Ba3ZnTa2−xNbxO9 and Ba3MgTa2−xNbxO9 (0≤x≤1): synthesis, structure and dielectric properties

Oxides belonging to the families Ba₃ZnTa_2−xNb_xO₉ and Ba₃MgTa_2−xNb_xO₉ were synthesized by the solid state reaction route. Sintering temperatures of 1300°C led to oxides with disordered (cubic) perovskite structure. However, on sintering at 1425°C hexagonally ordered structures were obtained for Ba₃MgTa_2−xNb_xO₉ over the entire range (0≤x≤1) of composition, while for Ba₃ZnTa_2−xNb_xO₉ the ordered structure exists in a limited range (0≤x≤0.5). The dielectric constant is close to 30 for the Ba₃ZnTa_2−xNb_xO₉ family of oxides while the Mg analogues have lower dielectric constant of ∼18 in the range 50 Hz to 500 kHz. At microwave frequencies (5-7 GHz) dielectric constant increases with increase in niobium concentration (22-26) for Ba₃ZnTa_2−xNb_xO₉; for Ba₃MgTa_2−xNb_xO₉ it varies between 12 and 14. The “Zn” compounds have much higher quality factors and lower temperature coefficient of resonant frequency compared to the “Mg” analogues.     

Structural and dielectric properties of ferroelectric Sr1−xBaxBi2(Nb0.5Ta0.5)2O9 and Sr0.5Ba0.5Bi2(Nb1−yTay)2O9 ceramics

Ferroelectric Sr_1−xBa_xBi₂(Nb_0.5Ta_0.5)₂O₉ and Sr_0.5Ba_0.5Bi₂(Nb_1−yTa_y)₂O₉ were synthesized by solid state reaction route. X-ray diffraction studies confirm the formation of single phase layered perovskite solid solutions over a wide range of compositions (x=y=0.0, 0.25, 0.50, 0.75 and 1). The lattice parameters and the Curie temperature (T_c) have been found to have linear dependence on x and y. Transmission electron microscopy (TEM) suggest the lowering of orthorhombic distortion with increasing Ba²⁺ substitution. Variations in microstructural features as a function of x and y were monitored by scanning electron microscopy (SEM). The dielectric constant at room temperature increases with increase in both x and y. Interestingly Ba²⁺ substitution on Sr²⁺ site induces diffused phase transition and diffuseness increases with increasing Ba²⁺ concentration.     

Effect of La/Sn co-substitution for Ba/Ta on crystal structure and dielectric properties of Ba5NdTi3Ta7O30 ceramics

The effects of La/Sn co-substitution for Ba/Ta were investigated for the modification of Ba₅NdTi₃Ta₇O₃₀ ceramics. The modified ceramics (Ba_5–x La _x )NdTi₃(Ta_7–x Sn _x )O₃₀ exhibited single tetragonal tungsten bronze phase for x<1.5, while a small amount of secondary phase BaTi₄O₉ was observed for x>1.5. The lattice constants decreased with increasing La/Sn content, while the axial ratio 10^1/2c/a decreased when x was below 1.5, then slightly increased. With increasing La and Sn content, the temperature coefficient of dielectric constant (at 1 MHz) was remarkably lowered from –1560 ppm/ °C to –286 ppm/ °C, while the dielectric constant gradually reduced, and the dielectric loss slightly increased. There were some clear relationships between the temperature coefficient and bond valence, tolerance factor: the temperature coefficient of dielectric constant linearly increased when the bond valence of the ions at B sites increased, while the same effect occurred when the tolerance factor decreased. In addition, the stability of the tetragonal tungsten bronze phase is discussed in relation to electronic difference and tolerance factor.     

