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1.
Undoped and Sn-doped (1, 1.5 and 2 at.%) indium oxide (In2O3) thin films have been grown by the chemical spray pyrolysis technique on cleaned glass substrates using indium nitrate [In(NO3)3] and stannic tetrachloride hydrated (SnCl4·5H2O) as the host and dopant precursors, respectively, and deionized water as the solvent. Structural characterization using x-ray diffraction reveals that the films possess cubic structure, with the average crystallite size in the range 10-14 nm. The surface morphology and roughness of the films have been investigated by means of an atomic force microscope. UV-Vis measurements indicate an enhancement in the optical transmittance in the visible region on Sn doping. Further, the doping effect has been found to substantially reduce the electrical resistance to a few orders of magnitude of the undoped In2O3 film. We report a simultaneous improvement in both the optical and electrical properties of indium oxide thin film due to the doping of Sn ions. These results indicate that Sn-doped In2O3 thin film can be a potential candidate for use in various optoelectronic devices. Among all the films examined, the 1 at.% Sn-doped film shows the maximum response (~91%) at 300 °C for 80 ppm concentration of formaldehyde in air.  相似文献   

2.
含Pd大约为 30 % (mol)的Fe Pd合金具有fcc -fct热弹性马氏体转变而引发的形状记忆效应。Fcc型奥氏体相和fct型马氏体相都是无序的 ,因为Fe Pd合金具有铁磁性能 ,所以外磁场能引起其大应变至少有2种途径 :( 1)是磁场控制马氏体孪晶的再取向 ;( 2 )磁场引起奥氏体向马氏体的相转变。现已发现Fe70 Pd30合金由于磁场所引发的应变量 ,要比Terfenol D之类巨磁致伸缩材料大 1个数量级之多 ,近年来也发现了一系列的其它磁性形状记忆合金 ,如Ni2 MnGa、FeNi和FeNiCoTi,都是很有发展前途的…  相似文献   

3.
Thin films of zinc-doped cadmium oxide with different Zn-doping levels(0, 2, 4, 6, and 8 at%) were deposited on glass substrates by employing an inexpensive, simplified spray technique using perfume atomizer at relatively low substrate temperature(375 °C) compared with the conventional spray method. The effect of Zn doping on the structural,morphological, optical, and electrical properties of the films was investigated. XRD patterns revealed that all the films are polycrystalline in nature having cubic crystal structure with a preferential orientation along the(1 1 1) plane irrespective of Zn-doping level. Zn-doping level causes a slight shift in the(1 1 1) diffraction peak toward higher angle. The crystallite size of the films was found to be in the range of 28–37 nm. The band gap value increases with Zn doping and reaches a maximum of 2.65 eV for the film coated with 6 at% Zn doping and for further higher doping concentration it decreases.Electrical studies indicate that Zn doping causes a reduction in the resistivity of the films and a minimum resistivity of15.69 X cm is observed for the film coated with 6 at% Zn.  相似文献   

4.
Coatings of zirconium oxide were deposited onto three types of stainless steel, AISI 316L, 2205, and tool steel AISI D2, using the ultrasonic spray pyrolysis method. The effect of the flux ratio on the process and its influence on the structure and morphology of the coatings were investigated. The coatings obtained, 600 nm thick, were characterized using x-ray diffraction, scanning electron microscopy, confocal microscopy, and atomic force microscopy. The resistance to corrosion of the coatings deposited over steel (not nitrided) and stainless steel nitrided (for 2 h at 823 K) in an ammonia atmosphere was evaluated. The zirconia coating enhances the stainless steel’s resistance to corrosion, with the greatest increase in corrosion resistance being observed for tool steel. When the deposition is performed on previously nitrided stainless steel, the morphology of the surface improves and the coating is more homogeneous, which leads to an improved corrosion resistance.  相似文献   

5.
以CoCl2.6H2O和CH4N2S为前驱物,通过超声喷雾热解法,制备了立方相Co9S8纳米碎壳和Co3S4 纳米晶。所制备的样品用XRD,SEM,EDX和FTIR进行了表征,结果发现过量的硫脲和反应时间对产物的形貌有明显影响。通过控制反应温度可以控制样品的物相,并且对空心和实心晶体结构的产生提出了相应的机理。  相似文献   

6.
ZnO films were prepared at different substrate temperatures through spraying pyrolysis deposition of zinc chloride precursor onto glass substrate. Substrate temperature affects surface morphology of films and therefore their optical and electrical properties. All films are polycrystalline with Wurtzite crystal structure and preferentially grow along c-axis direction. Formation of ZnO rods start at about 500 °C. The diameter and length of rods deposited at 500 °C are350–500 and 550–700 nm, respectively. By increasing substrate temperature, film becomes more coverage and diameter of the rods reduces to 250–300 nm but their length increases to 1,000–1,200 nm, respectively. Optical transmission in visible region decreases with increasing substrate temperature. An ultraviolet emission and two visible emissions at 2.82 and2.37 eV are observed for photoluminescence spectra at room temperature. The resistivity of ZnO films increases with increasing substrate temperature due to surface morphology.  相似文献   

