VLOC 进出黑德兰港FIB 泊位安全操纵方法研究

澳大利亚黑德兰港FIB 泊位因其特殊的地理位置与水文气象条件给进出该泊位的VLOC 造成了操纵上的困难。根据FIB 泊位的特殊地理位置以及影响进出泊位安全的水文气象条件,对VLOC 进出FIB 泊位的操纵方法及航线设计进行了详细阐述,分析了VLOC 靠、离该泊位以及停泊期间的风险点,并提出了预防措施。     

新一代微细加工的手段聚焦离子束技术及组合系统

随着现代微电子工业的迅猛发展,电子元器件的尺寸越来越小、电路的集成度越来越高。尤其是近几年,由于制造工艺和手段的日趋成熟,使得高性能、高质量的新一代集成电路层出不穷。20世纪90年代发展起来的聚焦离子束技术是一种集形貌观测、定位制样、成份分析、薄膜淀积和无掩模刻蚀各过程于一身的新型微纳加工技术。它大大提高了微电子工业上材料、工艺、器件分析及修补的精度和速度,目前已经成为微电子技术领域必不可少的关键技术之一。     

聚焦离子束技术制备超薄TEM样品-X2样品台的应用

聚焦离子束技术在制备TEM样品方面得到了广泛的应用。普通传统的制样减薄方法存在远端薄区极易弯曲和薄区厚度不均匀的问题。针对存在的这些问题本文使用Zeiss公司的X2样品台采取交叉减薄的方法制备一个具有均匀的极薄的TEM样品。本文主要介绍X2样品台的工作原理和交叉减薄的实验过程,并分析了该方法在制备TEM样品时存在的优缺点以及其独特的适用性。     

新一代互联网体系结构（2）

互联网目前面临着各种问题和挑战,其体系结构再次成为了网络领域研究的热点之一。本讲座将分为3期介绍互联网体系结构的研究现状及未来的展望。第1期介绍了目前互联网体系结构面临的挑战以及国内外的研究现状。第2期介绍现有互联网体系结构向新一代互联网体系结构演进中的关键技术与解决方案,内容涉及新型路由寻址体系结构、端到端原则、网络安全性与可信性等方面的研究。第3期将介绍以全新的革命性方式来解决当前互联网体系结构缺陷的新一代互联网体系结构,包括国内外的研究现状和主要的解决方案,并对新一代互联网体系结构的研究进行展望和总结。     

基于J2EE架构大客户文档流转系统简介

介绍了大客户文档流转系统项目提出的背景、意义,进行了可行性分析,采用MVC设计模式控制系统结构及J2EE系统架构的实现。     

新一代数码相机—富士S2 Pro

两年前,日本富士公司(Fujifilm)推出一款以专业摄影师为对象的单镜头反光式专业数码相机S1 Pro,它采用Nikon机身及镜头,成为轰动一时的数码相机,被摄影界誉为数码机王。如今富士公司推出的第二代产品S2 Pro数码相机,在日本及美国的多次数码相机测试中,成为同级单镜反光式数码相机影像表现最佳的一部,足以证明它非常优秀的性能,再次成为数码专业摄影师的新宠。     

新建400m^2演播室视频系统简介

数字技术的发展对广播电视产品的发展产生了根本的影响。数字技术的应用带来了提高图像质量、功能增加、操作简便等诸多优点。就数字系统而言，串行分量数字系统在传输距离、传输线路、系统调整和系统安装等方面的优点是显而易见的。另一方面，除各种各样的系统方案外，还有一个趋势就是格式的变化。与现行4：3格式相比，图像变得更宽，即16：9，这更适合于人类的视野。     

FIB参数对低介电常数介质TEM样品制备的影响

研究了使用聚焦离子束(FIB)方法制备低k介质的TEM样品时离子束参数对介质微观形貌的影响,发现低k介质的微观形貌与离子束参数具有较强的相关性。传统大离子束流、高加速电压的FIB参数将导致低k介质多孔性增加、致密度下降;且k值越低,离子束参数影响越大。对于亚65nm工艺中使用的k值为2.7的介质,当离子束流减小到50pA、加速电压降低到5kV时,FIB制样方法对介质致密度的影响基本可忽略,样品微观形貌得到了显著改善;而对于65nm工艺中使用的k值为3.0的介质,其微观形貌受离子束参数的影响则相对较小。     

Low temperature FIB cross section: Application to indium micro bumps

This paper presents the interest of low temperature FIB cross section on indium micro bump. Experimental setup and results which demonstrate the interest of cooling the sample are detailed. We will explain the artefacts observed during FIB milling at room temperature. The Ga ions interact with indium to create locally an eutectic alloy, with melting point below room temperature. Inside the vacuum chamber, this eutectic alloys sublimates quickly and voids appear in the cross section. Cooling the sample with cryogenic stage enables to perform “clean” cross section without these artefacts.     

Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures

In this paper advanced sample preparation techniques based on focused ion beam (FIB) optimized for TEM investigation of high electron mobility transistor (HEMT) structures are presented. It is shown that the usage of an innovative in-situ lift-out method combined with X2 window and backside milling techniques as well as live thickness control and end point detection can significantly improve the quality of electron transparent samples required for high resolution TEM investigations. This advanced preparation flow is evaluated and demonstrated at GaN HEMT structures for atomic resolution TEM investigation.     

聚焦离子束装置中的图像采集与加工控制

本文介绍了聚焦离子束（FIB）装置中图像采集及在微细加工及微区分析中的图形定位、控制，详细介绍了国产微通道板（MCP）在图像显示中的特点、作用及其应用经验和效果，介绍了计算机支持下的图形加工控制与显示系统。     

Even FIB Decomp osition Model Based on Storage and Traffc Balancing

The sharp expansion of the FIB table rapidly aggravates the hardware cost of Line cards (LCs) in the high-performance distributed routers. The storage op-timization of FIB becomes a research hotspot. The traffic load of each LC is still very different in the current non-full backup storage, which has a deep impact on the overall forwarding performance of the routers. An even FIB de-composition model was proposed, namely FEST, aiming for a two-dimension balance in both storage and traffic. Based on the splitting and distribution filters, FEST starts with splitting the root prefixes and utilizes the optimal adapta-tion algorithm to evenly distribute the routing entries and the traffic to LCs without the modification of the hard-ware designs of the current LCs. Eventually FEST uses the location routing to determine the location and the for-warding of every packet. The experiment results show that different LCs get very even numbers of routing entries and relatively even traffic in FEST.     

聚焦离子束技术制备与样品表面平行的TEM样品

制备目标材料的高质量TEM样品对TEM测试表征和结果分析具有决定性作用.聚焦离子束（FIB）技术由于其微观定位选区制样的优势在TEM样品制备上已有一定应用.本文介绍了FIB/SEM双束系统制备与样品表面平行的TEM样品的方法（“V-cut”）,并与传统的FIB制备TEM样品的方法（“U-cut”）进行比较,分析了该方法对实现某些特殊研究目的的独特性和适用性.     

Local thickness and composition analysis of TEM lamellae in the FIB

High-resolution TEM image quality is greatly impacted by the thickness of the TEM sample (lamella) and the presence of any surface damage layer created during FIB–SEM sample preparation. Here we present a new technique that enables measurement of the local thickness and composition of TEM lamellae and discuss its application to the failure analysis of semiconductor devices. The local thickness in different device regions is accurately measured based on the X-ray emission excited by the electron beam in the FIB–SEM. Examples using this method to guide FIB–SEM preparation of high quality lamellae and to characterise redeposition are shown for Si and III–V semiconductor devices.     

FIB与PEM联用在半导体器件失效分析中的应用

在半导体器件的失效分析中,缺陷定位是必不可少的重要环节.光发射显微镜(PEM)是IC失效定位中最有效的工具之一.PEM利用了IC器件缺陷在一定条件下的发光现象,迅速定位缺陷.而聚焦等离子束(FIB)的定点切割和沉积技术在亚微米级半导体工艺失效分析中扮演着越来越重要的作用.介绍了一种联合使用FIB和PEM进行亚微米级缺陷定位的新方法,使得一些单独使用PEM无法完成缺陷定位的案例得以成功解决.     

Doping of TIPS-pentacene via Focused Ion Beam (FIB) exposure

We report on the influence of Focused Ion Beam (FIB) exposure on TIPS-pentacene layers which are often used in solution-processable organic field-effect transistors (OFETs) and in many cases yield a field-effect mobility in the order of 1 cm²/V s. We exposed TIPS-pentacene layers to a Ga⁺ ion beam and measured the device characteristics of OFETs. We observed a strong influence of the FIB on J–V characteristics of TIPS-pentacene-based devices and determined an increase in the OFET mobility and on–off ratio and a decrease of the threshold voltage. To further investigate the underlying process we analyzed FIB-exposed and unexposed TIPS-pentacene samples via X-ray Photoelectron Spectroscopy (XPS). Exposed samples show a clear Ga XPS signature and the C1s peak shifts about 400 meV towards smaller binding energies which is an indicator for a Fermi energy shift closer to the valence states and hence p-doping of TIPS-pentacene. With Scanning Kelvin Probe Microscopy (SKPM) we could clearly distinguish FIB exposed areas from the unexposed areas. For exposed areas the work function increases about 200 meV which is consistent with XPS measurements and again displays that the implanted Ga⁺ ions serve as p-dopants. Furthermore we took SKPM measurements on operating OFETs and could investigate a dramatic change in local conductance on FIB exposed areas. This demonstrates a novel way of nanopatterning conductive paths in organic semiconductors.