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1.
Sol–gel precursors to HfB2 and ZrB2 are processed by high‐energy ultrasonication of Hf,Zr oxychloride hydrates, triethyl borate, and phenolic resin to form precipitate‐free sols that turn into stable gels with no catalyst addition. Both precursor concentration and structure (a sol or a gel) are found to influence the synthesis of the diboride phase at high temperature. Decreasing sol concentration increases powder surface area from 3.6 to 6.8 m2/g, whereas heat‐treating a gel leads to residual oxides and carbides. Particles are either fine spherical particles, unique elongated rods, and/or platelets, indicating particle growth with directional coarsening. Investigation of the conversion process to ZrB2 indicates that a multistep reaction is likely taking place with: (1) ZrC formation, (2) ZrC reacts with B2O3 or ZrC reacts with B2O3 and C to form ZrB2. At low temperatures, ZrC formation is limiting, while at higher temperatures the reaction of ZrC to ZrB2 becomes rate limiting. ZrC is found to be a direct reducing agent for B2O3 at low temperature (~1200°C) to form ZrB2 and ZrO2, whereas at high temperatures (~1500°C) it reacts with B2O3 and C to form pure ZrB2.  相似文献   

2.
The thermal conductivity, thermal expansion, Youngs Modulus, flexural strength, and brittle–plastic deformation transition temperature were determined for HfB2, HfC0·98, HfC0·67, and HfN0·92 ceramics. The oxidation resistance of ceramics in the ZrB2–ZrC–SiC system was characterized as a function of composition and processing technique. The thermal conductivity of HfB2 exceeded that of the other materials by a factor of 5 at room temperature and by a factor of 2·5 at 820°C. The transition temperature of HfC exhibited a strong stoichiometry dependence, decreasing from 2200°C for HfC0·98 to 1100°C for HfC0·67 ceramics. The transition temperature of HfB2 was 1100°C. The ZrB2/ZrC/SiC ceramics were prepared from mixtures of Zr (or ZrC), SiB4, and C using displacement reactions. The ceramics with ZrB2 as a predominant phase had high oxidation resistance up to 1500°C compared to pure ZrB2 and ZrC ceramics. The ceramics with ZrB2/SiC molar ratio of 2 (25 vol% SiC), containing little or no ZrC, were the most oxidation resistant.  相似文献   

3.
《Ceramics International》2019,45(13):16097-16104
A precursor (PBSZ) for SiCw-ZrC-ZrB2 hybrid powder was synthesized by chemical reaction of phenol, paraformaldehyde, zirconium oxychloride, boric acid and tetraethylorthosilicate. Results show that zirconium, silicon and boron atoms have been successfully introduced into the branched structure. Decomposition of PBSZ is completed at 800 °C, and it gives amorphous carbon, SiO2, B2O3 and ZrO2 with a yield of 38% at 1200 °C. During the pyrolysis process, ZrB2 and SiC form at about 1500 °C, followed by the appearance of ZrC when the amount of B2O3 is limited. Highly crystallized ZrB2–ZrC–C powder with ZrB2 and ZrC grains evenly distributed in the carbon matrix together with randomly distributed SiC whiskers are obtained after heat-treated at 1800 °C. Further heated at 1900 °C, ZrB2 and ZrC grains grow from 200 to 500 nm, while SiC whiskers show a much smaller diameter size and tend to grow on the ZrB2–ZrC–C block surface. The morphology difference is caused by the larger gas supersaturation and accommodation coefficient of the pore channels on the block surface. In addition, defects of the carbon matrix are cumulated to the highest at 1500 °C and the structure-ordered carbon is obtained after heat treated at 1900 °C.  相似文献   

4.
A carbide boronizing method was first developed to produce dense boron carbide‐ zirconium diboride (“B4C”–ZrB2) composites from zirconium carbide (ZrC) and amorphous boron powders (B) by Spark Plasma Sintering at 1800°C–2000°C. The stoichiometry of “B4C” could be tailored by changing initial boron content, which also has an influence on the processing. The self‐propagating high‐temperature synthesis could be ignited by 1 mol ZrC and 6 mol B at around 1240°C, whereas it was suppressed at a level of 10 mol B. B8C–ZrB2 ceramics sintered at 1800°C with 1 mole ZrC and 10 mole B exhibited super high hardness (40.36 GPa at 2.94 N and 33.4 GPa at 9.8 N). The primary reason for the unusual high hardness of B8C–ZrB2 ceramics was considered to be the formation of nano‐sized ZrB2 grains.  相似文献   

