Ultra‐high‐resolution 1058‐ppi OLED displays with 2.78‐in size using CAAC‐IGZO FETs with tandem OLED device and single OLED device

We fabricated new 2.78‐in 1058‐ppi organic light‐emitting diode (OLED) displays. The displays used OLED devices with a tandem structure and a single structure and a field effect transistor (FET) using c‐axis aligned crystalline In–Ga–Zn–O (CAAC‐IGZO) for an active layer and employing the 1.5‐µm rule over a glass substrate. Even in the displays with such high resolution exceeding 1000 ppi, crosstalk that was observed in the lower luminance region was suppressed. The displays achieved high color reproducibility and reduced viewing angle dependence.     

13.3‐inch 8k4k 664‐ppi foldable OLED display using crystalline oxide semiconductor FETs

A prototype 13.3‐inch 8k4k 664‐ppi high‐resolution foldable organic light emitting diode display is constructed. C‐axis aligned a‐b‐plane‐anchored crystal In–Ga–Zn oxide field effect transistors designed using a 1.5‐µm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is used to correct pixel current.     

A 5291‐ppi organic light‐emitting diode display using field‐effect transistors including a c‐axis aligned crystalline oxide semiconductor

C‐axis‐aligned crystalline‐oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC‐OS FETs as the backplane.     

A foldable OLED display with an in‐cell touch sensor having embedded metal‐mesh electrodes

A foldable organic light‐emitting diode display integrating a touch sensor is fabricated. The touch sensor has an in‐cell structure where metal‐mesh sensor electrodes are formed in a counter substrate. It is demonstrated that touch on the entire panel surface, including a bent portion, is detected and that the touch panel operates correctly after 100,000 folding operations with a radius of curvature of 5 mm.     

New pixel circuits for controlling threshold voltage by back‐gate bias voltage using crystalline oxide semiconductor FETs

We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit.     

An 81‐in. 8 K OLED Kawara‐type multidisplay with flexible displays that provides a seamless image

We fabricated a Kawara‐type multidisplay, providing a seamless image by precisely arranging 13.5‐in. organic light‐emitting diode flexible panels with transparent edges on two adjacent sides. To make overlapping portions less visible, the transparent regions were adjusted optically and corrected in luminance and chromaticity. We used 36 panels to fabricate an 81‐in. 8 K organic light‐emitting diode Kawara‐type multidisplay.     

A novel low‐power gate driver architecture for large 8 K 120 Hz liquid crystal display employing IGZO technology

A novel low‐power gate driver architecture was developed for large 8 K 120 Hz liquid crystal display panel. For this application, not only high‐speed driving but also low power consumption is required. We employed a high mobility In‐Ga‐Zn‐O, dual V_GL level driving method, and gate driver circuit driven by DC supply. The simulation results show that our proposals meet 8 K 120 Hz driving requirements. Also, we have fabricated a prototype panel and confirmed both high‐speed driving and low power consumption.     

IGZO‐TFT technology for large‐screen 8K display

We succeeded in G8 factory for mass production of Indium–Gallium–Zink–Oxide thin‐film transistor (IGZO‐TFT) for the first time in the world. The initial TFT process was an etching stop‐type TFT, but now, we are mass producing channel etching‐type TFTs. And, its application range is smartphones, tablets, PCs, monitors, TV, and so on. In particular, because of recent demands for high‐resolution and narrow frame, our IGZO display has been advanced in technology development with gate driver in panel. In this paper, we report development combining low resistance technology and the latest IGZO‐TFT (IGZO5) for large‐screen 8K display.     

Single‐source dual‐layer amorphous IGZO thin‐film transistors for display and circuit applications

In this study, the authors report on high‐quality amorphous indium–gallium–zinc oxide thin‐film transistors (TFTs) based on a single‐source dual‐layer concept processed at temperatures down to 150°C. The dual‐layer concept allows the precise control of local charge carrier densities by varying the O₂/Ar gas ratio during sputtering for the bottom and top layers. Therefore, extensive annealing steps after the deposition can be avoided. In addition, the dual‐layer concept is more robust against variation of the oxygen flow in the deposition chamber. The charge carrier density in the TFT channel is namely adjusted by varying the thickness of the two layers whereby the oxygen concentration during deposition is switched only between no oxygen for the bottom layer and very high concentration for the top layer. The dual‐layer TFTs are more stable under bias conditions in comparison with single‐layer TFTs processed at low temperatures. Finally, the applicability of this dual‐layer concept in logic circuitry such as 19‐stage ring oscillators and a TFT backplane on polyethylene naphthalate foil containing a quarter video graphics array active‐matrix organic light‐emitting diode display demonstrator is proven.     

