An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode

Ni-germanosilicided Schottky barrier diode has been fabricated by annealing the deposited Ni film on strained-Si and characterized electrically in the temperature range of 125 K–300 K. The chemical phases and morphology of the germanosilicided films were studied by using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). The Schottky barrier height (_b), ideality factor (n) and interface state density (D_it) have been determined from the current–voltage (I–V) and capacitance–voltage (C–V) characteristics. The current–voltage characteristics have also been simulated using SEMICAD device simulator to model the Schottky junction. An interfacial layer and a series resistance were included in the diode model to achieve a better agreement with the experimental data. It has been found that the barrier height values extracted from the I–V and C–V characteristics are different, indicating the existence of an in-homogeneous Schottky interface. Results are also compared with bulk-Si Schottky diode processed in the same run. The variation of electrical properties between the strained- and bulk-Si Schottky diodes has been attributed to the presence of out-diffused Ge at the interface.     

Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

An electrical characterization comparative analysis between Al/HfO₂/n-Si and Al/Hf-Si-O/n-Si samples has been carried out. Hafnium-based dielectric films have been grown by means of atomic layer deposition (ALD). Interface quality have been determined by using capacitance–voltage (C–V), deep level transient spectroscopy (DLTS) and conductance transient (G-t) techniques. Our results show that silicate films exhibit less flat-band voltage shift and hysteresis effect, and so lower disordered induced gap states (DIGS) density than oxide films, but interfacial state density is greater in Hf–Si–O than in HfO₂. Moreover, a post-deposition annealing in vacuum under N₂ flow for 1 min, at temperatures between 600 and 730 °C diminishes interfacial state density of Hf–Si–O films to values measured in HfO₂ films, without degrade the interface quality in terms of DIGS.     

LPCVD-silicon oxynitride films: interface properties

The interface properties of silicon oxynitride films prepared by low-pressure chemical vapor deposition at a temperature of 860 ° C have been investigated analyzing the capacitance–voltage and ac conductance–voltage characteristics of the metal-SiO_xN_y-silicon capacitors. Consistent results for the interface trap density have been obtained from single frequency ac conductance technique, approximation C–V method and from the interface density spectrum. The post-deposition annealing results in an improvement of the interface charge properties. The contribution of the interface traps to the estimation of the fixed oxide charge has been discussed which is important for the threshold voltage control in MOS devices.     

Single transistor technique for interface trap density measurement in irradiated MOS devices

The effect of interface trap charge variation during measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface trap density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by I_d(V_g) curve distortion due to interface trapped charge variation during measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface trap density vs total dose are shown.     

Self‐consistent electrical parameter extraction from bias dependent spectral response measurements of III‐V multi‐junction solar cells

Spectral response of multi‐junction solar cell is complicated because of the interplay between external measurement conditions such as bias light intensity, monochromatic light intensity, bias voltage, and intrinsic electrical properties of series interconnected subcells. In this paper, we report an experimental study on the bias voltage‐dependent spectral response (SR) for multi‐junction solar cell. A self‐consistent iteration loop was developed from a nonlinear least square Powell hybrid algorithm that was used for curve fitting the experimental SR versus bias voltage data of each subcell. We demonstrated for the first time that this approach enabled us to derive the electrical parameters such as dark saturation currents (J₀), shunt resistance (R_sh), series resistance (R_s), and spectra response (J_photo) for each subcell of a Ga_0.99In_0.01As/Ge dual junction solar cell with stable convergence. The accuracies of the fitting results were confirmed by the agreement between the J–V curves calculated on the basis of these parameters and the experimental J–V curve of multi‐junction solar cell measured under AM1.5 and 1 sun condition. Copyright © 2013 John Wiley & Sons, Ltd.     

