Ku波段低相位噪声体效应管

体效应振荡器相位噪声主要决定于体效应管的噪声.文中介绍了Ku波段低相位噪声体效应管的设计与工艺实现,并制作出了与设计结果基本一致的器件.该器件在Ku波段高端输出功率大于150 mW,转换效率大于5%.将其安装于低相噪介质振荡器中,在保证一定的输出功率的情况下,相位噪声小于-98dBc/Hz(偏离载频为5 kHz时),-10dB谱线宽度小于200Hz.     

S波段低相噪振荡器的设计

基于ADS软件仿真,提出了S波段低相噪振荡器的设计方案。该振荡器采用了100MHz低相噪晶体振荡器和倍频链电路的组合,通过三次倍频来实现2GHz的单点频输出,并且在倍频过程中尽量地让相位噪声按照20lgN恶化。实测结果表明,振荡器输出信号的相位噪声在偏移1kHz处可达到-155dBc/Hz,最终输出信功率大于10dBm,谐波抑制大于25dBc。     

C波段微波低相位噪声介质振荡源

介绍了微波低相位噪声介质振荡器的设计方法。就影响介质振荡器相位噪声的因素进行了讨论,从谐振回路有载Q值、有源器件、增益压缩量、电路模式等几个方面提出了降低相位噪声的方法,并给出了一个C波段微波低相噪振荡器的设计实例。测试结果表明:该振荡器工作频率3 900 MH z,输出功率大于10 dBm,相位噪声达到-102 dB c/H z@1 kH z;-128 dB c/H z@10 kH z。     

Ku波段介质锁相抗振频率源研制

提出了一种混频介质锁相的方案,对Ku波段的发射信号进行一次混频锁相得到Ku波段的本振信号,实现了本振信号与发射信号的相位同步。电路设计采用了低噪底鉴相芯片和自主设计的低相噪Ku波段介质压控振荡器(DRVCO)。结构设计中充分考虑抗振动性能,并用ANSYS软件对结构进行力学仿真,达到很好的抗振动效果,组件外形尺寸为110mm×65mm×13mm。测试结果表明,静态下该Ku波段频率源输出功率12dBm,杂波抑制比≥70dBc,相位噪声-91dBc/Hz/@1kHz,-105dBc/Hz@10kHz;振动条件下1kHz、10kHz处相位噪声恶化不超过3dB。     

X和Ku波段宽带Gunn VCO

<正>用南京电子器件研究所研制的体效应管和变容管的管芯、集总参数元件的谐振电路,制成了变容管调谐体效应振荡器.其衬底小于0.78cm~2.在X波段,一个振荡器频率范围为7.2—12.4GHz,输出功率大于70mW,最大126mW.在Ku波段,一个振荡器频率范围为12.0—18.4GHz,输出功率大于75mW,最大功率137mW.在14.0—18.5GHz,带内最     

双耦合跨导增强型低功耗压控振荡器

设计了一种工作于Ku波段和Ka波段的新型电容电感压控振荡器(LC VCO),具有低功耗和低相位噪声的优点。Ku波段的信号由交叉耦合LC VCO产生,在此基础上利用PMOS push-push倍频器结构,将信号频率由Ku波段扩展到Ka波段。采用互补型交叉耦合对结构,通过电流复用技术,提高信号的输出摆幅。同时该结构通过电容分裂技术和栅极漏极阻抗平衡技术,降低了功耗和相位噪声。该双频段VCO芯片基于0.13μm CMOS工艺实现,尺寸为0.88 mm×0.64 mm。测试结果表明,在1.25 V电源电压下,该VCO的功耗为2.25 mW。14.53 GHz时,该VCO在偏移中心频率1 MHz和10 MHz处的输出相位噪声分别为-115.3 dBc/Hz和-134.8 dBc/Hz, 29.08 GHz时的输出相位噪声分别为-109.67 dBc/Hz和-129.23 dBc/Hz。     

X波段高稳定低相位噪声锁相源

<正>卫星高速数字通讯的迅速发展,需要高质量微波源作第一本振.由于数字通讯多采用调相制,所以对本振源的频率稳定度和相位噪声提出了较高的要求.本文介绍采用谐波混频锁相法,由高稳定5MHz晶体振荡器作参考源,用它的高次谐波直接锁定X波段体效应振荡器,获得了高稳定、低相位噪声输出.得到的结果是:频率稳定度10~(-9)/天(-10～+50℃),S/N>35dB(信号与偏离信号10Hz～15kHz内,双边带相位噪声功率之比),输出功率大于30mW,电源杂波干扰-50dB(≤300Hz).     

L波段低相位噪声压控振荡器

对微波晶体管振荡器的相位噪声进行了分析。为达到压控振荡器的低相位噪声要求,采用了低电平振荡经放大后输出的设计方案。实现的微带压控振荡器工作于L波段. 相对电调带宽大于10％,不加介质谐振器其SSB相位噪声约达到一90dBC/Hz/10kHz;经加放大输出功率达到10mW以上,功率平坦度≤±0.7dB. 在-20～+60℃范围内正常工作,频率温度稳定性为6×10~(-5);本压控振荡器已应用于频率合成器中。     

V波段小型化低相噪频率综合器

本文研究了一种V波段超小型低相噪频率综合器,研制了L段捷变频频综、Ku波段取样锁相源、上变频组件、倍频器等四个小型化组件.为了得到较低的相位噪声和捷变频速度,本捷变频频综采用上变频-倍频方案,其中DRO PLS保证低相位噪声性能,L波段捷变频频综保证捷变频功能.该频综尺寸为100×80×30mm³,相位噪声低于-86dBc/Hz(1kHz),捷变频时间小于40μs,杂波抑制优于-60dBc.     

