高级串行通信控制器SAB82525及其应用

文章介绍了串行通信控制器SAB82 5 2 5的结构原理、工作模式及进程 ,并给出了基于SAB82 5 2 5的应用系统设计。在该系统中 ,采用 4片SAB82 5 2 5构成了两条总线型通信链路 ,实现了灵活、可靠的串行数据通信     

采用BGA封装的表面安装技术

主要介绍国外迅速发展起来的新型微电子表面安装技术——BGA 封装现状、特点、种类、工艺要求及其发展。     

基于虚拟机架构下嵌入式开发环境搭建的研究与实现

随着计算机技术、网络技术和微电子技术的深入发展,嵌入式系统的应用无处不在.而要进行嵌入式开发之前首先必须先搭建好嵌入式开发环境.本文首先介绍嵌入式开发流程和组合方案的分析与设计,然后实现交叉编译环境的构建方法和技巧,包括操作系统以及连接器、编译器、调试器在内的软件开发工具搭建方法.最后通过一个具体的例子来测试搭建的开发...     

先进芯片封装技术

微电子技术的飞速发展推动了新型芯片封装技术的研究和开发。本文主要介绍了几种新型芯片封装技术的特点,并对未来的发展趋势及方向进行了初步分析。     

先进芯片封装技术

微电子技术的飞速发展也同时推动了新型芯片封装技术的研究和开发。本文主要介绍了几种新型芯片封装技术的特点,并对未来的发展趋势及方向进行了初步分析。     

先进芯片封装技术

微电子技术的飞速发展也同时推动了新型芯片封装技术的研究和开发。本文主要介绍了几种新型芯片封装技术的特点,并对未来的发展趋势及方向进行了初步分析。     

微电子工艺器件计算机辅助设计及辅助教学交互系统

微电子CAD（计算机辅助设计）+GAI（计算机辅助教学）FORWINDOWSPC交互系统的开发成功，对微电子CAD技术的推广应用及高等学校的教学应用等各方面有着极其重要的作用。本文介绍了该系统开发思路、结构与功能。     

先进芯片封装技术

微电子技术的飞速发展也推动了新型芯片封装技术的研究和开发。本文主要介绍了几种新型芯片封装技术的特点。并对未来的发展趋势及方向进行了初步分析。     

SMT用印制板与无铅焊接

一、前言 微电子技术的飞速发展和电子产品小型化、轻量化及高可靠的要求，使表面贴装元器件在电子产品中的应用日益广泛，表面安装技术因此也成为电子装联工艺的主流。作为表面贴装元器件的安装、连结和支撑的载体——SMT用印制板也有了相应的发展和进步，对表面安装元器件与印制板焊接连接用的焊料，也逐步由传统的锡铅合金焊料逐步向无铅焊料过渡。[第一段]     

基于陶瓷基板微系统T/R组件的焊接技术研究

陶瓷基板微系统T/R组件具有体积小、密度高、轻量化等特点,正在逐步取代传统微组装砖式T/R组件。在微系统封装新技术路线的引领下,T/R组件对于微电子焊接技术的需求发生了较大变化。针对基于陶瓷基板微系统T/R组件的微电子焊接技术展开了论述,重点阐述了新技术路线与传统技术路线对于技术需求的差异,对围框钎焊、焊球/焊柱钎焊、基板与器件钎焊、高密度键合及盖板气密封焊等关键技术进行了介绍,归纳并总结了近年来相关技术领域的研究现状,并给出了现有技术水平条件下满足高可靠、低成本封装需求的最优工艺方法,为微电子焊接技术的发展提供了参考。     

Reliability of Au bump––Cu direct interconnections fabricated by means of surface activated bonding method

As a room temperature bonding method, surface activated bonding (SAB) method has been introduced to be one of the most appropriate interconnection methods for the next generation of electronic packaging. Thus it is important to study the reliability of SAB interconnection in long term life test.In this paper, interconnections of Au bump and Cu film bonded by SAB method were performed in high temperature thermal aging test. Degradation of properties such as electrical resistance, shear strength of bump and interface microstructure during aging process were studied to investigate the failure mechanism of the interconnection. Intermetallic compound Cu₃Au was found formed at the interface during thermal aging, and it causes evolvement of the properties and failure mode of the interconnection changing in shear test. Results reveal that SAB is suitable for the interconnection between Au bump and Cu film and it is reliable in thermal reliability test.     

