共查询到20条相似文献,搜索用时 31 毫秒
1.
Shunpei Yamazaki Takuya Hirohashi Masahiro Takahashi Shunsuke Adachi Masashi Tsubuku Junichi Koezuka Kenichi Okazaki Yohsuke Kanzaki Hiroshi Matsukizono Seiji Kaneko Shigeyasu Mori Takuya Matsuo 《Journal of the Society for Information Display》2014,22(1):55-67
Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs. 相似文献
2.
Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes 下载免费PDF全文
Mitsuru Nakata Genichi Motomura Yoshiki Nakajima Tatsuya Takei Hiroshi Tsuji Hirohiko Fukagawa Takahisa Shimizu Toshimitsu Tsuzuki Yoshihide Fujisaki Toshihiro Yamamoto 《Journal of the Society for Information Display》2016,24(1):3-11
We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm2/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process. 相似文献
3.
Ultra‐high‐resolution 1058‐ppi OLED displays with 2.78‐in size using CAAC‐IGZO FETs with tandem OLED device and single OLED device 下载免费PDF全文
Kohei Yokoyama Shinichi Hirasa Noriko Miyairi Yoshitaka Dozen Toshiki Sasaki Yasuhiro Jimbo Kouhei Toyotaka Makoto Kaneyasu Hiroyuki Miyake Satoshi Seo Yoshiharu Hirakata Shunpei Yamazaki Masataka Nakada Takahiro Sato Naoto Goto 《Journal of the Society for Information Display》2016,24(3):159-167
We fabricated new 2.78‐in 1058‐ppi organic light‐emitting diode (OLED) displays. The displays used OLED devices with a tandem structure and a single structure and a field effect transistor (FET) using c‐axis aligned crystalline In–Ga–Zn–O (CAAC‐IGZO) for an active layer and employing the 1.5‐µm rule over a glass substrate. Even in the displays with such high resolution exceeding 1000 ppi, crosstalk that was observed in the lower luminance region was suppressed. The displays achieved high color reproducibility and reduced viewing angle dependence. 相似文献
4.
Yoshiki Nakajima Mitsuru Nakata Tatsuya Takei Hirohiko Fukagawa Genichi Motomura Hiroshi Tsuji Takahisa Shimizu Yoshihide Fujisaki Taiichiro Kurita Toshihiro Yamamoto 《Journal of the Society for Information Display》2014,22(3):137-143
An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiOx layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display. 相似文献
5.
Ya‐Hui Yang Sidney S. Yang Kan‐Sen Chou 《Journal of the Society for Information Display》2011,19(3):247-252
Abstract— Zinc oxide (ZnO) and indium gallium zinc oxide (IGZO) thin films subjected to laser irradiation were investigated. The structural, optical, and electrical properties of the as‐deposited and laser‐irradiated films at different laser dosages were studied. The crystallinity of the structure increased after laser treatment. The transmittances without/with laser irradiation had a net rise of 85–92% and 80–95% (@550 nm) for 250‐nm ZnO and IGZO films, respectively. Thin‐film transistors (TFTs) with ZnO and IGZO as the active layer were fabricated. The as‐deposited ZnO/IGZO TFT devices had a field‐effect mobility of 0.19 and 1.3 cm2/V‐sec, respectively. The electrical characteristics increased by more than 2.8 times for ZnO and by 5.8 times for IGZO with laser treatment. The field‐effect mobility of ZnO and IGZO are 0.5 and 7.65 cm2/V‐sec. 相似文献
6.
Ryo Hayashi Masato Ofuji Nobuyuki Kaji Kenji Takahashi Katsumi Abe Hisato Yabuta Masafumi Sano Hideya Kumomi Kenji Nomura Toshio Kamiya Masahiro Hirano Hideo Hosono 《Journal of the Society for Information Display》2007,15(11):915-921
Abstract— High‐performance and excellent‐uniformity thin‐film transistors (TFTs) having bottom‐gate structures are fabricated using an amorphous indium‐gallium‐zinc‐oxide (IGZO) film and an amorphous‐silicon dioxide film as the channel layer and the gate insulator layer, respectively. All of the 94 TFTs fabricated with an area 1 cm2 show almost identical transfer characteristics: the average saturation mobility is 14.6 cm2/(V‐sec) with a small standard deviation of 0.11 cm2/(V‐sec). A five‐stage ring‐oscillator composed of these TFTs operates at 410 kHz at an input voltage of 18 V. Pixel‐driving circuits based on these TFTs are also fabricated with organic light‐emitting diodes (OLED) which are monolithically integrated on the same substrate. It is demonstrated that light emission from the OLED cells can be switched and modulated by a 120‐Hz ac signal input. Amorphous‐IGZO‐based TFTs are prominent candidates for building blocks of large‐area OLED‐display electronics. 相似文献
7.
