射频溅射沉积TaOx薄膜离子导体性能

利用射频反应溅射沉积方法在不同氧含量下以ＷＯ３／ＩＴＯ／Ｇｌａｓｓ为基体，制备了一系列厚度大于２００ｎｍ的ＴａＯｘ薄膜，并用Ａｒｎｏｌｄｕｓｓｅｎ方法检测离子导电性能。结果表明，当溅射功率为１５０Ｗ、氧含量１０～８０％条件下制备的ＴａＯｘ薄膜均为离子导体。其中氧含量２０—４０％时离子导电性能最佳。用ＴａＯｘ薄膜作为离子导体制备的Ａｌ／ＮｉＯｘ／ＴａＯｘ／ＷＯｘ／ＩＴＯ／Ｇｌａｓｓ电致变色器件，其着色态在可见光谱范围（０．３８—０．７８μｍ）的平均反射比为１１．２％，漂白态时对应的平均反射比可达８３．２％。本文还讨论了ＴａＯｘ离子导体的离子导电机理。     

电沉积法制备电致变色材料

应用电沉积法制备WO3、NiO、M0O3,WO3/M0O3等电致变色薄膜。WO3薄膜、NiO薄膜、M0O3薄膜具有较好的电致变色特性,漂白态和着色态的透射率之差平均为30％左右。WO3/M0O3掺杂薄膜漂白态和着色态的透射率之差平均为40％左右,显示掺杂有利于增强薄膜的电致变色特性。WO3 NiO互补型电致变色体系漂白态和着色态的透射率之差平均为40％左右,显示互补型电致变色材料有利于增强电致变色特性。在双注入模型的基础上,根据过渡金属配合物显色机理,提出解释电致变色机理的“配位场模型”,认为在电致变色中可能存在三种电子跃迁方式。     

磁控溅射电致变色非晶态氧化钨薄膜

利用平面磁控反应溅射在具有透明导电膜的玻璃基片上沉积氧化钨膜层。Ｘ射线衍射分析结果表明，基片在室温状态下得到的膜呈非晶态。以０．２Ｎ浓度的ＨＣｌ为电解液，用电化学方法研究了Ｈ＋注入及抽出后氧化钨膜光学性能的变化及这种变化与膜的制备参数之间的关系。获得了沉积氧化钨膜近于最佳的工艺条件。在纯氧气氛下，溅射功率密度１．２Ｗ／ｃｍ２，溅射气体压强１．３Ｐａ时，制备的非晶态氧化钨膜，在５０次电化学循环后，漂白态与着色态的可见光透射率之差约为０．５７，其电化学循环的变色寿命也长。光电子能谱（ＸＰＳ）分析表明，Ｈ＋注入后着色态膜内出现了Ｗ５＋、Ｗ４＋。对电致变色机理也作了讨论。     

电致变色氧化钨薄膜的干法锂化研究

采用电子束加热蒸发金属Ｌｉ对ＷＯ３电致变色薄膜进行干法锂化，利用Ｘ光电子能谱和电化学方法分析不同锂化程度ＷＯ３薄膜的化学组分和电致变色性能。实验表明，当锂化ＷＯ３薄膜中Ｌｉ原子与Ｗ原子的数目比在０．１５左右时有良好的可逆性和着色效率。利用该方法制备了性能良好的单片式导Ｌｉ＋全固态电致变色薄膜器件Ｇｌａｓｓ／ＩＴＯ／ＷＯ３·Ｌｉ／ＬｉＦ·ＡｌＦ３／Ｖ２Ｏ５／Ａｌ。     

基于氧化钨和普鲁士蓝的可变色超级电容器

氧化钨(WO3)薄膜作为阴极电致变色材料,还原态(阳离子嵌入)时着色而氧化态(阳离子脱出)时褪色;而普鲁士蓝(Prussian blue,PB)薄膜作为阳极电致变色材料,还原态(阳离子嵌入)时褪色而氧化态(阳离子脱出)时着色.利用不同离子存储状态下WO3和PB薄膜的变色互补性,构筑了基于WO3和PB薄膜的可变色超级电容器.利用脉冲激光沉积法和电沉积法在透明导电玻璃表面制备了 WO3/PB复合薄膜,并以该复合薄膜为电极,构筑了对称型可变色超级电容器.结果表明,WO3/PB复合薄膜具有优异的循环稳定性,循环200圈后,面电容量的保持率可达83.8％;在650 nm时,由于WO3和PB薄膜在不同电压下的协同变色,超级电容器的光透过率差在完全着色与褪色时为53.2％.该超级电容器在不同充、放电状态下可清晰地显示不同的颜色组合及光对比度,从而实现利用颜色变化指示超级电容器的能量存储状态.本研究有助于推动电致变色和能量存储领域的交叉融合,为超级电容器能量存储状态的可视化提供实验依据.     

