The interpretation of EBIC images using Monte Carlo simulations

Charge collection microscopy, usually known by the acronym EBIC (Electron Beam Induced Current) imaging, is a powerful technique for the observation and characterization of semiconductor materials and devices in the scanning electron microscope. Quantitative interpretation of EBIC images is often difficult because of the problem of accurately representing the electron-beam interaction with the semiconductor. This paper uses a Monte Carlo technique to simulate the electron-beam interaction, and it is shown that this permits simple analytical point-source solutions to be generalized to fully represent the experimental situation of an extended, non-uniform, carrier source. The model is demonstrated by application to EBIC imaging in the Schottky barrier geometry.     

Study of atomic resolved plasmon-loss image by spherical aberration-corrected STEM-EELS method

To gain an understanding of a plasmon-loss image obtained with an atomic resolution scanning transmission electron microscope (STEM)-electron energy loss spectroscopy (EELS) method, the detailed analysis is experimentally and theoretically performed. In order to theoretically explain a plasmon-loss image, a dynamical simulation method of the plasmon-loss image combined with a first-principle calculation is firstly proposed. By making comparisons between simulated and experimental plasmon-loss images, we find that the experimental plasmon-loss images closely resemble the high-angle bright-field STEM images, which show the reverse contrast of the corresponding high-angle annular dark-field STEM image.     

Simulation of scanning transmission electron microscope images on desktop computers

Two independent strategies are presented for reducing the computation time of multislice simulations of scanning transmission electron microscope (STEM) images: (1) optimal probe sampling, and (2) the use of desktop graphics processing units. The first strategy is applicable to STEM images generated by elastic and/or inelastic scattering, and requires minimal effort for its implementation. Used together, these two strategies can reduce typical computation times from days to hours, allowing practical simulation of STEM images of general atomic structures on a desktop computer.     

Observation of microdiffraction patterns with a dedicated STEM instrument

A two-dimensional detector system, designed for the observation and recording of microdiffraction patterns formed in an HB 5 scanning transmission electron microscope (STEM) is described and discussed. Possibilities are described and demonstrated for the simultaneous or successive recording of microdiffraction patterns from regions of diameter 3 å or more, bright- or dark-field STEM images, EELS spectra, secondary electron images, and in-line holograms. Applications of the system have been made to studies of catalyst particles, reflection-mode imaging of bulk surfaces, and image reconstruction from microdiffraction patterns obtained from each point of a STEM image.     

Secondary electron detection in the scanning transmission electron microscope

In a dedicated scanning transmission electron microscope (STEM) secondary electron images with high spatial resolution and good contrast can be obtained. Two types of detector are described. These take into account the secondary electrons which depend on the post-specimen field strength of the objective lens. Due to the thinness of the samples and the collection geometry the images differ from those obtained in a convectional scanning microscope. Examples are given where secondary electron images augment the information obtained by the more commonly used imaging modes.     

An expanded approach to noise reduction from high-resolution STEM images based on the maximum entropy method

An expanded use of the maximum entropy method (MEM) is suggested to reduce noise from an experimental high-angle annular dark-field (HAADF) scanning transmission electron microscope (STEM) image. The MEM is combined with an estimate of the standard deviation of noise from an experimental HAADF STEM image and low-pass filtering using the information limit for an incoherent STEM image. Consequently, the present method has just one parameter of a Lagrange multiplier. It is demonstrated that the present method can reduce noise efficiently in high-resolution HAADF STEM images.     

A new cryo‐STEM method for imaging food colloids in the scanning electron microscope

A new cryo‐scanning transmission electron microscopy (cryo‐STEM) technique for imaging casein micelles in a field emission scanning electron microscope is presented. Thin films of micellar casein suspensions on lacey carbon grids were prepared using a modified sample holder developed by Gatan UK. Bright and dark field images were obtained at ?135°C showing casein micelles in their frozen hydrated state and in the size range 30–500 nm. Results were compared favorably with published images of casein micelles obtained with conventional cryo‐transmission electron microscopy, suggesting that cryo‐STEM is a useful alternative technique for visualizing food colloids close to their native state. SCANNING 32: 150–154, 2010. © 2010 Wiley Periodicals, Inc.     

