SiO2膜增强InGaAsP超晶格外延片的量子阱混合

对晶格与InP匹配的InGaAsP超晶格结构外延片,运用等离子增强化学气相沉积法镀SiO2膜,随后用碘钨灯快速热退火,进行无杂质空位扩散(IFVD)技术的实验研究,测量光致发光谱后得到了最大50nm的峰值位置蓝移;表明在没有掺杂和没有应变的情况下,IFVD仍有较好的处理量子阱材料的能力.对影响IFVD工艺的重复性因素进行了探讨.     

使用SiO_2介质膜实现InGaAsP量子阱混杂

报道了使用SiO2 介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验,得到2 0 0nm的最大带隙波长蓝移.另外,采用量子阱混杂制作了蓝移的FP腔激光器,其性能与未混杂的激光器相当     

使用SiO2介质膜实现InGaAsP量子阱混杂

报道了使用SiO2介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验,得到200nm的最大带隙波长蓝移.另外,采用量子阱混杂制作了蓝移的FP腔激光器,其性能与未混杂的激光器相当.     

磷离子注入诱导InGaAsP／InP双量子阱混合的研究

本文用光荧光(PL)方法研究了磷离子注入具有两个不同发射波长的InGaAsP/InP双量子阱结构引起的混合。注入能量为120keV,剂量范围为1×1011-1×1014/cm2。注入后,在高纯氮保护下,样品在700℃进行快速热退火30秒。实验结果表明,小剂量注入(～1011/cm2)能较好地诱导近表面阱的混合,且两个阱保持了不同发射波长,说明离子注入诱导量子阱混合与注入深度有关。大剂量注入(>1012/cm2)时,发射波长为1.59μm量子阱混合的程度(蓝移值大于130nm)超过了1.52μm量子阱混合的程度,且两个阱的PL发射峰基本上合并成一个单峰。     

InGaAsP量子阱混合技术理论及模拟研究

本文以品格中原子的扩散理论为基础,分析了四元系InGaAsP半导体材料中Ⅲ、Ⅴ族原子的扩散规律,建立了量子阱和超晶格结构中量子阱混合(QWI)的理论模型,模拟计算了半导体材料中组分浓度与扩散长度的关系,以及应变与扩散长度的关系,计算分析了应变对量子阱带隙、带结构和量子跃迁的影响,获得了一些有价值的结论,为量子阱混合试验和量子阱及超晶格集成器件的开发和研究提供了重要的理论基础。     

含磷组分薄膜对InGaAsP/InP多量子阱无序处理的影响

报道了采用不同的电介质薄膜SiO2、SiOxNy、Si3N4和SiOxPyNz及其组合用于InGaAsP/InP多量子阱材料的包封源.在高纯氮气保护下经850℃、7s的快速退火处理,结果发现:含磷组分SiOxPyNz电介质薄膜包封下的InGaAsP/InP量子阱带隙展宽十分显著,高达224meV,PL谱峰值波长蓝移342nm,半宽较窄仅为25nm,说明量子阱性能保持十分良好,并对此现象的成因做了初步分析.     

超晶格和量子阱红外探测器研究进展

本文综述了超晶格和量子阱红外探测器的发展。文章简要地阐明了超晶格和量子阱的原理,详细地介绍了业已发展的各种超晶格和量子阱红外探测器的原理、结构和性能等。还介绍了几种最有希望用于探测器制造的超晶格材料。     

含磷组分薄膜对InGaAsP/InP多量子阱无序处理的影响

报道了采用不同的电介质薄膜SiO2、SiOxNy、Si3N4和SiOxPyNz及其组合用于InGaAsP/InP多量子阱材料的包封源.在高纯氮气保护下经850℃、7s的快速退火处理,结果发现:含磷组分SiOxPyNz电介质薄膜包封下的InGaAsP/InP量子阱带隙展宽十分显著,高达224meV,PL谱峰值波长蓝移342nm,半宽较窄仅为25nm,说明量子阱性能保持十分良好,并对此现象的成因做了初步分析.     

Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPE

The effects of different growth interrupt schemes at the compositional interfaces in 30 period InGaAs(P)/InP superlattices grown by metal-organic vapor phase epitaxy have been studied for quarternary compositions λ = 1.35 and 1.52 μm as well as for the ternary case λ = 1.67 μm. The best full width at half maximum of the photoluminescence peaks at 4 K are 7–8 meV for the InGaAsP/InP and 4.6 meV for the InGaAs/InP superlattices indicating extremely high optical quality and vertical homogenity of the samples. However, strong memory effects relating to both the presence and the absence of arsenic are evident from x-ray diffraction measurements. Reactor purging as a remedy is limited by the surface roughening and defect formation induced by a non-equilibrium vapor phase composition. Optimal growth interrupts must therefore be determined considering both the interface smoothness and abruptness and will in general be composition dependent.     

