15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer

Monolithically integrated InGaAsP 1.55-/spl mu/m ridge waveguide distributed feedback laser diodes with an electroabsorption modulator using an identical active multiquantum-well (MQW) layer structure with two different QW types exhibit low-threshold currents <18 mA. The 3-dBe cutoff frequency of 200-/spl mu/m-long modulators exceeds 15 GHz. 10-Gb/s transmission experiments with a voltage swing of 1.0 V/sub pp/ demonstrate the potential of this novel integration scheme.     

30-GHz bandwidth 1.55-/spl mu/m strain-compensated InGaAlAs-InGaAsP MQW laser

High-speed 1.55 /spl mu/m laser diodes with a 3-dB modulation bandwidths of 30 GHz were fabricated by using short-cavity mushroom structures with undoped, strain-compensated InGaAlAs-InGaAsP twenty-quantum-well active regions. The bandwidths were achieved at low bias current of 100 mA. The laser exhibited a high differential gain of 1.54/spl times/10/sup -15/ cm/sup 2/ and a small K factor of 0.135 ns. These results were achieved by using an In/sub 0.386/Ga/sub 0.465/AlAs barrier with 0.83% tensile strain to reduce the thermal emission time of holes from wells and hence the hole transport time.     

High-efficiency 1.3 /spl mu/m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links

High-efficiency electroabsorption waveguide modulators have been designed and fabricated using strain-compensated InAsP-GaInP multiple quantum wells at 1.32-/spl mu/m wavelength. A typical 200-/spl mu/m-long modulator exhibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW. The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-/spl Omega/ load termination. When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB is achieved at 10 mW input optical carrier power. These analog link characteristics are the first reported using MQW electroabsorption waveguide modulators at 1.32 /spl mu/m.     

120/spl deg/C 10-gb/s uncooled direct Modulated 1.3-/spl mu/m AlGaInAs MQW DFB laser diodes

A 1.3-/spl mu/m AlGaInAs multiquantum well ridge waveguide distributed feedback laser diode was developed. By forming n-InGaAsP grating in the n-InP cladding layer close to the active region, accumulation of the holes in the grating layer was reduced and over 5 mW of output power was obtained at 120/spl deg/C. Clear eye opening was confirmed with no mask hits for OC-192 under 10-Gb/s direct modulation at the temperature up to 120/spl deg/C.     

Coherence-collapse threshold of 1.3-/spl mu/m semiconductor DFB lasers

The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-/spl mu/m antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.     

High-temperature and high-speed operation of a 1.3-/spl mu/m uncooled InGaAsP-InP DFB laser

1.3-/spl mu/m uncooled InGaAsP-InP loss-coupled distributed feedback lasers operating over 10 Gb/s and at 85/spl deg/C were successfully fabricated. In order to achieve high-speed and high-temperature operation simultaneously, the following are thoroughly investigated: modulation-doped and strain-compensated multiple-quantum-well active layers, Fe-doped buried-heterostructure, coupling coefficient of loss-coupled grating, detuning lasing wavelength from the gain peak, and facet coatings. The authors also demonstrate 10 Gb/s transmission with negligible dispersion power penalty over 20 km of nondispersion-shifted fiber at 10 Gb/s for temperatures ranging from 25/spl deg/C to 85/spl deg/C.     

Low-chirp and high-power 1.55-/spl mu/m strained-quantum-well complex-coupled DFB laser

High-power, low-chirp, and low-threshold current characteristics of 1.55 /spl mu/m complex-coupled compressively strained InGaAsP quantum-well DFB laser with a loss grating are presented. Kink-free light-current characteristics with single-mode power over 40 mW are demonstrated for uncoated devices. A relatively low threshold current of 10 mA and a high slope efficiency of 0.23 W/A have been obtained even with the loss grating employed. Stable single-mode emission was demonstrated with a side mode suppression ratio up to 54 dB, a low chirp of less than 0.3 nm under 1 Gb/s pseudorandom digital modulation and a spectral linewidth of 8 MHz.     

Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-/spl mu/m wavelength for high-speed and low-driving-voltage performance

We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-/spl mu/m wavelength: the dual-depletion-region EAM. After an n/sup +/ delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the tradeoff between driving-voltage and electrical bandwidth performance can be released effectively. This new structure can also release the burden imposed on downscaling the width or length of high-speed EAM with low driving-voltage performance. The microwave and electrical-to-optical measurement of this novel device with traveling-wave electrodes show very convincing results.     

1.3-/spl mu/m continuously tunable distributed feedback laser with constant power output based on GaInNAs-GaAs

We have investigated tunable distributed-feedback (DFB) lasers based on GaInNAs quantum wells grown by molecular-beam epitaxy. Three-section tunable DFB lasers were fabricated by patterning laterally gain coupled binary superimposed gratings perpendicular to a ridge waveguide. The discrete tuning range covers 24 nm with sidemode suppression ratios of about 35 dB. The lasers were tuned continuously over a range of over 10 nm with a constant power output of 15 mW per facet.     

