Phonon-assisted deep level luminescence in heavily Mg-doped InGaN

Deep level luminescence in In_0.07Ga_0.93N:Mg was examined. A strong photoluminescence (PL) band at 2.45 eV was observed with a well-resolved fine structure that was attributed to phonon-assisted donor-acceptor pair (DAP) recombination. Analysis of the fine structure reveals a large Huang-Rhys parameter of 6.5 for this DAP band, indicating strong localization of carriers at DAP centers. From the phonon replicas, the longitudinal-optical (LO) phonon energy was determined to be 105 meV. The large, measured phonon energy was attributed to the large compressive strain caused by compositional fluctuations in the films.     

Polaronic effects on the collective excitation energies in a quantum wire

In this work we report a investigation of the plasmon–longitudinal-optical (LO) phonon interaction effects on the intersubband and intrasubband collective excitation energies in a GaAs–Al_νGa_1?νAs rectangular quantum well wire. We observe a resonant split of the collective excitation energy into two branches, one with energy lower and other with energy higher than the LO-optical phonon energy ?ω_LO. Our calculations are performed using a self-consistent field approximation, which includes the local-field correction within the Singwi, Tosi, Land, and Sjolander (STLS) theory at zero temperature and assuming a three-subband model, where only the first subband is occupied by electrons. The potential confining effects on the collective energies were also considered.     

Optical properties of undoped and iodine-doped CdTe

A comprehensive study of the properties of undoped and iodine-doped CdTe structures by photoluminescence (PL) and photoreflectance (PR) is reported. Undoped bulk CdTe and iodine-doped CdTe layers grown by metalorganic molecular beam epitaxy on (lOO)-oriented CdTe and (211)B-oriented GaAs substrates with electron concentrations ranging from 10¹⁴ to mid-10¹⁸ cm^-3 were included in this study. Lineshape modeling of 80KPL and PR spectra indicated the presence of both free exciton and donor-hole transitions at the higher doping levels. Strong PL and PR signals were also observed at room temperature. If only a single transition is considered for the analysis of the 300K spectra, the PL emission peak and the PR transition energy both exhibit a strong dependence on electron concentration for doped layers. However, lineshape modeling of the room-temperature spectra indicated the presence of multiple transitions consisting of free exciton and direct band-to-band transitions. The use of two transitions resulted in a constant value of bandgap over the entire range of conductivities studied. A strong correlation remained between the broadening of the PR and PL spectra and excess carrier concentration N_D-N_A. In addition, the E₁ transition energy measured by PR was found to vary dramatically with growth conditions.     

AlxGa1-xAs/GaAs异质结中电子迁移率的压力效应

对Al_xGa_1-xAs/GaAs半导体单异质结系统,引入有限高势垒与考虑导带弯曲的真实势，同时计入电子对异质结势垒的隧穿，利用变分法和记忆函数方法讨论在界面光学声子和体纵光学声子的散射下，异质结界面附近电子迁移率随温度的变化关系及其压力效应.结果显示：电子迁移率随温度、压力的增加而减小；且两种声子的散射作用均随压力增强，界面光学声子的变化幅度更大.因此，在讨论压力的情形下，界面光学声子的作用不容忽略.     

Changes in the spectra of picosecond stimulated emission from GaAs accompanied by signs of electron-phonon interaction

A nonmonotonic variation in the width of the emission spectra ?????_s of GaAs as the energy of the pump photon ???_ex is varied is observed at a fixed energy of a picosecond pump pulse W _ex giving rise to intrinsic stimulated emission. In the case of this nonmonotonic variation, the largest width of the spectra has been found to be close to the parameter ??, which is determined by the energy of a longitudinal optical (LO) phonon and by the masses of an electron and a heavy hole. As the nonmonotonicity of the dependence ?????_s = f(???_ex) becomes more pronounced, modulation of this dependence and the dependence of the spectrum amplitude on ???_ex are observed. The modulation features signs of relation to the electron-LO-phonon interaction. The observed evolution of the modulation is not inconsistent with published suggestions concerning the development and destruction of screening of the electron-LO-phonon interaction in the case of a dense electron-hole plasma. The level of radiation losses in the sample affects the modulation and nonmonotonicity.     

