GaAs／GaAlAs量子阱红外探测器实用性探讨

通过长波ＧａＡｓ／ＧａＡｌＡｓ量子阱红外探测器线列在红外像机上的应用演示及其成像效果与传统ＨｇＣｄＴｅ探测器的比较，直接地显示了ＧａＡｓ／ＧａＡｌＡｓ量子阱红外探测器在红外焦平面应用领域具有很强的竞争力。     

AlGaAs／InGaAs／GaAs异质结构中扩散噪声和扩散系数的蒙特卡罗研究

本文用蒙特卡罗法研究了ＡｌＧａＡｓ／ＩｎＧａＡｓ／ＧａＡｓ异质结构中二维电子气的扩散噪声和扩散系数．同ＡｌＧａＡｓ／ＧａＡｓ异质结构的情况一样，平行速度相关函数呈现振荡，但不同的是振幅随电子密度变化很小．另外，振幅在ＩｎＧａＡｓ层厚度增加时下降．用单个电子的相关函数和一组电子的位移方差两种不同方法计算了扩散系数．     

高性能GaAs／AlGaAs量子阱红外探测器的研制

ＧａＡｓ／ＡｌＧａＡｓ多量了阱结构的红外探测器是近几年出现的一种新型红外探测器。本文对基基本原理作了介绍。并报导了最新研制成果；Ｄλ＝１．４２×１０＾１１ｃｍＨｚ１／２Ｗ＾－１＝Ｒλ＝２．３２×１０＾６Ｖ／Ｗ，峰值响应为８．５μｍ的高性能ＧａＡｓ／ＡｌＧａＡｓ量子阱红外探测器。     

GaAs／GaAlAs中红外量子阱探测器和双色量子阱红外探测器

本文报道我们在国内率先研制的ＧａＡｓ／ＧａＡｌＡｓ中红外（３～５μｍ）量子阱探测器和双色量子阱红外探测器的制备和性能．ＧａＡｓ／ＧａＡｌＡｓ中红外量子阱探测器是光伏型，探测峰值波长为５．３μｍ，８５Ｋ下的５００Ｋ黑体探测率为３e９ｃｍ·Ｈｚ１／２／Ｗ，峰值探测率达到５×１０１１ｃｍ·Ｈｚ１／２／Ｗ，阻抗为５０ＭΩ．ＧａＡｓ／ＧａＡｌＡｓ双色量子阱红外探测器是偏压控制型的两端器件，在零偏压下该探测器仅在３～５μｍ波段有响应，响应峰值波长为５．３μｍ，８５Ｋ温度下５００Ｋ黑体探测率为３e９ｃｍ     

台湾电信用光电器件的研究现状

本文介绍了台湾用一塌信的光电器件近期的开发两头及研究成果。其中包括高性能１．５５μｍ复耦合ＩｎＧａＡｓＰ－ＩｎＰ分布反馈和１．３μｍ无致冷ＡｌＩｎＧａＡｓ－ＩｎＰ激光器，半绝缘衬底的ＩｎＧａＡｓ－ＩｎＰｐ－ｉ－ｎ光探测器，０．９８μｍＩｎＧａＡｓ－ＧｓＡｓ－ＩｎＧａＰ泵浦激光器以及１２信道的激光器和探测阵列。     

128元线列GaAs／AlGaAs量子阱红外探测器研究及与开关读出电路联试的初探

１２８元线列ＧａＡｓ／ＡｌＧａＡｓ量子阱红外探测器研究及与开关读出电路联试的初探尹洁，吴人齐，项金真，韩建忠，赵建忠（华北光电技术研究所北京１０００１５）陈正豪，崔大复，周均铭（中科院物理研究所北京１０００８１）ＧａＡｓ／ＡｌＧａＡｓ多量子阱红外探测...     