表面活性化常温结合过程中表面微观形貌变化的AFM研究

用表面活化方法实现了Ａｌ和Ｓａｐｐｈｉｒｅ之间常温直接结合，用原子力显微镜研究了电解腐蚀，高速原子束轰击和压接等过程中样品表面微观形貌及微粗糙度的变化，提示了压接前样品表面微观粗糙度对接合强度的影响，为优化表面活性常温结合过程控制，提高了ＳＡＢ接合强度提供了的实验依据。     

Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method

In this paper, we demonstrate the feasibility of ultrahigh-density bumpless interconnect by realizing the ultrafine pitch bonding of Cu electrodes at room temperature. The bumpless interconnect is a novel concept of bonding technology that enables a narrow bonding pitch of less than 10 /spl mu/m by overcoming the thermal strain problem. In the bumpless structure, two thin layers including an insulator and metallic interconnections on the same surface are bonded at room temperature by the surface-activated bonding (SAB) method. In order to realize the bumpless interconnect, we invented a SAB flip-chip bonder that enabled the alignment accuracy of /spl plusmn/1 /spl mu/m in the high vacuum condition. Moreover, the fabrication process of ultrafine Cu electrodes was developed by using the damascene process and reactive ion beam etching (RIE) process, and the bumpless electrodes of 3 /spl mu/m in diameter, 10 /spl mu/m in pitch, and 60 nm in height were formed. As a result, we succeeded in the interconnection of 100 000 bumpless electrodes with the interfacial resistance of less than 1 m/spl Omega/. An increase of the resistance was considerably small after thermal aging at 150/spl deg/C for 1000 h.     

Low temperature bonded Cu/LCP materials for FPCs and their characteristics

A new cladding process has been developed using the surface activated bonding (SAB) method. In this process, the surfaces of materials to be bonded are cleaned, activated by Ar ion sputter etching, and immediately rolled together with low distortion at room temperature in a vacuum chamber . This process is applicable not only to cladding metals but also to laminating polymer film on metal without adhesives. We focused on laminating liquid crystal polymer (LCP) on copper (Cu) foil using the SAB method , which is different from other conventional methods . We also investigated the chemical state at the interface between the Cu foil and LCP film before and after heat treatment (up to 300/spl deg/C), by comparing with that on raw LCP film. All laminated materials were etched and cropped out, and the LCP surfaces were analyzed with X-ray photoelectron spectrometer (XPS). After the heat treatment, the ratio of C=O increased with increasing heat treatment temperature. It indicated that, under the high temperature of the heat treatment, the oxidation occurs not only at the Cu foil/sputtered Cu but also the LCP surfaces. We reported previously that the peel strength of laminated material made by the SAB method was improved by using Cu sputtering on the LCP film , . But after a heat-resistance test, the peel strength significantly decreased. This decrease resulted from the oxidation around the interface between the Cu foil/sputtered Cu and the LCP film due to gas permeation through the LCP film, and the softening of the Cu foil by its recrystallization due to high temperature. To prevent this loss of peel strength, we used Cu-0.02%Zr alloy foil with a higher recrystallization temperature and sputter Cu-Ni alloy or Ni-Cr alloy on the LCP film instead of Cu. It is also shown that the Cu/LCP materials produced by the SAB method have excellent electrical properties and etching ability.     

