A novel TFT‐OLED integration for OLED‐independent pixel programming in amorphous‐Si AMOLED pixels

Abstract— The direct voltage programming of active‐matrix organic light‐emitting‐diode (AMOLED) pixels with n‐channel amorphous‐Si (a‐Si) TFTs requires a contact between the driving TFT and the OLED cathode. Current processing constraints only permit connecting the driving TFT to the OLED anode. Here, a new “inverted” integration technique which makes the direct programming possible by connecting the driver n‐channel a‐Si TFT to the OLED cathode is demonstrated. As a result, the pixel drive current increases by an order of magnitude for the same data voltages and the pixel data voltage for turn‐on drops by several volts. In addition, the pixel drive current becomes independent of the OLED characteristics so that OLED aging does not affect the pixel current. Furthermore, the new integration technique is modified to allow substrate rotation during OLED evaporation to improve the pixel yield and uniformity. The new integration technique is important for realizing active‐matrix OLED displays with a‐Si technology and conventional bottom‐anode OLEDs.     

Reducing image sticking in AMOLED displays with time‐ratio gray scale by analog calibration

Abstract— Early loss of image uniformity has been a critical drawback of active‐matrix organic light‐emitting‐diode (AMOLED) displays operated in time‐ratio gray‐scale mode. This problem is addressed with an analog calibration technique which measures the voltage across each OLED for a given current and subsequently controls the supply voltage of pixels and the voltage drop across the driving th in‐film transistor (TFT) of each OLED. The uniformity of test cells, which were aged to produce image sticking in a chessboard pattern, were improved. A measure of image sticking, called the extracted image‐sticking value (EISV), was formulated, which is developed and used for the quantitative evaluation of the calibration method. OLED voltages over a range of about 0.35 V were compensated to produce more uniform OLED currents than those before aging. The variation of luminance associated with image sticking was reduced by about 40% for a full‐white image after between 2 and 10 hours of accelerated aging with a constant voltage of 8 V across an OLED.     

Vt Compensated voltage‐data a‐Si TFT AMOLED pixel circuits

Abstract— Active‐matrix organic light‐emitting‐diode (AMOLED) displays are now entering the marketplace. The use of a thin‐film‐transistor (TFT) active matrix allows OLED displays to be larger in size, higher in resolutions and lower in power dissipation than is possible using a conventional passive matrix. A number of TFT active‐matrix pixel circuits have been developed for luminance control, while correcting for initial and electrically stressed TFT parameter variations. Previous circuits and driving methods are reviewed. A new driving method is presented in which the threshold‐voltage (V_t) compensation performance, along with various circuit improvements for amorphous‐silicon (a‐Si) TFT pixel circuits using voltage data, are discussed. This new driving method along with various circuit improvements is demonstrated in a state‐of‐the‐art 20‐in. a‐Si TFT AMOLED HDTV.     

Development of 8‐in. oxide‐TFT‐driven flexible AMOLED display using high‐performance red phosphorescent OLED

An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiO_x layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.     

Anode‐voltage‐control circuit for compensation of luminance deterioration

Abstract— An external driving circuit that has realized long lifetime, power‐consumption control, and peak luminance for organic light‐emitting diode (OLED) displays have been developed. This circuit realizes an effective method for constant‐anode‐voltage (CV) driving refered to as clamped inverter (CI) driving. The feature of CV driving is to achieve low‐power consumption compared with constant‐anode‐current (CC) driving and to control the power consumption and peak luminance according to the image because display luminance can be easily changed by controlling the anode voltage. On the other hand, CV driving has the problem that luminance deterioration appears to be serious compared with that of CC driving because the current of the OLED element decreases according to usage time. To cope with this, a lifetime compensation circuit that has increased the anode voltage so that it compensates for the luminance deterioration has been developed. This circuit can compensate not only the decrease in current but also the decrease in luminance at a constant current that CC driving cannot. However, increasing the anode voltage causes an increase in stress on the OLED element. The influence of stress on OLED lifetime was verified. As a result, it was confirmed that this circuit can extend the lifetime by 32% even if the anode voltage is increased, causing stress on the OLED structure.     