新一代长波长红外探测器

文章旨在介绍适应于长波红外焦平面阵列技术发展的红外探测器，由于篇幅的关系，本文着重评述ＩｎＡｓＳｂ应变层超晶格红外探测器和ＧａＡｓ／ＧａＡｌＡｓ多量子阱红外探测器的特点、器件结构、主要制作工艺，性能参数，以及急需要解决的一些问题。     

HBT电压控制振荡器的相位噪声

研究了电压控制振荡器（ＶＣＯ）的相位噪声与构成该振荡器的有源器件的低频噪声的关系,测试了ＳｉＢＪＴ、ＡｌＧａＡｓ／ＧａＡｓ ＨＢＴ和ＧａＩｎＰ／ＧａＡｓ ＨＢＴ的低频噪声,并分析了各自低频噪声产生的原因,提出了选择ＧａＩｎＰ／ＧａＡｓ ＨＢＴ ＶＣＯ来实现微波固体振荡器低相位噪声化这一发展方向。     

GaAs／AlGaAs多量子阱红外探测器研究

ＧａＡｓ／ＡｌＧａＡｓ多量子阱红外探测器研究沈学础，陆卫（上海技术物理研究所上海２０００８３）本文所作的研究包括：１．基本物理机制研究在理论上研究了子带间跃迁的基本物理过程，并提出了ｎ型非（１００）方向生长的ＧａＡｓ／ＡｌＧａＡｓ材料存在的正入射条件...     

GaAs／AlGaAs多量子阱器件均匀性研究

从几个方面研究了ＧａＡｓ／ＡｌＧａＡｓ多量子阱红外探测器的均匀性,找到了影响其均匀性的几个因素,今后的工作奠定了基础。     

Characteristics of integrated QWIP-HBT-LED up-converter

In this paper, we evaluate characteristics of a novel device based on the integration of a quantum well IR photodetector (QWIP), a heterostructure bipolar transistor (HBT), and a light-emitting diode (LED) for up-conversion of middle infrared (IR) into near IR (visible) radiation. Its operation is associated with intersubband absorption of middle IR radiation in the QWIP, amplification of the QWIP output electric signal in the HBT, and emission of near IR or visible radiation from the LED fed by the current injected from the HBT. This device allows us to use Si sensors for IR and thermal imaging and significantly surpass the one based on integration of a QWIP and a LED. If the HBT current gain is high enough, the total noise of the IR camera with the up-converter can be comparable to that of the QWIP electrically connected to a read-out circuit. The major sources of the excess noise are shot noise and 1/f noise of the HBT and shot noise of the charge coupled device (CCD) sensor. The criteria to reduce their influence are established. The QWIP-HBT-LED up-converter becomes most advantageous for megapixel focal plane arrays and high read-out rate cameras.     

低噪声GaAs/A1GaAs多量子阱红外探测器

提出了一种新结构的多量子阱红外探测器（QWIP）。在常规多量子阱结构的基础上加入P型欧姆接触层,实现以小的隧道电流代替原有的大的补偿电流,从而减小器件的暗电流实现低噪声器件。对器件暗电流的理论计算与实验曲线符合的很好。制备了新结构器件,其噪声只是同结构的常规QWIP的1／3。     

GaAs/AlGaAs quantum well infrared photodetector with low noise

A novel kind of multi-quantum well infrared photodetector（QWlP） is presented. In the new structure device,a p-type contact layer has been grown on the top of the conventional structure of QWlP,then a small tunneling current is instead of the large compensatory current,which made the device low dark current and low noise characteristics. The measured result of dark current is consistent with the calculated result, and the noise of the new structure QWIP is decreased to one third of the conventional QWlP.     

Long-wavelength 640×486 GaAs-AlGaAs quantum well infraredphotodetector snap-shot camera

A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature     

Long-wavelength 256×256 GaAs/AlGaAs quantum well infraredphotodetector (QWIP) palm-size camera

A 9 μm cutoff 256×256 palm-size quantum well infrared photodetector (QWIP) camera weighing only 2.5 lbs, and using 5.5 W of power has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NEΔT) of 23 mK has been achieved. It is well known that QWIP has very low 1/f noise, high operability, and uniformity. As a result, this camera uses a prerecorded nonuniformity correction table (i.e., gains and offsets) stored in its read-only-memory during operation, which enabled the miniaturization of this camera. In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NEΔT, MRDT, uniformity, and operability     