Artifacts in aberration-corrected ADF-STEM imaging

The introduction of an experimental black level may introduce unintended artifactual details into high-resolution annular dark field scanning transmission electron microscopy (ADF-STEM) lattice images. This article presents the multislice simulation results of such possible situations. Three simulated scanning transmission electron microscopy (STEM) probes of sizes 0.8, 1.2 and 2.0 A are scanned on the surface of a <1;10> oriented Si/Ge crystal. The simulation results suggest that high-frequency artifact peaks will appear in the power spectra when an artificial black level clips the lowest (background) signal. The lowest signal in an ADF-STEM image decreases as the incident probe shrinks in size. Therefore, care must be taken when interpreting the resolution limit of the microscope from images taken with nonzero black level setting, especially in case of sub-A microscope. The simulation result is compared with an experimental image and they agree with each other. The analysis suggests that aberration corrected STEM provide sensitive low level detail.     

High-resolution scanning near-field EBIC microscopy: application to the characterisation of a shallow ion implanted p+-n silicon junction

High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p⁺–n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p–n junctions with a resolution of about 20 nm.     

Observation of an undecagold cluster compound in the scanning transmission electron microscope

A water-soluble undecagold cluster compound has been shown to be visible in moderate dose images (10⁴ electrons/nm²) obtained with the scanning transmission electron microscope (STEM). The properties of this compound render it potentially useful as a marker for specific sites within biological molecules.     

A high-voltage scanning transmission electron microscope at Nagoya University

A high-voltage scanning transmission electron microscope (STEM) H-1250ST of the maximum accelerating voltage of 1.25 MV was constructed at Nagoya University in 1983. The microscope, equipped with a field-emission gun, is designed with high-level STEM performance as well as conventional transmission microscopy mode operation. The aim of developing the microscope, basic design schemes, principal instrumentation, and techniques developed are described.     

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

Although electron beam-induced current (EBIC) technique was invented in the seventies, it is still a powerful technique for failure analysis and reliability investigations of modern materials and devices. Time-resolved and stroboscopic microanalyses using sampling Fourier components decomposed by modulated charge carrier excitation are introduced. Quantitative determination of electric field strengths within dynamically operated devices in the scanning electron microscope (SEM) will be demonstrated. This technique allows investigations of diffusion and drift processes and of variations of electric field distributions inside active devices.     

Simulation of annular dark field stem images using a modified multislice method

The multislice method of image simulation has been extensively applied to conventional transmission electron micrographs (CTEM), but not yet to scanning transmission electron micrographs (STEM). In this paper the multislice method is adapted for application to the STEM and several examples relevant to the VG-HB501 STEM are presented. Annular dark field images of a (111) crystal silicon substrate supporting a single heavy atom are calculated.     

Nanofabrication of cylindrical STEM specimen of InGaAs/GaAs quantum dots for 3D-STEM observation

We demonstrate the multiazimuth observation (360 degrees in principle) of InGaAs/GaAs quantum dots (QDs) by means of a 300 kV scanning transmission electron microscope (STEM), where both cross-sectional and plan-view observations are performed on a single STEM specimen for the first time. A cylindrical specimen with a diameter of 200-300 nm including the QD layer inside along the rotation axis was fabricated by the focused ion beam (FIB) technique, with the application of a newly developed mesa-cutting method to adjust the position and angle of the QD layer precisely. The 360 degrees STEM observation is realized by mounting the cylindrical specimen on a holder equipped with a specimen-rotation mechanism. High potential of 3D-STEM observation is briefly presented by showing high contrast images of QDs, dark field images, and moire fringes with various incident angles.     

The conversion of a field-emission scanning electron microscope to a high-resolution,high-performance scanning transmission electron microscope,while maintaining original functions

Recently, the reliability of field-emission electron guns has increased. In addition, the cost of computer systems for on-line processing has dropped. Hence, we should now consider the use of scanning transmission electron microscopy (STEM) for routine work, especially, in the field of biology where one may expect to utilize digital image processing techniques. An STEM has been constructed, without disturbing the original functions, by converting a commercial scanning electron microscope equipped with a fieldemission gun. The STEM is generally operated at accelerating voltage 30 kV, focal length 7.5 mm, and beam current 1?2 × 10^?10 A. Several improvements have been incorporated for removing the effects of vibration, contamination, and stray magnetic fields. Also, an adjustable detector aperture was utilized. The modified instrument was connected to an on-line digital image processing system for utilizing the information obtained from STEM images. The advantages of the modified system were studied from various viewpoints.     

