共查询到18条相似文献,搜索用时 97 毫秒
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Zheng Zhongshan Liu Zhongli Zhang Guoqiang Li Ning Li Guohu Ma Hongzhi Zhang Enxi Zhang Zhengxuan Wang Xi 《半导体学报》2005,26(5):862-866
为了提高SIMOX(separation-by-implanted-oxygen)SOI(silicon-on-insulator)结构中埋氧层(BOX)的总剂量辐射硬度,埋氧层中分别注入了2×1015和3×1015cm-2剂量的氮.实验结果表明,在使用Co-60源对埋氧层进行较低总剂量的辐照时,埋氧层的总剂量辐射硬度对注氮剂量是非常敏感的.尽管埋氧层中注氮剂量的差别很小,但经5×104 rad(Si)剂量的辐照后,注入2×1015cm-2剂量氮的埋氧层表现出了比未注氮埋氧层高得多的辐射硬度,而注入3×1015cm-2剂量氮的埋氧层的辐射硬度却比未注氮埋氧层的辐射硬度还低.然而,随辐照剂量的增加(从5×104到5×105rad(Si)),这种埋氧层的总剂量辐射硬度对注氮剂量的敏感性降低了.采用去掉SOI顶硅层的MOS高频C-V技术来表征埋氧层的总剂量辐射硬度.另外,观察到了MSOS(metal-silicon-BOX-silicon)结构的异常高频C-V曲线,并对其进行了解释. 相似文献
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近几年来,SOI(silicon on Insulator)材料因用于制备抗辐照、高速CMOS电路及三维集成电路等受到人们越来越多的关注。在各种SOI技术中,离子注入形成SOI材料有其独到的优点,制备工艺简单方便,可获得高质量的表层单晶硅。本文以XTEM研究大束流,高剂量的氮离子或氧离子注入单晶硅形成的SOI材料,用于确定表面层硅的辐照损伤和氮化硅或氧化硅埋层剖面的显微结构。注N~+SOI试样的制备,采用Φ50毫米的硅晶片(n型、3~6Ωcm,<110>)注入能量为190kev,剂量为1.8×10_1~(18)N~+/厘米~2,N~+束流密度为50微安/厘米~2.注入后试样表面利用CVD方法淀积350纳米 相似文献
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SIMOX埋氧层的总剂量辐射硬度对埋氧层中注氮剂量的敏感性 总被引:2,自引:0,他引:2
为了提高SIMOX(separation-by-implanted-oxygen)SOI(silicon-on-insulator)结构中埋氧层(BOX)的总剂量辐射硬度,埋氧层中分别注入了2×1015和3×1015cm-2剂量的氮.实验结果表明,在使用Co-60源对埋氧层进行较低总剂量的辐照时,埋氧层的总剂量辐射硬度对注氮剂量是非常敏感的.尽管埋氧层中注氮剂量的差别很小,但经5×104 rad(Si)剂量的辐照后,注入2×1015cm-2剂量氮的埋氧层表现出了比未注氮埋氧层高得多的辐射硬度,而注入3×1015cm-2剂量氮的埋氧层的辐射硬度却比未注氮埋氧层的辐射硬度还低.然而,随辐照剂量的增加(从5×104到5×105rad(Si)),这种埋氧层的总剂量辐射硬度对注氮剂量的敏感性降低了.采用去掉SOI顶硅层的MOS高频C-V技术来表征埋氧层的总剂量辐射硬度.另外,观察到了MSOS(metal-silicon-BOX-silicon)结构的异常高频C-V曲线,并对其进行了解释. 相似文献
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通过对赝MOS进行不同剂量的辐射,得到不同辐射条件下赝MOS器件的I-V特性曲线,并通过中带电压法进行分析,得出在不同辐射下SOI材料的埋氧层中产生的陷阱电荷密度和界面态电荷密度参数。采用这些参数并结合Altal三维器件模拟软件模拟了硅鳍(FIN)宽度不同的三栅FET器件的总剂量辐射效应,分析陷阱电荷在埋氧层的积累和鳍宽对器件电学特性的影响。 相似文献
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在结合低剂量注氧隔离(SIMOX)技术和键合技术的基础上,研究了制备薄膜(薄顶层硅膜)厚埋层SOI材料的新技术--注氧键合技术.采用该新技术成功制备出薄膜厚埋层SOI材料,顶层硅厚度130nm,埋氧层厚度lμm,顶层硅厚度均匀性±2%.并分别采用原子力显微镜(AFM)和剖面透射电镜(XTEM)对其表面形貌和结构进行了表征.研究结果表明,SIMOX材料顶层硅通过键合技术转移后仍能够保持其厚度均匀性,且埋氧层和顶层硅之间具有原子级陡峭的分界面,因此注氧键合技术将会是一项有广阔应用前景的SOI制备技术. 相似文献
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在结合低剂量注氧隔离(SIMOX)技术和键合技术的基础上,研究了制备薄膜(薄顶层硅膜)厚埋层SOI材料的新技术--注氧键合技术.采用该新技术成功制备出薄膜厚埋层SOI材料,顶层硅厚度130nm,埋氧层厚度lμm,顶层硅厚度均匀性±2%.并分别采用原子力显微镜(AFM)和剖面透射电镜(XTEM)对其表面形貌和结构进行了表征.研究结果表明,SIMOX材料顶层硅通过键合技术转移后仍能够保持其厚度均匀性,且埋氧层和顶层硅之间具有原子级陡峭的分界面,因此注氧键合技术将会是一项有广阔应用前景的SOI制备技术. 相似文献
