/W and 36 V/W, respectively, at 10 Hz of the chopper frequency with 50 μA bias current for a thermal conductance G∼10-3 W/K between the thermal sensing layer and the substrate. By extrapolating with the data of a typical thermally isolated microbolometer (G∼10⁻⁷ W/K), the projected responsivity is found to be around 10⁴ V/W, which well compares with the reported values.     

Influence of substrates on the structural and optical properties of chemically deposited CdS films

Cadmium sulfide (CdS) films were chemically deposited on glass, polycarbonate (PC), polyethylene terephthalate (PET), and Si wafer. Effects of substrate types on the structural and optical properties of the films were investigated. There is a preferential orientation of the crystallites in the film grown on the glass along the c-axis (perpendicular to the plane of the substrate) producing a strong hexagonal (0 0 2) or cubic (1 1 1) peak, regardless of the presence of ITO coating. However, such preferential orientation decreases or disappears when the deposition was made onto PC or PET substrates. The crystallinity of CdS films on glass and Si is better than that of the other ones. The average transmittance of the films on PC and PET is about 50% and 55%, respectively, and increases up to 70% for glass substrate. The improvement of the transmittance was obtained from ITO-coated substrates.     

Orientation enhancement of polycrystalline ZnO thin films through thermal oxidation of electrodeposited zinc metal

The polycrystalline ZnO thin films with (002) orientation enhancement were prepared by annealing of electrodeposited metallic Zn films from the ethylene glycol solution of zinc acetate without using any catalyst and template. The morphologies of the thin films were evolved from the nanoplate to the nanocolumn structures with increasing of annealing temperature from 100 °C to 500 °C. SEM and XRD studies indicated that the ZnO nanocolumns were enhanced in the (002) orientation along their length direction. The UV-vis absorption spectra of the ZnO films obtained by annealing at 300 °C and 500 °C were carried out and their band gaps were 3.18 eV and 3.20 eV, respectively. A possible growth mechanism of the ZnO nanostructures responsible for the morphologies and orientation evolution was discussed.