Systematic optical and x-ray study of In x Ga1−x As on InP

We present a systematic study of In _x Ga_1−x As on InP grown by molecular beam epitaxy using the characterization techniques of Fourier transform photoluminescence, x-ray diffraction, micro-Raman spectroscopy, and photoreflectance spectroscopy. The four techniques were used to determine and correlate the fundamental parameters of band-gap energy, phonon frequency and composition. Comparing room temperature (293 K) PL and low temperature PL indicate the presence of a partially ionized acceptor with binding energy of about 13 meV in the unintentionally doped material. Double crystal x-ray diffraction (XRD) using a symmetric <400> and asymmetric <224> reflections was also employed. The use of two reflections gives precise lattice constants, composition, and extent of film relaxation. Micro-Raman spectroscopy was used to measure phonon frequencies in the In _x Ga_1−x As films and correlated to XRD composition. Room temperature photoreflectance (PR) was used to determine band-gap energy for both the low and intermediate field cases. Band gap energies determined at room temperature by PL and PR were in agreement within experimental error.     

Raman spectra of CdTe/ZnTe self-assembled quantum dots

In this paper, we present Raman scattered spectra and results of photoluminescence (PL) measurements of CdTe/ZnTe self-assembled quantum dots (SAQD). The PL spectrum displayed two main emission peaks, both connected with the existing of QDs. One presents direct deexcitation to ground state and the other is optical phonon (ω=204.2 cm^?1)-assisted deexcitation. The registered multiphonon (MP) emission process depends on temperature. At low temperature, one-phonon spectra shows line at 200.4 and 210.3 cm^?1 (ZnTe LO mode confined by degenerate superlattices), 217 cm^?1 (TA+LO in ZnTe) and 386 cm^?1 (LO+TO(Γ) in ZnTe).     

Electrical and photoluminescence properties of Ge-doped n-type GaAs Grown by molecular beam epitaxy

Ge-doped n-type MBE GaAs has been studied for the doping range 6.7 × 10¹⁵ to 1.5 × 10²⁰cm^-3 and the compensation ratio inferred from the mobility variation with free-carrier concentration. The doping achieved for a given Ge source temperature is an order of magnitude greater than generally reported and this is attributed to use of a source of large surface area. Photoluminescence studies at 4°K for lightly doped specimens show the usual bound exciton, band-to-C_AS and band-to-Ge_AS peaks and their LO phonon replicas. However, with Ge doping exceeding 10¹⁸cm^-3 broad deep-level peaks develop centered at 1.3257 eV moving towards 1.255 eV, with half widths of about 115 meV. Whether these peaks are related to the broad-band photoluminescence centered at 1.20 eV (20°K) that has been reported earlier for Ge doped Bridgmangrown and epitaxially vapor grown GaAs, is not known. Since the energy displacement is considerable, it is possible that the centers responsible differ in the MBE grown material.     

High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures

Transport properties of the two-dimensional electron gas (2DEG) in fully strained and partially strain-relaxed Al_0.22Ga_0.78N/GaN heterostructures at temperatures from 300 to 680 K have been investigated by Hall effect measurements. The 2DEG mobility was found to decrease rapidly with increasing temperature at the initial stage and then decrease slowly as temperature is further increased. Those features indicate strongly that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures. Meanwhile, the calculated results show that more electrons transfer to the higher-order sub-bands with increasing temperature, and hence the effect of screening on LO phonon scattering is weakened and the alloy scattering of the AlGaN layer on the 2DEG becomes stronger. Thus variation of 2DEG occupation in different sub-bands with increasing temperature also decreases mobility of the 2DEG.     

Exciton recombination in δ-doped type-II GaAs/AlAs superlattices

Radiative recombination of excitons in δ-doped type-II GaAs/AlAs superlattices (SLs) is studied experimentally. With an increase in the impurity density in δ-layers from 2×10¹⁰ to 7.5×10¹¹ cm^?2, the integrated intensity of SL photoluminescence (PL) decreases by a factor of 4–6; the intensity of excitonic PL drops considerably (up to 70–80 times), which is accompanied by an increase in the exciton radiative decay rate. Uniform doping of the SL does not result in the exciton PL quenching. Analysis of the temperature dependence and the kinetics of the PL indicate that impurity quenching of the excitonic PL in δ-doped structures is not related to a reduction in the exciton localization energy and cannot be explained by an increase in the density of nonradiative recombination centers. We conclude that the PL quenching is mainly caused by the appearance of built-in electric fields originating from ionized impurities, which hinders the formation of the excitons.     

Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy

Concentration of 2D electrons n _s is measured in the modulation-doped PHEMT structures with the aid of two photoluminescence (PL) methods using halfwidth of the 1e-1hh band and the energy difference E _F-E _1e in the experimental PL spectra. The applicability of the methods is analyzed, and a method for the determination of energy E _F from the temperature dependence of the intensity ratio of the 2e-1hh and 1e-1hh bands is proposed. It is demonstrated that concentrations n _s are in good agreement with the results of the Hall-effect measurements at relatively low concentrations (n _s ≤ 2.5 × 10¹²) when the parallel conduction along the δ layer is absent. At stronger doping, the PL methods yield more accurate concentrations n _s .     

Luminescent properties of BexCd1−xSe thin films

We report photoluminescence (PL) study of Be_xCd_1−xSe epitaxial layers (x<0.21) grown by molecular beam epitaxy on InP substrates. Continuous wave PL spectra are taken within a 4.2-300 K temperature range. We observe an anomalous ‘s-shaped’ temperature dependence of emission energy and a severe decrease of emission intensity with the increase of temperature. We explain an ‘s-shaped’ temperature dependence of emission energy by exciton localization in the potential minima at low temperatures followed by thermal activation at higher temperatures. We attribute low emission intensity at high temperatures to exciton dissociation and electron/hole migration to non-radiative recombination centers.     

Temperature dependence of the photoluminescence energy of CdTe/ZnTe heterostructures

The photoluminescence (PL) energy was calculated for the heterostructure CdTe/ZnTe, where the emission is based on quantum confinement. This system was studied because it yields a high-intensity emission, covering a wide range of the visible spectrum wavelengths. Our calculations obtained the energy of the fundamental state for electrons and holes, as well as the PL energy using both the Varshni and Manoogian–Woolley formalisms taking into consideration the effects of strain. The Varshni and M–W formalisms for the study of the band gap energy as a function of the temperature differ for high- and low-temperature values. This is because the M–W model takes into account the thermal dilatation and electron–phonon interaction through the U and V parameters. The calculations used quantum wells based on the CdTe/ZnTe heterostructure with different thicknesses (number of monolayers) and involved analyzing the dependence on the thickness and barrier height. The aims of this study were analyzing how the shift occurs in the emission color while increasing of the quantum-well width, and studying the temperature dependence of two different formalisms. The PL energy as a function of the quantum well thickness presents an inflection point at around five monolayers, which is in agreement with reports regarding the critical thickness of heterostructure CdTe/ZnTe. This inflection point is modified when the strain in the heterostructure is taken into account.     

Temperature dependence of the photoluminescence properties and band gap energy of InxGa1−xAs/GaAs quantum wells

The effective band gap energy of In_xGa_1−xAs/GaAs strained quantum wells (QWs) is investigated by photoluminescence spectroscopy (PL) in the range 12–295 K. The temperature dependence of the band gap energy of strained QWs correlates well with that of bulk In_xGa_1−xAs of similar composition. Deviations from the band gap variation of bulk material at low temperatures (12–90 K) are interpreted in terms of exciton localization. The differences ΔE(12 K) between the measured PL peak energies and the expected transition energies at 12 K (obtained by simulating the measured temperature dependence of the PL peak positions by the well-known Varshni relation) are suggested to be closely related to the Stokes shifts that often exist between PL and PL excitation spectra of QWs. A linear relation is found between the PL full-width at half-maximum measured at 12 K and ΔE for a range of QWs prepared under different growth conditions. Excitonic recombination is inferred to be dominant in the PL transitions at the highest temperatures investigated—even at room temperature.     

Are transverse phonons important for Γ - X-intervalley scattering?