5.
ABSTRACT

ZrB2–ZrC–SiC is one of the ultra-high-temperature ceramic composites with excellent properties. In this research, high-purity ZrB2–ZrC–SiC nanopowders were synthesised using a carbothermal reduction reaction at a relatively low temperature (1370°C) from cost-effective zirconium(IV) chloride by a sol–gel method. The effect of heat treatment temperature on the synthesis of ZrB2–ZrC–SiC composite powder was studied. X-ray diffractometry results showed that the phases ZrB2, β-SiC and ZrC were synthesised at 1370°C. The mean crystallite sizes for each of the phases were calculated using the Scherrer method. The specific surface area for the sample calcined at 1370°C was 81.479?m2?g?1. SEM observation revealed that the particles had a size lower than 250?nm. Backscattered electron image and map analysis with scanning electron microscopy showed that a suitable phase homogeneity was achieved, as confirmed by energy-dispersive X-ray spectroscopy.  相似文献   

6.
Electrical resistivities, thermal conductivities and thermal expansion coefficients of hot-pressed ZrB2–SiC, ZrB2–SiC–Si3N4, ZrB2–ZrC–SiC–Si3N4 and HfB2–SiC composites have been evaluated. Effects of Si3N4 and ZrC additions on electrical and thermophysical properties of ZrB2–SiC composite have been investigated. Further, properties of ZrB2–SiC and HfB2–SiC composites have been compared. Electrical resistivities (at 25 °C), thermal conductivities (between 25 and 1300 °C) and thermal expansion coefficients (over 25–1000 °C) have been determined by four-probe method, laser flash method and thermo-mechanical analyzer, respectively. Experimental results have shown reasonable agreement with theoretical predictions. Electrical resistivities of ZrB2-based composites are lower than that of HfB2–SiC composite. Thermal conductivity of ZrB2 increases with addition of SiC, while it decreases on ZrC addition, which is explained considering relative contributions of electrons and phonons to thermal transport. As expected, thermal expansion coefficient of each composite is reduced by SiC additions in 25–200 °C range, while it exceeds theoretical values at higher temperatures.  相似文献   

7.
In this study, two composition ZrB2–ZrC–WB composites were synthesized by reactive hot-pressing of Zr + B4C + WC powder mixtures at 1900 °C. The microstructure of the resulting composites was characterized by a combination of scanning electron microscopy and X-ray diffraction. It is seen that highly-dense ZrB2–ZrC–WB composites with a homogenous fine-microstructure were obtained after the sintering. The mechanical behavior of the composites was evaluated using by testing under four-point bend testing at room and high temperatures. The results show that the high-temperature strength of the ZrB2–ZrC–WB composites was substantially improved, compared to ZrB2–ZrC-based composites without WB. In addition, the elastic properties, electrical conductivity, hardness and fracture toughness of the composites were measured at room temperature. The results reveal that these properties were comparable to those of ZrB2–ZrC-based composites without WB.  相似文献   

8.
ZrB2–SiC–BN ceramics were fabricated by hot-pressing under argon at 1800 °C and 23 MPa pressure. The microstructure, mechanical and oxidation resistance properties of the composite were investigated. The flexural strength and fracture toughness of ZrB2–SiC–BN (40 vol%ZrB2–25 vol%SiC–35 vol%BN) composite were 378 MPa and 4.1 MPa m1/2, respectively. The former increased by 34% and the latter decreased by 15% compared to those of the conventional ZrB2–SiC (80 vol%ZrB2–20 vol%SiC). Noticeably, the hardness decreased tremendously by about 67% and the machinability improved noticeably compared to the relative property of the ZrB2–SiC ceramic. The anisothermal and isothermal oxidation behaviors of ZrB2–SiC–BN composites from 1100 to 1500 °C in air atmosphere showed that the weight gain of the 80 vol%ZrB2–20 vol%SiC and 43.1 vol%ZrB2–26.9 vol%SiC–30 vol%BN composites after oxidation at 1500 °C for 5 h were 0.0714 and 0.0268 g/cm2, respectively, which indicates that the addition of the BN enhances oxidation resistance of ZrB2–SiC composite. The improved oxidation resistance is attributed to the formation of ample liquid borosilicate film below 1300 °C and a compact film of zirconium silicate above 1300 °C. The formed borosilicate and zirconium silicate on the surface of ZrB2–SiC–BN ceramics act as an effective barriers for further diffusion of oxygen into the fresh interface of ZrB2–SiC–BN.  相似文献   