Ku波段小型低相噪频率综合器

设计了一种用于某机载电子设备上的小型低相噪Ku波段频率综合器,并对其关键技术进行了介绍,分析了主要技术指标。整个频综器在204.8 mm×134.8 mm×78.8 mm内实现,测试结果为输出频率Ku波段,带宽480 MHz,跳频点数49点,相噪优于-96 dBc/Hz/1 kHz,杂波抑制优于-70 dBc,捷变频时间小于50μs。     

A Novel SIW-Based Planar W-Band GaAs Gunn Harmonic Oscillator

Based on the substrate integrated waveguide (SIW) technology, a novel W-band low phase noise GaAs Gunn planar harmonic oscillator is developed in this paper. The technique of harmonic extraction from Gunn diodes and SIW resonant cavity structures are discussed in detail. Due to the high quality factor and planar structure of the SIW cavity resonator, the oscillator is characterized by some advantages such as low phase noise, small size, low cost and planar integration. The measured phase noise is −108.56 dBc/Hz at 1 MHz offset and the output power is more than 9 dBm at 94.78 GHz. A 300 MHz of linear tuning range with power fluctuation less than 1.5 dB is observed when the Gunn diode is biased from 4 to 5.3 V.     

Effects of gamma radiation on Gunn diodes

Changes in Gunn diode performance caused by 1.25 MeV Co-60 gamma radiation have been studied. Hall effect measurements as a function of temperature made on GaAs crystals grown by liquid epitaxy reveal an energy level 0.13 eV below the conduction band which was not detectable before irradiation. Detailed measurements of low-field resistance were carried out on Gunn diodes together with output power and FM noise in a fixed X-band cavity as a function of gamma ray fluence. The power output was degraded by 3 dB after a fluence of about 3×10¹⁷photons/cm²and oscillations ceased at fluences two to three times this value. The FM noise increased only slightly and can be related to the change in matching of the diodes to the cavity. These effects are explained in terms of carrier removal, in that irradiation generates deep levels which trap conduction electrons and reduce the carrier concentration. A theoretically derived power degradation curve for Gunn diodes is given and compared with the experimental results.     

一种简易微波VCO的设计*

描述了一种高性能简易微波VCO器件的设计和实验。该器件基于负阻原理设计,利用微波FET和变容二极管等分立元件制作,具有高性价比的特点。设计过程中利用ADS软件进行电路的匹配和优化,通过合适的外电路设计对变容二极管VCO的调频线性度进行改善,同时,降低了VCO的相位噪声。实际电路的测试结果表明,当该VCO的中心频率为4.3GHz时,其调谐范围大于200MHz,输出功率大于5.2dBm,相位噪声优于-112dBc/Hz@1MHz和-83dBc/Hz@100kHz。     

Gunn-Effect Amplifiers for Microwave Communication Systems in X, Ku, and Ka Bands

This paper describes the design and performance of small-signal stable multistage Gunn-effect reflection-type amplifiers for communication systems in X, Ku, and Ka bands. A single-stage design approach is developed, based on measured small-signal Z parameters of the Gunn diodes. This technique is then applied to a microstrip medium at lower frequencies (X and Ku bands) and to a coax/waveguide hybrid structure at Ku band. Performance of a two-stage amplifier is described in the bands 11.7 to 12.2 GHz and 14.0 to 14.5 GHz. In high Ka band, performance of both a two- and a four-stage amplifier is presented.     

Ka-Band Substrate IntegratedWaveguide Gunn Oscillator

Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level output power of 15.2 dBm, a low phase noise less than -91.23 dBc/Hz at 100 kHz and frequency excursion 53 MHz over temperature range from 15degC to 70degC. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.     

Low noise, high efficiency GaAs IMPATT diodes at 30 GHz

Low noise, very high efficiency IMPATT diodes provide an attractive alternative to Gunn diodes for many millimetre-wave applications. GaAs hi-lo single-drift IMPATT diodes are demonstrated. The diodes are fabricated using molecular beam epitaxy and (at approximately 30 GHz) exhibit exceptional efficiencies (>20%), very low FM noise (-88 dBc/Hz at 100 kHz off-carrier) and simultaneous CW power levels in excess of 300 mW.<>     

Ku波段小型化功率介质振荡器的研制

针对小型化条件下,影响介质振荡器输出功率、相位噪声等主要技术指标的因素进行了分析,提出了提高小型化微波功率介质振荡器的输出功率、降低相位噪声和改善器件散热的方法。通过优化电路结构和CAD仿真技术,解决了功率耗散大与盒体模块小、相位噪声要求高和腔体尺寸小这两个主要矛盾,研制出的DRO输出频率为Ku波段点频,输出功率达到了0.5W,工作效率为20%,相位噪声优于-80dBc/Hz@10kHz,体积为34mm×27mm×9mm。研制结果表明,该介质振荡器具有体积小、输出功率高、相位噪声较高等优点,性能可靠,满足系统小型化使用要求。     

GaAs W-band IMPATT diodes for very low-noise oscillators

W-band single-drift flat-profile IMPATT diodes were fabricated from GaAs MBE material and tested in a full-height waveguide resonant cavity with resonant cap. A quasi-optical parabolic Fabry-Perot resonator was used to determine the FM noise of the GaAs IMPATT oscillator. With a minimum noise measure of 20 dB at power levels around 20 mW, IMPATT diode oscillators can compete well with oscillators using Gunn devices. The (N/C)/sub FM/=-82 dBc measured at 100 kHz frequency off-carrier and at Q/sub EX/=95 is comparable to the value obtained from Gunn devices. The maximum available output power of 270 mW, however, markedly exceeds that of Gunn oscillators.<>