织构和界面粗糙度对NiFe/FeMn双层膜交换偏置场的影响

采用磁控溅射方法制备NiFe/FeMn双层膜（分别以Ta、Cu作为缓冲层，Ta作为保护层）。实验发现，以Ta为缓冲层的NiFe/FeMn双层膜的交换偏置场比以Cu为缓冲层的NiFe/FeMn双层膜的交换偏置场大，而矫顽力却很小。我们从织构、界面粗糙度两方面对其中的原因进行了分析。以Ta为缓冲层的NiFe/FeMn双层膜有好的织构且NiFe/FeMn界面较平滑，这引起了较强的交换偏置场和较低的矫顽力。     

不同缓冲层对NiFe/FeMn双层膜交换耦合场的影响

采用磁控溅射方法制备了NiFe/FeMn双层膜 ,分别以Ta ,Cu作为缓冲层 ,Ta作为保护层。实验发现 ,以Ta为缓冲层的NiFe/FeMn双层膜的交换耦合场比以Cu为缓冲层的NiFe/FeMn双层膜的交换耦合场大 ,而矫顽力却很小。本文分别从织构、界面粗糙度、界面偏聚等几方面对其中的原因进行了分析。除不同缓冲层引起的织构、界面粗糙度不同对交换耦合场有影响外 ,不同缓冲层引起的界面偏聚对交换耦合场也有影响     

插层Bi对NiFe/FeMn双层膜交换偏置场的影响及其XPS分析

在Ta／Cu／NiFe／FeMn／Ta薄膜中,我们曾发现Cu在NiFe层的表面偏聚导致NiFe／FeMn薄膜的交换偏置场降低。为了抑制Cu的表面偏聚,我们在Ta／Cu／NiFe／FeMn／Ta薄膜中在Cu／NiFe界面沉积Bi插层。实验发现,沉积适当厚度的Bi插层可以将NiFe／FeMn双层膜的交换偏置场提高1倍。XPS分析表明,在Cu／NiFe界面沉积的插层Bi有效地抑制了Cu在NiFe表面的偏聚,提高了交换偏置场。     

Influence of metal spacer on the properties and microstructure of multilayer films and analyses

Ta/NiFe/nonmagnetic metal spacer/FeMn/Ta films were prepared by magnetron sputtering. The dependence of the exchange coupling field (H_ex) between the FeMn and NiFe layers on the thickness of a nonmagnetic metal spacer layers was investigated systematically. The results show that H_ex decreases rapidly with increasing thicknesses of the Bi and Ag spacer layers. It decreases gradually, however, with an increase in the thickness of the Cu spacer layer. We found empirically that H_ex corresponds to the lattice match between spacer layer atoms and NiFe layer atoms. However, the results of X-ray photoelectron spectroscopy show that when a small amount of Bi atoms are deposited on the NiFe/FeMn interface, they migrate to the FeMn layer surface and hardly influence H_ex.     

Ion beam deposition and structural characterization of GMR spinvalves

NiO exchange-biased “bottom” spin valves of the type NiO/NiFe/Co/Cu/Co/NiFe and FeMn exchange-biased “top” spin valves of the type NiFe/Co/Cu/Co/NiFe/FeMn were deposited by ion-beam deposition (except the NiO layer). Their magnetic properties, magneto-transport, and microstructures are characterized and compared with corresponding GMR spin valves deposited by dc magnetron sputtering. High-resolution cross-sectional transmission electron microscopy and X-ray diffraction reveal microstructural differences between ion-beam-deposited and dc magnetron sputtered spin valves. In particular, film texture, surface morphology, GMR ratio, exchange bias, interlayer coupling strength, and coercivity vary widely, but property-structure-processing correlation can be identified. A GMR ratio of ~9.7% was obtained on random textured NiO exchange-biased bottom spin valves by ion-beam deposition     