Scanning image detection (SID) system for conventional transmission electron microscope (CTEM) images

A new image detection system has been developed to display transmission electron microscope (TEM) images on a CRT without a video camera system. Deflection coils placed in both the upper space of an objective lens and in the lower space of the first intermediate lens scan a small electron probe simultaneously. The electrical signal acquired through an improved scintillator and a photomultiplier is synchronized with the scanning signal and displayed in a similar fashion to a conventional scanning TEM (STEM) instrument. A preliminary system using a 100 kV conventional TEM (CTEM) equipped with a hairpin-type electron gun, produced an image with a spatial resolution of 1 nm.     

Thick specimens in the CEM and STEM. Resolution and image formation.

A theory of resolution and image formation is presented for thick amorphous specimens in transmission electron microscopes. Eight modes of operation are considered, four in the scanning transmission electron microscope (STEM) and four in the conventional electron microscope (CEM). A thick specimen is defined here as one in which the resolution of detail is limited by plural scattering of the electron beam. In practice this includes films on the order of a micron in thickness. An analytic theory of plural incoherent scattering is developed which is general with respect to material and beam voltage. The theory gives the distribution of elastically scattered electrons as a function of transverse coordinate and angles, and is directly applicable to optical systems. The theory applies to all thicknesses normally encountered, and includes thin specimens as well as thick specimens. Criteria are proposed for evaluation of the quality of microscope images, and the modulation transfer function is applied to determine some practical estimates of picture quality. The STEM is found to have distinct advantages over the CEM for thick specimens. For a carbon specimen one micron thick a STEM operating in bright field at 90 keV produces an image which is roughly equivalent to that of a CEM operating in bright field at 1 MeV. Improvement can be obtained in the CEM by filtering out eneryg-loss electrons which degrade resolution due to chromatic aberration. This results in a reduction in signal intensity and usable thickness, however.     

Comments on ultra-high-resolution STEM

The resolution of an image in a scanning transmission electron microscope may be improved if an image of the specimen is recorded for each point in the nanodiffraction pattern. It is shown that the method suggested by Rodenburg et al. (Ultramicroscopy 48 (1993) 304) may serve as the basis for an experimentally feasible scheme in which a resolution of better than 0.1 nm is achieved for regions of 1 nm diameter chosen from normal STEM images.     

Use of sputter coating to prepare whole mounts of cytoskeletons for transmission and high-resolution scanning and scanning transmission electron microscopy

This paper describes the use of sputter coating to prepare detergent-extracted cytoskeletons for observation by scanning (SEM), scanning transmission (STEM), inverted contrast STEM, and transmission (TEM) electron microscopy. Sputtered coats of 1–2 nm of platinum or tungsten provide both an adequate secondary electron signal for SEM and good contrast for STEM and TEM. At the same time, the grain size of the coating is sufficiently fine to be just at (platinum) or below (tungsten) the limit of resolution for SEM and STEM. In TEM, the granular structure of platinum coats is resolved, and platinum decoration artifacts are observed on the surface of structures. The platinum is deposited as small islands with a periodic distribution that may reveal information about the underlying molecular structure. This method produces samples that are similar in appearance to replicas prepared by low-angle rotary shadowing with platinum and carbon. However, the sputter-coating method is easier to use; more widely available to investigators; and compatible with SEM, STEM, and TEM. It may also be combined with immunogold and other labeling methods. While TEM provides the highest resolution images of sputter-coated cytoskeletons, it also damages the specimens owing to heating in the beam. In SEM and STEM cytoskeletons are stable and the resolution is adequate to resolve individual microfilaments. The best single method for visualizing cytoskeletons is inverted contrast STEM, which images both the metal-coated cytoskeletal structures and electron-dense material within the nucleus and cytoplasm as white against a dark background. STEM and TEM were both suitable for visualizing colloidal gold particles in immunolabeled samples.     

Monte Carlo simulation of CL and EBIC contrasts for isolated dislocations

Electron beam-induced current (EBIC) and cathodoluminescence (CL) are widely used to investigate semiconductor materials and devices, particularly to obtain information on the recombination properties and the geometry of defects. This report describes a simple formulation of CL and EBIC contrasts based on the Born approximation of excess carrier density in the presence of a pointlike defect. Quantitative interpretation of the CL and EBIC images is often difficult because of a lack of accurate theory treating simultaneously both the details of the electron beam penetration in the semiconductor and the generation of EBIC and CL signals. To overcome this difficulty, the Monte Carlo approach to the phenomenon of the electron beam penetration in solids has been developed to calculate the CL and EBIC signals during a simulation of the electron trajectory. Results for an inclined dislocation in GaAs are presented.