Crystal structure and dielectric properties of La3+ substituted Ba5LaTi3Ta7O30 ceramics

The effects of La³⁺ partial substitution for Ba²⁺ on crystal structure and dielectric properties were investigated for modification of Ba₅LaTi₃Ta₇O₃₀ ceramics. When the substitution x > 0.6, the sintering temperature obviously decreased. Superstructure peaks were observed for more La³⁺ substitution (x ≥ 2.4). The stability of the tetragonal tungsten bronze phase was discussed with electronegativity difference and tolerance factor. Lattice parameters decreased at first, and then slightly increased; while axial ratio decreased with increasing La content. Dielectric constant slightly increased when x < 1.2, then gradually declined with the increase of La substitutions for Ba. Dielectric loss was very low except x = 2.4. Temperature coefficient of dielectric constant (at 1 MHz) was remarkably improved. The variation of dielectric properties was discussed from the change of crystal structure as well as the effects of vacancies at A-sites and superstructure.     

Microstructure and microwave dielectric characteristics of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics

(1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ (0.1 ≤ x ≤ 0.85) composites are prepared by mixing 1150 °C-calcined BaTi₄O₉ with 1150 °C-calcined Ba(Zn_1/3Ta_2/3)O₃ powders. The crystal structure, microwave dielectric properties and sinterabilites of the (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics have been investigated. X-ray diffraction patterns reveal that BaTi₄O₉, ordered and disordered Ba(Zn_1/3Ta_2/3)O₃ phases exist independently over the whole compositional range. The sintering temperatures of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics are about 1240 - 1320 °C and obviously lower than those of Ba(Zn_1/3Ta_2/3)O₃ ceramics. The dielectric constants (?_r) and the temperature coefficient of resonant frequency (τ_f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of BaTi₄O₉ content. Nevertheless, the bulk densities and the quality values (Q × f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of Ba(Zn_1/3Ta_2/3)O₃ content. The results are attributed to the higher density and quality value of Ba(Zn_1/3Ta_2/3)O₃ ceramics, the better grain growth, and the densification of sintered specimens added a small BaTi₄O₉ content. The (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramic with x = 0.1 sintered at 1320 °C exhibits a ?_r value of 31.5, a maximum Q × f value of 68500 GHz and a minimum τ_f value of 4.1 ppm/°C.     

Structure analysis on the Ba3Mg(Ta1−xNbx)2O9 ceramics: Coexistence of order and disorder

The Ba₃ZnTa₂O₉ (BZT) and Ba₃MgTa₂O₉ (BMT) ceramics, a family of A₃B²⁺B⁵⁺₂O₉ complex perovskites, are extensively utilized in mobile based technologies due to their intrinsic high unloaded quality factor, high dielectric constant and a low (near-zero) resonant frequency temperature coefficient at microwave frequencies. The preparation conditions as well as size and nature of B cations have a profound effect on the final dielectric properties. In this article, we report the effect of Nb⁵⁺ at the Ta⁵⁺ site on the BMT structure prepared at four synthesis temperatures (1300, 1400, 1500 and 1600 °C). The analysis has been carried out using the Rietveld technique on the X-ray powder diffraction data. Results suggest that both the preparation temperatures and Nb⁵⁺ content have significant effect on the ordering of B cations in the Ba₃Mg(Ta_1−xNb_x)₂O₉ solid solution. A disordered (cubic) structure is preferred by the 1300 °C compounds. The weight percentage of the ordered (trigonal) phase escalates, for a given composition, with increasing calcination temperature. A fully ordered trigonal arrangement exists only for x = 0.0 and 0.2 compounds calcined at 1600 °C, and the rest are biphasic (cubic and trigonal). The increase in the cubic fraction upon Nb⁵⁺ augmentation suggests that the solid solution leans more toward the disordered structural arrangement of B²⁺ and B⁵⁺ cations.     