硬磁/反铁磁交换耦合对反铁磁FeMn稳定性影响研究

采用磁控溅射方法在SiO2基体上制备了FePt/FeMn/NiFe/Ta多层膜样品,通过FeMn/NiFe双层膜交换偏置的变化研究了硬磁FePt不同磁化状态对反铁磁层FeMn的影响。实验表明,磁化了的L10相FePt能使FeMn在较薄的情况下(4.5nm)对NiFe产生比较强的交换偏置;而未被磁化的FePt对FeMn/NiFe交换偏置影响并不明显。认为更薄的反铁磁层对另外的铁磁层产生交换偏置是由于硬磁与反铁磁的界面交换耦合作用能增强反铁磁的稳定性。     

磁控溅射法制备IrMn底钉扎自旋阀研究

采用高真空直流磁控溅射的方法,在玻璃衬底上制备了结构为Ta／buffer layer／IrMn／CoFe／Cu／CoFe／NiFe／Ta的IrMn底钉扎自旋阀。研究了NiFe和Cu作为缓冲层对自旋阀磁性能的影响,并对缓冲层厚度进行了参数优化,当缓冲层厚度为2nm时自旋阀各项性能达到最佳。研究了退火制度对底钉扎自旋阀性能的影响,得到了30000e强磁场下200℃保温1h为最佳处理条件。通过结构的改善和工艺的优化,得到的底钉扎自旋阀的磁电阻率8．51％,矫顽场为0．50e,交换偏置场超过8000e。最后对自旋阀的底钉扎和顶钉扎结构进行了比较。     

Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure

Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations.     

Carbon nitride as a buffer layer for magnetic thin films

Amorphous carbon nitride (CN_{x, 0.1<x<0.3}) thin films present a unique combination of hardness and compliance and may be useful for incorporation into ferromagnetic multilayers. We present a study of the use of amorphous CN_x as a buffer layer for NiFe magnetic thin films. The surface roughness of the NiFe films is comparable to films on Ta or Cu buffer layers and is stable with annealing at 200 °C. Effects on the magnetization and coercivity are seen, and may be due to several mechanisms, including chemical reactions at the interface and interdiffusion.     

不同缓冲层和保护层对NiFe/PtMn双层膜磁性的影响

制备了以Ta和非磁性NiFeCr作为缓冲层和保护层的NiFe/PtMn双层膜,研究了它们的结构和物性,结果表明:用NiFeCr做缓冲层和保护层的NiFe/PtMn双层膜,其交换偏置场比以Ta为缓冲层和保护层的NiFe/PtMn的交换偏置场有了10%的提高;退火处理以后,以NiFeCr为缓冲层和保护层的样品的磁性层NiFe的磁矩降低要小于以Ta为缓冲层和保护层的样品的磁性层NiFe的磁矩降低.同时,XRD测量计算发现,以NiFeCr为缓冲层生长的NiFe/PtMn样品比Ta为缓冲层生长的NiFe/PtMn样品具有更好的织构,更大的平均晶粒尺寸,因而具有更好的热稳定性.NiFeCr比Ta更适合做基于Mn合金为反铁磁层的缓冲层和保护层.     

Enhanced exchange field of NiO/NiFe biyer by dual ion beam sputtering process control

Dual IBS (Ion Beam Sputtering) technique was used to fabricate NiO/NiFe bilayers. Various process conditions were examined to enhance the exchange field of the bilayer. Ion beam sputtering with an ion beam voltage above the threshold voltage and with the optimum ion beam current produced a fine-grained and smooth NiO film. This fine-grained surface followed by optimum etching exhibited an enhanced exchange field of 100 Oe. Growing NiO films were ion bombarded with a secondary ion-beam source having various beam voltages. The texture, surface roughness and grain size of the NiO films changed due to the ion bombardment; however, the grain size and/or surface roughness rather than texture was found to be responsible for controlling the exchange coupling. Furthermore, it was demonstrated that an optimum etching time of the NiO film prior to the depositing of NiFe for a large exchange field exists. With this optimum etching of the NiO film, surface segregated impurities could be eliminated without deteriorating the surface unnecessarily. Exchange fields and coercivities of the NiO/NiFe bilayers were measured with a MOKE (Magneto–Optic Kerr Effect) hysteresis looper and the surface properties of NiO films were examined with an AFM (Atomic Force Microscope) and an AES (Auger Electron Spectroscope).     