We employ the rigid pseudo-ion method to calculate the q-dependence of intervalley deformation potentials for GaP from the Γ-point to the X-valley. We find that the fast transverse acoustic phonon (which cannot couple to the symmetry point X) becomes as important along the XW-direction as the longitudinal acoustic phonon (which is allowed at X). We have measured the temperature dependence of the lifetime broadenings of the E₀-gap of GaP with spectroellipsometry in order to obtain an effective intervalley phonon energy from which the relative contributions of the different phonon branches can be determined, but difficulties arise as intervalley and intravalley (Fröhlich) exciton-phonon interaction both contribute to the broadenings.     

静压下（CdSe）_m／（ZnSe）_n－ZnSe超短周期超晶格量子阱的共振喇曼散射研究

在静压和液氮温度下观察到（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中重空穴激子的复合发光和多达４阶的类ＺｎＳｅＬＯ多声子喇曼散射，并观察到厚ＺｎＳｅ势垒层的带边发光和限制在厚势垒层中的类ＺｎＳｅＬＯ声子散射．结果表明，加压后（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中的类ＺｎＳｅ的１ＬＯ和２ＬＯ声子模频率分别以３．７６和７．１１ｃｍ－１／ＧＰａ的速率向高频方向移动，超晶格阱层光致发光峰的压力系数为５９．８ｍｅＶ／ＧＰａ．与（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格共振时的类ＺｎＳｅ１ＬＯ声子模频率比与ＺｎＳｅ势垒层共振时的类ＺｎＳｅ１ＬＯ声子模频率低２．０ｃｍ－１，反映了（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中ＬＯ声子的限制效应     

有限温度及任意磁场强度下量子阱中的磁极化子(英文)

Taking into account the interaction of an electron with both bulk longitudinal-optical and surface longitudinal-optical phonons, we study the temperature dependence of the properties of a magnetopolaron in a quantum well in arbitrary magnetic field strength at a finite temperature. It is indicated that the temperature dependence of the self-trapping energies of the magnetopolaron is tremendously related to the strength of the magnetic field. The results also show that the electron-surface LO phonon interaction as well as the electron-bulk LO phonon interaction play important roles, especially when the quantum well width is getting thinner.     

Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well

The effect of the electron-phonon interaction on the third-harmonic is investigated theoretically for electrons confined in a core-shell quantum dot. The interactions of electrons with different phonon modes in the core-shell system, including the confined longitudinal optical (LO) and the interface optical (IO) phonon modes, are investigated. We carried a detailed calculation of third-harmonic generation (THG) process on a ZnS/CdSe core-shell quantum dot as a function of pump photon energy with different incident photon energy and under different sizes. The results reveal that the polaron effects are quite important especially around the peak value of the third-order susceptibility. By increasing the size of the quantum dots, the peaks of χ_THG⁽³⁾ will shift to lower energy, and the intensities of the peaks will increase.     

Photoluminescence of V-doped GaN thin films grown by MOVPE technique

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue band (BB) in the 2.6 eV range. This BB emission is very strong and its intensity increases with increasing V doping level. We also observed that the peak position of the blue luminescence shifted at lower energy with decreasing excitation density. Upon V-doping, the yellow luminescence band shows a drastic reduction in integrated intensity. This observation is explained by a reaction involving V and gallium vacancy (_√Ga). PL spectra at low temperature exhibited a series of peaks. The donor-acceptor (D-A) pair emission peak at 3.27 eV was strongly pronounced, as the temperature was decreased. On the other hand, the intensity of the BB emission decreased. This BB emission is due to a radiative transition from a shallow donor with a depth of 29 meV to a deep acceptor with a depth of 832 meV.     

ZnMgSe/ZnCdSe多量子阱的光学性质

通过光致发光 (PL)和拉曼 (Raman)光谱研究了分子束外延 (MBE)生长的 Zn Mg Se/ Zn Cd Se多量子阱的光学性质。在 80 K到 3 0 0 K温度范围内 ,观测到了 PL光谱中来自量子阱的自由激子发光 ,通过发光强度与温度的变化关系 ,计算了激子束缚能。结果表明在 Zn Mg Se/ Zn Cd Se多量子阱 (MQWs)势垒层中 ,Mg的引进增强了量子阱的限制效应 ,导致激子具有较好的二维特性。在室温下的 Raman光谱中观测到了多级纵光学声子(LO)和横光学声子 (TO)的限制模 ,表明多层结构具有较高的质量