A new threshold‐voltage compensation technique of poly‐Si TFTs for AMOLED display pixel circuits

Abstract— A new threshold‐voltage compensation technique for polycrystal line‐silicon thin‐film transistors (poly‐Si TFTs) used in active‐matrix organic light‐emitting‐diode (AMOLED) display pixel circuits is presented. The new technique was applied to a conventional 2‐transistor—1‐capacitor (2T1C) pixel circuit, and a new voltage‐programmed pixel circuit (VPPC) is proposed. Theoretically, the proposed pixel is the fastest pixel with threshold‐voltage compensation reported in the literature because of the new compression technique implemented with a static circuit block, which does not affect the response time of the conventional 2T1C pixel circuit. Furthermore, the new pixel exhibits all the other advantages of the 2T1C pixel, such as the simplicity of the peripheral drivers and improves other characteristics, such as its behavior in the temperature variations. The verification of the proposed pixel is made through simulations with HSpice. In order to obtain realistic simulations, device parameters were extracted from fabricated low‐temperature poly‐Si (LTPS) TFTs.     

Threshold‐voltage‐compensation methods for AMOLED pixel and analog buffer circuits

Abstract— New pixel‐circuit designs for active‐matrix organic light‐emitting diodes (AMOLEDs) and a new analog buffer circuit for the integrated data‐driver circuit of active‐matrix liquid‐crystal displays (AMLCDs) and AMOLEDs, based on low‐temperature polycrystalline‐silicon thin‐film transistors (LTPS‐TFTs), were proposed and verified by SPICE simulation and measured results. Threshold‐voltage‐compensation pixel circuits consisting of LTPS‐TFTs, an additional control signal line, and a storage capacitor were used to enhance display‐image uniformity. A diode‐connected concept is used to calibrate the threshold‐voltage variation of the driving TFT in an AMOLED pixel circuit. An active load is added and a calibration operation is applied to study the influences on the analog buffer circuit. The proposed circuits are shown to be capable of minimizing the variation from the device characteristics through the simulation and measured results.     

Vt Compensated voltage‐data a‐Si TFT AMOLED pixel circuits

Abstract— Active‐matrix organic light‐emitting‐diode (AMOLED) displays are now entering the marketplace. The use of a thin‐film‐transistor (TFT) active matrix allows OLED displays to be larger in size, higher in resolutions and lower in power dissipation than is possible using a conventional passive matrix. A number of TFT active‐matrix pixel circuits have been developed for luminance control, while correcting for initial and electrically stressed TFT parameter variations. Previous circuits and driving methods are reviewed. A new driving method is presented in which the threshold‐voltage (V_t) compensation performance, along with various circuit improvements for amorphous‐silicon (a‐Si) TFT pixel circuits using voltage data, are discussed. This new driving method along with various circuit improvements is demonstrated in a state‐of‐the‐art 20‐in. a‐Si TFT AMOLED HDTV.     

Novel a‐Si:H TFT pixel circuit for electrically stable top‐anode light‐emitting AMOLEDs

Abstract— A novel pixel circuit for electrically stable AMOLEDs with an a‐Si:H TFT backplane and top‐anode organic light‐emitting diode is reported. The proposed pixel circuit is composed of five a‐Si:H TFTs, and it does not require any complicated drive ICs. The OLED current compensation for drive TFT threshold voltage variation has been verified using SPICE simulations.     

An AMOLED pixel circuit for high image quality of 1000 ppi mobile displays in AR and VR applications

In this paper, an active‐matrix organic light‐emitting diode pixel circuit is proposed to improve the image quality of 5.87‐in. mobile displays with 1000 ppi resolution in augmented and virtual reality applications. The proposed pixel circuit consisting of three thin‐film transistors (TFTs) and two capacitors (3T2C) employs a simultaneous emission driving method to reduce the number of TFTs and the emission current error caused by variations in threshold voltage (Vth) and subthreshold slope (SS) of the low‐temperature polycrystalline silicon TFTs. Using the simultaneous emission driving method, the compensation time is increased to 90 μs from 6.5 μs achieved in the conventional six TFTs and one capacitor (6T1C) pixel circuit. Consequently, the emission current error of the proposed 3T2C pixel circuit was reduced to ±3 least significant bit (LSB) from ±12 LSB at the 32nd gray level when the variations in both the Vth and SS are ±4σ. Moreover, both the crosstalk errors due to the parasitic capacitances between the adjacent pixel circuits and due to the leakage current were achieved to be less than ±1 LSB over the entire gray level. Therefore, the proposed pixel circuit is very suitable for active‐matrix organic light‐emitting diode displays requiring high image quality.     

