Structural Phase Transition Effect on Resistive Switching Behavior of MoS2‐Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices

The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS₂) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS₂ is introduced into the 2H‐MoS₂ nanosheets by two‐step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write‐once read‐many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H‐MoS₂‐polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H‐MoS₂‐PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS₂ nanosheets plays an important role on the resistive switching behaviors of the MoS₂‐based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets.     

Multilayer Stacked Low‐Temperature‐Reduced Graphene Oxide Films: Preparation,Characterization, and Application in Polymer Memory Devices

Highly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 °C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet resistance (≈160–500 Ω sq⁻¹) and higher conductivity (26 S cm⁻¹) as compared to other rGO films obtained by commonly used chemical reduction methods, is fully characterized. The effective reduction can be attributed to the large “effective reduction depth” in the GO films (1.46 µm) and the high C1s/O1s ratio (8.04). By using the above approach, rGO films with a tunable thickness and sheet resistance are achieved. The obtained rGO films are used as electrodes in polymer memory devices, in a configuration of rGO/poly(3‐hexylthiophene) (P3HT):phenyl‐C61‐butyric acid methyl ester (PCBM)/Al, which exhibit an excellent write‐once‐read‐many‐times effect and a high ON/OFF current ratio of 10⁶.     

Fabrication of Flexible MoS2 Thin‐Film Transistor Arrays for Practical Gas‐Sensing Applications

By combining two kinds of solution‐processable two‐dimensional materials, a flexible transistor array is fabricated in which MoS₂ thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm‐long MoS₂ channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS₂ thin film with Pt nanoparticles further increases the sensitivity by up to ～3 times. The successful incorporation of a MoS₂ thin‐film into the electronic sensor promises its potential application in various electronic devices.     

Preparation of MoS2‐Coated Three‐Dimensional Graphene Networks for High‐Performance Anode Material in Lithium‐Ion Batteries

A novel composite, MoS₂‐coated three‐dimensional graphene network (3DGN), referred to as MoS₂/3DGN, is synthesized by a facile CVD method. The 3DGN, composed of interconnected graphene sheets, not only serves as template for the deposition of MoS₂, but also provides good electrical contact between the current collector and deposited MoS₂. As a proof of concept, the MoS₂/3DGN composite, used as an anode material for lithium‐ion batteries, shows excellent electrochemical performance, which exhibits reversible capacities of 877 and 665 mAh g^?1 during the 50^th cycle at current densities of 100 and 500 mA g^?1, respectively, indicating its good cycling performance. Furthermore, the MoS₂/3DGN composite also shows excellent high‐current‐density performance, e.g., depicts a 10^th‐cycle capacity of 466 mAh g^?1 at a high current density of 4 A g^?1.     

Conjugated‐Polyelectrolyte‐Functionalized Reduced Graphene Oxide with Excellent Solubility and Stability in Polar Solvents

Conjugated‐polyelectrolyte (CPE)‐functionalized reduced graphene oxide (rGO) sheets are synthesized for the first time by taking advantage of a specially designed CPE, PFVSO₃, with a planar backbone and charged sulfonate and oligo(ethylene glycol) side chains to assist the hydrazine‐mediated reduction of graphene oxide (GO) in aqueous solution. The resulting CPE‐functionalized rGO (PFVSO₃‐rGO) shows excellent solubility and stability in a variety of polar solvents, including water, ethanol, methanol, dimethyl sulfoxide, and dimethyl formamide. The morphology of PFVSO₃‐rGO is studied by atomic force microscopy, X‐ray diffraction, and transmission electron microscopy, which reveal a sandwich‐like nanostructure. Within this nanostructure, the backbones of PFVSO₃ stack onto the basal plane of rGO sheets via strong π–π interactions, while the charged hydrophilic side chains of PFVSO₃ prevent the rGO sheets from aggregating via electrostatic and steric repulsions, thus leading to the solubility and stability of PFVSO₃‐rGO in polar solvents. Optoelectronic studies show that the presence of PFVSO₃ within rGO induces photoinduced charge transfer and p‐doping of rGO. As a result, the electrical conductivity of PFVSO₃‐rGO is not only much better than that of GO, but also than that of the unmodified rGO.     

Chemically Integrated Inorganic‐Graphene Two‐Dimensional Hybrid Materials for Flexible Energy Storage Devices

State‐of‐the‐art energy storage devices are capable of delivering reasonably high energy density (lithium ion batteries) or high power density (supercapacitors). There is an increasing need for these power sources with not only superior electrochemical performance, but also exceptional flexibility. Graphene has come on to the scene and advancements are being made in integration of various electrochemically active compounds onto graphene or its derivatives so as to utilize their flexibility. Many innovative synthesis techniques have led to novel graphene‐based hybrid two‐dimensional nanostructures. Here, the chemically integrated inorganic‐graphene hybrid two‐dimensional materials and their applications for energy storage devices are examined. First, the synthesis and characterization of different kinds of inorganic‐graphene hybrid nanostructures are summarized, and then the most relevant applications of inorganic‐graphene hybrid materials in flexible energy storage devices are reviewed. The general design rules of using graphene‐based hybrid 2D materials for energy storage devices and their current limitations and future potential to advance energy storage technologies are also discussed.     

Non‐Volatile ReRAM Devices Based on Self‐Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

2D nanomaterials have been actively utilized in non‐volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D‐stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re‐writable, bistable, transparent, and flexible solution‐processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single‐ or multi‐component‐based multilayers composed of positively charged GO (N‐GO(+) or NS‐GO(+)) with/without negatively charged GO(‐) using layer‐by‐layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi‐component active layer Au/[N‐GO(+)/GO(‐)]_n/Al/PES shows higher ON/OFF ratio of ≈10⁵ with switching voltage of ?1.9 V and higher retention stability (≈10⁴ s), whereas the device based on single component (Au/[N‐GO(+)]_n/Al/PES) shows ≈10³ ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi‐component‐based device are attributed to a higher coating surface roughness. The Au/[N‐GO(+)/GO(–)]_n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈10⁹) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO‐based solutions. It is found that the devices containing MnO₂ in the dielectric layer do not improve the ReRAM performance.