画中画控制器SAB9077H及其应用

详细介绍了ＰＨＩＬＩＰＳ公司新近推出的画中画芯片ＳＡＢ９０７７Ｈ的结构、特点、功能和使用方法;随后给出了在１ＦＨ模式下的典型应用及在监控、保安系统、可视电话或电视会议中的应用实例。     

晶圆键合技术在LED应用中的研究进展

简要介绍了晶圆键合技术在发光二极管(LED)应用中的研究背景,分别论述了常用的黏合剂键合技术、金属键合技术和直接键合技术在高亮度垂直LED制备中的研究现状,包括它们的材料组成和作用、工艺步骤和参数以及优缺点.其中,黏合剂键合是一种低温键合技术,且易于应用、成本低、引入应力小,但可靠性较差;金属键合技术能提供高热导、高电导的稳定键合界面,与后续工艺兼容性好,但键合温度高,引入应力大,易造成晶圆损伤;表面活化直接键合技术能实现室温键合,降低由于不同材料间热失配带来的负面影响,但键合良率有待提高.     

Bumpless Interconnect of 6- $mu$m-Pitch Cu Electrodes at Room Temperature

Bumpless interconnect of 6-$mu{rm m}$-pitch Cu electrodes was realized at room temperature with the surface activated bonding (SAB) method. In this study, we propose a novel bumpless structure, where the electrodes and a surrounding Cu frame are fabricated with the same height to increase bond strength and demonstrate the feasibility of a sealing interconnection between Cu surfaces. The damascene process, assisted by the reactive ion beam etching (RIE), was used to fabricate the Cu structures. 923$thinspace$521 electrodes placed inside the frame were arranged into a spiral chain to enable the detection of the positions with insufficient interconnection by electrical resistance measurements. Using the SAB conditions optimized with simple chemo-mechanical polishing (CMP)-Cu film samples, we found that 744$thinspace$769 electrodes were successfully interconnected, except some specific lines near the frame, which might be due to sample preparation error rather than a bond defect. The mean contact resistance was below 0.08 $Omega$; a sealing effect was achieved at the frame structure because there was little increase in the contact resistance in high temperature storage testing performed at 150 $^{circ}{rm C}$ for 1000 h, in ambient air.      

耐高温丙烯酸酯压敏胶带在柔性电路板中的应用

双面压敏胶带在柔性电路板组装行业有着广泛和大量的应用.综述了柔性电路板行业对压敏胶带的常规性能要求,从被粘材质和胶带种类以及测试要求等方面逐一说明,提供了使用指南.此外,还特别介绍了耐高温丙烯酸酯压敏胶带在柔性电路板行业的应用和性能表现,适合于需要在柔性电路板回流焊工艺前进行表面粘贴的应用,也可用于其他有耐高温性能要求的粘接应用.     

Gate Grounded NMOS器件的ESD性能分析

文章基于0.18μm CMOS工艺制程的1.8V NMOS器件,从工艺的角度并用TLP测试系统对栅极接地的NMOS(GGNMOS)ESD器件进行比较分析.介绍了SAB和ESD注入对GGNMOS的性能影响,影响GGNMOS ESD性能的瓶颈是均匀开启性.在GGNMOS版图等其他特征参数最优的前提下,采用SAB能改善其均匀...     

A Novel Bonding Method for Ionic Wafers

A novel method for bonding sapphire, quartz, and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and simultaneously coated with nano-adhesion Fe layers using a low energy argon ion beam. The optical images show that the entire area of the 4-in wafers of LiNbO₃/Si was bonded. Such images for other samples show particle induced voids across the interface. The average tensile strength for all of the mating pairs was much higher than 10 MPa. Prolonged irradiation reduced polarization in sapphire, quartz, and Al-silicate glasses. Fe and Ar ion-induced charge deposition result in the formation of an electric field, which was responsible for the depolarization. The lattice mismatch induced local strain was found in LiNbO₃/Si. No such strain was observed in the Al-silicate glass/Si interface probably because of annealing at 300 for 8 h. The Al-silicate glass/Si interface showed an interfacial layer of 2 nm thick. A 5-nm-thick amorphous layer was observed with the other layer across the /Si interface. The EELS spectra confirmed the presence of nano-adhesion Fe layers across the interface. These Fe layers associated with the electric field induced by ion beam irradiation for prolonged period of time, particularly in LiNbO₃/Si, might be responsible for the high bonding strength between Si/ionic wafers at low temperatures.