High-frequency modulation characteristics of 1.3-/spl mu/m InGaAs quantum dot lasers

In this letter, we report results of small-signal modulation characteristics of self-assembled 1.3-/spl mu/m InGaAs-GaAs quantum dot (QD) lasers at room temperature. The narrow ridge-waveguide lasers were fabricated with multistack InGaAs self-assembled QDs in active region. A high characteristic temperature of T/sub o/=210 K with threshold current density of 200A/cm/sup 2/ was obtained. Small-signal modulation bandwidth of f/sub -3 dB/=12 GHz was measured at 300 K with differential gain of dg/dn/spl cong/2.4/spl times/10/sup -14/ cm/sup 2/ from detailed characteristics. We observed that a limitation of modulation bandwidth in high current injection appeared with gain saturation. This property can direct future high-speed QD laser design.     

High-power angled broad-area 1.3-/spl mu/m laser diodes with good beam quality

A new type of high-power laser diodes is fabricated with a broad-area waveguide tilted at 7/spl deg/ from the facet normal. For the current between 0.6 and 1.2 A, it behaves like a superluminescent diode with 40-nm spectral width and 40-mW output power. The far field emits at about 25/spl deg/ away from the facet normal. For the current above 1.2 A, it oscillates with a narrow spectrum. The far field emits along the facet normal with its angle only twice of the diffraction limit. The output power per facet could be 1 W at 12 A.     

35-GHz intrinsic bandwidth for direct modulation in 1.3-/spl mu/m semiconductor lasers subject to strong injection locking

Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.     

Integrated electroabsorption modulator/DBR laser linearized by RFcurrent modulation

We measure the two-tone intermodulation distortion of an electroabsorption modulator integrated with a DBR laser. Driving the modulator with an ac current yields a significant improvement in linearity over conventional voltage modulation at RF frequencies up to 10 MHz with more than 13 dBc reduction in the minimum distortion values at 0.5 MHz. High-frequency performance is presently limited by the capacitance loading the current drive     

Small-signal modulation characteristics of p-doped 1.1- and 1.3-/spl mu/m quantum-dot lasers

We have investigated the small-signal modulation characteristics of 1.1and 1.3-/spl mu/m p-doped quantum-dot lasers in order to evaluate the potential of acceptor doping. The maximum measured 3-dB bandwidth of the 1.1- and 1.3-/spl mu/m lasers are 11 and 8 GHz, respectively, which are only marginally higher than those in the corresponding undoped devices.     

1.3-/spl mu/m InAs quantum-dot laser with high dot density and high uniformity

We realized a triple-stacked 1.3-/spl mu/m InAs quantum dot (QD) with a high density of 2.4/spl times/10/sup 11/ cm/sup -2/ and a high uniformity of below 24 meV that employs an As/sub 2/ source and a gradient composition (GC) strain-reducing layer (SRL) grown on a GaAs substrate. We demonstrated the 1.3-/spl mu/m wavelength emission of this triple-stacked QD laser with a 0.92-mm cavity length and a cleaved facet at room temperature. In addition, we realized the highest maximum modal gain yet reported of 8.1 cm/sup -1/ per QD layer at beyond 1.28 /spl mu/m by using our high-density and high-uniformity QD.     

50-GHz optically injection-locked 1.55-/spl mu/m VCSELs

High-speed directly modulated diode lasers are important for optical communications and optical interconnects. In this work, we demonstrate greatly enhanced resonance frequency for vertical-cavity surface-emitting lasers, from 7 to 50 GHz, under ultrahigh injection-locking conditions. In addition, a 20-dB gain is achieved for small signal modulation below resonance frequency.     

A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-/spl mu/m CMOS technology

An ultra-wideband mixer using standard complementary metal oxide semiconductor (CMOS) technology was first proposed in this paper. This broadband mixer achieves measured conversion gain of 11 /spl plusmn/ 1.5 dB with a bandwidth of 0.3 to 25 GHz. The mixer was fabricated in a commercial 0.18-/spl mu/m CMOS technology and demonstrated the highest frequency and bandwidth of operation. It also presented better gain-bandwidth-product performance compared with that of GaAs-based HBT technologies. The chip area is 0.8 /spl times/ 1 mm/sup 2/.     

Temperature performance of 1.3-/spl mu/m InGaAsP-InP lasers with different profile of p-doping

Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP-InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperature behavior of the threshold current and slope efficiency for lasers with different doping profiles cannot be explained by the change of the measured value of the leakage current with doping only. The entire experimental data can be qualitatively explained by suggesting that doping ran affect the value of electrostatic band profile deformation that affects temperature sensitivity of the output device characteristics. We show that doping of the p-cladding/SCH layer interface in InGaAsP-InP MQW lasers leads to improvement of the device temperature performance.     

A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-/spl mu/m regime

An all-epitaxial GaInAsN vertical-cavity surface-emitting laser for room-temperature (RT) emission at 1.3 /spl mu/m was developed by solid-source molecular beam epitaxy using a plasma source for nitrogen activation. RT photopumped operation is demonstrated at a wavelength of 1283 nm. Stimulated emission was observed up to a record high temperature of 143/spl deg/C, resulting in an emission wavelength of 1294 nm.