Influence of Interface Roughness, Film Texture, and Magnetic Anisotropy on Exchange Bias in [Pt/Co]3/IrMn and IrMn/[Co/Pt]3 Multilayers

Co/Pt multilayers can exhibit considerable exchange bias along the film normal when grown onto or covered by an antiferromagnetic IrMn layer. The magnitude of the bias effect depends strongly on the selection of the buffer layers and is largest for Co/Pt multilayers with small perpendicular anisotropy. This counterintuitive result is explained by opposite dependencies of exchange bias and magnetic anisotropy on the degree of film texture and grain size. Interface roughness also influences the perpendicular exchange bias field. The largest biases are measured on smooth films. Interlayer mixing during post-deposition annealing procedures decreases the exchange bias field of IrMn-capped Co/Pt multilayers.     

Broadband microwave absorption in [NiFe/FeMn]n exchange-coupled multilayer films

[NiFe/FeMn]_n exchange-coupled multilayer films have been fabricated on the silicon substrate by magnetron sputtering deposition. The static and dynamic magnetic properties of multilayer films have been investigated with varying numbers of layers. The results show that the linewidth and permeability of imaginary resonance peak are increased with increasing numbers of layers. For the NiFe/FeMn/NiFe sample, the resonance frequency shows a different shift with applying external magnetic field along the direction of easy and hard magnetization axis of the sample, respectively, indicating a different magnetic reversal process in two ferromagnetic layers. It proved that the increase of linewidth was originated from the different interface exchange coupling.     

NiFe/IrMn多层膜制备及MgO掺杂研究

采用磁控溅射制备了Ta/NiFe/IrMn/Ta薄膜,研究了反铁磁IrMn的溅射功率和铁磁层NiFe厚度对多层膜交换偏置场的影响。在反铁磁IrMn中插入MgO,发现MgO含量对交换偏置场有一定影响。随着MgO含量的增加,多层膜的交换偏置场逐渐增大,当MgO的含量约为2.5%交换偏置场达到最大值。随着MgO含量进一步增加交换偏置场下降。在IrMn中插入适量的MgO可以有效地增加交换偏置场。     

Effects of current density and deposition time on electrical resistivity of electroplated Cu layers

This study was performed to investigate the effects of current density and deposition time on sheet resistance and resistivity of electroplated Cu layer. Cu layer covered on sputtered Si/Ta/22Cu-78Ta/Cu films was electroplated with current densities of 1, 1.5 and 2 A/dm², and the deposition times varied from 20 to 100 min. The effects of current density and deposition time on the thickness of Cu layers and the current efficiency were investigated. The variation in sheet resistance and resistivity were discussed with respect to thickness, surface roughness, microstructure, grain size, and texture. In general, it was found that surface roughness might not be the dominate parameter, but the density of nodule boundary in the porous films would affect the electrical property of the electroplating Cu. An increasing extent of the (1 1 1) preferred orientation tends to loosen the nodules and lower the sheet resistance and resistivity of Cu layers. A decrease in the current density and an increase in deposition time tend to produce a Cu layer with (1 1 1) preferred orientation and results in relatively low sheet resistance and resistivity.     

Effects of current density and deposition time on electrical resistivity of electroplated Cu layers

This study was performed to investigate the effects of current density and deposition time on sheet resistance and resistivity of electroplated Cu layer. Cu layer covered on sputtered Si/Ta/22Cu-78Ta/Cu films was electroplated with current densities of 1, 1.5 and 2 A/dm², and the deposition times varied from 20 to 100 min. The effects of current density and deposition time on the thickness of Cu layers and the current efficiency were investigated. The variation in sheet resistance and resistivity were discussed with respect to thickness, surface roughness, microstructure, grain size, and texture. In general, it was found that surface roughness might not be the dominate parameter, but the density of nodule boundary in the porous films would affect the electrical property of the electroplating Cu. An increasing extent of the (1 1 1) preferred orientation tends to loosen the nodules and lower the sheet resistance and resistivity of Cu layers. A decrease in the current density and an increase in deposition time tend to produce a Cu layer with (1 1 1) preferred orientation and results in relatively low sheet resistance and resistivity.     