Static active‐matrix OLED display without pixel refresh enabled by amorphous‐silicon non‐volatile memory

Abstract— An active‐matrix organic light‐emitting‐diode (AMOLED) display which does not require pixel refresh is demonstrated. This was achieved by replacing the thin‐film transistor (TFT) that drives the OLED with a non‐volatile memory TFT, in a 2‐transistor pixel circuit. The threshold voltage of the non‐volatile‐memory TFT can be changed by applying programming voltage pulses to the gate electrode. This approach eliminates the need for storage capacitors, increases the pixel fill factor, and potentially reduces power consumption. Each pixel can be individually programmed or erased using a standard active‐matrix addressing scheme. The programmed image is stored in the display even if power is turned off.     

Pixel structures using the negative feedback method for high‐resolution active matrix organic light‐emitting diode displays

Novel two pixel structures are proposed for high‐resolution active matrix organic light‐emitting diode displays. The proposed two pixels (pixel structures A and B) use the negative feedback method for high‐resolution displays that requires to have small‐sized storage capacitance. The proposed pixel structures A and B improve the luminance uniformity by reducing the voltage distortion in the storage capacitor. However, the proposed pixel structure A is vulnerable to the organic light‐emitting diode (OLED) degradation because the anode voltage of the OLED affects the emission current. In order to compensate the OLED degradation, the proposed pixel structure B stores the turn‐on voltage of OLEDs in the storage capacitor. The simulation results show that the emission current error of the proposed pixel structure B is improved by four times in comparison with the proposed pixel structure A when the OLED turn‐on voltage increases by 0.1 V. Also, the emission current error of the proposed pixel structure B when the threshold voltage of driving thin‐film transistors varies from ?2.2 to ?1.8 V is from ?0.69 least significant bit (LSB) to 0.13 LSB, which shows the excellent luminance uniformity. The proposed pixels are designed for 5.5‐in. full high‐definition displays.     

An active‐matrix organic light‐emitting‐diode pixel circuit for the compensation of I × R voltage drop in power line

Abstract— A new voltage‐driving active‐matrix organic light‐emitting diode (AMOLED) pixel circuit is proposed to improve the display image‐quality of AMOLED displays. Because OLEDs are current‐driven devices, the I × R voltage drop in the power lines is evitable. Accordingly, the I × R voltage‐drop compensation scheme should be included in the pixel‐driving method when a voltage‐compensation method is used. The proposed pixel was designed for the compensation of an I × R voltage drop in the power lines as well as for the compensation of the threshold‐voltage non‐uniformity of low‐temperature polycrystalline‐silicon thin‐film transistors (LTPS TFTs). In order to verify the compensation ability of the proposed pixel, SPICE simulation was performed and compared with those of other conventional pixels. When the Vss voltage varies from 0 to 1 V, the drain current of the proposed pixel decreased by under 1% while that of conventional Vth compensation methods without Vss compensation decreased by over 60%. 2.2‐in. QCIF⁺ full‐color AMOLED displays, which employ the proposed pixel, have been also developed. It was verified by comparison of the display image quality with a conventional panel that our proposed panel successfully overcame the voltage‐drop problems in the power lines.     

New pixel circuits for controlling threshold voltage by back‐gate bias voltage using crystalline oxide semiconductor FETs

We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit.     