Phase evolution, bond valence and microwave characterization of (Zn1 − xNix)Ta2O6 ceramics

(Zn_1 − xNi_x)Ta₂O₆ ceramics have been prepared via conventional mixed oxide route. The phase evolution and microstructure of (Zn_1 − xNi_x)Ta₂O₆ ceramics were investigated. The Raman spectroscopy was used to confirm the minor phase formation. The bond valence of (Zn_1 − xNi_x)Ta₂O₆ ceramics was calculated to evaluate the relation between bond valence and the microwave properties. The effects of Ni²⁺ ionic substitution on microwave dielectric properties of (Zn_1 − xNi_x)Ta₂O₆ ceramics were discussed. The dielectric constant and temperature coefficient of resonant frequency of (Zn_1 − xNi_x)Ta₂O₆ ceramics were depended upon phase composition and bond valence. The Q × ? was not significantly different for all levels of Ni²⁺ ionic concentration.     

Study on properties of BaxSmyTi7O20 ceramics with CaO-SiO2-B2O3 glass

The effect of CaO-SiO₂-B₂O₃ (CSB) glass addition on the sintering temperature and dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics has been investigated using X-ray diffraction, scanning electron microscopy and differential thermal analysis. The CSB glass starts to melt at about 970 °C, and a small amount of CSB glass addition to Ba_xSm_yTi₇O₂₀ ceramics can greatly decrease the sintering temperature from about 1350 to about 1260 °C, which is attributed to the formation of liquid phase. It is found that the dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics are dependent on the amount of CSB glass and the microstructures of sintered samples. The product with 5 wt% CSB glass sintered at 1260 °C is optimal in these samples based on the microstructure and the properties of sintering product, when the major phases of this material are BaSm₂Ti₄O₁₂ and BaTi₄O₉. The material possesses excellent dielectric properties: ?_r = 61, tan δ = 1.5 × 10⁻⁴ at 10 GHz, temperature coefficient of dielectric constant is −75 × 10⁻⁶ °C⁻¹.     

Preparation, structure and dielectric properties of Ba4LaMNb3O15 (M = Ti, Sn ) ceramics

Two new cation-deficient hexagonal perovskites Ba₄LaMNb₃O₁₅ (M = Ti, Sn) ceramics were prepared by high temperature solid-state reaction route. The phase and structure of the ceramics were characterized by X-ray diffraction, scanning electron microscopy (SEM). The microwave dielectric properties of the ceramics were studied using a network analyzer. The Ba₄LaTiNb₃O₁₅ has high dielectric constant of 52, high quality factors (Q) 3500 (at 4.472 GHz), and temperature variation of resonant frequency (τ_f) +93 ppm °C⁻¹ at room temperature; Ba₄LaSnNb₃O₁₅ has dielectric constant of 39 with high Q value of 2510 (at 5.924 GHz), and τ_f −29 ppm °C⁻¹.     

Optimized microwave dielectric properties of Co- and Ca-substituted Mg0.6Zn0.4TiO3

The system of (1 − y)(Mg_0.6Zn_0.4)_1−xCo_xTiO₃-yCaTiO₃ was investigated to optimize its microwave dielectric properties by adopting appropriate contents of Co and Ca and by controlling sintering conditions. The effect of Co substitution was to enhance densification and Qf value, while the addition of CaTiO₃ resulted in increases of dielectric constant and TCF. As an optimal compositions, 0.93(Mg_0.6Zn_0.4)_0.95Co_0.05TiO₃-0.07CaTiO₃ successfully demonstrated a dielectric constant of 23.04, a Qf of 79,460 GHz and a TCF value of +1.4 ppm/°C after firing at a relatively lower sintering temperature of 1200 °C. The increase of sintering temperature beyond 1200 °C tended to degrade overall microwave dielectric properties presumably due to Zn volatilization as evidenced by the presence of a Zn-deficient phase (MgTi₂O₅) at 1400 °C. An attempt to establish the correlation between microstructure characteristics and dielectric properties was made in this dielectric system where the extensive range of firing temperature up to 1400 °C was evaluated.     

