A monolithic IGBT gate driver for intelligent power modules implemented in 0.8 μm high voltage (50 V) CMOS process

This paper discusses the design and implementation of a monolithic IGBT gate driver for intelligent power modules (IPMs). The objective of this work is to design and implement a monolithic IGBT gate driver IC with efficient protection functions in a high-voltage (50 V) 0.8-μm CMOS process. The gate driver is designed for medium power applications, such as home appliances. It includes low-voltage logic, 5-V logic regulator, analog control circuitry, high-voltage (50 V) high-current output drivers, and protection circuitry.     

生产IGBT的一种工艺──三重扩散

根据目前国内半导体工艺水平的现状，提出了一种制作ＩＧＢＴ的工艺方法──三重扩散法，并着重用器件模拟的方法，从理论上分析和证实了三重扩散法在高压ＩＧＢＴ器件制作上的优点和可行性，并用实验结果验证其正确性。     

一种新N型射极势垒绝缘栅双极晶体管

本文提出了一种新N型射极势垒绝缘栅双极晶体管。该器件用N型轻掺杂区代替传统的P+区形成空穴势垒,以阻止寄生PNP晶体管空穴分流,从而增强电导调制效应。仿真验证结果显示,该器件对比传统沟槽IGBT,其电流密度和关断损耗分别增加和降低了49%和25%,同时具有相似的击穿电压、关断时间和雪崩能量。此外,该器件具有无限大的跨导,有利于开通和关断。因此,该器件可应用于高压大功率电力电子系统。     

Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields

The IGBT power modules are widely used in photovoltaic power generation, high-voltage direct current transmission and other fields. Due to the need for high reliability in the application fields, the industry is very concerned about the reliability of IGBT power modules. Based on the two different working conditions of the three-level NPC photovoltaic inverter, this paper has monitored the health status of bonding wires of the IGBT modules inside the inverter. In addition, for the experimental results of monitoring, theoretical analysis and experimental demonstration from the perspective of multi-physics (temperature field, electromagnetic field, etc.) are innovatively introduced, which provides a new perspective for the research of power module reliability.     

A novel gate geometry for the IGBT: the trench planar insulatedgate bipolar transistor (TPIGBT)

This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage. The switching analysis indicates that the TPIGBT represents a good trade-off between planar and trench structures. By separating the trench gate requirements away from the cathode cells, the technology development cycle and costs can be reduced. Furthermore, the reduced cell-width and the shallow trench presents TPIGBT as a cost-effective structure for high-voltage applications     

Assessment of off-state negative gate voltage requirements forIGBTs

This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors     

多路输出IGBT驱动电路的设计

介绍了大功率IGBT的驱动原理及工作特性,设计了一种高可靠可维护具有四路驱动信号输出的高电压大功率IGBT驱动电路,给出了电路的原理图和关键参数设计原理及相关波形。     

高压IGBT线性变窄场限环终端设计

为使3300 V及以上电压等级绝缘栅双极型晶体管(IGBT)的工作结温达到150℃以上,设计了一种具有高结终端效率、结构简单且工艺可实现的线性变窄场限环(LNFLR)终端结构。采用TCAD软件对这种终端结构的击穿电压、电场分布和击穿电流等进行了仿真,调整环宽、环间距及线性变窄的公差值等结构参数以获得最优的电场分布,重点对比了高环掺杂浓度和低环掺杂浓度两种情况下LNFLR终端的阻断特性。仿真结果表明,低环掺杂浓度的LNFLR终端具有更高的击穿电压。进一步通过折中击穿电压和终端宽度,采用LNFLR终端的3300 V IGBT器件可以实现4500 V以上的终端耐压,而终端宽度只有700μm,相对于标准的场限环场板(FLRFP)终端缩小了50%。     

高压Trench IGBT的研制

介绍了当前绝缘栅双极晶体管(IGBT)的几种结构及沟槽型IGBT的发展现况,分析了高电压沟槽型非穿通(NPT)IGBT的结构及工艺特点。通过理论分析计算出初步器件的相关参数,再利用ISE仿真软件模拟器件的结构及击穿和导通特性,结合现有沟槽型DMOS工艺流程,确定了器件采用多分压环加多晶场板的复合终端、条状元胞、6μm深度左右沟槽、低浓度背面掺杂分布与小于180μm厚度的器件结构,可以很好地平衡击穿特性与导通特性对器件结构的要求。成功研制出1 200 V沟槽型NPT系列产品,并通过可靠性考核,经过电磁炉应用电路实验,结果表明IGBT器件可稳定工作,满足应用要求。该设计可适合国内半导体生产线商业化生产。     

Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applications

Since the first commercially viable thyristors appeared in the early 1960s, there has been a dramatic increase in the switched power ratings and versatility of high-voltage power semiconductor devices. By the mid 1970s, thyristors with switched power ratings of several MVA were being applied in high voltage dc transmission systems and static VAr compensators. The introduction, in the 1980s, of controlled turn-off devices, such as the gate turn-off thyristor (GTO) and insulated gate bipolar transistor (IGBT), broadened the application of high-voltage power devices to hard-switched converters and, by the start of the 21st century, controllable silicon power devices were available with voltage ratings of 12?kV and switched power capabilities of up to 40?MVA. A review of the current state-of-the-art in silicon high-voltage power semiconductor technology covers gate-commutated thyristors (GCT, IGCT) and IGBT devices, including the injection-enhanced IGBT or IEGT. Despite these considerable achievements, there is now mounting evidence that silicon-based power semiconductors are reaching their limit, both in terms of voltage rating and of switched power capability. The introduction of wide-band-gap semiconductor materials such as silicon carbide offers the potential to break through the voltage-switching frequency limitations of silicon, with power-switching frequency products more than two orders of magnitude higher. An analysis of the current status and future prospects for silicon carbide power electronic devices is presented, together with a case study comparing a variety of silicon and silicon carbide solutions in a 10?kV hard-switched converter application. It is shown that an all-silicon carbide switch offers the best electrical performance and lowest cost solution, in spite of higher per unit area device costs.     

Floating metal rings (FMR), a novel high-voltage blocking technique

Floating Metal Rings (FMR), a novel high-voltage blocking technique, is proposed. Its feasibility has been demonstrated using a 600- V wide-base Bipolar Junction Transistor (BJT). The new technique supercedes the diffused guard ring approach to increasing junction breakdown. Half the semiconductor surface area is required with FMR technique compared to the diffused guard ring to achieve the same 600-V blocking voltage.     

Progress in MOS-controlled bipolar devices and edge termination technologies

An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices is presented. The Insulated Gate Bipolar Transistor (IGBT) technology is explored from its initial stage up to the latest state-of-the-art developments, in terms of cathode engineering, drift design and anode engineering to highlight the different approaches used for optimisation and the achieved trade-offs. Further, several MOS-gated thyristors, which are aimed to replace the IGBT, are analysed. Moreover, the present paper reviews the various approaches in the fabrication of edge termination used in power device MOS-controlled bipolar devices.     

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process

This paper discusses the benefits of a full-bridge output stage on integrated IGBT gate drive circuits. This full-bridge topology allows obtaining positive and negative gate voltages using a single floating power supply. Short circuit protections have also been integrated, implementing an original soft shutdown process after an IGBT short circuit fault. The monolithic integration is based on an innovative high-voltage CMOS technology for power integrated circuits, using a standard low cost CMOS technology, requiring only one extra processing step. Lateral power N- and P-MOS transistors have been optimized using 2D simulators attending both specific on-resistance and breakdown voltage in order to optimize the full-bridge output stage. The IGBT driver has been experimentally tested, producing ±15 V gate-to-emitter voltage, and supplying the current peaks required by the 600 V IGBT switching processes. The driver characteristic response times are adapted to work at high switching frequency (>25 kHz) with high value of capacitive loads (3.7 nF).     

Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications. The difference in the packaging style and working conditions between IGBT modules and press pack IGBTs creates distinctions in, for instance, the thermal characteristics and reliability. Those distinctions lead to different applications and working conditions. In this paper, the development of IGBT devices has been reviewed, including the distinction of IGBT modules and press pack IGBTs in packaging style. Most importantly, the thermal and reliability characteristics have been compared in detail and the applications that are most suitable for IGBT modules and press pack IGBTs were outlined. The comparison of the thermal characteristics, reliability and applications provides guidance for users to take full advantage of the devices according to their requirements.     