9.
《Ceramics International》2020,46(6):7099-7108
ZrB2–ZrC–SiC nanopowders with uniform phase distribution were prepared from cost-effective ZrOCl2·8H2O by a simple sol-gel method. The synthesis route, ceramization mechanism and morphology evolution of the nanopowders were investigated. ZrB2–ZrC–SiC ceramic precursor can be successfully obtained through hydrolysis and condensation reactions between the raw materials. Pyrolysis of the precursor was completed at 650 °C, and it produced ZrO2, SiO2, B2O3 and amorphous carbon with a yield of 39% at 1300 °C. By heat-treated at 1500 °C for 2 h, highly crystallized ZrB2–ZrC–SiC ceramics with narrow size distribution were obtained. With the holding time of 2 h, both the crystal size and the particle size can be refined. Further prolonging the holding time can lead to serious particles coarsening. Studies on the microstructure evolution of the generated carbon during the ceramic conversion demonstrates the negative effect of the ceramic formation on the structure order improvement of the carbon, due to the large amount of defects generated in it by the boro/carbothermal reduction reactions.  相似文献   

10.
A volatility diagram of zirconium carbide (ZrC) at 1600, 1930, and 2200°C was calculated in this work. Combining it with the existing volatility diagrams of ZrB2 and SiC, the volatility diagram of a ternary ZrB2‐SiC‐ZrC (ZSZ) system was constructed in order to interpret the oxidation behavior of ZSZ ceramics. Applying this diagram, the formation of ZrC‐corroded and SiC‐depleted layers and the oxidation sequence of each component in ZSZ during oxidation and ablation could be well understood. Most of the predictions from the diagrams are consistent with the experimental observations on the oxidation scale of dense ZrB2‐SiC‐ZrC ceramics/coatings after oxidation at 1600°C or ablation at 1930 and 2200°C. The reasons for the discrepancy are also briefly discussed.  相似文献   

11.
《应用陶瓷进展》2013,112(3):155-160
Abstract

In the present investigation, carbothermal synthesis technique is used for the production of ZrB2 whiskers. The synthesis is carried out by heating the mixture of ZrB2, H3BO3 and carbon black over the temperature range of 1300 to 1700°C in argon atmosphere. Different elements such as Ni, Co and Fe are tested for their role as catalysts. The synthesised powder contains ZrB2 as the major phase with minor phases of ZrC and B4C. Whisker yield is found to be low at lower temperatures (<1500°C) and then increases with the pyrolysis temperature. The Ni addition seems more effective as a catalyst than Co or Fe. Shorter length whiskers are found in the case of Co catalyst, whereas use of Fe catalyst shows whisker with rod shape and a special bird's nest type whiskers. The electron microscope study of whisker reveals the presence of various defects.  相似文献   

12.
Compressive creep studies have been carried out on hot‐pressed ZrB2–SiC (ZS) and ZrB2–SiC–Si3N4 (ZSS) composites in air under stress and temperature ranges of 93–140 MPa and 1300°C–1425°C, respectively for time durations of ≈20–40 h. The results of these studies have shown the creep resistance of ZS composite to be greater than that of ZSS. As the temperature is increased from 1300°C to 1425°C, the stress exponent of ZS decreases from 1.7 to 1.1, whereas that of ZSS drops from 1.6 to 0.6. The activation energies for these composites have been found as ≈95 ± 32 kJ/mol at temperatures ≤1350°C, and as ≈470 ± 20 kJ/mol in the range of 1350°C–1425°C. Studies of the postcreep microstructures using scanning and transmission electron microscopy have shown the presence of glassy film with cracks at both ZrB2 grain boundaries and ZrB2–SiC interfaces. These results along with calculated values of activation volumes suggest grain‐boundary sliding as the major damage mechanism, which is controlled by O2? diffusion through SiO2 at ≤1350°C, and by viscoplastic flow of the glassy interfacial film at temperatures ≥1350°C. Studies by transmission electron microscopy have shown formation of crystalline precipitates of Si2N2O near ZrB2–SiC interfaces in ZSS tested at ≥1400°C, which along with stress exponent values <1 suggests that grain‐boundary sliding involving solution‐precipitation‐type mechanism is operative at these temperatures.  相似文献   