Effect of La/Sn co-substitution for Ba/Ta on crystal structure and dielectric properties of Ba5NdTi3Ta7O30 ceramics

The effects of La/Sn co-substitution for Ba/Ta were investigated for the modification of Ba₅NdTi₃Ta₇O₃₀ ceramics. The modified ceramics (Ba_5?x La _x )NdTi₃(Ta_7?x Sn _x )O₃₀ exhibited single tetragonal tungsten bronze phase for x<1.5, while a small amount of secondary phase BaTi₄O₉ was observed for x>1.5. The lattice constants decreased with increasing La/Sn content, while the axial ratio 10^1/2c/a decreased when x was below 1.5, then slightly increased. With increasing La and Sn content, the temperature coefficient of dielectric constant (at 1 MHz) was remarkably lowered from ?1560 ppm/ °C to ?286 ppm/ °C, while the dielectric constant gradually reduced, and the dielectric loss slightly increased. There were some clear relationships between the temperature coefficient and bond valence, tolerance factor: the temperature coefficient of dielectric constant linearly increased when the bond valence of the ions at B sites increased, while the same effect occurred when the tolerance factor decreased. In addition, the stability of the tetragonal tungsten bronze phase is discussed in relation to electronic difference and tolerance factor.     

Microstructure and electrical properties of Ba0.7Sr0.3(Ti1 − xZrx)O3 thin films prepared on copper foils with sol-gel method

Ba_0.7Sr_0.3(Ti_1 − xZr_x)O₃ (x = 0, 0.1, 0.2) (BSZT) thin films have been prepared on copper foils using sol-gel method. The films were annealed in an atmosphere with low oxygen pressure so that the substrate oxidation was avoided and the formation of the perovskite phase was allowed. The X-ray diffraction results show a stable polycrystalline perovskite phase, with the diffraction peaks of the BSZT films shifting toward the smaller 2θ with increasing Zr content. Scanning electron microscopy images show that the grain size of the BSZT thin films decreases with increasing Zr content. High resolution transmission electron microscopy shows the clear lattice and domain structure in the film. The dielectric peaks of the BSZT thin films broaden with increasing Zr content. Leakage current density of Ba_0.7Sr_0.3(Ti_1 − xZr_x)O₃ (x = 0.1) thin film is the lowest over the whole applied voltage.     

Dielectric properties of B2O3-doped (1 − x)LaAlO3-xSrTiO3 ceramic system at microwave frequency

The effects of B₂O₃ addition on the microwave dielectric properties and the microstructures of (1−x)LaAlO₃-xSrTiO₃ ceramics prepared by conventional solid-state routes have been investigated. Doping with 0.25 wt.% B₂O₃ can effectively promote the densification and the microwave dielectric properties of (1−x)LaAlO₃-xSrTiO₃ ceramics. It is found that LaAlO₃-SrTiO₃ ceramics can be sintered at 1400°C due to the liquid phase effect of a B₂O₃ addition observed by scanning electronic microscopy (SEM). The dielectric constant as well as the Q×f value decreases with increasing B₂O₃ content. At 1460°C, 0.46LaAlO₃-0.54SrTiO₃ ceramics with 0.25 wt.% B₂O₃ addition possesses a dielectric constant (ε_r) of 35, a Q×f value of 38,000 (at 7 GHz) and a temperature coefficients of resonant frequency (τ_f) of −1 ppm/°C.     

Calcium-doping for enhanced temperature stability of (Ba0.6Sr0.4)1−xCaxTiO3 thin film dielectric properties

Ternary (Ba_0.6Sr_0.4)_1−xCa_xTiO₃ (BSCT) (x = 0, 0.1, 0.2, 0.3 and 0.4) thin films with thickness of around 500 nm were prepared on Pt(111)/TiO₂/SiO₂/Si substrates by sol-gel methods. BSCT forms the complete solid solutions in a single cubic perovskite structure. The lattice constant, dielectric constant, tanδ and tunability of BSCT decrease, whereas the temperature stability of dielectric properties increases with increasing the Ca concentration. From 25 to 100 °C, the decrease of tunability is about 11% for BSCT with 40 at.% of Ca. BSCT thin films exhibit the comparable tunability, low loss and enhanced temperature stability.     