Fast voltage‐driving scheme for AMOLED displays based on internal feedback

Abstract— A new driving scheme for active‐matrix organic light‐emitting diodes (AMOLED) displays based on voltage programming is proposed. While conventional voltage drivers have a trade‐off between speed and accuracy, the new scheme is inherently fast and accurate. Based on the new driving scheme, a fast pixel circuit is designed using amorphous‐silicon (a‐Si) thin‐film transistors (TFTs). As the simulation results indicate, this pixel circuit can compensate the threshold‐voltage shift (VT shift) of the driver transistors. This pixel can be programmed in just 10 μsec, and it can compensate the threshold‐voltage shifts over 5 V with an error rate of less than 5% for a 1 ‐μA pixel current.     

A new a‐Si:H TFT pixel circuit employing data‐reflected negative‐bias annealing for a stable and uniform AMOLED

Abstract— A new a‐Si:H pixel circuit to reduce the VTH degradation of driving a‐Si:H thin‐film transistors (TFTs) by data‐reflected negative‐bias annealing (DRNBA) is presented. The new pixel circuit compensates VTH variation induced by non‐uniform degradation of each a‐Si:H pixel due to various electrical stress. The proposed pixel circuit was verified by SPICE simulations. Although the VTH of the driving a‐Si:H TFT varies from 2.5 to 3.0 and 3.5 V, the organic light‐emitting diode (OLED) current changes by only 1.5 and 2.8% in the emission period, respectively. During the negative‐bias annealing period, the negative VGS is applied to the driving TFT by using its own data signal. It is expected that the VTH shift of the driving TFT can be effectively reduced and the VTH shift can be compensated for in our new pixel circuit, which can contribute to a stable and uniform image from an a‐Si:H TFT active‐matrix OLED.     

Amorphous‐oxide TFT backplane for large‐sized AMOLED TVs

Abstract— Amorphous‐oxide thin‐film‐transistor (TFT) arrays have been developed as TFT backplanes for large‐sized active‐matrix organic light‐emitting‐diode (AMOLED) displays. An amorphous‐IGZO (indium gallium zinc oxide) bottom‐gate TFT with an etch‐stop layer (ESL) delivered excel lent electrical performance with a field‐effect mobility of 21 cm²/V‐sec, an on/off ratio of >10⁸, and a subthreshold slope (SS) of 0.29 V/dec. Also, a new pixel circuit for AMOLED displays based on amorphous‐oxide semiconductor TFTs is proposed. The circuit consists of four switching TFTs and one driving TFT. The circuit simulation results showed that the new pixel circuit has better performance than conventional threshold‐voltage (VTH) compensation pixel circuits, especially in the negative state. A full‐color 19‐in. AMOLED display with the new pixel circuit was fabricated, and the pixel circuit operation was verified in a 19‐in. AMOLED display. The AMOLED display with a‐IGZO TFT array is promising for large‐sized TV because a‐IGZO TFTs can provide a large‐sized backplane with excellent uniformity and device reliability.     

A new current‐mirror pixel circuit employing poly‐Si TFTs for active‐matrix organic light‐emitting‐diode displays

Abstract— A novel active‐matrix organic light‐emitting‐diode (AMOLED) display employing a new current‐mirror pixel circuit, which requires four‐poly‐Si TFTs and one‐capacitor and no additional signal lines, has been proposed and sucessfully fabricated. The experimental results show that a new current mirror can considerably compensate luminance non‐uniformity and scale down a data current more than a conventional current‐mirror circuit in order to reduce the pixel charging time and increase the minimum data current. Compared with a conventional two‐TFT pixel, the luminance non‐uniformity induced by the grain boundaries of poly‐Si TFTs can be decreased considerably from 41% to 9.1%.     

High‐temperature thin‐film barriers for foldable AMOLED displays

We present a thin‐film dual‐layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light‐emitting diode displays and that can facilitate foldable active‐matrix organic light‐emitting diode devices with a bending radius of <2 mm. We demonstrate organic light‐emitting diodes that survive bending over 0.5 mm radius for 10.000× based on the high‐temperature bottom barrier. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating active‐matrix organic light‐emitting diode displays on GEN1‐sized substrates.     