Circuits and AMOLED display with self‐aligned a‐IGZO TFTs on polyimide foil

A process to make self‐aligned top‐gate amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5 kΩ/□. TFTs show field‐effect mobility of 12.0 cm²/(V.s), sub‐threshold slope of 0.5 V/decade, and current ratio (I_ON/OFF) of >10⁷. The threshold voltage shifts of the TFTs were 0.5 V in positive (+1.0 MV/cm) bias direction and 1.5 V in negative (?1.0 MV/cm) bias direction after extended stressing time of 10⁴ s. We achieve a stage‐delay of ~19.6 ns at V_DD = 20 V measured in a 41‐stage ring oscillator. A top‐emitting quarter‐quarter‐video‐graphics‐array active‐matrix organic light‐emitting diode display with 85 ppi (pixels per inch) resolution has been realized using only five lithographic mask steps. For operation at 6 V supply voltage (V_DD), the brightness of the display exceeds 150 cd/m².     

Fabrication of flexible organic light‐emitting‐diode display with a flexible color filter driven by In—Ga—Zn—Oxide TFTs

Abstract— A novel flexible active‐matrix organic light‐emitting‐diode (OLED) display fabricated on planarized stainless—used‐steel substrates with a resolution of 85 dpi in a 4.7‐in. active area has been demonstrated. Amorphous indium—gallium—zinc—oxide thin‐film transistors were used as the backplane for the OLED display with high device performance, high electrical stability, and long lifetime. A full‐color moving image at a frame frequency of 60 Hz was also realized by using a flexible color filter directly patterned on a plastic substrate with a white OLED as the light source.     

High performance a‐IGZO thin‐film transistors with mf‐PVD SiO2 as an etch‐stop‐layer

In this work, we report on high‐performance bottom‐gate top‐contact (BGTC) amorphous‐Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) thin‐film transistor (TFT) with SiO₂ as an etch‐stop‐layer (ESL) deposited by medium frequency physical vapor deposition (mf‐PVD). The TFTs show field‐effect mobility (μ_FE) of 16.0 cm²/(V.s), sub‐threshold slope (SS^?1) of 0.23 V/decade and off‐currents (I_OFF) < 1.0 pA. The TFTs with mf‐PVD SiO₂ ESL deposited at room temperature were compared with TFTs made with the conventional plasma‐enhanced chemical vapor deposition (PECVD) SiO₂ ESL deposited at 300 °C and at 200 °C. The TFTs with different ESLs showed a comparable performance regarding μ_FE, SS^?1, and I_OFF, however, significant differences were measured in gate bias‐stress stability when stressed under a gate field of +/?1 MV/cm for duration of 10⁴ s. The TFTs with mf‐PVD SiO₂ ESL showed lower threshold‐voltage (V_TH) shifts compared with TFTs with 300 °C PECVD SiO₂ ESL and TFTs with 200 °C PECVD SiO₂ ESL. We associate the improved bias‐stress stability of the mf‐PVD SiO₂ ESL TFTs to the low hydrogen content of the mf‐PVD SiO₂ layer, which has been verified by Rutherford‐Back‐Scattering‐Elastic‐Recoil‐Detection technique.     

Novel back‐channel‐etch process flow based a‐IGZO TFTs for circuit and display applications on PEN foil

In this study, we report high‐quality amorphous indium–gallium–zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back‐channel‐etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high‐resolution backplanes and related circuits. The maximum processing temperature was limited to less than 165 °C in order to ensure good overlay accuracy (<1 µm) on foil. The presented process flow differs from the previously reported flow as we define the Mo source and drain contacts by dry etch prior to a‐IGZO patterning. The TFTs show good electrical performance, including field‐effect mobilities in the range of 15.0 cm²/(V·s), subthreshold slopes of 0.3 V/decade, and off‐currents <1.0 pA on foil. The threshold voltage shifts of the TFTs measured were less than 1.0 V after a stressing time of 10⁴ s in both positive (+1.0 MV/cm) and negative (?1.0 MV/cm) bias directions. The applicability of this new BCE process flow is demonstrated in a 19‐stage ring oscillator, demonstrated to operate at a supply voltage of 10 V with a stage delay time of 1.35 µs, and in a TFT backplane driving a 32 × 32 active‐matrix organic light‐emitting diode display.     