7.
Protection of Metals and Physical Chemistry of Surfaces - The effect of annealing temperature on the properties of silver thin films has been investigated. Ag thin films have been deposited on...  相似文献   

8.
反应磁控溅射法制备氧化钒薄膜   总被引:3,自引:0,他引:3  
采用反应磁控溅射加真空退火分别在玻璃和Si(100)基底上制备氧化钒薄膜,利用X射线衍射和原子力显微镜分析其物相和表面形貌。结果表明:氧气体积分数低于15%时,玻璃上薄膜为低价钒氧化物,Si(100)A2薄膜为V2O5(001)织构和V2O3(104)织构,高于20%时两基底上薄膜均为V2O5;玻璃上V2O5薄膜500℃下退火3h生成VO2,退火后薄膜粗糙度明显下降;Si(100)上V2O5薄膜500℃下退火2h生成V2O3(104)织构,退火后薄膜粗糙度变化不大。  相似文献   

9.
氧化物功能薄膜材料的研究新进展   总被引:2,自引:0,他引:2  
氧化物薄膜材料在很多领域中发挥着重要的作用。对各种氧化物功能薄膜材料进行了较为系统的综述,重点评述了透明导电氧化物薄膜、超导氧化物薄膜、磁性氧化物薄膜的研究状况和最新进展。文中最后指出了氧化物功能薄膜材料存在的问题,并展望了它的发展前景。  相似文献   

10.
利用光发射谱(OES)技术,对反应磁控溅射过程的氧化铝薄膜的迟滞效应进行了研究.对等离子体中的铝(396 nm)谱线和氧化铝(484 nm)谱线随氧气流量的变化进行了实时测量,获得了其迟滞曲线.在迟滞曲线的不同位置分别进行了氧化铝薄膜的沉积试验.采用X射线衍射仪(XRD)、能谱仪(EDS)和紫外可见吸收光谱仪(UV-VIS)对薄膜的晶体结构、成分和透光性进行了分析.结果表明:由于磁控靶表面的氧化铝沉积影响了铝靶材的溅射,导致Al(396 nm)谱线的强度对氧化铝薄膜的晶体结构、原子比以及样品的透光性有明显的影响.同时,由迟滞曲线可知在氧气流量为1.5~2.0 mL/min的过渡区内存在着一个最优沉积带.在这个沉积带获得的样品,其成分具有最佳的化学原子量配比,为0.689.这说明沉积出了高质量的氧化铝薄膜.  相似文献   

11.
利用射频磁控溅射法,以高纯氧化镱(Yb2O3)为靶材,成功地制备出了Yb2O3薄膜,并对薄膜的沉积速率、成分、结构和光学性能进行了研究.结果表明,制备的薄膜中Yb和O元素结合形成了Yb2O3化合物;薄膜为具有立方结构的多晶体;在波长0.8 μm以上薄膜的折射率约为1.66,吸收很小.  相似文献   

12.
采用直流磁控双靶共溅射方法,在玻璃基片上制备了非晶态的TbFe磁致伸缩薄膜,研究了溅射功率、工作气压等工艺参数对薄膜成分的影响.研究结果表明:当溅射功率从20W增加到100W时,TbFe薄膜中Tb含量从35.77at%增加到44.54at%;工作气压从0.2 Pa增加到1.0 Pa时,11)Fe薄膜中Tb含量从38.02at%增加到44.1at%.重点研究了真空退火处理对TbFe薄膜磁性及磁致伸缩性能的影响.结果表明,真空退火处理有利于提高平行于膜面的饱和磁化强度和磁导率;350℃真空退火60 min,在外加磁场为5 kOe条件下,TbFe薄膜的磁致伸缩系数可达到351x10-6.  相似文献   

13.
磁控溅射法制备硅钼薄膜及其性能表征   总被引:1,自引:0,他引:1  
用射频磁控溅射法在硅基底上成功制备出具有低电阻率的单一四方相二硅化钼薄膜,并通过X射线衍射仪、原子力显微镜及四探针电阻测试仪对退火前后的薄膜样品进行了结构和电学性能分析。结果表明:薄膜的电学特性强烈依赖于薄膜的微结构和相组成。沉积态薄膜主要为非晶结构。经高温退火后,薄膜的晶态结构发生显著的变化,晶化效果明显提高,薄膜方阻大幅降低。  相似文献   