Shintaro Nakano Nobuyoshi Saito Kentaro Miura Tatsunori Sakano Tomomasa Ueda Keiji Sugi Hajime Yamaguchi Isao Amemiya Masato Hiramatsu Arichika Ishida 《Journal of the Society for Information Display》2012,20(9):493-498
We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin‐film transistors (a‐IGZO TFTs) on transparent polyimide films against bias‐temperature stress below 100 mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0‐in. flexible active‐matrix organic light‐emitting diode was demonstrated with the highly reliable a‐IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass‐production lines. We believe that flexible organic light‐emitting diode displays can be mass produced using a‐IGZO TFT backplane on polyimide films. 相似文献
8.
Maarten Rockelé Duy‐Vu Pham Jürgen Steiger Silviu Botnaras Dennis Weber Jan Vanfleteren Tom Sterken Dieter Cuypers Soeren Steudel Kris Myny Sarah Schols Bas van der Putten Jan Genoe Paul Heremans 《Journal of the Society for Information Display》2012,20(9):499-507
High‐performance solution‐based n‐type metal oxide thin‐film transistors (TFTs), fabricated directly on polyimide foil at a post‐annealing temperature of only 250 °C, are realized and reported. Saturation mobilities exceeding 2 cm²/(Vs) and on‐to‐off current ratios up to 108 are achieved. The usage of these oxide n‐type TFTs as the pixel drive and select transistors in future flexible active‐matrix organic light‐emitting diode (AMOLED) displays is proposed. With these oxide n‐type TFTs, fast and low‐voltage n‐type only flexible circuitry is demonstrated. Furthermore, a complete 8‐bit radio‐frequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n‐type TFTs have reached already a high level of yield and reliability. The integration of the same solution‐based oxide n‐type TFTs with organic p‐type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n‐type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line‐drive circuitry embedded at the borders of flexible AMOLED displays. 相似文献
9.
Hsing‐Hung Hsieh Cheng‐Han Wu Chih‐Wei Chien Chang‐Ken Chen Chao‐Shun Yang Chung‐Chih Wu 《Journal of the Society for Information Display》2010,18(10):796-801
Abstract— Amorphous‐oxide‐semiconductor thin‐film transistors (TFTs) have gained wide attention in recent years due to their many merits. In this paper, a series of top‐gate transparent thin‐film transistors (TFTs) based on amorphous‐indium—gallium—zinc—oxide (a‐IGZO) semiconductors have been fabricated and investigated. Specifically, low‐temperature SiNx and SiOx were used as the gate insulator and different Ar/O2 gas‐flow ratios were used for a‐IGZO channel deposition to study the influences of gate insulators and channel‐deposition conditions. In addition to the investigation of device performance, the stability of these TFTs was also examined by applying constant‐current stressing. It was found that a high mobility of 30‐45 cm2/V‐sec and small threshold‐voltage shift in constant‐current stressing can be achieved using SiNx with suitable hydrogen‐content stoichiometry as the gate insulator and the carefully adjusted Ar/O2 flow ratio for channel deposition. These results may be associated with hydrogen incorporation into the channel, the lower defect trap density, and the better water/oxygen barrier properties (impermeability) of the low‐temperature SiNx. 相似文献
10.
Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control 下载免费PDF全文
Manoj Nag Florian De Roose Kris Myny Soeren Steudel Jan Genoe Guido Groeseneken Paul Heremans 《Journal of the Society for Information Display》2017,25(6):349-355
In this work, we have reported dual‐gate amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs), where a top‐gate self‐aligned TFTs has a secondary bottom gate and the TFT integration comprises only five mask steps. The electrical characteristics of a‐IGZO TFTs under different gate control are compared. With the enhanced control of the channel with two gates connected together, parameters such as on current (ION), sub‐threshold slope (SS?1), output resistance, and bias‐stress instabilities are improved in comparison with single‐gate control self‐aligned a‐IGZO TFTs. We have also investigated the applicability of the dual‐gate a‐IGZO TFTs in logic circuitry such as 19‐stage ring oscillators. 相似文献
11.
