Ultra‐low temperature sintering microwave dielectric ceramics based on Ag2O–MoO3 binary system

The Ag₂Mo₂O₇ and Ag₆Mo₁₀O₃₃ ceramics for ultra‐low temperature co‐fired ceramic application were prepared by the solid‐state reaction route. The optimized densification temperatures of Ag₂Mo₂O₇ and Ag₆Mo₁₀O₃₃ are 460°C and 500°C, respectively. The phase structures and microstructures of these ceramics were systematically studied. The Ag₂Mo₂O₇ ceramic sintered at 460°C/4 h exhibits excellent microwave dielectric properties with ε_r=13.3, Q×f=25 300 GHz and τ_f=?142 ppm/°C at 9.25 GHz. The Ag₆Mo₁₀O₃₃ ceramic sintered at 500°C/4 h shows the microwave dielectric properties with ε_r=14.0, Q×f=8500 GHz and τ_f=?50 ppm/°C at 9.00 GHz. Moreover, when Ag₂Mo₂O₇ samples are sintered at ultra‐low sintering temperatures of 420°C‐490°C, the Q×f values of them are all above 20 000 GHz. Besides, the Ag₂Mo₂O₇ ceramic does not react with silver powder or aluminum powder. The variation of relative permittivity, resonant frequency, and Q×f values as a function of operating temperature has been also studied. All the results indicate that the Ag₂Mo₂O₇ ceramic is a good candidate for ultra‐low temperature co‐fired microwave devices.     

Sintering behavior,structural phase transition,and microwave dielectric properties of La1‐xZnxTiNbO6‐x/2 ceramics

La_1‐xZn_xTiNbO_6‐x/2 (LZTN‐x) ceramics were prepared via a conventional solid‐state reaction route. The phase, microstructure, sintering behavior, and microwave dielectric properties have been systematically studied. The substitution of a small amount of Zn²⁺ for La³⁺ was found to effectively promote the sintering process of LTN ceramics. The corresponding sintering mechanism was believed to result from the formation of the lattice distortion and oxygen vacancies by means of comparative studies on La‐deficient LTN ceramics and 0.5 mol% ZnO added LTN ceramics (LTN+0.005ZnO). The resultant microwave dielectric properties of LTN ceramics were closely correlated with the sample density, compositions, and especially with the phase structure at room temperature which depended on the orthorhombic‐monoclinic phase transition temperature and the sintering temperature. A single orthorhombic LZTN‐0.03 ceramic sintered at 1200°C was achieved with good microwave dielectric properties of ε_r~63, Q×f~9600 GHz (@4.77 GHz) and τ_f ~105 ppm/°C. By comparison, a relatively high Q × f~80995 GHz (@7.40 GHz) together with ε_r~23, and τ_f ~?56 ppm/°C was obtained in monoclinic LTN+0.005ZnO ceramics sintered at 1350°C.     

Microstructural and Microwave Dielectric Properties of Bi12GeO20 and Bi2O3‐Deficient Bi12GeO20 Ceramics

Bi₁₂GeO₂₀ ceramics sintered at 800°C had dense microstructures, with an average grain size of 1.5 μm, a relative permittivity (ε_r) of 36.97, temperature coefficient of resonance frequency (τ_f) of ?32.803 ppm/°C, and quality factor (Q × f) of 3137 GHz. The Bi_12‐xGeO_20‐1.5x ceramics were well sintered at both 800°C and 825°C, with average grain sizes exceeding 100 μm for x ≤ 1.0. However, the grain size decreased for x > 1.0 because of the Bi₄Ge₃O₁₂ secondary phase that formed at the grain boundaries. Bi_12‐xGeO_20‐1.5x (x ≤ 1.0) ceramics showed increased Q × f values of >10 000 GHz, although the ε_r and τ_f values were similar to those of Bi₁₂GeO₂₀ ceramics. The increased Q × f value resulted from the increased grain size. In particular, the Bi_11.6GeO_19.4 ceramic sintered at 825°C for 3 h showed good microwave dielectric properties of ε_r = 37.81, τ_f = ?33.839 ppm/°C, and Q × f = 14 455 GHz.     