Dependence of optical properties on the composition of (Ba1−x−ySrxEuy)Si2O2N2 phosphors for white light emitting diodes

BaSi₂O₂N₂: Eu²⁺ is an efficient phosphor because of its high quantum yield and quenching temperature. Partial substitution of Ba²⁺ by Sr²⁺ is the most promising approach to tune the color of phosphors. In this study, a series of (Ba_1−x−ySr_xEu_y)Si₂O₂N₂ (x = 0.0–0.97, y = 0.00–0.10) phosphors are synthesized via high-temperature solid-state reactions. Intense green to yellow phosphors can be obtained by the partial substitution of the host lattice cation Ba²⁺ by either Sr²⁺ or Eu²⁺. The luminescent properties and the relationships among the lowest 5d absorption bands, Stokes shifts, centroid shifts, and the splitting of Eu²⁺ are studied systematically. Then, based on (Ba_1−x−ySr_xEu_y)Si₂O₂N₂ phosphors and near-ultraviolet (∼395 nm)/blue (460 nm) InGaN chips, intense green–yellow light emitting diodes (LEDs) and white LEDs are fabricated. (Ba_0.37Sr_0.60)Si₂O₂N₂: 0.03Eu²⁺ phosphors present the highest efficiency, and the luminous efficiency of white LEDs can reach 17 lm/w. These results indicate that (Ba_1−x−ySr_xEu_y)Si₂O₂N₂ phosphors are promising candidates for solid-state lighting.     

Ferroelectric properties of lithia-doped (Bi0.95Na0.75K0.20)0.5Ba0.05TiO3 ceramics

Lead-free piezoelectric (Bi_0.95Na_0.75K_0.20−xLi_x)_0.5Ba_0.05TiO₃ ceramics have been prepared by conventional process for different lithium substitutions. The SEM images show that the ceramics are well sintered at 1428 K. Dielectric and ferroelectric measurements have been performed. With the increasing of lithium substitution, the Curie temperature of the (Bi_0.95Na_0.75K_0.20−xLi_x)_0.5Ba_0.05TiO₃ ceramics shifts from 570 K to 620 K, but the maximum value of the dielectric constant decreases from 6700 to 4700 correspondingly. A relatively larger remanent polarization of 36.8 μC/cm² has been found in the x = 0.05 sample. The coercive field decreases as the lithium substitution amount increases. An optimized d₃₃ = 194 × 10^− 12 C/N and a relative dielectric constant ε_r = 1510 have been obtained in (Bi_0.95Na_0.75K_0.15Li_0.05)_0.5Ba_0.05TiO₃.     

Low loss Sr1−xCaxLa4Ti5O17 microwave dielectric ceramics

Microwave dielectric ceramics in the Sr_1−xCa_xLa₄Ti₅O₁₇ (0 ≤ x ≤ 1) composition series were prepared through a solid state mixed oxide route. All the compositions formed single phase ceramics within the detection limit of in-house X-ray diffraction when sintered in the temperature range 1450-1580 °C. Theoretical density and molar volume decreased due to the substitution of Ca²⁺ for Sr²⁺ which was associated with a decrease in the dielectric constant (?_r) and temperature coefficient of resonant frequency (τ_f) but an increase in quality factor, Qf_o. Optimum properties were achieved for Sr_0.4Ca_0.6La₄Ti₅O₁₇ which exhibited, ?_r ∼ 53.7, Qf_o ∼ 11,532 GHz and τ_f ∼ −1.4 ppm/°C.     

