采用有机前驱体制备Si3N4／SiC纳米复相陶瓷

本研究采用有机前驱体为主要原料，通过热解及烧结制备了两类Ｓｉ３Ｎ４／ＳｉＣ纳米复相陶瓷，研究了这些材料的微结构特点，讨论了材料强化的机制及力学性能与显微结构的关系。     

Si3N4／纳米SiC复相陶瓷的研究

采用纳米ＳｉＣ粉体制备了Ｓｉ３Ｎ４／纳米ＳｉＣｐ复相陶瓷。研究了制备工艺、纳米ＳｉＣ含量对材料性能及显微结构的影响,并对材料显微结构特点与强韧化机制进行了分析 。结果表明：添加２０ｖｏ％〈１００ｎｍ的ＳｉＣ粉体时,复相陶瓷的室温抗弯强度达８５６ＭＰａ,当添加１０ｖｏ％上述ＳｉＣ粉体时,复相陶瓷的增韧效果最佳,断裂韧性达８．２７ＭＰａｍ＾１／２,比基体材料提高了２３％。     

Si3N4／SiCp复相陶瓷研究现状及进展

详细介绍了ＳｉＮ４／ＳｉＣｐ复相陶瓷的研究现状，着重论述了Ｓｉ３Ｎ４／ＳｉＣｐ纳米复相陶瓷的制备工艺及发展趋势。     

纳米SiC—Ca—α—Sialon复相陶瓷的研究

研究了用表面活性剂有效地分散纳米ＳｉＣ粉体中的聚集体的实验过程，发现分散状态取于表面活性剂用量、ＰＨ值和浸 Ｓｉ３Ｎ４，ＡｌＮ，ＣａＣＯ３３和纳β－ＳｉＣ为原料粉料，用反应热压法制备了不同ＳｉＣ含量的纳米ＳｉＣ－Ｃａ－αｓｉａｌｏｎ复相陶瓷，并分别其相组成，力学性能和显微结构等进行了研究。     

Si_3N_4／SiCp复相陶瓷研究现状及进展

详细介绍了Ｓｉ３Ｎ４／ＳｉＣｐ复相陶瓷的研究现状，着重论述了Ｓｉ３Ｎ４／ＳｉＣｐ纳米复相陶瓷的制备工艺及发展趋势。     

溶胶-凝胶法制备纳米碳化硅粉的几种影响因素

以蔗糖和正硅酸乙酯（ＴＥＯＳ）为前驱体,对溶胶－－凝胶法制备纳米碳化硅粉工艺中的几种影响因素：ｐＨ值、去离子水量、蔗糖加入先后顺序等进行了研究。ＸＲＤ分析结果,过量水导致Ｓｉ（ＯＲ）４的充分水解,并形成高度交联的水解聚合物。由于交联程度高兴是１４００℃反应时只能得到大粒径的无定型二氧化硅,不能得到β－ＳｉＣ。适量水与ＴＥＯＳ反应时,无论是在酸碱条件下都能得到粒径为１５￣２０ｎｍ左右的β－ＳｉＣ粉。     

纳米SiC－Ca－α－Sialon复相陶瓷的研究

研究了用表面活性剂有效地分散纳米ＳｉＣ粉体中的聚集体的实验过程，发现分散状态取决于表面活性剂用量、ｐＨ值和浸泡时间。以Ｓｉ３Ｎ４，ＡｌＮ，ＣａＣＯ３和纳米βＳｉＣ为原始粉料，用反应热压法制备了不同ＳｉＣ含量的纳米ＳｉＣＣａαｓｉａｌｏｎ复相陶瓷，并分别对其相组成、力学性能和显微结构等进行了研究。     

纳米SiC—Si3N4复合超细粉末的研制

用热化学气相反应法制备了纳米级ＳｉＣ－Ｓｉ３Ｎ４复合超细粉末，讨论了工艺参数对复合超细粉末颗粒度、组成、结构等的影响，并制备出颗粒呈球形、颗粒尺寸均匀、分散性好、最小颗粒尺寸为８９Ａ的纳米级ＳｉＣ－Ｓｉ３Ｎ４复合超细粉末。     

氧化反应结合SiC基陶瓷的制备与性能

本文采用反应结合制备方法,通过对坯体进行预氧化使ＳｉＣ颗凿表面氧化形成ＳｉＯ２,而后在烧成中与添中剂ＡＩ２Ｏ３－Ｙ２Ｏ３反应,使坯体气化率减少,制备了多孔ＳｉＣ基陶瓷。文章探讨了坯体中ＳｉＣ的氧化特征、反应结合过程和相变化以及它们对烧结体性能的影响。     

多相悬浮混合法制备Al2O3-SiC(n)纳米复合陶瓷

采用多相悬浮混合制备纳米ＳｉＣ均匀分布在基质Ａｌ２Ｏ３中的纳米复合陶瓷,分别研究了加入分散剂ＰＭＡＡ－ＮＨ４后纳米ＳｉＣ和亚微米级Ａｌ２Ｏ３在水悬浮液中的分散稳定性,得出了两种单相水悬浮液高稳定,高分散的条件,并得出两相混合悬浮液均匀分散以及共同絮凝的条件,获得均分散的纳米复合陶次粉体,热压瓷体在力学性能得到相明显改善。     

Combustion of silicon powders containing organic additives in nitrogen gas under pressure: 2. Composition of combustion products

Combustion of silicon powders containing organic dopants in nitrogen gas under pressure was found to yield a mixture of α-Si₃N₄, β-Si₃N₄, SiC, and Si₂N₂O. Relative amount of these compounds in combustion product was found to depend on the pressure of nitrogen gas, type and concentration of dopants, combustion geometry, and cooling rate. The formation of α-Si₃N₄ was found to occur in the presence of oxygen-containing dopants. The type of dopant was also found to affect the morphology of product particles.      

