一种基于HP EESOF软件的IMPATT二极管非线性电路模型参数的提取方法

通过对雪崩二极管非线性电路模型参数数学表达式的分析，利用HPEESOF软件进行电路模型的计算机模拟，计算出雪崩管在非线性状态下的器件阻抗，从而为雪崩管振荡器的设计提供了重要的理论依据。     

Power-noise characterization of phase-locked IMPATT Oscillators

IMPATT diode characterization on the basis of output power and the corresponding FM noise figure over a range of operating conditions is presented. The characterization consists of families of power noise curves obtained for a phase-locked IMPATT oscillator where the supply current, load conductance, and the operating frequency are parameters. It is shown that the maximum output power and minimum FM noise are not achieved concurrently. In particular FM transmitter application, it is shown that the best performance for each type of diode was obtained when operated at less than maximum power (and at reduced efficiency) where the system benefits from the attending lower noise. Better system performance, this application, was obtained with the GaAs IMPATT diode. The power-noise characterization defines the optimum operating conditions for an IMPATT diode and provides a valid basis for the comparison of diodes for specific applications.     

Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency.     

Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN

This paper presents the simulation results of DC,small-signal and noise properties of GaP based Double Drift Region( DDR) Impact Avalanche Transit Time( IMPATT) diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP,GaAs,Si and GaN( wurtzite,wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage( V_B) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4. 9 × 10~9 W/m~2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN( wz) displays large values of break down voltage,efficiency and power density as compared to Si,GaAs and GaP IMPATTs.     

High frequency noise properties of a double avalanche region (DAR) IMPATT diode

The high frequency noise properties of a double avalanche region (DAR) IMPATT diode consisting of two avalanche layers interspaced by a drift layer have been studied. In view of the fact that SDR IMPATT diode shows a high value of noise figure, one may think that the presence of two avalanche layers in DAR IMPATT diode may lead to a noise figure of the order of 2 or 3 times larger than that of the SDR (or SAR) IMPATT. However, from the study, it has been observed that the DAR IMPATT has the same order of noise as that of SDR IMPATT under operating condition. Since the DAR IMPATT diode with unequal avalanche layer width can be used as microwave oscillator with minimum coupling between the harmonically related frequencies [1], the device may be very useful in the microwave frequency range.     

High-power pulsed beam-lead IMPATT diodes for millimetre waves

IMPATT diodes with technologically integrated beam-leads were fabricated. Since no diode bonding is required, a total diode thickness of less than 2 ?m can be realised reproducibly. With optimum device packages, peak pulse output powers of more than 10 W at 70 GHz have been achieved from silicon single-drift IMPATT diodes.     

Ion-implanted planar-mesa IMPATT diodes for millimeter wavelengths

A process has been developed that combines ion-implantation doping with planar and mesa-etching techniques for the fabrication of fully passivated millimeter-wave IMPATT diodes. The device geometry consists of an IMPATT diode surrounded by a two-layer annular region of passivation: one layer of high-resistivity semiconductor and the other of thick insulator material. Devices constructed with this new geometry have sufficient mechanical strength to allow direct mounting into microwave circuits without the use of an insulator standoff and metal ribbon package arrangement. A simple model of the diode-circuit interaction is used to estimate the degradation in microwave performance as a function of the passivation parasitics. These results are compared to a diode with no parasitic losses. Based on the I²-PLASA process, a fully passivated silicon IMPATT diode was fabricated for V-band (50-75-GHz) operation. Degradation factors of approximately 50 percent are predicted for the present devices. A continuous-wave output power of 100 mW was obtained at 62 GHz from an I²-PLASA IMPATT diode with an implanted p⁺-n-n⁺doping profile. Mechanical tuning characteristics of these devices were found to be more broad-band than standard packaged diodes. The measured AM and FM noise spectra close to the carrier were representative of standard single-drift silicon millimeter-wave IMPATT diodes.     

3mm波段集成振荡器研究

描述了一种3mm波段集成振荡器,该振荡器由雪崩二极管、微带谐振器、阻抗匹配器、鳍线过渡组成.通过对3mm波段集成振荡器进行理论分析和实验研究,最终在国内首次采用3mm连续波雪崩二极管成功研制出微带集成振荡器,工作频率为94.78GHz,输出功率大于7mW.     

双漂移崩越二极管的渡越角分析

在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下,推导了双漂移崩越二极管的渡越角表达式.用于计算35GHz崩越管渡越角,与计算机模拟结果符合良好.     

Characterization of IMPATT diodes at millimeter-wave frequencies

In order to evaluate the quality of a microwave device and to design a suitable circuit for it, the device must be characterized in terms of an equivalent circuit. At low microwave frequencies L through X bands, devices can be characterized in a relatively simple manner in conjunction with a coaxial transmission line network analyzer. At higher frequencies, such as millimeter-wave frequencies, however, the characterization must be carried out in a waveguide. This paper presents a technique for characterizing an IMPATT diode mounted in a waveguide and the associated circuit parasitics at millimeter-wave frequencies. The passive and active device parameters and the circuit parasitics, which have increased effects particularly at millimeter-wave frequencies, are evaluated by means of a computer-aided iterative curve-fitting method from the measured variation of the input impedance (VSWR) as a function of position of a movable short placed behind the device. The accuracy of the technique and the computer program are first checked by comparing the characteristics of anX-band IMPATT diode measured by the present technique and those measured by the network analyzer method. The characterization of a millimeter-wave IMPATT diode is then presented. A technique to achieve the stabilization required for the measurement of active parameters of the diode is also described. Comparison of the performance of an IMPATT diode amplifier calculated from the measured diode characteristics with the experimentally observed amplifier performance is then presented. It is shown that the device characterization technique can effectively be used for the analysis and design of a millimeter-wave circuit in which the device is used.     