Structure, dielectric and ferroelectric anisotropy of Sr2−xCaxBi4Ti5O18 ceramics

Sr_2−xCa_xBi₄Ti₅O₁₈(x = 0, 0.05) powders synthesized by solid state route were uniaxially pressed and sintered at 1225 °C for 2 h. The obtained dense ceramics exhibited crystallographic anisotropy with a dominant c axis parallel to the uniaxial pressing direction which was quantified in terms of the Lotgering factor. Microstructure anisotropy of both compositions (x = 0, 0.05) consisted of plate like grains exhibiting their larger surfaces mostly perpendicular to the uniaxial pressing direction. Dielectric and ferroelectric properties of Sr_2−xCa_xBi₄Ti₅O₁₈ ceramics were measured under an electric field (E) applied parallel and perpendicularly to uniaxial pressing direction. The obtained dielectric ?_R(T) and polarization (P-E) curves depended strongly on E direction thus denoting a significant effect from microstructure and crystallographic texture. Sr_2−xCa_xBi₄Ti₅O₁₈ properties were also significantly affected by Ca content (x): Curie temperature increased from 280 °C (x = 0) to 310 °C (x = 0.05) while ?_R and remnant polarization decreased for x = 0.05. The present results are discussed within the framework of the processing and crystal structure-properties relationships of Aurivillius oxides ceramics.     

Synthesis, structure and dielectric characterization of Ln2Ti2−2xM2xO7(Ln=Gd, Er; M=Zr, Sn, Si)

The progress in wireless communications and information access has demanded the use of electronic ceramics exhibiting desired properties. To further our understanding of these properties, compounds in the Ln₂Ti_2-2xM_2xO₇ (Ln=Gd, Er; M=Zr, Sn, Si) systems were synthesized by ceramic methods and characterized by powder X-ray diffraction. The ZrO₂-doped Gd₂Ti_2−2xZr_2xO₇ compounds adopt the pyrochlore structure type and form a complete solid solution. Er₂Ti_2−2xZr_2xO₇ forms a pyrochlore solid solution for x<0.1. However, stoichiometric Er₂Zr₂O₇ does not form; instead Er₄Zr₃O₁₂ forms a with defect fluorite structure. The Sn-doped Ln₂Ti_2−2xSn_2xO₇ (Ln=Gd, Er) compounds form complete solid solutions, and the Si compounds adopt the pyrochlore structure up to x=0.05. At ambient temperature, dielectric constants range from 10 to 61 for Er₂Ti_2−2xZr_2xO₇ and 16-31 for Gd₂Ti_2−2xZr_2xO₇ with low dielectric loss (1×10⁻³) at 1 GHz.     

Effect of Nb substitution on the structural, dielectric and magnetic properties of multiferroic BiFe1−xNbxO3 ceramics

Polycrystalline BiFe_1−xNb_xO₃ ceramics have been synthesized by standard solid-state reaction method. The effect of Nb substitution on the dielectric, magnetic and magnetoelectric properties of the BiFeO₃ multiferroic perovskite was studied. X-ray diffraction pattern revealed that all the samples with x = 0.00-0.10 showed rhombohedral perovskite structure. We obtained single phase upto doping concentration of x = 0.05 and with further increase in Nb concentration, some impurity peaks appeared. An anomaly in the dielectric constant (?) and dielectric loss (tan (δ)) in the vicinity of the antiferromagnetic Néel temperature (T_N) was observed. Nb substitution reduced the antiferromagnetic Néel temperature (T_N) in BiFe_1−xNb_xO₃. Proper amount of Nb could decrease the dielectric loss. Magnetic hysteresis loops measured at 5 K/300 K and temperature dependent magnetization curves indicated ferromagnetism in Nb substituted BiFeO₃ ceramics. The room temperature magnetic moment was found to increase with increase in Nb concentration. The dependence of dielectric constant on the magnetic field is an evidence of magnetoelectric coupling in BiFe_1−xNb_xO₃ ceramics.