640×512偏振长波量子阱红外焦平面探测器研制

介绍了大面阵偏振长波量子阱红外焦平面探测器组件的研制进展。在640512规模20 m中心距面阵上,偏振焦平面采用了22子单元设计,子单元中每个像元分别刻蚀0、90、45以及135方向的一维线性光栅,来获得入射光不同偏振角度的信息。突破了长波量子阱材料外延和器件制备等关键技术,制备出面阵探测器芯片,实现了偏振长波红外探测的单片集成,配上杜瓦和制冷机,研制出噪声等效温差优于30 mK的长波偏振640512量子阱探测器组件。     

9-μm cutoff 256×256 GaAs/AlxGa1-xAsquantum well infrared photodetector hand-held camera

A 9-μm cutoff 256×256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NEΔT) of 26 mK has been achieved. In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEΔT, minimum resolvable temperature (MRTD), uniformity, and operability     

New dark current suppression CMOS readout circuit with novel CDS structure for large format QWIP FPA

A new Dark Current Suppression (DCS) CMOS readout circuits for large format Quantum-Well-Infrared Photo-detector (QWIP) Focal-Plane-Array (FPA) with novel CorrelatedDouble-Sampling (CDS) structure based on dynamic source-follower are proposed, which can overcome the drawbacks of the present techniques, such as sensitive to the non-uniformity of the QWIP materials, poor readout noise features, low frame frequency, limited injection efficiency and dynamic range, etc. The dummy is adopted to realize dark current suppression, while the cascode current mirror (with current ratio of 1:10) can increase charge sensitivity and reduce integration time. Through the novel CDS structure, the output waveform is boxcar, and the frame frequency is increased. Simulation results demonstrate that, in high background sense, the proposed DCS circuit can suppress the dark current, achieve good readout performance, such as low power consumption, high charge sensitivity, high resolution, large dynamic range, and insensitive to the non-uniformity of the QWIP materials.     

Large Format AlInAs–InGaAs Quantum-Well Infrared Photodetector Focal Plane Array For Midwavelength Infrared Thermal Imaging

We report the first large format (640times512) AlInAs-InGaAs quantum-well infrared photodetector (QWIP) focal plane array (FPA), and investigate the characteristics of AlInAs-InGaAs QWIPs both at pixel and FPA level. The measurements on the detectors fabricated with molecular beam epitaxy grown epilayer structure including 30 InGaAs quantum wells (26 Aring thick, N_D=2times10¹⁸ cm^-3) yielded very promising characteristics. The detectors with lambda_p=4.2 mum and Deltalambda/lambda_p=25% displayed a background-limited performance temperature as high as 105 K with f/2 aperture. The noise equivalent temperature difference of the FPA is as low as 23 mK (f/1.5) at 105-K sensor temperature with 99.6% operability. These results are comparable to the best results reported for AlGaAs-InGaAs midwavelength infrared QWIPs showing the promise of this material system for completely lattice-matched multiband QWIP FPAs.     

Demonstration and Performance Assessment of Large Format InP–InGaAsP Quantum-Well Infrared Photodetector Focal Plane Array

There have been various studies showing that InP-InGaAs quantum-well infrared photodetectors (QWIPs) are potential alternatives to AlGaAs-GaAs QWIPs in the long wavelength infrared (LWIR) band, especially for applications requiring high responsivity. Being on InP substrate, this material system also offers lattice matched mid-wavelength infrared (MWIR)/LWIR dual band QWIP stack when it is used with the AlInAs-InGaAs system. It is desirable to extend the cut-off wavelength of InP based LWIR QWIPs to , which can be accomplished by replacing the QW material with InGaAsP. In this paper, we report the first InP-InGaAsP QWIP focal plane array (FPA). The 640 512 FPA displayed remarkably low noise equivalent temperature difference (NETD) with very short integration times (46 mK at 66 K with and f/1.5 optics). The results show that these QWIPs can be operated with high responsivity (1 A/W) while offering bias adjustable gain in a wide range where the detectivity is almost constant at a reasonably high level.