Energy‐recycling high‐contrast organic light‐emitting devices

Abstract— It is reported that by integrating OLEDs with solar cells, ambient‐light reflection as low as 1.4% (even superior to that achieved with polarizers) can be achieved without compromising the EL efficiency for high‐contrast display applications. Furthermore, in such a configuration, the photon energies of both the incident ambient light and the portion of OLED emission not getting outside of the device can be recycled into useful electrical power via the photovoltaic action, instead of being wasted as in other reported contrast‐enhancement techniques. These features, we believe, shall make this present technique attractive for high‐contrast display applications and portable/mobile electronics that are highly power‐aware.     

Truly wearable display comprised of a flexible battery,flexible display panel,and flexible printed circuit

In an effort to create a truly flexible and wearable display having a flexible battery as well as a flexible organic light‐emitting diode panel and a flexible printed circuit, a flexible lithium‐ion battery has been developed, and a prototype wrist‐wearable or arm‐wearable display has been fabricated. Owing to improvements in the internal structure and exterior of the lithium‐ion battery, no remarkable changes in charge and discharge curves and the internal state of the electrodes were observed even after conducting a 10,000‐cycle bending test. Therefore, this flexible lithium‐ion battery prototype demonstrated remarkable bending resistance. Thus, we succeeded in fabricating a truly flexible and wearable display comprised of a flexible organic light‐emitting diode panel, a flexible printed circuit, and a flexible battery.     

Development of a high‐resolution RGBW flexible display using a white organic light‐emitting diode with microcavity structure and that of a side‐roll touch panel

In this study, white organic electroluminescent devices with microcavity structures were developed. A flexible high‐resolution active‐matrix organic light‐emitting diode display with low power consumption using red, green, blue, and white sub‐pixels formed by a color‐filter method was fabricated. In addition, a side‐roll touch display was developed in combination with a capacitive flexible touch screen.     

High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

A pixel circuit and a gate driver on array for light‐emitting display are presented. By simultaneously utilizing top‐gate n‐type oxide and p‐type low‐temperature polycrystalline silicon (LTPS) thin‐film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active‐matrix LED (AMOLED) panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved.     

Development of 8‐in. oxide‐TFT‐driven flexible AMOLED display using high‐performance red phosphorescent OLED

An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiO_x layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.     

A novel electron‐transport material for organic light‐emitting devices

Abstract— A nanocrystalline electron‐transport material [ET68] was introduced into organic light‐emitting devices (OLEDs). By integrating a p‐doped transport system and phosphorescent emitters, a very bright and stable device could be obtained. Furthermore, 40% saving in power consumption can be achieved when the efficient pixels with ET68 were applied to AMOLEDs.     

Inorganic EL devices with high‐performance blue phosphor and application to 34‐in. flat‐panel televisions

Abstract— A high‐performance inorganic electroluminescence (EL) device has been successfully developed by using an EL structure with a thick dielectric layer (TDEL) and sputtered BaAl₂S₄:Eu blue phosphor. The luminance and efficacy were higher than 2300 cd/m² and 2.5 lm/W at L⁶⁰, 120 Hz, respectively. Furthermore, the luminance at L⁶⁰, 1.2 kHz was more than 23,000 cd/m². The phosphor layer has a single‐phase and a highly oriented crystalline structure. The phosphor also shows high stability in air. A 34‐in. high‐definition television (HDTV) has been developed by combining a TDEL structure and color‐conversion materials. The panels with an optimized color filter demonstrated a peak luminance of 350 cd/m², a color gamut of more than 100% NTSC, and a wide viewing angle similar to that of plasma‐display panels. The high reproducibility of the 34‐in. panels using our pilot line has been confirmed.