Low‐Temperature Sintering and Microwave Dielectric Properties of ZnNb2O6–TiO2 Ceramics with BaCu(B2O5) Additions

The influence of BaCu(B₂O₅) (BCB) on densification, phases, microstructure and microwave dielectric properties of ZnNb₂O₆–xTiO₂ (x = 1.70–1.90) composite ceramics have been investigated. Undoped ZnNb₂O₆–1.8TiO₂ ceramics sintered at 1200°C exhibit temperature coefficient of resonant frequency (τ_f) ~9.25 ppm/°C. When BaCu(B₂O₅) was added, the sintering temperature of the ZnNb₂O₆–1.8TiO₂ composite ceramics was effectively reduced to 950°C. The results indicated that the permittivity and Q × f were dependent on the sintering temperature and the amounts of BaCu(B₂O₅). Addition of 3.0 wt% BaCu(B₂O₅) in ZnNb₂O₆–1.8TiO₂ ceramics sintered at 950°C showed excellent dielectric properties of ε_r = 40.9, Q × f = 12,200 GHz (f = 5.015 GHz) and τ_f = +0.3 ppm/°C.     

Microwave Dielectric Properties of MLi2Ti6O14 [M=Ba and Sr] Ceramics and Their Compatibility with Sliver

Microwave dielectric properties of Li‐containing orthorhombic compounds with the composition of MLi₂Ti₆O₁₄ (M = Ba and Sr) were investigated. The ceramics were synthesized by the conventional solid‐state reaction route. The optimized sintering temperatures for the BaLi₂Ti₆O₁₄ and SrLi₂Ti₆O₁₄ ceramics are 1025°C and 1000°C, respectively. Favorable microwave dielectric properties were obtained with moderate ε_r of 31.7 and 33.6, quality factor Q × f values of 23 300 (at 7.3 GHz) and 8700 GHz (at 6.8 GHz), and low‐temperature coefficient of resonant frequency (τ_f) values of ?15.4 and ?2.7 ppm/°C for BaLi₂Ti₆O₁₄ and SrLi₂Ti₆O₁₄ ceramics, respectively. The addition of BaCu(B₂O₅) can effectively reduce the sintering temperature below 930°C without degrading the microwave dielectric properties. Compatibility with Ag electrode indicates these materials could be applied to low‐temperature cofired ceramic devices.     

Low‐Temperature Sintering and Microwave Dielectric Properties of (Mg0.95Zn0.05)2(Ti0.8Sn0.2)O4–(Ca0.8Sr0.2)TiO3 Composite Ceramics

0.9(Mg_0.95Zn_0.05)₂(Ti_0.8Sn_0.2)O₄–0.1(Ca_0.8Sr_0.2)TiO₃ (MZTS–CST) ceramics were prepared by a conventional solid‐state route. The MZTS–CST ceramics sintered at 1325°C exhibited ε_r = 18.2, Q × f = 49 120 GHz (at 8.1 GHz), and τ_f = 15 ppm/°C. The effects of LiF–Fe₂O₃–V₂O₅ (LFV) addition on the sinterability, phase composition, microstructure, and microwave dielectric properties of MZTS–CST were investigated. Eutectic liquid phases 0.12CaF₂/0.28MgF₂/0.6LiF and MgV₂O₆ were developed, which lowered the sintering temperature of MZTS–CST ceramics from 1325°C to 950°C. X‐ray powder diffraction (XRPD) and energy dispersive spectroscopy (EDS) analysis revealed that MZTS and CST coexisted in the sintered ceramics. Secondary phase Ca₅Mg₄(VO₄)₆ as well as residual liquid phase affected the microwave dielectric properties of MZTS–CST composite ceramics. Typically, the MZTS–CST–5.3LFV composite ceramics sintered at 950°C showed excellent microwave dielectric properties: ε_r = 16.3, Q × f = 30 790 GHz (at 8.3 GHz), and τ_f = ?10 ppm/°C.     

Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.     

Effect of Glass Addition on the Microwave Dielectric Properties of CaMgSi2O6 Ceramics

CaMgSi₂O₆ (CMS) ceramics prepared by the solid-state ceramic route have a sintering temperature of 1300°C/2 h. The sintering temperature of CMS was reduced below the melting point of Ag using low-melting LBS and LMZBS glasses. In the case of CMS+15 wt% LMZBS sintered at 900°C/2 h, the dielectric properties obtained were ɛ_r=8.2, Q_u×f=32,000 GHz (10.15 GHz), and τ_f=–48 ppm/°C. The CMS+15 wt% LBS composite, sintered at 925°C/2 h, showed ɛ_r=8, Q_u×f=15,000 GHz (10.17 GHz), and τ_f=–49 ppm/°C. The chemical compatibility of Ag with the ceramic–glass composites was also investigated for low-temperature co-fired ceramic applications.     