不同膜厚WO3薄膜的电致变色特性研究

研究了膜厚对WO3薄膜的电致变色特性的影响。WO3电致变色薄膜采用真空电子束蒸发技术制备，采用光学膜厚极值法和石英晶体振荡法膜厚测量技术监控WO3薄膜的膜厚及其光学特性。对不同光学膜厚的WO3薄膜的初始态、着色态和退色态的光谱特性进行了对比，同时研究了透射比和电流的时间响应特性。     

NiO_xH_y 能效窗口薄膜的电致变色性

介绍了用于能效窗口的直流溅射氢氧化镍电致变色薄膜的电变色性能。讨论了不同偏置条件下的光透过谱线和循环伏安特性，薄膜厚度与光密度的变化关系，以及不同厚度的电致变色薄腊与太阳光透过率的关系。同时对电色薄膜的时间响应特性、光密度变化与注入的电荷密度的联系也进行了研究。结果表明，直接采用氢氧化镍作为制备电致变色薄膜的靶材，获得的薄膜有良好的电致变色性能，薄膜不需激活就有良好的初始电色特性。初步讨论了镍电致变色的机理，用能带理论可以定性说明镍电致变色薄膜的消着色机理。     

电致变色灵巧窗的设计与研制

从电致变色器件的工作原理出发，对电致变色灵巧窗的基本结构和各层材料的作用进行分析和讨论，对组成灵巧窗的各层薄膜材料进行研究和制备，并研制了性能优良的ＩＴＯ／ＷＯ３／ＬｉＣｌＯ４－ＰＣ／ＮｉＯ／ＩＴＯ以及ＩＴＯ／ＮｉＯ／ＬｉＣｌＯ４－ＰＣ／ＩＴＯ结构的半固态灵巧窗和ＩＴＯ／ＷＯ３／ＬｉＮｂＯ３／ＮｉＯ／ＩＴＯ结构的全固态灵巧窗。     

五氧化二钒薄膜结构与电致变色效应

采用反应蒸发制备Ｖ２Ｏ５薄膜,用Ｘ射线衍射分析和分光光度计分别测量薄膜晶体结构和光谱特性,利用标准三电极法从锂离子电解质溶液中向Ｖ２Ｏ５薄膜注入锂离子,实验结果表明：刚制备的薄膜为非晶结构,热处理使得膜结晶：Ｖ２Ｏ５薄膜呈较强的阳极电致变色和较弱的阴极电致变色双理效应;     

射频溅射沉积TaOx薄膜离子导体性能

利用射频反应溅射沉积方法在不同氧含量下以WO3/ITO/Glass为基体,制备了一系列厚度大于200nm的TaOx薄膜,并用Arnoldussen方法检测离子导电性能.结果表明,当溅射功率为150W、氧含量10～80%条件下制备的TaOx薄膜均为离子导体.其中氧含量20-40%时离子导电性能最佳.用TaOx薄膜作为离子导体制备的Al/Niox/TaOx/Wox/ITO/Glass电致变色器件,其着色态在可见光谱范围(0.38-0.78μm)的平均反射比为11.2%,漂白态时对应的平均反射比可达83.2%.本文还讨论了TaOx离子导体的离子导电机理.     

Gasochromic windows

Gasochromic windows can change their transmittance over a wide range. This change is caused by a thin layer of tungsten oxide (WO₃), covered by a very thin layer of platinum. Exposing this coating to diluted hydrogen gas leads to reduction of the WO₃, resulting in colouring. This process can be reversed by introducing diluted oxygen.The hydrogen and oxygen are produced by an electrolyser. Only small amounts of gas are needed for the switching process. The coatings are produced by sputtering. Water is needed in the WO₃ films to allow rapid transport of the hydrogen. However, this water should not escape when the system is operated at higher temperatures, which can exceed 60°C. By adjusting the conditions of the sputtering process appropriately, a large amount of water can be incorporated in the films, which remains even up to temperatures above 100°C.The best transmittance values obtained for a coated double-glazed unit with a moderate film thickness (560 nm) and hydrogen concentrations below the combustion limit are 76% and 77% for solar and visual transmittance, respectively, in the bleached state and 5% and 6% for solar and visual transmittance, respectively, in the coloured state. Darker states can be obtained by applying thicker films of tungsten oxide without reducing the transmittance in the bleached state.Gasochromic coatings can also be deposited easily on plastic substrates and—because their coating structure is so simple—combined with prismatic microstructures, which allow light to be redirected. In addition, the gasochromic systems technology can be used with metal hydride systems.     

Hydrogen absorption and optical properties of Pd/Mg thin films prepared by DC magnetron sputtering

Hydrogen storage in metallic thin films in the form of metal hydride have a great potential to solve the hydrogen storage challenges and also thin films offer an opportunity to grow new samples fast with novel structures. In the present work the ex situ study on structural, optical and hydrogen storage properties of Pd-capped Mg thin films have been investigated. The nano structured Pd-capped Mg thin films have been prepared by DC magnetron sputtering on glass substrate. The as deposited and hydrogenated samples have been characterized by XRD and FESEM. The content of hydrogen in thin films has measured by using Elastic Recoil Detection Analysis (ERDA) technique with 120 MeV₁₀₇ Ag⁺⁹ ions. The temperature dependent hydrogen contents in thin film samples have been estimated and the saturation of hydrogen absorption has been observed at 250 °C among all studied samples. In the optical reflectance spectra, Mg hydride samples have been observed partially transparent in comparison to as deposited Mg film.     