有机聚硅氧烷在医药中的应用进展

总结了硅橡胶、硅油、硅树脂在医药中的应用,并介绍了硅烷化技术在药物合成、蛋白质分析检测等生物工程方面的应用和一些新型抗肿瘤、抗癌的含硅药物及多孔硅膜的药物缓释体系的发展。     

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

Nitridation behavior of silicon powder compacts of various thicknesses with Y2O3 and MgO as sintering additives

The effects of the nitriding temperature (1300 and 1350°C), holding time (0‐4 hours), and thickness of Si powder compacts on the nitridation behavior of silicon were investigated by examining the nitridation rates, analyzing phase compositions, and observing the microstructures of nitrided compacts. Si powder compacts doped with Y₂O₃ and MgO as sintering additives were prepared with thicknesses of 3, 6, and 9 mm. The phases of nitrided compacts were transformed from Si to α‐Si₃N₄ and β‐Si₃N₄ with an increase in the nitriding temperature and holding time. The degree of nitridation increased with the nitriding temperature and holding time. The β/(α+β) ratio increased with the nitriding temperature and holding time, and with a decrease in the thickness of the Si powder compacts. However, all compacts exhibited the same tendency for a higher β/(α+β) ratio at the compact surface than in the bulk of the compact. The variation in the β/(α+β) ratio for each compact decreased with an increase in the nitriding temperature and holding time.     

Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K

The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO₂ film apparently was the rate-controlling process.     

Volatility Diagrams for Silica, Silicon Nitride, and Silicon Carbide and Their Application to High-Temperature Decomposition and Oxidation

Volatility diagrams—isothermal plots showing the partial pressures of two gaseous species in equilibrium with the several condensed phases possible in a system—are discussed for the Si-O and Si-N systems, and extended to the Si-N-O and Si-C-O systems, in which the important ceramic constituents SiO₂, Si₃N₄, Si₂N₂O, and SiC appear as stable phases. Their use in understanding the passiveactive oxidation transitions for Si, Si₃N₄, and SiC are demonstrated.     

Mössbauer Study of the Influence of Fe-Si-N Liquid in the Synthesis of β-Si3N4 from Silica

Mössbauer spectra of the products obtained by carbothermal reduction and distribution of silica in the presence of iron in the temperatures range 1200^o to 1540^o were studied. The preponderance of β- Si₃N₄ over the α form at a higher reaction temperature were assumed to be related to the formation of an Fe-Si-N liquid. The liquid did not alter its composition with the variation of reduction-temprature, Iron had no effect on the reaction mechanism below 1300^oC.     

Superplastic Deformation in Silicon Nitride–Silicon Oxynitride In Situ Composites

Starting with a mixture of ultrafine β-Si₃N₄ and a SiO₂-containing additive, a superplastic Si₃N₄-based composite was developed, using the concept of a transient liquid phase. Significant deformation-induced phase and microstructure evolutions occurred in the nonequilibrium, fine-grained Si₃N₄ material, which led to the in situ development of a Si₃N₄–22-vol%-Si₂N₂O composite and strong texture formation. The unusual ductility of the composites with elongated Si₂N₂O grains was attributed to the fine-grained microstructure, the presence of a transient liquid phase, and the alignment of the elongated Si₂N₂O grains. The mechanical properties of the resultant composite were enhanced rather than impaired by superplastic deformation and subsequent heat treatment; the resultant composite exhibited both high strength (957 MPa) and high fracture toughness (4.8 MPa·m^1/2).     

Texture Development in Silicon Nitride–Silicon Oxynitride In Situ Composites via Superplastic Deformation

Silicon nitride–silicon oxynitride (Si₃N₄–Si₂N₂O) in situ composites have been fabricated via either the annealing or the superplastic deformation of sintered Si₃N₄ that has been doped with a silica-containing additive. In this study, quantitative texture measurements, including pole figures and X-ray diffraction patterns, are used in conjunction with scanning electron microscopy and transmission electron microscopy techniques to examine the degree of preferred orientation and texture-development mechanisms in these materials. The results indicate that (i) only superplastic deformation can produce strong textures in the β-Si₃N₄ matrix, as well as Si₂N₂O grains that are formed in situ ; (ii) texture development in the β-Si₃N₄ matrix mainly results from grain rotation via grain-boundary sliding; and (iii) for Si₂N₂O, a very strong strain-dependent texture occurs in two stages, namely, preferred nucleation and anisotropic grain growth.     

化妆品中用硅粉、硅悬浮液的最新技术(日)

硅是化妆品生产不可缺少的原料之一。介绍了硅粉、硅悬浮液用于化妆品生产的最新技术, 特别是毛发调理产品中的应用。硅粉作为固体原料有望成为化妆品中新产品的生产原料。