An averaging pixel structure using microcrystalline‐silicon films prepared at high temperature for AMOLED displays

Abstract— A new voltage‐addressed pixel using a multiple drive distribution has been developed to improve, in a simple way, the brightness uniformity of active‐matrix organic light‐emitting‐diode (AMOLED) displays. Moreover, circuits were realized using microcrystalline‐silicon (μc‐Si) films prepared at 600°C using a standard low‐pressure CVD system. The developed p‐channel TFTs exhibit a field‐effect mobility close to 6 cm²/V‐sec. The experimental results show that the proposed spatial distribution of driving TFTs improves the uniformity of current levels, in contrast to the conventional two‐TFT pixel structure. Backplane performances have been compared using circuits based on μc‐Si and furnace‐annealed polysilicon materials. Finally, this technology has been used to make an AMOLED demonstration unit using a top‐emission OLED structure. Thus, by combining both an μc‐Si active‐layer and a current‐averaging driver, an unsophisticated solution is provided to solve the inter‐pixel non‐uniformity issue.     

Novel analog feedback current programming architecture compatible with 2‐transistor 1‐capacitor pixel for active matrix organic light‐emitting diode displays

A new feedback current programming architecture is described, which is compatible with active matrix organic light‐emitting diode (AMOLED) displays having the 2T1C pixel structure. The new pixel programming approach is compatible with all TFT technologies and can compensate for non‐uniformities in both threshold voltage and carrier mobility of the pixel OLED drive TFT. Based on circuit simulations, a pixel drive current of less than 10 nA can be programmed in less than 50 µ. This new approach can be implemented within an AMOLED external or integrated display data driver.     

Letter: Novel approaches to realize high‐resolution AMOLED display

Two different approaches to realize high‐resolution active‐matrix organic light‐emitting device (AMOLED) display were delivered. By adopting specific organic light emitting diode (OLED) structure with pre‐pattern electrode and the utilization of color filter, we successfully simplify the fabrication process with fine metal mask (FMM)‐free or one‐FMM solutions. Each approach was demonstrated with a 4.4″ panel with 413 ppi pixel density based on real stripe RGB. Both panels possessed low power consumption, low reflectivity, and superior NTSC performance. Because the utilization of FMM was avoided or reduced, higher production yield, higher throughput, and lower cost could be achieved. Therefore, these two approaches are very promising for mass production of high‐resolution AMOLED display.     

High‐speed pixel circuits for large‐sized 3‐D AMOLED displays

Abstract— Large‐sized active‐matrix organic light‐emitting diode (AMOLED) displays require high‐frame‐rate driving technology to achieve high‐quality 3‐D images. However, higher‐frame‐rate driving decreases the time available for compensating Vth in the pixel circuit. Therefore, a new method needs to be developed to compensate the pixel circuit in a shorter time interval. In this work, image quality of a 14‐in. quarter full‐high‐definition (qFHD) AMOLED driven at a frame rate of over 240 Hz was investigated. It was found that image degradation is related to the time available for compensation of the driving TFT threshold voltage. To solve this problem, novel AMOLED pixel circuits for high‐speed operation are proposed to compensate threshold‐voltage variation at frame rates above 240 Hz. When Vth is varied over ±1.0 V, conventional pixel circuits showed current deviations of 22.8 and 39.8% at 240 and 480 Hz, respectively, while the new pixel circuits showed deviations of only 2.6 and 5.4%.     

Investigation of the hysteresis phenomenon of an a‐Si:H TFT at an elevated temperature for AMOLED displays

Abstract— The temperature dependence of the hysteresis of an a‐Si:H TFT has been investigated. An a‐Si:H TFT pixel driving scheme has been proposed and investigated. This scheme can eliminate changes in the organic light‐emitting diode (OLED) current caused by hysteresis of an a‐Si:H TFT. The VTH of the a‐Si:H TFT was changed according to the gate‐voltage sweep direction because of the hysteresis of the a‐Si:H TFT. The variation of VTH for a a‐Si:H TFT decreased from 0.41 to 0.17 V at an elevated temperature of 60°C because the sub‐threshold slope (s‐slope) of the a‐Si:H TFT, in the reverse voltage sweep direction, increased more than in the forward voltage sweep direction due to a greater increase in the initial electron trapped charges than the hole charges. Although the OLED current variation caused by hysteresis decreased (～14%) as the temperature increased, the error in the OLED current needed to be improved in order to drive the pixel circuit of AMOLED displays. The proposed pixel circuit can apply the reset voltage (?10 V) before the data voltage for the present frame that was written to fix the sweep direction of the data voltage. The variation in the OLED current caused by hysteresis of the a‐Si:H TFT was eliminated by the fixed voltage sweep direction in the proposed pixel circuit regardless of operating temperature.     

