纳米SiC-Al_2O_3/TiC多相陶瓷复合材料显微结构的研究

考察了纳米SiC -Al2 O3/TiC多相陶瓷复合材料的断裂方式 .由于纳米SiC的加入 ,材料以穿晶断裂为主 .通过透射电镜观察 ,研究了纳米陶瓷复合材料中纳米SiC的分布 ,证明所制备的材料主要为晶内型纳米复合陶瓷 .在纳米SiC -Al2 O3/TiC多相陶瓷复合材料中 ,少量纳米SiC位于基体晶粒间 ,大多数纳米SiC位于基体晶粒内 ,而且纳米SiC的加入细化了基体的晶粒 .通过高分辨透射电镜观察 ,研究了纳米SiC -Al2 O3/TiC多相陶瓷复合材料中 ,纳米SiC与基体间界面结合状态 ,发现在两颗粒间的晶界几乎没有玻璃相 ,证明纳米陶瓷复合材料中晶界得到了加强 ,有利于材料力学性能的提高 .另外研究了裂纹在材料中的扩展行为 ,结果表明 ,纳米粒子对裂纹的扩展起到偏折和钉扎作用     

TiB2-SiC复合粉末的碳热还原法合成及其表征

以TiO2、B4C、炭黑和硅溶胶为原料,采用碳热还原法合成了TiB2 -SiC超细复合粉末.对碳热还原反应过程进行了热力学分析和计算,采用XRD和SEM等研究了反应温度对合成TiB2-SiC复合粉末的物相组成和显微形貌的影响,并对合成的TiB2-SiC复合粉末的氧化性能进行了探讨.结果表明:TiB2-SiC复合粉末合成的适宜条件为在1600℃保温1h.在反应过程中,TiB2先于SiC形成,所合成的复合粉末由球状、片状、短棒状颗粒以及晶须等多样化结构组成.TiB2-SiC复合粉末的氧化过程中,首先是TiB2优先与氧发生反应生成TiO2和B2O3,然后是SiC与氧反应生成SiO2和CO,氧化产物中没有发现低熔点B2O3的存在.     

外加剂对Sialon/SiC复合材料结构的影响

本文以α-Al2O3微粉、金属硅粉、金属铝粉、SiC颗粒制备了Sialon/SiC复合材料,研究了不同外加剂对Sialon/SiC材料结构的影响。结果表明：制备的Sialon-SiC复合材料样品显微结构以SiC为主晶相,Sialon为次晶相,还有少量Si3N4和Al2O3,Sialon相晶体呈长剑状;外加Si3N4试样Sialon相为板带状,外加粘土试样Sialon相晶体呈现不规则粒状和短柱状。     

纳米SiC—Al2O3／TiC多相陶瓷复合材料显微结构的研究

考察了纳米SiC-Al2O3/TiC多相陶瓷复合材料的断裂方式,由于纳米SiC的加入,材料以穿晶断裂为主,通过透射电镜观察,研究了纳米陶瓷复合材料中纳米SiC的分布,证明所制备的材料主要为晶内型纳米复合陶瓷,在纳米SiC-Al2O3/TiC多相陶瓷复合材料中,少量纳米SiC位于基体晶粒间,大多数纳米SiC位于基体晶粒内,而且纳米SiC的加入细化了基体的晶粒,通过高分辨透射电镜观察,研究了纳米SiC－Al2O3/TiC多相陶瓷复合材料中,纳米SiC与基体间界面结合状态,发现在两颗粒间的晶界几乎没有玻璃相,证明纳米陶瓷复合材料中晶界得到了加强,有利于材料力学性能的提高,另外研究了裂纹在材料中的扩展行为,结果表明,纳米粒子对裂纹的扩展起到偏折和钉扎作用。     

热压烧结工艺制备SiC/B4C复合材料

以Si粉为烧结助剂,采用真空热压烧结工艺制备了SiC/B4C陶瓷基复合材料.研究了Si的加入和烧结压力对复合材料力学性能的影响.借助X射线衍射、扫描电镜分析了复合材料的物相组成和微观结构.研究结果表明:Si与B4C粉料中的游离碳反应,随后固溶到B4C晶体结构中.当Si质量百分含量为8%时,经18.50℃、60 MPa真空热压烧结的复合材料主晶相为B4.C、SiC,相对密度达到99.8%,断裂韧性和弯曲强度分别达到5.04 MPa·m1/2和354 MPa.复合材料力学性能的提高主要是由于烧结体的高致密度以及断裂方式的转变.     

