Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope

The backscattered electron (BSE) signal in the scanning electron microscope (SEM) can be used in two different ways. The first is to give a BSE image from an area that is defined by the scanning of the electron beam (EB) over the surface of the specimen. The second is to use an array of small BSE detectors to give an electron backscattering pattern (EBSP) with crystallographic information from a single point. It is also possible to utilize the EBSP detector and computer-control system to give an image from an area on the specimen--for example, to show the orientations of the grains in a polycrystalline sample ("grain orientation imaging"). Some further possibilities based on some other ways for analyzing the output from an EBSP detector array, are described.     

Secondary electron emission in the scanning electron microscope

The secondary electron emission induced by electrons in the energy range 2.5–25 keV was measured in a SEM. Values of the emission coefficient for C, Al, Cu, Mo, Ag and Au are presented showing that it varies systematically with atomic number. The coefficient is still appreciable at 25 keV beam energy. The signal from the secondary electron collector in the SEM includes large contributions from sources other than secondary electron emission from the specimen. These contributions are discussed and their relative importance measured. Physics Abstracts classification numbers: 0.690, 8.900     

The scanning low-energy electron microscope: First attainment of diffraction contrast in the scanning electron microscope

Using small Pb crystals deposited in situ on a partially contaminated Si (100) crystal, we demonstrate that a commercial scanning electron microscope (SEM) can easily be converted into a scanning low-energy electron microscope (SLEEM). Although the contrast mechanism is much more complicated than that in nonscanning LEEM because not only one diffracted monochromatic beam and its close environment are used for imaging, but several diffracted beams and a wide energy spectrum of electrons of different origin (secondary electrons, inelastically andelastically scattered electrons) are used, SLEEM is a valuable addition to the standard SEM because it provides an additional structure- and orientation-sensitive contrast mechanism in crystalline materials, a low sampling depth, and high intensity at low energies.     

Note: Mechanical and electrical characterization of nanowires in scanning electron microscope

This note presents two experimental techniques for mechanical and electrical characterization of individual nanowires inside a scanning electron microscope (SEM). Tensile testing is realized by transferring a nanowire to a microelectromechanical systems device that stretches the nanowire and measures the elongations and tensile forces. The device consists of an electrostatic actuator and two capacitive sensors, capable of acquiring all measurement data (force and displacement) electronically without relying on electron microscopy imaging. For electrical characterization, four-point probe measurement of individual nanowires is performed automatically by controlling four nanomanipulators with SEM visual feedback. A feedforward controller is incorporated into the control system to improve the response time. This work represents advances in nanomaterial testing and automated nanomanipulation.     

Mechanical scanning of the specimen in the scanning electron microscope

A scanning electron microscope (SEM) system equipped with a motor drive specimen stage fully controlled with a personal computer (PC) has been utilized for obtaining ultralow magnification SEM images. This modem motor drive stage works as a mechanical scanning device. To produce ultra-low magnification SEM images, we use a successful combination of the mechanical scanning, electronic scanning, and digital image processing techniques. This new method is extremely labor and time saving for ultra-low magnification and wide-area observation. The option of ultra-low magnification observation (while maintaining the original SEM functions and performance) is important during a scanning electron microscopy session.     

Secondary electron detection in the scanning transmission electron microscope

In a dedicated scanning transmission electron microscope (STEM) secondary electron images with high spatial resolution and good contrast can be obtained. Two types of detector are described. These take into account the secondary electrons which depend on the post-specimen field strength of the objective lens. Due to the thinness of the samples and the collection geometry the images differ from those obtained in a convectional scanning microscope. Examples are given where secondary electron images augment the information obtained by the more commonly used imaging modes.     

Electron spectroscopy in the scanning electron microscope

The combination of ultra high vacuum scanning electron microscopy with spectroscopy of the emitted electrons gives new possibilities for surface analysis. The paper surveys recent results in secondary, Auger, ionization loss, and elastic peak electron spectroscopy.     

Wear experiments in the scanning electron microscope

Wear experiments using a ball-on-flat configuration were performed in a scanning electron microscope. The sequence of events occurring during the initial or wear-in phase was followed for three different materials: these were mild steel, brass and aluminum. Differences in behavior among the materials were striking. Adhesion and prow formation were observed in the aluminum experiment. A change from sharp microstriations to increasing macrodeformation was characteristic of the behavior of the mild steel. In addition, readily identifiable microstriations persisted for many cycles of sliding contact on the steel surface, while on the brass surface these features changed with each cycle. Microscopic extrusions and lip formation were observed to progress from asperities to incipient wear debris. The tendency for debris to transfer to the harder surface and to influence striation formation in the opposing surface was observed.     