Molten Salt Synthesis,Polymorphism, and Microwave Dielectric Properties of Ba8NiTa6O24 Perovskite

Molten salt synthesis (MSS) of the eight‐layer hexagonal perovskite Ba₈NiTa₆O₂₄ was performed using mixed KCl–NaCl salts in comparison with solid‐state synthesis (SSS). In the SSS, the hexagonal Ba₈NiTa₆O₂₄ formed at 1300°C via a reaction between cubic Ba₃NiTa₂O₉ and hexagonal Ba₅Ta₄O₁₅. While the MSS did not lower the synthesis temperature of the hexagonal Ba₈NiTa₆O₂₄ but stabilized an unusual A‐ and B‐site‐deficient cubic perovskite polymorph of Ba₈NiTa₆O₂₄ below 1350°C as an intermediate phase prior to transforming into the hexagonal phase. This cubic polymorph contains ~3% A‐site and ~9.5% B‐site vacancies plus ~3% Ba cations in the B sites and demonstrated remarkable stability below 1350°C when without presence of the molten salt. The cubic polymorph displayed larger ε ~ 36 and τ_f ~ 110 ppm/°C than the hexagonal polymorph from the MSS (ε ~ 29 and τ_f ~ 67 ppm/°C). The hexagonal SSS‐processed ceramics showed advantageous dielectric properties (Q_f ~ 52 000 GHz, τ_f ~ 30 ppm/°C) over both cubic and hexagonal MSS‐processed ones (Q_f ~ 18 600–20 000 GHz), while displaying anisotropic grain growth. The anisotropic grain growth was suppressed significantly by the MSS processing.     

Low‐temperature sintering and thermal stability of Li2GeO3‐based microwave dielectric ceramics with low permittivity

A low‐permittivity dielectric ceramic Li₂GeO₃ was prepared by the solid‐state reaction route. Single‐phase Li₂GeO₃ crystallized in an orthorhombic structure. Dense ceramics with high relative density and homogeneous microstructure were obtained as sintered at 1000‐1100°C. The optimum microwave dielectric properties were achieved in the sample sintered at 1080°C with a high relative density ~ 96%, a relative permittivity ε_r ~ 6.36, a quality factor Q × f ~ 29 000 GHz (at 14.5 GHz), and a temperature coefficient of resonance frequency τ_f ~ ?72 ppm/^°C. The sintering temperature of Li₂GeO₃ was successfully lowered via the appropriate addition of B₂O₃. Only 2 wt.% B₂O₃ addition contributed to a 21.2% decrease in sintering temperature to 850°C without deteriorating the dielectric properties. The temperature dependence of the resonance frequency was successfully suppressed by the addition of TiO₂ to form Li₂TiO₃ with a positive τ_f value. These results demonstrate potential applications of Li₂GeO₃ in low‐temperature cofiring ceramics technology.     

Microwave dielectric properties of SnO‐SnF2‐P2O5 glass and its composite with alumina for ULTCC applications

Ultralow‐temperature sinterable alumina‐45SnF₂:25SnO:30P₂O₅ glass (Al₂O₃‐SSP glass) composite has been developed for microelectronic applications. The 45SnF₂:25SnO:30P₂O₅ glass prepared by melt quenching from 450°C has a low T_g of about 93°C. The SSP glass has ε_r and tanδ of 20 and 0.007, respectively, at 1 MHz. In the microwave frequency range, it has ε_r=16 and Q_u × f=990 GHz with τ_f=?290 ppm/°C at 6.2 GHz with coefficient of thermal expansion (CTE) value of 17.8 ppm/°C. A 30 wt.% Al₂O₃ ‐ 70 wt.% SSP composite was prepared by sintering at different temperatures from 150°C to 400°C. The crystalline phases and dielectric properties vary with sintering temperature. The alumina‐SSP composite sintered at 200°C has ε_r=5.41 with a tanδ of 0.01 (1 MHz) and at microwave frequencies it has ε_r=5.20 at 11 GHz with Q_u × f=5500 GHz with temperature coefficient of resonant frequency (τ_f)=?18 ppm/°C. The CTE and room‐temperature thermal conductivity of the composite sintered at 200°C are 8.7 ppm/°C and 0.47 W/m/K, respectively. The new composite has a low sintering temperature and is a possible candidate for ultralow‐temperature cofired ceramics applications.     