外加剂对熔融石英陶瓷烧结性能的影响

为改善熔融石英陶瓷材料的低温烧结性能 ,选用石英玻璃粉为主要原料 ,研究了H3 BO3 、B4C、Si、SiC、CeO2 和Y2 O3 六种外加剂对熔融石英陶瓷烧结性能的影响。结果表明 :添加Si、SiC、CeO2和Y2 O3 时对熔融石英陶瓷的低温烧结的促进作用较小 ;H3 BO3 和B4C能有效地促进熔融石英陶瓷的烧结 ,加入相同量的H3 BO3 和B4C外加剂时 ,B4C对材料烧结性能的影响明显强于H3 BO3 。H3 BO3 的高温分解产物和B4C的氧化产物均为B2 O3 ,高温下B2 O3 能增加材料中的液相生成量 ,加快材料的扩散传质 ,从而促进材料的烧结。     

高能球磨和热压烧结制备SiC/Ti_3SiC_2复相陶瓷及其性能

以Ti,Si和C粉为主要原料,利用高能球磨及热压烧结制备了SiC/Ti3SiC2复相陶瓷。研究了工艺条件尤其是烧结温度和压力对合成产物相组成、微观结构及性能的影响,并结合X射线衍射、扫描电镜等检测结果探讨了Ti-Si-C体系反应合成机理。结果表明:通过高能球磨18h,在25MP和1300oC热压,可得到均匀、致密的SiC/Ti3SiC2复相陶瓷材料。Si含量对SiC/Ti3SiC2材料的相组成及性能有较大影响。起始原料中的Ti,Si,C和Al的质量比为3:1.2:2:0.2时,材料性能提高明显,其弯曲强度、断裂韧性、密度和相对密度分别为526.65MPa,8.67MPa·m1/2,4.058g/cm3,89.78%。显微结构的观察表明,SiC/Ti3SiC2复合材料的断裂具有沿晶和穿晶混合断裂特征。SiC颗粒增韧抑制了微裂纹在Ti3SiC基体中的扩展。     

CaO-B2O3-SiO2系微晶玻璃的低温烧结机理

研究了CaO-B2O3-SiO2系微晶玻璃的烧结过程、析晶机制、微观结构以及介电性能等。该材料能够在850℃的低温烧结，烧结体具有良好的介电性能（er=4.975,tgδ≤0.001,1GHz)。微观结构主要为75％－80％体积百分比的晶相（晶粒尺寸为50－100nm)，少量的残余玻璃相和气孔；主要晶相为CB（CaO.B2O3),C6S4(6CaO.4SiO2)和CS（CaO.SiO2)。该材料适用于高频电子元器件等领域。     

机床用Al_2O_3/TiB_2复相陶瓷刀具材料的研究

以α-Al2O3和TiB2为主要原料,采用真空热压烧结工艺制备机床用Al2O3/TiB2复相陶瓷刀具材料。测试和分析了烧结样品的相对密度、弯曲强度、断裂韧性、硬度值、相组成以及显微结构。结果表明,当α-Al2O3添加量为75 wt%,微米TiB2添加量为20 wt%时,所制备的Al2O3/TiB2复相陶瓷刀具材料性能最佳,其相对密度值为98.8%,弯曲强度为606.25 MPa,断裂韧性为4.85 MPa·m1/2,硬度值为26.55 GPa。最佳样品的主晶相为刚玉(Al2O3)和硼化钛(TiB2),次要晶相为氧化钇(Y2O3)。     

太阳能热发电用氧化铝基复相陶瓷抗热震性及EPMA分析

为了提高Al2O3陶瓷的抗热震性及强度,在Al2O3基陶瓷中添加SiC、nano-ZrO2+SiC,利用无压烧结工艺,制备了用于太阳能热发电的Al2O3-SiC及Al2O3-ZrO2(3Y)-SiC复相陶瓷。材料的EPMA分析结果表明:样品中ZrO2颗粒在室温下为以亚稳四方相存在,在裂纹尖端应力场的作用下,ZrO2粒子发生四方相→单斜相的相变吸收能量,从而提高了材料强度及断裂韧性;原料中的部分SiC颗粒发生氧化反应,反应生成莫来石,针棒状莫来石形成桥连结构,阻止热震情况下产生的微裂纹发展成危险裂纹,从而提高材料抗热震性。SEM研究显示,SiC晶粒在外力作用下发生穿晶断裂、被拔出及桥结作用。     