13.
The tensile behavior of ZrB2‐SiC‐graphite composite was investigated from room temperature to 1800°C. Results showed that tensile strength was 134.18 MPa at room temperature, decreasing to 50.34 MPa at 1800°C. A brittle‐ductile transition temperature (1300°C) of ZrB2‐SiC‐graphite composite was deduced from experimental results. Furthermore, the effect of temperature on the fracture behavior of ZrB2‐SiC‐graphite composite was further discussed by microstructure observations, which showed that tensile strength was controlled by the relaxation of thermal residual stress below 1300°C, and was affected by the plastic flow during 1300°C and 1400°C. At higher temperature, the tensile strength was dominated by the changes of microstructures.  相似文献   

14.
A technique for densifying ultra high temperature ceramic composites while minimising grain growth is reported. As-purchased ZrB2 powder was treated with a zirconia-carbon sol–gel coating. Carbothermal reduction at 1450 °C produced 100–200 nm crystalline ZrC particles attached on the surface of ZrB2 powders. The densification behaviour of the sol–gel coated powder was compared with both the as-purchased ZrB2 and a compositionally similar ZrB2–ZrC mixture. All three samples were densified by spark plasma sintering (SPS). The ZrB2 reference sample was slow to densify until 1800 °C and was not fully dense even at 2000 °C, while the sol–gel modified ZrB2 powder completed densification by 1800 °C. The process was studied by ram displacement data, gas evolution, SEM, and XRD. The sol–gel coated nanoparticles on the ZrB2 powder played a number of important roles in sintering, facilitating superior densification by carbothermal reduction, nanoparticle coalescence and solid-state diffusion, and controlling grain growth and pore removal by Zener pinning. The sol–gel surface modification is a promising technique to develop ultra-high temperature ceramic composites with high density and minimum grain growth.  相似文献   

15.
《Ceramics International》2022,48(18):26499-26507
ZrB2–ZrC hybrid powders were synthesized by a novel two-step reduction on basis of ZrO2 + B4C + C→ ZrC + ZrB2 + CO reaction in Ar atmosphere, using ZrO2, B4C, and carbon black powders as starting materials. Thermodynamics of relevant reactions were evaluated. Effects of excess additions of B4C and C on phase constituents were investigated. Morphology and chemistry of the powder products were characterized by scanning electron microscopy (SEM), energy-dispersive spectrometry (EDS) and transmission electron microscopy (TEM). The results showed that ZrB2–ZrC hybrid powders with no obvious impurity content could be obtained after heating at 1350 °C for 1 h followed by further reaction at 1700 °C for 1 h with 16 wt% B4C + 8 wt% C excess addition. Relative contents of the ZrB2: ZrC phase in the product powders could be conveniently regulated by varying the B4C and C content in the starting compositions. The resultant powders had good oxidation resistance with an oxidation activation energy value of 433 kJ/mol. Good sinterability of the powder products was demonstrated by hot pressing at 1950 °C for 60min under 30 MPa pressure, which resulted in fully dense ZrB2–ZrC composite ceramics with Vickers hardness value larger than 18.3 ± 0.6 GPa.  相似文献   

16.
The present study investigates the effect of Ti addition on the microstructure development and phase evolution during spark plasma sintering of ZrB2–SiC ceramic composite. A ZrB2–20?vol% SiC sample with 15?wt% Ti was prepared by high-energy milling and spark plasma sintering at 2000?°C for 7?min under 50?MPa. The X-ray diffraction test, microstructural studies and thermodynamic assessments indicated the in-situ formation of several compounds due to the chemical reactions of Ti with ZrB2 and SiC. The Ti additive was completely consumed during the sintering process and converted to the ceramic compounds of TiC, TiB and TiSi2. In addition, another refractory phase of ZrC was also formed as a result of sidelong reaction of ZrB2 and SiC with the Ti additive.  相似文献   