Characteristics of indium zinc oxide thin films prepared by direct current magnetron sputtering for flexible solar cells

The In₂O₃-ZnO (IZO) thin films were prepared on polyethylene terephthalate substrate at room temperature by direct current (dc) magnetron sputtering. The properties of IZO thin films were studied in terms of O₂ concentration and deposition parameters. As the O₂ concentration in O₂/Ar gas increased, the transmittances of the films were increased up to 90% and the resistivities were decreased. The systematic variation of process parameters including dc power, gas pressure and target-to-substrate distance was performed to examine the properties of the deposited films. It was disclosed that there was an optimum O₂ concentration for high transmittance and low resistivity. With decrease in dc power and gas pressure and increase in target-to-substrate distance, the IZO films with high transmittance and low resistivity were obtained. The observation of the IZO films by atomic force microscopy indicated that the microstructure and surface morphology of the films were responsible for the transmittance. It was demonstrated that IZO films with a resistivity of 5.1×10⁻⁴ Ω cm and an optical transmission of 90% in the visible spectrum could be prepared at room temperature on flexible substrates.     

Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5×10⁻⁴ Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.     

Electrical and optical properties of Al doped cadmium oxide thin films deposited by radio frequency magnetron sputtering

Cadmium oxide thin films with different percentages of aluminum doping have been synthesized via radio frequency magnetron sputtering technique. Thin films were deposited on glass and silicon substrates with different percentages of aluminum at a substrate temperature of 573 K and pressure of 0.1 mbar in Ar+O₂ atmosphere. The deposited films were characterized by studying their structural, electrical and optical properties. The X-ray diffraction pattern revealed good crystallinity with preferred (1 1 1) orientation in the films. Aluminum doping in CdO thin films were confirmed by X-ray photoelectron spectroscopic studies and actual doping percentages were also measured from it. The optical band gap was found to decrease first and then increase with increasing percentages of aluminum concentrations. The electrical conductivity was found to increase with increase of aluminum doping concentration up to 5% but for higher doping concentration (>5%) the conductivity was found to decrease.     

Zirconium nitride based transparent heat mirror coatings —preparation and characterisation

Transparent heat mirror coatings based on thin zirconium nitride films have been prepared using reactive magnetron sputtering. The zirconium nitride films have been sandwiched between layers of zirconium oxide. It is shown that the multilayer configuration ZrO₂/ZrN/ZrO₂ can be used as solar control coatings on window glazings. A visible transmittance of around 60% and a thermal emittance lower than 0.2 can be obtained, and the ratio between visible transmittance and total solar transmittance can be as high as 1.7. The influence of substrate temperature on the optical quality of the films is evaluated and it is shown that the crystal structure of the first oxide layer is of importance for the optical quality of the nitride. The influence of preparation conditions and accelerated ageing has been modelled using the optical constants of thin films prepared under identical conditions as the films in the multilayer coatings.     

低真空射频反应溅射Ta2O5减反射薄膜及其光伏应用

在低真空下，用射频反应溅射法在硅片和硅太阳电池上制备理想配比的非晶Ｔａ２Ｏ５减反射薄膜。测定表明，其减反射性能良好。     

Electrochromic properties of porous NiO thin films prepared by a chemical bath deposition

Highly porous nickel oxide thin films were prepared on ITO glass by a simple chemical bath deposition (CBD) method in combination with a following heat-treatment process. XRD analysis revealed that the as-deposited precursor film contained β-Ni(OH)₂ and γ-NiOOH, and they changed to cubic polycrystalline NiO after annealing. The FTIR results showed presence of free hydroxyl ion and water in the NiO thin films. The electrochromic properties of NiO thin films were investigated in an aqueous alkaline electrolyte (1 M KOH) by means of transmittance, cyclic voltammetry (CV) and chronoamperometry (CA) measurements. The NiO thin film annealed at 300 °C exhibited a noticeable electrochromism and good memory effect. The coloration efficiency was calculated to be 42 cm² C⁻¹ at 550 nm, with a variation of transmittance up to 82%. The porous NiO thin films also showed good reaction kinetics with fast switching speed, and the coloration and bleaching time were 8 and 10 s, respectively.     

退火气氛对Al-F共掺杂ZnO薄膜结构和光电性能的影响

用射频磁控溅射法制备了Al-F共掺杂ZnO（ZnO（Al,F））透明导电薄膜,研究了不同退火气氛对ZnO（Al,F）薄膜的结构、电学和光学特性的影响。结果表明:在真空和还原性气氛中退火后的薄膜透光率呈现"蓝移"趋势,在空气中退火处理后的薄膜透光率则表现为"红移";在真空中,400℃×60min的退火处理,使ZnO（Al,F）薄膜的电阻率降低至1.41×10^-3Ω·cm,透光率则上升到93%以上,有效提高了薄膜的光电特性;所有退火气氛下,薄膜均具有（002）单一择优取向的多晶六方纤锌矿结构;薄膜的晶粒尺寸为25～30nm。