14.
采用射频反应磁控溅射法在Mo电极上沉积了AlN薄膜.研究了溅射气压、靶基距、溅射功率、衬底温度及N_2含量等不同工艺条件对AlN薄膜择优取向生长的影响.用XRD分析了薄膜的择优取向,用原子力显微镜、高分辨场发射扫描电镜表征了薄膜的形貌.实验结果表明,靶基距和溅射气压的减小,衬底温度及溅射功率的升高有利于AlN(002)晶面的择优取向生长.氮氩比对AlN薄膜择优取向生长影响较小,N_2≥50%(体积分数)时均可制得高c轴择优取向的AlN薄膜.经优化工艺参数制备的AlN柱状晶薄膜适用于体声波谐振滤波器的制备.  相似文献   

15.
The structure and the properties of oxide films formed on titanium in the diphosphate based electrolytes by plasma electrolytic oxidation in the spark-discharge regime at application of inter-electrode voltage 100 to 130 V have been studied. A possibility to obtain oxide layers containing alloying elements by the modification of the composition of electrolytes has been stated. It was found that the chemical and phase composition as well as the topography, the microstructure and the grain size of the formed layers depend on the electrolyte composition, applied current density and inter-electrode voltage. The effect of the chemical composition of the formed mixed oxide films on the corrosion resistance and catalytic activity has been discussed.  相似文献   

16.
A key characteristic property of thin anodic oxide films is the apparent film density which shows significant variation from the conventionally quoted value for thick films. Knowledge of its value is important for the calibration of the films thickness and the process efficiency.

Data from the literature has been critically evaluated and compared with new results for films <4μm thick produced under high rate conditions, i.e. high current density and short times.  相似文献   

17.
高功率脉冲磁控溅射(HiPIMS)技术具有离化率高、等离子体密度高、沉积温度低、薄膜结构致密等优点,与沉积超硬耐磨涂层相比,HiPIMS技术在光电薄膜沉积中的应用相对较少,且HiPIMS镀膜过程中涉及工艺参数较多,工艺参数的选择直接影响着沉积薄膜的结构和性能。基于这两个问题,系统梳理HiPIMS在光电薄膜沉积中放电的时空演变特性,重点介绍HiPIMS技术在光电薄膜沉积过程中的关键工艺参数,包括峰值功率密度、衬底材料、掺杂、偏置电压等,对薄膜结构和性能的影响规律,最后展望HiPIMS技术在光电薄膜沉积中的应用前景与发展趋势。  相似文献   

18.
Cu thin films with different thicknesses were deposited by magnetron sputtering at various oblique angle θ of incidence between the deposition flux and the substrate surface normal.Cross-section microstructure and surface morphology of the films were investigated by scanning electron microscope(SEM)and atomic force microscope(AFM),respectively.Then the scaling behaviors of film surface roughening were analyzed in terms of dynamic scaling theory.With the increasing of the deposition angle θ,the angleφbetween grain growth direction and substrate surface normal increased gradually.With increasing θ in the range of<50°,the roughness exponent α increased from 0.76 to 0.82 and the growth exponent β decreased from 0.42 to 0.35.However,when θ increased to 70°,α and β changed to 0.72 to 0.61,respectively.The evolution of the scaling exponents effectively revealed the fact that the film surface roughening arises from the competition between surface diffusion and shadowing effect.  相似文献   

19.
采用直流磁控溅射法在棉布、涤纶、芳纶织物上制备金属铝膜,研究了铝膜的沉积速率、组织结构和表面形貌。结果表明:在一定的范围内,沉积速率随溅射功率的增大近似呈线性增加,随溅射气压的增加先升后降;基底材料对铝膜的组织结构有较大影响,在涤纶和棉布上沉积的铝膜才呈现出典型的多晶态面心立方结构,在芳纶和涤纶上获得的铝膜较棉布上的铝膜更为均匀、致密;在一定范围内,溅射功率的增大有助于提高铝膜质量。  相似文献   

20.
采用原子层沉积方法在K9玻璃上制备出TiO2薄膜,利用XRD、SEM、AFM、分光光度计和紫外-可见光谱仪表征了不同沉积温度下薄膜的物相结构、光学性能和光催化性能。结果表明:25℃和120℃下制备的TiO2薄膜为无定形态结构,210℃和300℃下可获得锐钛矿结构;随着沉积温度的升高,薄膜的晶粒尺寸变大,表面粗糙度增加,透射率降低,光催化性能增强;300℃下制备的TiO2薄膜(2mm*2mm)经过12h的紫外可见光照射,甲基橙溶液的降解率可达47.16%,通过增加样品表面积可明显提高对甲基橙溶液的降解率。  相似文献   

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