Decomposition of NO on Tungsten Carbide and Molybdenum Carbide Surfaces

The decomposition of ¹⁵NO on C/W(111), C/W(110), and on monolayer and bulk C/Mo/W(111) surfaces is compared based on temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES) measurements. Our results indicate that the decomposition of ¹⁵NO occurs readily over all surfaces, and the only ¹⁵N-containing reaction products are ¹⁵N₂ and ¹⁵N₂O under our experimental conditions. Much higher surface reactivity for ¹⁵NO decomposition was observed over the more open-structured C/W(111) surface, with a value of 0.68 ¹⁵NO/W, in contrast to the surface reactivity of 0.24 ¹⁵NO/W over the close-packed C/W(110) surface. The selectivity of these two ¹⁵N-containing reaction products depends on the structure of the substrates as well. The more open-structured C/W(111) surface favors the production of ¹⁵N₂, with a product selectivity of ¹⁵N₂ being approximately 87%. In contrast, the selectivity to ¹⁵N₂ is only about 52% on C/W(110). In addition, we have investigated the decomposition of ¹⁵NO on C/Mo surfaces that were epitaxially grown on W(111). The selectivity of ¹⁵N₂ on C/Mo/W(111) surfaces is 88%, which is very similar to that observed on C/W(111). Finally, the general similarity between the DeNOx chemistry on carbides and on Pt-group metals will also be discussed.     

Preparation of reaction bonded silicon carbide (RBSC) using boron carbide as an alternative source of carbon

RBSC composites are fully dense materials fabricated by infiltration of compacted mixtures of silicon carbide and carbon by molten silicon. Free carbon is usually added in the form of an organic resin that undergoes subsequent pyrolysis. The environmentally unfriendly pyrolysis process and the presence of residual silicon are serious drawbacks of this process. The study describes an alternative approach that minimizes the residual silicon fraction by making use of a multimodal particle size distribution, in order to increase the green density of the preforms prior infiltration. The addition of boron carbide provides an alternative source of carbon, thereby eliminating the need for pyrolized organic compounds. The residual silicon fraction in the RBSC composites, prepared according to the novel processing route, is significantly reduced. Their mechanical properties, in particular the specific flexural strength is by 15% higher than the value reported for RBSC composites prepared by the conventional approach.     

无压烧结碳化硅复合材料的制备与性能研究

以部分碳化钛为增强相投入到碳化硅基体材料中,并投入微量炭黑和碳化硼为烧结活化剂,利用无压固相烧结技术制造了碳化硅基陶瓷复合材料。评测了其力学性能,凭借扫描电镜(SEM)观测了试样的断口形貌与表观形貌,并探讨了其氧化行为。结果表明:在碳化硅中投加部分碳化钛,对复合材料的力学性能有非常大地益处,于9 wt%时达到顶峰,弯曲强度497 MPa,相对密度98.9%,断裂韧性4.79 MPa·m^1/2。复合材料的显微组织构造紧致密实,TiC颗粒在SiC材料中的离散作用而激发的钉扎效果和裂纹偏移转向为其主要的增韧原理。在设定的氧化条件下(1200℃保温2 h),试样表面形成了一层较为致密并可以弱化氧化进程的氧化膜层。     

国产化干法乙炔装置运行总结

总结了国产化干法乙炔装置2次开车情况,给出了装置的实际运行指标,并详述了开车过程中发现的问题及改进办法。     

Effect of Carbon Containing Materials on Pure Carbon Reaction-bonded SiC

Petroleum coke, graphite, gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide. The influences of different carbon containing materials on properties of carbonaceous precursors, sintering process, and microstructure of the prepared SiC were researched. The results show that ： （ 1 ） With the density of carbon containing materials increasing, the porosity of carbonaceous precursors decreases and the infiltrating process of liquid silicon is more difficult. （2） The reaction between carbon containing materials and liquid silicon, the volume effect is more obvious with the density of carbon containing materials increasing. （3） As the carbon containing materials density decreasing, residual carbon in reaction bonded SiC also decreases.     