激光作用下多量子阱混迭的热动力学分析

对ＩｎＧａＡｓ／ＩｎＧａＡｓＰ多量子阱材料,根据温度场方程计算了两种激光作用下多量子阱混迭技术（ＰＡＩＤ及ＰＬＤ）的横向空间选择性,得到ＰＡＩＤ在一般情况下的横向空间选择性为１００μｍ量级,而ＰＬＤ的理论极限为１００μｍ。同时分析了混迭多量子阱材料的能带结构与组分扩散长度的关系,从理论上提出了低温量子阱材料与扩散长度之间的关系曲线。     

PECVD沉积SiOP电介质膜及其XPS研究

采用等离子体增强化学气相沉积(PECVD)技术沉积含P电介质薄膜,用于无杂质空穴扩散(IFVD)技术中InGaAsP-InP MQW结构中新的包封层,替代传统的SiO2层。经X射线光电子谱(XPS)研究证明,该膜就是SiOP结构。快速退火(RTA)研究表明,该膜结构基本稳定,但膜中P原子存在明显扩散,它增强了InPMQW结构中In原子的外扩,却抑制了Ga原子的外扩。这些都明显区别于常规SiO2膜的性质。     

基于空间控制的ICP量子阱混杂技术

本文提出了一种针对InP/InGaAsP材料,基于空间控制技术的ICP量子阱混杂方法。同一片晶片上带隙能量的偏移程度可以通过掩膜上图形的不同占空比灵活的控制。通过一组优化的参数包括ICP-RIE刻蚀深度,二氧化硅沉积厚度,退火过程等,一个样品上,同时实现了五个不同的蓝移,其中最大的蓝移量达到75nm。结果显示在单片集成器件特别是多带隙结构器件的制作中这是一种有效的方法。     

Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices

The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. In the case of the InGaAs/InGaAsP system, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, which leads to a simple way to obtain three different bandgaps in a single intermixing step.     

Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells

The optical emission characteristics of biaxially compressed InAs _x P_{1− x} /InP strained single quantum well (QW) structures, with nominal compositionx=0.67, have been investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. The highly strained QWs exhibit intense and narrow PL in the 0.9–1.5 μm wavelength range, similar to the lattice-matched InGaAs(P)/InP system. The 20 K PLE spectra exhibit well-resolved features attributed ton=1 heavy hole (E1H1) and light hole (E1L1) transitions in the 1.0–1.5 μm wavelength range. In addition, features attributed to transitions betweenn=2 electrons and heavy holes (E2H2), and betweenn=1 electrons and unconfined holes (E1Hf), were observed. The energy splitting between the heavy-hole and light-hole bands was found to be a sensitive measure of the band offsets in the system. The best prediction of this splitting was obtained for a valence band offset of δE _V ∼0.25δE _G . This value of band offset was in agreement with the energy position of the E1Hf transition. The observed transition energies were also compared with the results of a finite square well model, taking into account the effects of strain, and the results offer further support for the band offset assignment. This study indicates that the InAsP system may be advantageous for application in strained-layer optoelectronic devices operating in the 1.3–1.6 μm wavelength range.     

Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers

Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with In_xGa_1-xAs single quantum well and GaAs(h ₁)In _x Ga_1−x As(h ₂) thin strained superlattice active layers where 0.25≤x ≤ 0.4. All of the samples were grown by molecular beam epitaxy. Hall effect at 77 K, photoluminescence at 2 K, in-situ reflection high energy electron diffraction, and transmission electron microscopy measurements are discussed. Critical layer thickness measurements are compared with the Matthews-Blakeslee theory. Photoluminescence transition energies are compared with a self-consistent solution to Schrodinger’s and Poisson’s equations.     

基于无杂质空位混杂法制备带有无吸收窗口的940nm GaInP/GaAsP/GaInAs半导体激光器研究

为提高940nm半导体激光器抗灾变性光学损伤(COD)能力,采用无杂质空位量子阱混杂技术制备了带有无吸收窗口的940nm GaInP/GaAsP/GaInAs半导体激光器。借助光致发光光谱分析了退火温度和介质膜厚度对GaInP/GaAsP/GaInAs单量子阱混杂的影响;通过电化学电容-电压(EC-V)方法检测了经高温退火后激光器外延片的掺杂浓度分布的变化情况。实验发现,在875℃快速热退火条件下,带有磁控溅射法制备的200nm厚的SiO2盖层样品发生蓝移达29.8nm,而电子束蒸发法制备的200nm厚TiO2样品在相同退火条件下蓝移量仅为4.3nm。两种方法分别对蓝移起到很好的促进和抑制作用。将优化后的条件用于带有窗口结构的激光器器件制备,其抗COD能力提高了1.6倍。     

采用IFVD-QWI技术制备电吸收调制DFB激光器

采用等离子体增强化学气相沉积 (PECVD) 法在I nGaAsP多量子阱/InP缓冲层/InGaAs层上沉积SiO₂薄膜,通过N₂气氛下快速热退火(RTA )方法实现无杂质空位扩散(IFVD)的量子阱混杂(QWI)。对不同退火温度下量子 阱增益峰值波长的蓝移特性进行了实验摸索,在780℃@80s的退火条 件下,可以获得最大72.8nm的相对波长 蓝移量,并且发现快速热退火RTA温度低于780℃以下时,LD区的波长 蓝移量随温 度变化基本能控制在10nm以内。 通过选取合适退火条件实现了光荧光(PL)峰值波长约50nm的蓝移量, 在选区制备出合适带隙波长材料的基 础上,在LD区制作全息光栅并二次外延P型掺杂电接触层后,采用标准化浅脊波导电吸收 调制(EAM)分布反馈 激光器(EML)工艺制备了1.5μm波长的EML管芯,器件阈值为 20m A,出光功率达到2mW@90mA,静态消光比在＋6V反偏压下为9.5dB。