17.
High temperature oxidation of ZrB2 and the effect of SiC on controlling the oxidation of ZrB2 in ZrB2–SiC composites were studied in situ, in air, using X-ray diffraction. Oxidation was studied by quantitatively analyzing the crystalline phase changes in the samples, both non-isothermally, as a function of temperature, up to ~1650 °C, as well as isothermally, as a function of time, at ~1300 °C. During the non-isothermal studies, the formation and transformation of intermediate crystalline phases of ZrO2 were also observed. The change in SiC content, during isothermal oxidation studies of ZrB2–SiC composites, was similar in the examined temperature range, regardless of sample microstructure and composition. Higher SiC content, however, markedly retarded the oxidation rate of the ZrB2 phase in the composites. A novel approach to quantify the extent of oxidation by estimating the thickness of the oxidation layer formed during oxidation of ZrB2 and ZrB2–SiC composites, based on fractional conversion of ZrB2 to ZrO2 in situ, is presented.  相似文献   

18.
The formation of a porous SiC‐depleted region in ZrB2–SiC due to active oxidation at ultrahigh temperatures was characterized. The presence/absence of SiC depletion was determined at a series of temperatures (1300°C–1800°C) and times (5 min–100 h). At T < 1627°C, SiC depletion was not observed. Instead, the formation of a ZrO2 + C/borosilicate oxidation product layer sequence was observed above the ZrB2–SiC base material. At T ≥ 1627°C, SiC was depleted in the ZrB2 matrix below the ZrO2 and borosilicate oxidation products. The SiC depletion was attributed to active oxidation of SiC to form SiO(g). The transition between C formation in ZrO2 (T < 1627°C) and SiC depletion in ZrB2 (T ≥ 1627°C) is attributed to variation in the temperature dependence of thermodynamically favored product assemblage influenced by the local microstructural phase distribution. The growth kinetics of the SiC depletion region is consistent with a gas‐phase diffusion‐controlled process.  相似文献   

19.
The oxidation and recession of four plain weave carbon fiber reinforced ZrB2-SiC-ZrC composites with different matrix compositions were compared with those of a plain weave carbon fiber reinforced ZrB2-SiC matrix composite. These composites were fabricated using a silicon melt infiltration method. The composite with the higher ZrC content also formed ZrSi2 in the matrix instead of residual silicon. The composites were oxidized at 1700 and 1800 °C in an oxygen–hydrogen torch environment. The oxides consisted of ZrO2 and SiO2, which formed on the surface of all samples. Carbon fiber at the surface was lost due to oxidation. The recession resistance of ZrB2-SiC-ZrC matrix composites remained constant at 1700 °C, even if the matrix composition varied, while the resistance at 1800 °C increased with the matrix of ZrC and ZrSi2. The ZrB2-SiC-ZrC matrix composite with the higher ZrC and ZrSi2 compositions formed a sintered ZrO2-rich layer, which was denser than the ZrO2-SiO2 and improved the recession resistance.  相似文献   

20.
A study has been carried out to examine the effect of LaB6 addition on the compressive creep behavior of ZrB2-SiC composites at 1300–1400°C under stresses between 47 and 78 MPa in laboratory air. The ZrB2-20 vol% SiC composites containing LaB6 (10% in ZSBCL-10 and 14% in ZSBCL-14) besides 5.6% B4C and 4.8% C as additives were prepared by spark plasma sintering at 1600°C. Due to cleaner interfaces and superior oxidation resistance, the ZSBCL-14 composite has exhibited a lower steady-state creep rate at 1300°C than the ZSBCL-10. The obtained stress exponent (n ∼ 2 ± 0.1) along with cracking at ZrB2 grain boundaries and ZrB2-SiC interfaces are considered evidence of grain boundary sliding during creep of the ZSBCL-10 composite. However, the values of n ∼ 1 and apparent activation energy ∼700 kJ/mol obtained for the ZSBCL-14 composite at 1300–1400°C suggest that ZrB2 grain boundary diffusion is the rate-limiting mechanism of creep. The thickness of the damaged outer layer containing cracks scales with temperature and applied stress, indicating their role in facilitating the ingress of oxygen causing oxide scale growth. Decreasing oxidation-induced defect density with depth to a limit of ∼280 μm, indicates the predominance of creep-based deformation and damage at the inner core of samples.  相似文献   

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