Comparison of molybdenum carbide and tungsten carbide for the hydrodesulfurization of dibenzothiophene

The molybdenum and tungsten carbides (Mo₂C and W₂C) were synthesized, characterized and tested in hydrodesulfurization (HDS) of dibenzothiophene (DBT). The phase purity of these catalysts was established by X-ray diffraction (XRD), and the surface properties were determined by N₂ BET specific surface area (Sg) measurements, CO chemisorption and high-resolution transmission electron microscopy (HRTEM). The activities of catalysts were determined during the HDS of DBT at a temperature of 613 K and under a 6 MPa total pressure. Both molybdenum and tungsten carbides were active in HDS of DBT. The reactivity studies showed that molybdenum carbide was more active than tungsten carbide related to weight. However, W₂C was shown to possess stronger hydrogenating properties.     

Comparison between tungsten carbide and molybdenum carbide for the hydrodenitrogenation of carbazole

The activity of molybdenum and tungsten carbides in hydrodenitrogenation (HDN) of carbazole was studied. Transition metal carbides (Mo₂C and W₂C) were synthesized using the temperature-programmed reaction of the appropriate oxide precursor (MoO₃ and WO₃) with the following gas mixture: 10 vol.% CH₄/H₂. The structure of the catalysts was characterized using X-ray diffraction, CO chemisorption, high resolution transmission electron microscopy (HRTEM) and BET surface area measurements. From the HRTEM analysis, it could be concluded that the tungsten carbide was thioresistant in our operating conditions (50 ppm of S, pressure = 6 MPa, 553 < T < 653 K, H₂/feed volumic ratio = 600). In the case of Mo₂C, molybdenum sulphide was observed as single slabs. The activity of catalysts was determined during the hydrodenitrogenation of carbazole at the wide range of temperature (553–653 K) and under a 6 MPa total pressure of H₂. The comparison of tungsten carbide and molybdenum carbide has shown higher activity of Mo₂C than W₂C at the same condition. However, W₂C leads to higher amount of isomers of main products, and have higher hydrogenation activity.     

电石法生产PVC需要注意的问题

叙述了电石法PVC的生产工艺及目前国内电石生产的现状,着重指出电石法生产PVC工艺中需要重视的要点。     

The effect of the third invariant on the strength and failure of boron carbide and silicon carbide

This article presents new test data to assess the effect the third invariant has on the strength and failure of two ceramic materials: boron carbide and silicon carbide. Two experimental techniques are used: the Brazilian test that produces a biaxial state of stress, and a new technique that uses a high-pressure confinement vessel to load a specially designed dumbbell specimen in triaxial extension. The dumbbell geometry provides two important advantages over the typically used cylindrical specimen: no adhesive is required to bond the specimen to the load cell because the dumbbell geometry naturally takes the specimen into tension, and any loading asymmetries are essentially eliminated due to the axisymmetric geometry. The results show that when the stress state is on the tensile meridian the equivalent stress at failure is constant, independent of the hydrostatic pressure. The average equivalent stress at failure is for boron carbide and for silicon carbide. The Brazilian test was only performed on boron carbide and failed at , much higher than when on the tensile meridian () indicating that the effect of the third invariant is significant (because of the difference in the failure strength) and must be accounted for to accurately predict when failure will occur.     

Seamless joining of silicon carbide ceramics through an sacrificial interlayer of Dy3Si2C2

A ternary carbide Dy₃Si₂C₂ coating was fabricated on the surface of SiC through a molten salt technique. Using the Dy₃Si₂C₂ coating as the joining interlayer, seamless joining of SiC ceramic was achieved at temperature as low as 1500 °C. Phase diagram calculation indicates that seamless joining was achieved by the formation of liquid phase at the interface between Dy₃Si₂C₂ and SiC, which was squeezed out under pressure and continuously consumed by the joining interlayer. This work implies the great potential of the family of ternary rare-earth metal carbide Re₃Si₂C₂ (Re = Y, La-Nd) as the sacrificial interlayer for high-quality SiC joining.