Synthesis,Microstructure, and Microwave Dielectric Properties of Spinel ZnGa2O4 Ceramics

Spinel ZnGa₂O₄ ceramics were synthesized by conventional solid‐state method and their microwave dielectric properties were investigated. The phase evolution and microstructures of specimens were studied by XRD and SEM. The textured surface microstructures of ZnGa₂O₄ ceramics formed at high sintering temperatures. The spinel‐structured ZnGa₂O₄ ceramics sintered at 1385°C exhibited excellent microwave dielectric properties: a dielectric constant (ε_r) of 10.4, a quality factor (Q × f) of 94.600 GHz, and a temperature coefficient of resonant frequency (τ_f) of ?27 ppm/°C. ZnGa₂O₄ ceramics have a low sintering temperature, a wide temperature region, and a small negative τ_f value. They are promising candidate materials for millimeter‐wave devices.     

Novel Low‐Firing Forsterite‐Based Microwave Dielectric for LTCC Applications

A novel low‐temperature sintering microwave dielectric based on forsterite (Mg₂SiO₄) ceramics was synthesized through the solid‐state reaction method. The effects of LiF additions on the sinterability, phase composition, microstructure, and microwave dielectric properties of Mg₂SiO₄ were investigated. It demonstrated that LiF could significantly broaden the processing window (~300°C) for Mg₂SiO₄, and more importantly the sintering temperature could be lowered below 900°C, maintaining excellent microwave dielectric properties simultaneously. The 2 wt% LiF‐doped samples could be well‐sintered at 800°C and possessed a ε_r ~ 6.81, a high Q×f ~ 167 000 GHz, and a τ_f ~ ?47.9 ppm/°C, having a very good potential for LTCC integration applications.     

A Novel Temperature Stable Microwave Dielectric Ceramic with Garnet Structure: Sr2NaMg2V3O12

A garnet vanadate ceramic Sr₂NaMg₂V₃O₁₂ was prepared by the conventional solid‐state route, and the sinterability, microwave dielectric properties, and its chemical compatibility with Ag electrodes were investigated. Sr₂NaMg₂V₃O₁₂ sample could be well sintered at 900°C for 4 h with a relative density of 96.1%. X‐ray diffraction data showed that Sr₂NaMg₂V₃O₁₂ ceramics crystallized into a cubic garnet structure with a space group Ia‐3d over the sintering temperature range (830°C–930°C). The Sr₂NaMg₂V₃O₁₂ ceramic sintered at 900°C obtained the optimum microwave dielectric properties with a relative permittivity of 11.7, a Q×f of 37 950 GHz (at 11.0 GHz), and a almost zero τ_f value of ?2.9 ppm/°C. Chemical compatibility experiments showed no reaction between Sr₂NaMg₂V₃O₁₂ ceramics and Ag electrodes.     

Synthesis and microwave dielectric properties of new high quality Mg2NdNbO6 ceramics

New high‐quality microwave dielectric ceramics Mg₂NdNbO₆ were prepared by conventional solid‐state sintering method. The phases, micro‐structures and microwave dielectric properties of Mg₂NdNbO₆ ceramics were investigated at sintering temperature in the range of 1275°C‐1400°C. The X‐ray diffraction patterns showed that the peaks of the compounds were attributed to two phases, including the main crystalline phase of NdNbO₄ that was indexed as the monoclinic phase and MgO as the second phase. Well‐developed microstructures of Mg₂NdNbO₆ ceramics can be achieved, and the grain size reached the maximum value (1.63 μm) at 1375°C. As the sintering temperature increased, the dielectric constant, temperature coefficient of resonant frequency and apparent density remained almost unchanged, however, the significant change in the quality factor was observed. At 1375°C, Mg₂NdNbO₆ ceramics possessed excellent microwave dielectric properties: ε_r = 16.22, Q × f = 116 000 GHz and τ_f = ?30.96 ppm/°C.     

Srn+1TinO3n+1 (n=1, 2) microwave dielectric ceramics with medium dielectric constant and ultra‐low dielectric loss

Sr_n+1Ti_nO_3n+1 (n=1, 2) ceramics with tetragonal Ruddlesden–Popper structure were prepared via a standard solid‐state reaction process, and their microstructures and microwave dielectric properties were investigated systematically. The phase composition, grain morphology, and densification behavior were explored using X‐ray diffraction (XRD) and scanning electron microscopy (SEM). Outstanding microwave dielectric properties were achieved in the present ceramics: ε_r=42, Q × f=145 200 GHz, τ_f=130 ppm/°C for Sr₂TiO₄, and ε_r=63, Q × f=84 000 GHz, τ_f=293 ppm/°C for Sr₃Ti₂O₇, respectively. The present ceramics might be expected as excellent candidates for next‐generation medium‐permittivity microwave dielectric ceramics after the further optimization of τ_f value.     