Manoj Nag Maarten Rockele Soeren Steudel Adrian Chasin Kris Myny Ajay Bhoolokam Myriam Willegems Steve Smout Peter Vicca Marc Ameys Tung Huei Ke Sarah Schols Jan Genoe Jan‐Laurens P. J. van der Steen Guido Groeseneken Paul Heremans 《Journal of the Society for Information Display》2013,21(9):369-375
In this study, we report high‐quality amorphous indium–gallium–zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back‐channel‐etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high‐resolution backplanes and related circuits. The maximum processing temperature was limited to less than 165 °C in order to ensure good overlay accuracy (<1 µm) on foil. The presented process flow differs from the previously reported flow as we define the Mo source and drain contacts by dry etch prior to a‐IGZO patterning. The TFTs show good electrical performance, including field‐effect mobilities in the range of 15.0 cm2/(V·s), subthreshold slopes of 0.3 V/decade, and off‐currents <1.0 pA on foil. The threshold voltage shifts of the TFTs measured were less than 1.0 V after a stressing time of 104 s in both positive (+1.0 MV/cm) and negative (?1.0 MV/cm) bias directions. The applicability of this new BCE process flow is demonstrated in a 19‐stage ring oscillator, demonstrated to operate at a supply voltage of 10 V with a stage delay time of 1.35 µs, and in a TFT backplane driving a 32 × 32 active‐matrix organic light‐emitting diode display. 相似文献
12.
Yuanfeng Chen Suhui Lee Hyunho Kim Jiseob Lee Di Geng Jin Jang 《Journal of the Society for Information Display》2020,28(6):528-534
We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring. 相似文献
13.
Yeon Gon Mo Minkyu Kim Chul Kyu Kang Jong Han Jeong Yong Sung Park Chaun Gi Choi Hye Dong Kim Sang Soo Kim 《Journal of the Society for Information Display》2011,19(1):16-20
Abstract— Amorphous‐oxide thin‐film‐transistor (TFT) arrays have been developed as TFT backplanes for large‐sized active‐matrix organic light‐emitting‐diode (AMOLED) displays. An amorphous‐IGZO (indium gallium zinc oxide) bottom‐gate TFT with an etch‐stop layer (ESL) delivered excel lent electrical performance with a field‐effect mobility of 21 cm2/V‐sec, an on/off ratio of >108, and a subthreshold slope (SS) of 0.29 V/dec. Also, a new pixel circuit for AMOLED displays based on amorphous‐oxide semiconductor TFTs is proposed. The circuit consists of four switching TFTs and one driving TFT. The circuit simulation results showed that the new pixel circuit has better performance than conventional threshold‐voltage (VTH) compensation pixel circuits, especially in the negative state. A full‐color 19‐in. AMOLED display with the new pixel circuit was fabricated, and the pixel circuit operation was verified in a 19‐in. AMOLED display. The AMOLED display with a‐IGZO TFT array is promising for large‐sized TV because a‐IGZO TFTs can provide a large‐sized backplane with excellent uniformity and device reliability. 相似文献
14.
Shogo Uesaka Ryohei Yamaoka Toshiki Sasaki Akihiro Chida Susumu Kawashima Toshiyuki Isa Satoshi Seo Yoshiharu Hirakata Shota Yatsuzuka Takayuki Ohide Masataka Nakada Shunpei Yamazaki Manabu Niboshi Yoshiyuki Isomura Yuto Tsukamoto Shinichi Kawato Katsuhiro Kikuchi Seiichi Mitsui 《Journal of the Society for Information Display》2014,22(12):603-612
In this study, the device structure of a white tandem organic light‐emitting diode (OLED) was changed to control the emission area and thereby achieve less luminance decay. A long‐life 13.5‐inch 4 K flexible c‐axis‐aligned crystal oxide semiconductor (CAAC‐OS) active‐matrix OLED with less color shift and high resolution was fabricated using this long‐life white OLED, transfer technology, and a CAAC‐OS field‐effect transistor. 相似文献
15.
Jae Kyeong Jeong Jong Han Jeong Hui Won Yang Tae Kyung Ahn Minkyu Kim Kwang Suk Kim Bon Seog Gu Hyun‐Joong Chung Jin‐Seong Park Yeon‐Gon Mo Hye Dong Kim Ho Kyoon Chung 《Journal of the Society for Information Display》2009,17(2):95-100
Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm2/V‐sec, threshold voltage of 1.1 V, on/off ratio >109, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system. 相似文献
16.