缓冲层Ta对退火Co/Cu/Co薄膜微观结构和界面互扩散的影响

用直流磁控溅射法在Si/SiO₂基底上制备了Co/Cu/Co薄膜和加入缓冲层的Ta/Co/Cu/Co薄膜,用扫描电子显微镜、原子力显微镜、X射线衍射和俄歇电子能谱研究了薄膜的微观结构、表面形貌、织构和界面互扩散现象。结果表明:退火后薄膜中均存在{111}和{002}衍射峰,加入缓冲层Ta后,Co/Cu/Co薄膜的衍射峰强度明显增强,并存在较强的{111}纤维织构,薄膜表面孔洞及粗糙度大幅减小。退火后薄膜界面处产生互扩散现象,层状结构被破坏。缓冲层Ta提高了薄膜与基底材料间的润湿性,可有效缓解界面互扩散现象。     

Structural and tunneling properties of magnetic tunnel junctions with Al-O and MgO barrier

Two types of magnetic tunnel junctions (MTJs) with the configuration: substrate Si(1 0 0)/SiO₂ 47 nm/buffer/IrMn 12 nm/CoFe 2.5 nm/Al-O 1.5 nm/NiFe 3 nm/Ta 5 nm and Si(1 0 0)/SiO₂ 47 nm/buffer/IrMn 10 nm/CoFeB 3 nm/MgO 2 nm/CoFeB 4 nm/Ta 5 nm were prepared by the sputtering technique with two different buffers: A-Cu 25 nm and B-Ta 5 nm/Cu 25 nm. The B buffer caused a high texture of MTJs whereas in the case of the A buffer junctions texture was weak. Crystallites in the textured layers grew in a columnar like shape that induced interfacial roughness. High textured buffer B caused high interfacial roughness that reduced the resistance-area (RA) product due to a barrier thickness fluctuation. RA also changed substantially depending on the type of a barrier. The highest RA product ∼15 MΩ μm² was achieved for a low textured junction with Al-O barrier whereas in the high textured MgO sample RA product was ∼100 kΩ μm². Tunnel magnetoresistance (TMR) measured at room temperature was about 45% for the samples with Al-O barrier, whereas for the samples with MgO barrier TMR was about three times higher and achieved 140%.     

Magnetic and Structural Properties in Co/Cu/Co Sandwiches with Ni and Cr Buffer Layers

1. IntroductionThe gial magnetoresistance (GMR) effect occursin multilayers of ferromagnet ic / nonmagnet ic met almultilayers and sandwiches[1'2]. Many material systems, such as Fe/Crl'], Co/Cut'l, have exhibited theGMR properties. The saturation field in these multilayers is usually very large due to the strong exchange coupling field between the adjacent magneticlayers. Non-coupled type multilayers consisting of twomagnetic components with different coercive forces,and relatively thick …     

Influence of a Pb buffer layer on structural and magnetotransport properties of Co/Cu multilayers

In this paper changes of structure and magnetotransport properties of Co/Cu multilayers were observed as a function of the Pb buffer layer thickness. Structural analysis indicated that the Pb buffer leads to the decay of superlattice periodicity. Surface topography of the top layer of the Co/Cu multilayers observed by SFM allowed the determination of surface roughness which is relatively large and weakly depends on buffer thickness. This effect is accompanied by the continuous rise of island size that reaches a diameter around 200 nm for Co/Cu multilayers deposited on 40 nm Pb buffer. AES experiments show significant segregation of Pb to the surface. A small magnetoresistance effect ΔR/R measured for Co/Cu multilayers deposited on an Pb buffer is almost independent of the thickness of the buffer layer. This behavior of ΔR/R could be understood by assuming that discontinuous ferromagnetic layers, bridged through the Cu spacer, are formed.