Current programming pixel circuit and data‐driver design for active‐matrix organic light‐emitting diodes

Abstract— We propose a new pixel design for active‐matrix organic light‐emitting diodes (AMOLEDs) employing five polycrystalline thin‐film transistors (poly‐Si TFTs) and one capacitor, which decreases the data current considerably in order to reduce the charging time compared with that of conventional current‐mirror structures. Also, the new pixel design compensates the threshold‐voltage degradation of OLEDs caused by continuous operation and the non‐uniformity of poly‐Si TFTs due to excimer‐laser annealing. The proposed pixel circuit was verified by SPICE simulation, based on measured TFT and OLED characteristics. We also propose current‐data‐driver circuitry that reduces the number of shift‐register signals for addressing the current data driver by one‐half.     

A pixel structure for simultaneous programming and emission method for shutter‐glasses‐type stereoscopic 3‐D AMOLED displays

Abstract— A pixel structure for shutter‐glasses‐type stereoscopic 3‐D active‐matrix organic light‐emitting‐diode (AMOLED) displays is proposed. The proposed pixel programs data to the pixel during the light‐emission time of an OLED. Because the emission time of the proposed pixel is extended, it is expected that the proposed pixel not only decreases the peak current of the OLED during the emission period but also reduces flicker. Moreover, the aperture ratio of the proposed pixel is 58.69% for a 50‐in. full‐high‐definition (FHD) condition by minimizing the number of thin‐film transistors (TFTs), capacitors, and control signal lines as seven TFTs, two capacitors, two power lines, and four control lines per unit pixel. Simulation results show that the error in the emission current of the proposed pixel is from ?0.82% to +0.90% when the threshold‐voltage variation of the driving TFT is ±1.00 V, and the maximum variation of the emission current is ?1.35% when a voltage drop in the power line is ?0.50 V on a full‐white‐image display.     

A digitally driven pixel circuit with current compensation for AMOLED microdisplays

A novel digitally driven pixel circuit for active‐matrix organic light‐emitting diode (OLED) microdisplays is proposed and evaluated. This circuit supports both pulse width modulation and pulse density modulation digital drive approaches. Only three transistors and one capacitor are required per pixel for the proposed circuit. A current mirror is used to compensate for the pixel current changes that occur because of the degradation of the OLEDs over time. The compensation current depends on the potential of the common cathode, the properties of the current mirror, and the Width/Length (W/L) ratio of the drive transistor. The proposed digital pixel circuit also has advantages in circuit layout compared with analog pixel circuits.     

In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors

We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.     

Active‐matrix organic light‐emitting displays employing two thin‐film‐transistor a‐Si:H pixels on flexible stainless‐steel foil

Abstract— An active‐matrix organic light‐emitting diode (AMOLED) display driven by hydrogenated amorphous‐silicon thin‐film transistors (a‐Si:H TFTs) on flexible, stainless‐steel foil was demonstrated. The 2‐TFT voltage‐programmed pixel circuits were fabricated using a standard a‐Si:H process at maximum temperature of 280°C in a bottom‐gate staggered source‐drain geometry. The 70‐ppi monochrome display consists of (48 × 4) × 48 subpixels of 92 ×369 μm each, with an aperture ratio of 48%. The a‐Si:H TFT pixel circuits drive top‐emitting green electrophosphorescent OLEDs to a peak luminance of 2000 cd/m².     

An external compensation method for AMOLED using the concept of ramp‐stop

In this paper, we propose an external feedback method to compensate the device variation for active‐matrix organic light‐emitting diode. The pixel data current is controlled by ramping the gate voltage and converted to the sensed voltage V_sense in real time. When V_sense is equal to a preset voltage V_data, the switching block outputs the low potential to stop the ramping. Therefore, the gate voltage is locked at the value corresponding to the target data current. This circuit is implemented with three thin‐film transistors in the active area and some functional blocks in driver integrated circuit (IC), namely, sentinel block, current‐voltage converting block, and switching block. Unlike the other usual methods of external compensation requiring double number of connections between driver IC and glass, by using the common ramping signal and a simple circuit made on glass, the proposed method can be implemented with only one pin per column.