Low‐firing and temperature stable microwave dielectric ceramics: Ba2LnV3O11 (Ln = Nd,Sm)

Low‐firing and temperature stable microwave dielectric ceramics of Ba₂LnV₃O₁₁ (Ln = Nd, Sm) were prepared by solid‐state reaction. X‐ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate the phase purity, crystal structure, sintering behavior, and microstructure. The XRD patterns indicated that Ba₂LnV₃O₁₁ (Ln = Nd, Sm) ceramics belong to monoclinic crystal system with P2₁/c space group in the whole sintering temperature range (800°C ‐900°C). Both ceramics could be well densified at 880°C for 4 hours with relative densities higher than 96%. The Ba₂LnV₃O₁₁ (Ln = Nd, Sm) samples sintered at 880°C for 4 hours exhibited excellent microwave dielectric properties: ε_r = 12.05, Q × f = 23 010 GHz, τ_f = ?7.7 ppm/°C, and ε_r = 12.19, Q × f = 27 120 GHz, τ_f = ?16.2 ppm/°C, respectively. Besides, Ba₂LnV₃O₁₁ (Ln = Nd, Sm) ceramics could be well co‐fired with the silver electrode at 880°C.     

A Novel Low‐Firing and Low Loss Microwave Dielectric Ceramic Li2Mg2W2O9 with Corundum Structure

The crystal structure and microwave dielectric properties of a novel low‐firing compound Li₂Mg₂W₂O₉ were investigated in this study. The phase purity and crystal structure were investigated using X‐ray diffraction analyses and Rietveld refinement. The best microwave dielectric properties of the ceramic with a low permittivity (ε_r) ~11.5, a quality factor (Q × f) ~31 900 GHz (at 10.76 GHz) and a temperature coefficient of the resonant frequency (τ_f) ~ ?66.0 ppm/°C were obtained at the optimum sintering temperature (920°C). CaTiO₃ was added into the Li₂Mg₂W₂O₉ ceramic to obtain a near zero τ_f, and 0.93Li₂Mg₂W₂O₉–0.07CaTiO₃ ceramic exhibited improved microwave dielectric properties with a near‐zero τ_f ~ ?1.3 ppm/°C, a ε_r ~21.6, a high Q_u × f value ~20 657 GHz. The low sintering temperature and favorable microwave dielectric properties make it a promising candidate for LTCC applications.     

Effects of Nb2O5 Doping on the Microwave Dielectric Properties and Microstructures of Bi2Mo2O9 Ceramics

This study investigated the effects of the addition of Nb₂O₅ and sintering temperature on the properties of Bi₂Mo₂O₉ ceramics. The ceramics were sintered in air at temperatures ranging from 620°C to 680°C. The addition of small amounts of Nb₂O₅ as a dopant significantly affected the crystalline phase and the microwave dielectric properties of the Bi₂Mo₂O₉ ceramics. The secondary phase, γ‐Bi₂MoO₆, was observed when Nb₂O₅ was added. However, unlike the Bi₂Mo₂O₉ ceramic without Nb₂O₅ sintered above 645°C, the ceramics with 3 mol% Nb₂O₅ contained no γ‐Bi₂MoO₆ when sintered at 660°C. The Q × f value and τ_f of the Bi₂Mo₂O₉ ceramics were improved by Nb₂O₅ doping. The Bi₂Mo₂O₉ ceramics doped with 2 mol% Nb₂O₅ exhibited the best microwave dielectric properties, with a permittivity of 36.5, a Q × f value (f = resonant frequency, Q = 1/dielectric loss at f) of 14100 GHz and τ_f of +5.5 ppm/°C after sintering at 620°C.     

Novel Series of Low‐Firing Microwave Dielectric Ceramics: Ca5A4(VO4)6 (A2+ = Mg,Zn)

Using a conventional solid‐state reaction Ca₅A₄(VO₄)₆ (A²⁺ = Mg, Zn) ceramics were prepared and their microwave dielectric properties were investigated for the first time. X‐ray diffraction revealed the formation of pure‐phase ceramics with a cubic garnet structure for both samples. Two promising ceramics Ca₅Zn₄(VO₄)₆ and Ca₅Mg₄(VO₄)₆ sintered at 725°C and 800°C were found to possess good microwave dielectric properties: ε_r = 11.7 and 9.2, Q × f = 49 400 GHz (at 9.7 GHz) and 53 300 GHz (at 10.6 GHz), and τ_f = ?83 and ?50 ppm/°C, respectively.