An active‐matrix organic light‐emitting‐diode pixel circuit for the compensation of I × R voltage drop in power line

Abstract— A new voltage‐driving active‐matrix organic light‐emitting diode (AMOLED) pixel circuit is proposed to improve the display image‐quality of AMOLED displays. Because OLEDs are current‐driven devices, the I × R voltage drop in the power lines is evitable. Accordingly, the I × R voltage‐drop compensation scheme should be included in the pixel‐driving method when a voltage‐compensation method is used. The proposed pixel was designed for the compensation of an I × R voltage drop in the power lines as well as for the compensation of the threshold‐voltage non‐uniformity of low‐temperature polycrystalline‐silicon thin‐film transistors (LTPS TFTs). In order to verify the compensation ability of the proposed pixel, SPICE simulation was performed and compared with those of other conventional pixels. When the Vss voltage varies from 0 to 1 V, the drain current of the proposed pixel decreased by under 1% while that of conventional Vth compensation methods without Vss compensation decreased by over 60%. 2.2‐in. QCIF⁺ full‐color AMOLED displays, which employ the proposed pixel, have been also developed. It was verified by comparison of the display image quality with a conventional panel that our proposed panel successfully overcame the voltage‐drop problems in the power lines.     

A pixel structure for simultaneous programming and emission method for shutter‐glasses‐type stereoscopic 3‐D AMOLED displays

Abstract— A pixel structure for shutter‐glasses‐type stereoscopic 3‐D active‐matrix organic light‐emitting‐diode (AMOLED) displays is proposed. The proposed pixel programs data to the pixel during the light‐emission time of an OLED. Because the emission time of the proposed pixel is extended, it is expected that the proposed pixel not only decreases the peak current of the OLED during the emission period but also reduces flicker. Moreover, the aperture ratio of the proposed pixel is 58.69% for a 50‐in. full‐high‐definition (FHD) condition by minimizing the number of thin‐film transistors (TFTs), capacitors, and control signal lines as seven TFTs, two capacitors, two power lines, and four control lines per unit pixel. Simulation results show that the error in the emission current of the proposed pixel is from ?0.82% to +0.90% when the threshold‐voltage variation of the driving TFT is ±1.00 V, and the maximum variation of the emission current is ?1.35% when a voltage drop in the power line is ?0.50 V on a full‐white‐image display.     

A LTPS-TFT pixel circuit for active matrix organic light emitting diode based on improved current mirror

In this paper, a voltage-driving and current compensation method for active matrix organic light emitting diode (AMOLED) displays is proposed. An improved current mirror is introduced into the pixel circuit to overcome the channel length modulation effect of TFTs. The SPICE simulation results show that the proposed pixel circuit not only effectively compensates for non-idealities related with deviations of μ and V_T in TFTs, the OLED degradation, but also offers a less setting time and guarantees a good liner relationship between V_DATA and I_OLED.     

High‐efficiency OLED microdisplay with microlens array

A high‐efficiency organic light‐emitting diode (OLED) microdisplay has been developed with some new technologies including microlens array. We focused on the improvement of the out‐coupling efficiency and achieved three times higher efficiency as compared with conventional OLED. By using our developed technologies, it is possible to improve the maximum luminance from 1600 to 5000 cd/m² while maintaining same lifetime.     

Active‐matrix organic light‐emitting diode displays with indium gallium zinc oxide thin‐film transistors and normal,inverted, and transparent organic light‐emitting diodes

Abstract— Active‐matrix organic light‐emitting diode (AMOLED) displays have gained wide attention and are expected to dominate the flat‐panel‐display industry in the near future. However, organic light‐emitting devices have stringent demands on the driving transistors due to their current‐driving characteristics. In recent years, the oxide‐semiconductor‐based thin‐film transistors (oxide TFTs) have also been widely investigated due to their various benefits. In this paper, the development and performance of oxide TFTs will be discussed. Specifically, effects of back‐channel interface conditions on these devices will be investigated. The performance and bias stress stability of the oxide TFTs were improved by inserting a SiO^x protection layer and an N²O plasma treatment on the back‐channel interface. On the other hand, considering the n‐type nature of oxide TFTs, 2.4‐in. AMOLED displays with oxide TFTs and both normal and inverted OLEDs were developed and their reliability was studied. Results of the checkerboard stimuli tests show that the inverted OLEDs indeed have some advantages due to their suitable driving schemes. In addition, a novel 2.4‐in. transparent AMOLED display with a high transparency of 45% and high resolution of 166 ppi was also demonstrated using all the transparent or semi‐transparent materials, based on oxide‐TFT technologies.     