Shuichi Katsui Hidetomo Kobayashi Takashi Nakagawa Yuki Tamatsukuri Hideaki Shishido Shogo Uesaka Ryohei Yamaoka Takaaki Nagata Tomoya Aoyama Kosei Nei Yutaka Okazaki Takayuki Ikeda Shunpei Yamazaki 《Journal of the Society for Information Display》2019,27(8):497-506
C‐axis‐aligned crystalline‐oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC‐OS FETs as the backplane. 相似文献
17.
Masataka Kano Keita Arihara Katsuyuki Motai Yasunori Naitou Hiroki Maeda 《Journal of the Society for Information Display》2010,18(12):1078-1083
Abstract— A novel flexible active‐matrix organic light‐emitting‐diode (OLED) display fabricated on planarized stainless—used‐steel substrates with a resolution of 85 dpi in a 4.7‐in. active area has been demonstrated. Amorphous indium—gallium—zinc—oxide thin‐film transistors were used as the backplane for the OLED display with high device performance, high electrical stability, and long lifetime. A full‐color moving image at a frame frequency of 60 Hz was also realized by using a flexible color filter directly patterned on a plastic substrate with a white OLED as the light source. 相似文献
18.
Hirokazu Furuta Jun Xu Shunsuke Kobayashi 《Journal of the Society for Information Display》2003,11(3):433-436
Abstract— An intrinsic half‐V‐mode ferroelectric liquid‐crystal display (FLCD) exhibiting a high contrast ratio (300:1), owing to defect‐free gray‐scale capability, with a high response speed (τ ? 400 μsec) and good switchability with TFTs, has been developed. Furthermore, this FLCD features high‐temperature reliability owing to the use of a special hybrid alignment technique. We successfully fabricated an active‐matrix poly‐Si TFT field‐sequential full‐color (FS FC) LCD with XGA specifications and a 0.9‐in. diagonal using a half‐V‐mode FLCD and an RGB light‐emitting‐diode (LED) array microdisplay. It is shown that the fabricated active‐matrix FS FCLCD exhibits good moving‐image performance with high full‐color display capability. 相似文献
19.
Effect on electrical performance of titanium co‐sputtered IZO active‐channel thin‐film transistor 下载免费PDF全文
Chanhee Park Yooseong Lim Seungsoo Ha Yongjin Im Minhyung Jang Seung‐il Choi Ji‐in Park Moonsuk Yi 《Journal of the Society for Information Display》2015,23(8):371-376
We investigated the electrical performance of Ti–IZO active‐channel layer thin‐film transistors (TFTs) using a radio frequency (RF) magnetron co‐sputtering system to co‐sputter IZO and Ti targets. The samples were fabricated by changing the RF gun power of the IZO. The other parameters such as the RF gun power of the Ti target, oxygen partial pressure [O2/(Ar + O2)], and initial and process pressure of the chamber were unchanged. Unlike the sample sputtered only with IZO, the thin films of the Ti–IZO samples could control the oxygen vacancy because Ti reacts with the oxygen in the IZO. Therefore, Ti–IZO thin films can suppress the carrier concentration and thus have an effect on the electrical performance of TFTs. 相似文献
20.
Chengyuan Dong Yuting Chen Zhe Hu Jie Wu Daxiang Zhou Haiting Xie Cheng‐Lung Chiang Po‐Lin Chen Tzu‐Chieh Lai Chang‐Cheng Lo Alan Lien 《Journal of the Society for Information Display》2013,21(11):461-466
Process development of inverted‐staggered amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) with wet‐etched electrodes was employed in this paper. Five metals (Al, Cu, Ti, Ta, and Cr) as well as various etchants were comparatively investigated, indicating H2O2 based solution etched Ta films were good candidates for the wet‐etched electrodes of a‐IGZO TFTs. The aforementioned findings along with other improving attempts successfully established inexpensive processing steps and conditions with which stable a‐IGZO TFTs were finally fabricated. The device performance was reasonably good enough (μFE of 6.0 cm2/V·s, Vth of 2.5 V, SS of 1.8 V/decade, and Ion/Ioff of 106) to meet the requirements of applications especially for small‐sized flat panel displays. 相似文献