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To harden silicon-on-insulator (SOI) wafers fabricated using separation by implanted oxygen (SIMOX) to total-dose irradiation, the technique of nitrogen implantation into the buried oxide (BOX) layer of SIMOX wafers can be used. However, in this work, it has been found that all the nitrogen-implanted BOX layers reveal greater initial positive charge densities, which increased with increasing nitrogen implantation dose. Also, the results indicate that excessively large nitrogen implantation dose reduced the radiation tolerance of BOX for its high initial positive charge density.The bigger initial positive charge densities can be ascribed to the accumulation of implanted nitrogen near the Si-BOX interface after annealing. On the other hand, in our work, it has also been observed that, unlike nitrogen-implanted BOX, all the fluorine-implanted BOX layers show a negative charge density. To obtain the initial charge densities of the BOX layers, the tested samples were fabricated with a metal-BOX-silicon (MBS) structure based on SIMOX wafers for high-frequency capacitance-voltage (C-V) analysis. 相似文献
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Kajiwara K. Nakajima Y. Hanajiri T. Toyabe T. Sugano T. 《Electron Devices, IEEE Transactions on》2008,55(7):1702-1707
We characterized the distribution of trap states in silicon-on-insulator (SOI) layers in epitaxial layer transfer (ELTRAN) wafers and in low-dose separation by implanted oxygen (SIMOX) wafers. We measured the front- and back-gate characteristics of MOSFETs with SOI layers of different thicknesses. We used the current-Terman method to estimate the trap states at the gate oxide (GOX)/SOI interface and at the SOI/buried oxide (BOX) interface separately. As a result, we concluded that the high-density trap states in the SOI layers in SIMOX wafers cause a gate-voltage shift, which is attributed to the charged trap states only in the inversion layer. We also found that the trap states are distributed within about 30 nm from the SOI/BOX interface in the SOI layer in SIMOX wafers, which indicates that the distribution of trap states originates from the oxygen implantation that is peculiar to the SIMOX process. 相似文献
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Enxia Zhang Jiayin Sun Jing Chen Zhengxuan Zhang Xi Wang Ning Li Guoqiang Zhang Zhongli Liu 《Journal of Electronic Materials》2005,34(11):L53-L56
In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation
hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen
ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the
nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors
were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super
total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor
field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The
optimum implantation energy was also determined. 相似文献
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利用RBS和TEM技术分析研究了不同注入剂量、注入方式(单重注入,多重注入)对SIMOX材料各层结构的影响,特别着重研究了Si/SiO2界面过渡区受注入条件的影响。结果表明,在注入剂量相同的情况下,多重注入不仅能改善顶层单晶、SiO2绝缘层的质量,而且能显著减小Si/SiO2界面过渡区宽度。 相似文献