Nanotip electron gun for the scanning electron microscope

Experimental nanotips have shown significant improvement in the resolution performance of a cold field emission scanning electron microscope (SEM). Nanotip electron sources are very sharp electron emitter tips used as a replacement for the conventional tungsten field emission (FE) electron sources. Nanotips offer higher brightness and smaller electron source size. An electron microscope equipped with a nanotip electron gun can provide images with higher spatial resolution and with better signal-to-noise ratio. This could present a considerable advantage over the current SEM electron gun technology if the tips are sufficiently long-lasting and stable for practical use. In this study, an older field-emission critical dimension (CD) SEM was used as an experimental test platform. Substitution of tungsten nanotips for the regular cathodes required modification of the electron gun circuitry and preparation of nanotips that properly fit the electron gun assembly. In addition, this work contains the results of the modeling and theoretical calculation of the electron gun performance for regular and nanotips, the preparation of the SEM including the design and assembly of a measuring system for essential instrument parameters, design and modification of the electron gun control electronics, development of a procedure for tip exchange, and tests of regular emitter, sharp emitter and nanotips. Nanotip fabrication and characterization procedures were also developed. Using a "sharp" tip as an intermediate to the nanotip clearly demonstrated an improvement in the performance of the test SEM. This and the results of the theoretical assessment gave support for the installation of the nanotips as the next step and pointed to potentially even better performance. Images taken with experimental nanotips showed a minimum two-fold improvement in resolution performance than the specification of the test SEM. The stability of the nanotip electron gun was excellent; the tip stayed useful for high-resolution imaging for several hours during many days of tests. The tip lifetime was found to be several months in light use. This paper summarizes the current state of the work and points to future possibilities that will open when electron guns can be designed to take full advantage of the nanotip electron emitters.     

Secondary electron imaging in the variable pressure scanning electron microscope

Secondary electron imaging is not possible in the variable pressure scanning electron microscope because the mean free path of the secondaries in the gas is too short to permit them to reach the detector. This paper therefore investigates an alternative strategy for producing an image containing significant amounts of secondary electron contrast. This involves modifying the microscope by the addition of a biased electrode above the sample and then collecting a specimen current signal. This system, originally described by Farley and Shah (1988), is found to produce true secondary electron detail over a wide range of conditions.     

Annular electron energy-loss spectroscopy in the scanning transmission electron microscope

We study atomic-resolution annular electron energy-loss spectroscopy (AEELS) in scanning transmission electron microscopy (STEM) imaging with experiments and numerical simulations. In this technique the central part of the bright field disk is blocked by a beam stop, forming an annular entry aperture to the spectrometer. The EELS signal thus arises only from electrons scattered inelastically to angles defined by the aperture. It will be shown that this method is more robust than conventional EELS imaging to variations in specimen thickness and can also provide higher spatial resolution. This raises the possibility of lattice resolution imaging of lighter elements or ionization edges previously considered unsuitable for EELS imaging.     

Biological structures imaged in a hybrid scanning transmission electron microscope and scanning tunneling microscope

A hybrid scanning transmission electron microscope (STEM) and scanning tunneling microscope (STM) is described which allows simultaneous imaging of biological structures adsorbed to electron-transparent specimen supports in both modes of scanning microscopy, as demonstrated on uncoated phage T4 polyheads. We further discuss the reproducibility and validity of height data obtained from STM topographs of biomacromolecules and present raw data from topographs of freeze-dried, metal-coated nuclear envelopes from Xenopus laevis oocytes.     

Resolution limits in the surface scanning electron microscope

An approximate theory is developed for estimating the limiting topographical resolution of the scanning electron microscope operating under certain idealized conditions. Limitations imposed by electron beam shot noise and electron diffusion effects within the specimen are considered for the case of an instrument incorporating a field emission source and in which there is ideal collection of the secondary electron signal. The specimen is assumed to be an homogeneous, isotropic solid with the beam incident normally to its surface. It is estimated that, under these ideal conditions, the limiting resolution for a metallic specimen lies in the region of 1 nm. The possibilities of realizing a resolution of this order in a practical instrument are discussed.     

Signal components in the environmental scanning electron microscope

We demonstrate that the gas-amplified secondary electron signal obtained in the environmental scanning electron microscope has both desired and spurious components. In order to isolate the contributions of backscattered and secondary electrons, two sets of samples were examined. One sample consisted of a pair of materials having similar secondary emission coefficients but different backscatter coefficients, while the other sample had a pair with similar backscatter but different secondary emission coefficients. Our results show how the contribution of the two electron signals varies according to the pressure of the amplifying gas. Backscatter contributions, as well as background due to gas ionization from the primary beam, become significant at higher pressure. Furthermore, we demonstrate that the relative amplification efficiencies of various electron signals are dependent upon the chemistry of the gas.     

Use of Monte Carlo modeling for interpreting scanning electron microscope linewidth measurements

A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam/specimen interaction, accurate edge location cannot be obtained. A Monte Carlo code has been developed to model the interaction of an electron beam with one or two lines lithographically produced on a multilayer substrate. The purpose of the code is to enable one to extract the edge position of a line from SEM measurements. It is based on prior codes developed at the National Institute of Standards and Technology, but with a new formulation for the atomic scattering cross sections and the inclusion of a method to simulate edge roughness or rounding. The code is currently able to model the transmitted and backscattered electrons, and the results from the code have been applied to the analysis of electron transmission through gold lines on a thin silicon substrate, such as is used in an x-ray lithographic mask. Significant reductions in backscattering occur because of the proximity of a neighboring line.     

Gigahertz stroboscopy with the scanning electron microscope

The application of the stroboscopic scanning electron microscope to gigahertz Gunn effect devices is discussed. Two modes of operation, the deflection mode and the bunching mode, are considered. In the bunching mode, using 1.5 ps beam pulses, two-dimensional voltage contrast in a Gunn effect device triggered at 1 GHz has been observed. A powerful technique for a device in pulsed operation is also presented. With this technique, the nonuniform domain propagation in the three-dimensional-structure Gunn device in pulsed operation has been clearly observed. The duty cycle of the pulsed operation has been 4x10(-3).