8毫米硅连续波崩越二极管

叙述8毫米硅连续波崩越二极管的设计和制造,在频率35 GHz附近,金集成热沉的双漂移崩越管获得400～800mW连续输出功率,效率5％～10％,结温200～250℃。     

State-Space Analysis of General IMPATT Diode Small-Signal Lumped Models

The development of a lumped model for small-signal carrier-field interactions in an IMPATT diode results in a set of state equations. Using state-space analysis techniques, the equations are solved for the small-signal impedance of a general IMPATT diode as a function of dc bias current and frequency. Read, p-n, and p-i-n diodes are studied using realistic values for saturation carrier velocities and carrier-ionization rates. Curves indicating the influence of diode physical properties on the small-signal impedance are presented. By combining state equations describing the behavior of the external microwave circuit with the diode state equations, the small-signal oscillation frequency and threshold dc bias current of a coaxial IMPATT oscillator are determined.     

Large-Signal Equivalent Circuits of Avalanche Transit-Time Devices

A large-signal analysis for IMPATT diodes is derived, which allows carrier multiplication by impact ionization to occur at every point in the diode. Therefore, the operating characteristics of IMPATT diodes with a wide range of realistic doping profiles can be investigated. For a given operating frequency, RF voltage, dc bias current, and doping profile, the admittance, power output, efficiency, bias voltage of a diode can be obtained. An equivalent circuit the diode package, microwave circuit mount and diode, is obtained experimentally. Using this circuit, the admittance of the diode is measured by a reflection-type circuit and an oscillator circuit as a function of the RF voltage, dc bias current, and frequency.     

Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators

This paper describes circuit, packaging, and device techniques used in the development of tunable CW IMPATT diode oscillators in the 170-260 GHz range. A quartz standoff package with optimum values for parasitics has been developed. A tuning range of nearly 30 GHz has been achieved with an IMPATT diode in such a package.     

Double-velocity IMPATT diodes

A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode can have significantly higher dc-to-microwave-power conversion efficiencies than conventional Read IMPATT diodes.     

Matching of active millimetre-wave slot-line antennas

The matching of a radiating, resonant structure to an active millimetre-wave device is investigated. As an active device, an IMPATT diode is considered to be matched to a planar slot-line structure. An analytical IMPATT diode model and an equivalent circuit of the slot line are used to calculate possible oscillation frequencies and large-signal modulation parameters of the diode. In the case of matching the output power is predicted. The results are in satisfactory agreement with experimental data and suggest a diode design with shorted drift regions and reduced diode area for optimum impedance matching.<>     

微波半导体器件的计算机模拟

本文介绍半导体器件计算机模拟的物理模型和计算方法.以分析微波崩越二极管的大信号时间域模拟说明进行微波半导体计算机模拟的原理和过程,并给出对工作频率为40千兆赫的双漂移砷化镓崩越二极管进行计算机模拟的计算结果.     

Oscillation Characteristics of Millimeter-Wave IMPATT Diodes Mounted in Low-Impedance Waveguide Mounts (Short Papers)

Experiments on dc-bias-current-tuned IMPATT diodes mounted in low-impedance waveguide mounts are described. Broad-band bias-current-tuned IMPATT oscillators were obtained which cover almost the full waveguide band; 20-, 24-, and 18-GHz tuning bandwidths were obtained with the R-500, R-620, and R-740 waveguide, respectively. From experiments it became evident that there are some suitable relations for broad-band bias tuning among the diode breakdown voltage, the oscillation frequency, and the waveguide dimension. The results are very useful for the design of the circuit and diode parameter for broad-band millimeterwave IMPATT sweep oscillators. The feasibility of applying bias-current-tuned IMPATT oscillators to a broad-band measuring instrument is expected.     

Small signal characterization of IMPATT diodes†

A precise method for the characterization of an encapsulated microwave diode, using an iterative computer procedure, is described. An accurate equivalent circuit for mount and package is obtained, and used in the estimation of the small signal properties of an IMPATT diode, from slotted-line measurements. Consistent diode junction parameters are obtained for various mount configurations. Agreement is obtained between the measured and predicted oscillation frequency of a radial-line cavity IMPATT oscillator, to within experimental error.     

Intrinsic AM noise in singly tuned IMPATT diode oscillators

Analytical relationships are derived for the ratio of the intrinsic AM to FM noise, and for the intrinsic AM noise of IMPATT diode oscillators. The theory is confirmed experimentally for a silicon n⁺-p diode and an n-gallium-arsenide Schottky barrier diode operating at low and intermediate signal levels.