System design for a wide‐color‐gamut TV‐sized AMOLED display

Abstract— By using current technology, it is possible to design and fabricate performance‐competitive TV‐sized AMOLED displays. In this paper, the system design considerations are described that lead to the selection of the device architecture (including a stacked white OLED‐emitting unit), the backplane technology [an amorphous Si (a‐Si) backplane with compensation for TFT degradation], and module design (for long life and low cost). The resulting AMOLED displays will meet performance and lifetime requirements, and will be manufacturing cost‐competitive for TV applications. A high‐performance 14‐in. AMOLED display was fabricated by using an in‐line OLED deposition machine to demonstrate some of these approaches. The chosen OLED technologies are scalable to larger glass substrate sizes compatible with existing a‐Si backplane fabs.     

Amorphous‐oxide TFT backplane for large‐sized AMOLED TVs

Abstract— Amorphous‐oxide thin‐film‐transistor (TFT) arrays have been developed as TFT backplanes for large‐sized active‐matrix organic light‐emitting‐diode (AMOLED) displays. An amorphous‐IGZO (indium gallium zinc oxide) bottom‐gate TFT with an etch‐stop layer (ESL) delivered excel lent electrical performance with a field‐effect mobility of 21 cm²/V‐sec, an on/off ratio of >10⁸, and a subthreshold slope (SS) of 0.29 V/dec. Also, a new pixel circuit for AMOLED displays based on amorphous‐oxide semiconductor TFTs is proposed. The circuit consists of four switching TFTs and one driving TFT. The circuit simulation results showed that the new pixel circuit has better performance than conventional threshold‐voltage (VTH) compensation pixel circuits, especially in the negative state. A full‐color 19‐in. AMOLED display with the new pixel circuit was fabricated, and the pixel circuit operation was verified in a 19‐in. AMOLED display. The AMOLED display with a‐IGZO TFT array is promising for large‐sized TV because a‐IGZO TFTs can provide a large‐sized backplane with excellent uniformity and device reliability.     

Repeatedly foldable AMOLED display

In this study, a 5.9‐inch foldable active‐matrix organic light emitting diode (AMOLED) display was developed. A folding test was performed repeatedly. The display survived the folding test (100,000 folds) with a curvature radius of 2 mm. To protect an organic light emitting diode (OLED) against moisture, inorganic passivation layers are provided on the upper and lower sides of the flexible display. Using our transfer technology, high density passivation layers can be obtained. The measured water vapor transmission rate of the layer is 7 × 10^?6 g/m²?day or less, which improves OLED reliability. With these techniques, we have developed a book‐type display, which is repeatedly foldable like a book, and a tri‐fold display including a display area, which is foldable in three.     

Flexible high‐resolution full‐color top‐emitting active‐matrix organic light‐emitting diode display

We developed a high‐performance 3.4‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display with remarkably high resolution using an oxide semiconductor in a backplane, by applying our transfer technology that utilizes metal separation layers. Using this panel, we also fabricated a prototype of a side‐roll display for mobile uses. In these AMOLED displays, a white OLED combined with a color filter was used in order to achieve remarkably high resolution. For the white OLED, a tandem structure in which a phosphorescent emission unit and a fluorescent emission unit are serially connected with an intermediate layer sandwiched between the emission units was employed. Furthermore, revolutionary technologies that enable a reduction in power consumption in both the phosphorescent and fluorescent emission units were introduced to the white tandem OLED.     

Development of 55‐in. 8K AMOLED TV based on coplanar oxide thin‐film transistors and inkjet printing process

In this paper, we presented 55‐in. 8K4K AMOLED TV employing coplanar oxide thin‐film transistor (TFT) backplane, top emissive inkjet‐printing organic light‐emitting diode (OLED) device, gate driver on array (GOA), and compensation technologies. It is so far the largest prototype AMOLED TV fabricated by using inkjet printing process with 8K resolution. It shows the stunning display quality, thanks to the high resolution and fast refresh frequency. It proves that the inkjet printing process is not only cost competitive but also can deliver premium display.