Lateral MOS-gated power devices-a unified view

The authors present a unified view of lateral MOS-gated power devices based on the underlying device physics. This unified view facilities a qualitative understanding of the relative merit of different devices and their performance. Various MOS-controlled power and high-voltage devices can be viewed in a unified approach depending on the type of MOS gate control of the main current flowing through the device. The majority-carrier devices tend to favor speed over on-resistance. The mixed (bipolar-type) devices tend to favor lower on-resistance than speed. Hybrid devices are between these two extremes. Specifically, for high-frequency, high-voltage, and low-current applications the lateral DMOS (LDMOS) transistor is the device with the most desirable characteristics. At lower switching frequency and low-to-moderate current levels, the lateral IGBT (LIGBT) provides the same functionality with substantial areas savings. Lateral MOS-controlled thyristors (LMCTs) are suitable for low switching speed, high current applications     

Integrated IGBT short-circuit protection structure: Design and optimization

Generally, short-circuit protections for IGBT are provided by the assistance of analogical discrete devices which can sense and protect. In this paper, we present a new NPT IGBT structure with integrated short-circuit protection. This structure is composed of an anode voltage sensor, a delay MOS transistor, a MOS transistor allowing IGBT turn-off and a Zener diode. The structure optimization depends on the flexible technological process developed for power structures and based on the functional integration concept [1]. The protection structure optimization is presented and its functionality is verified by 2D simulations with ISE TCAD.     

Multilevel inverter by cascading industrial VSI

In this paper, the modularity concept applied to medium-voltage adjustable speed drives is addressed. First, the single-phase cascaded voltage-source inverter that uses series connection of insulated gate bipolar transistor (IGBT) H-bridge modules with isolated DC buses is presented. Next, a novel three-phase cascaded voltage-source inverter that uses three IGBT triphase inverter modules along with an output transformer to obtain a 3-p.u. multilevel output voltage is introduced. The system yields in high-quality multistep voltage with up to four levels and low dv/dt, balanced operation of the inverter modules, each supplying a third of the motor rated kVA. The concept of using cascaded inverters is further extended to a new modular motor-modular inverter system where the motor winding connections are reconnected into several three-phase groups, either six-lead or 12-lead connection according to the voltage level, each powered by a standard triphase IGBT inverter module. Thus, a high fault tolerance is being achieved and the output transformer requirement is eliminated. A staggered space-vector modulation technique applicable to three-phase cascaded voltage-source inverter topologies is also demonstrated. Both computer simulations and experimental tests demonstrate the feasibility of the systems.     

A 0.8 μm BiCMOS Gate Driver for IGBT Power Switch

This paper discusses the design and implementation of a monolithic gate driver for an Insulated Gate Bipolar Transistor (IGBT). The objective is to implement a high voltage (25 V) monolithic gate driver with a novel protection circuit in a conventional low-voltage (5 V) high-density (0.8 m) BiCMOS process. Extended drain MOS-FETs are used to implement the high-voltage capability in this design.     

A new hybrid VDMOS-LIGBT transistor

A p-channel vertical DMOSFET structure coupled with a lateral IGBT (insulated-gate bipolar transistors) path is described. External resistors are placed in series with either the collector terminal (the bipolar-enhanced MOSFET (BIENFET) mode) or the drain terminal (the substrate collector-shorted (SCOSH) LIGBT mode) to vary the degree of minority-carrier injection. This creates the opportunity to obtain a device with externally programmable forward-drop/switching speed tradeoff. The device is shown experimentally to have forward drops close to those of vertical and lateral IGBTs and turn-off times close to that of MOSFETs. Typical forward drops at 93 A/cm² range from 3-4 V and corresponding turn-off times from 4.3 to 0.22 μs when the drain resistor is varied. This device is considered particularly attractive as a high-frequency and high-voltage power switch     

A Novel Latch-Up Protection for Bulk-Silicon Scan Driver ICs of Shadow-Mask Plasma-Display Panel

This letter reports a low-cost and excellent latch-up protection technology for bulk-silicon scan driver ICs of shadow-mask plasma-display panel (SM-PDP) by integrating a 100-V lateral double-diffused (LD) MOS and a standard low-voltage (LV)-CMOS control circuit. The technology is implemented using an N+ guard ring in the LV-n-well, a P+ guard ring in the p-substrate near the LV-nMOS, and a deep high-voltage (HV)-n-well and a p-drift guard ring between the HV-nLDMOS and LV-CMOS circuits. The experiment results show that the latch-up in the LV-CMOS circuits is avoided when the scan ICs are applied with -340 V during the sustain periods.