Determination of trap cross-section in a-Si:H p-i-n diodes parameters using simulation and parameter extraction

Modeling the current density–voltage (J–V) curve of a-Si:H p-i-n diodes requires a group of input physical parameters that have to be previously determined. Some of them can be determined directly from experiment, while others, as the trap cross-section, have to be indirectly determined or assigned. We present a simple procedure to estimate trap cross-section using computer simulation and parameter extraction. The experimental J–V forward characteristic of the p-i-n diode, dark and illuminated, is used to determine the ideality factor n and the short circuit current density J_SC. The charged trap cross-section and its relation to the neutral trap cross-section are determined by fitting to tabulated and graphical results from simulation. Determined values of trap cross-section are used to simulate the reverse current of diodes under illumination and results compared with experimental curves.     

Highly Efficient Ternary Solar Cells with Efficient Förster Resonance Energy Transfer for Simultaneously Enhanced Photovoltaic Parameters

Introducing a third component into organic bulk heterojunction solar cells has become an effective strategy to improve photovoltaic performance. Meanwhile, the rapid development of non-fullerene acceptors (NFAs) has pushed the power conversion efficiency (PCE) of organic solar cells (OSCs) to a higher standard. Herein, a series of fullerene-free ternary solar cells are fabricated based on a wide bandgap acceptor, IDTT-M, together with a wide bandgap donor polymer PM6 and a narrow bandgap NFA Y6. Insights from the morphological and electronic characterizations reveal that IDTT-M has been incorporated into Y6 domains without disrupting its molecular packing and sacrificing its electron mobility and work synergistically with Y6 to regulate the packing pattern of PM6, leading to enhanced hole mobility and suppressed recombination. IDTT-M further functions as an energy-level mediator that increases open-circuit voltage (V_OC) in ternary devices. In addition, efficient Förster resonance energy transfer (FRET) between IDTT-M and Y6 provides a non-radiative pathway for facilitating exciton dissociation and charge collection. As a result, the optimized ternary device features a significantly improved PCE up to 16.63% with simultaneously enhanced short-circuit current (J_SC), V_OC, and fill factor (FF).     

dc-Conduction mechanism in lanthanum–manganese oxide films grown on p-Si substrate

Thin films of (La–Mn) double oxide were prepared on p-Si substrates for electrical investigations. The samples have been characterised by X-ray fluorescence (XRF) and X-ray diffraction (XRD) methods. The XRF spectrum was used to determine the weight fraction ratio of Mn to La in the prepared samples. The XRD study shows the formation of grains of LaMnO₃ compound through a solid-state reaction for annealing at 800 °C. Samples used to study the electrical characteristics of the prepared films were constructed in form of a metal–oxide–Si MOS structures. Those MOS structures were characterised by the measuring their capacitance as a function of gate voltage C(V_g) in order to determine the oxide charge density Q_ox, the surface density of states D_it at the oxide/Si interface, and to extract the oxide voltage in terms of gate voltage. The extracted dielectric constant of the double oxide film is lower than that of pure La₂O₃ film and larger than that of pure Mn₂O₃ film, but the formation of LaMnO₃ grains by a solid-state reaction at 800 °C increases the relative permittivity to 11.5. These experimental conclusions might be useful to be used in the field of Si-oxide alternative technique. The leakage dc current density vs. oxide field J(E_ox) relationship for crystalline films follow the mechanism of Richardson–Schottky (RS), from which the field-lowering coefficient and the dynamic relative permittivity were determined. Nevertheless, the leakage current density measured in a temperature range of (293–363 K) was not controlled by the RS mechanism. It was observed that the temperature dependence of the leakage current in crystalline (La–Mn) oxide insulating films has metallic-like temperature behaviour, which might be important in the technical applications.     

Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p‐i‐n silicon solar cells

The photovoltaic effect of the silicon (Si)/silicon carbide (SiC) quantum dot super lattice (QDSL) and multi‐quantum well (QW) strucutres is presented based on numerical simulation and experimental studies. The QDSL and QW structures act as an intermediate layer in a p‐i‐n Si solar cell. The QDSL consists of a stack of four 4‐nm Si nano disks and 2‐nm SiC barrier layers embedded in a SiC matrix fabricated with a top‐down etching process. The Si nano disks were observed with bright field‐scanning transmission electron microscopy. The simulation results based on the 3D finite element method confirmed that the quantum effect on the band structure for the QDSL and QW structures was different and had different effects on solar cell operation. The effect of vertical wave‐function coupling to form a miniband in the QDSL was observed based on the solar‐cell performance, showing a dramatic photovoltaic response in generating a high photocurrent density J_sc of 29.24 mA/cm², open circuit voltage V_oc of 0.51 V, fill factor FF of 0.74, and efficiency η of 11.07% with respect to a i‐QW solar cell with J_sc of 25.27 mA/cm², V_oc of 0.49 V, FF of 0.69, and η of 8.61% and an i‐Si solar cell with J_sc of 27.63 mA/cm², V_oc of 0.55 V, FF of 0.61, and η of 10.00%. A wide range of photo‐carrier transports by the QD arrays in the QDSL solar cell is possible in the internal quantum efficiency spectra with respect to the internal quantum efficiency of the i‐QW solar cell. Copyright © 2015 John Wiley & Sons, Ltd.     

Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p-i-n solar cellL. Ayat1, A.F. Bouhdjar2, AF. Meftah2*, N. Sengouga2, AM. Meftah2

Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer (i-layer). We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, V_oc, the short circuit current density, J_sc, the fill factor, FF, and the maximum power density, P_max, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that V_oc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.     

Explanation of high solar cell diode factors by nonuniform contact resistance

The current density–voltage ( J – V ) curve that characterises the performance of a solar cell is often extra rounded, resulting in reduced efficiency. When fitting to the standard one‐dimensional models, it is often found that the rounding cannot be fitted by the series resistance only. In these cases, the diode factor m or the depletion region saturation current density J _0DR (depending on the model used) is increased. This behaviour could not be explained so far; this paper discusses if a nonuniform contact resistance of the front side metallisation leads to an increase of m or J _0DR. The theoretical part of the investigation is the simulation of the curve for a cell with two regions with different contact resistance. It was found indeed that m or J _0DR is increased, while the series resistance is not increased as much as expected. The experimental part was the calculation of the J – V curve of a high‐ m solar cell with local contact resistances measured with the so‐called Corescan and the cell's resistanceless J – V curve as measured with the so‐called Suns‐ V _oc method. The calculated curve approximated the actual curve quite well, demonstrating in practice that high diode factors can be explained by nonuniform contact resistance. Copyright © 2004 John Wiley & Sons, Ltd.     

Optimization of interdigitated back contact silicon heterojunction solar cells: tailoring hetero‐interface band structures while maintaining surface passivation

Interdigitated back contact silicon heterojunction (IBC‐SHJ) solar cells have the potential for high open circuit voltage (V_OC) due to the surface passivation and heterojunction contacts, and high short circuit current density (J_SC) due to all back contact design. Intrinsic amorphous silicon (a‐Si:H) buffer layer at the rear surface improve the surface passivation hence V_OC and J_SC, but degrade fill factor (FF) from an “S” shape J–V curve. Two‐dimensional (2D) simulation using “Sentaurus device” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero‐interface. Three approaches to the buffer layer are suggested to improve the FF: (1) reduced thickness, (2) increased conductivity, and/or (3) reduced band gap. Experimental IBC‐SHJ solar cells with reduced buffer thickness (<5 nm) and increased conductivity with low boron doping significantly improves FF, consistent with simulation. However, this has only marginal effect on efficiency since J_SC and V_OC also decrease due to poor surface passivation. A narrow band gap a‐Si:H buffer layer improves cell efficiency to 13.5% with unoptimized passivation quality. These results demonstrate that tailoring the hetero‐interface band structure is critical for achieving high FF. Simulations predicts that efficiences >23% are possible on planar devices with optimized pitch dimensions and achievable surface passivation, and 26% with light trapping. This work provides criterion to design IBC‐SHJ solar cell structures and optimize cell performance. Copyright © 2010 John Wiley & Sons, Ltd.     

Over 24% Efficient Poly(vinylidene fluoride) (PVDF)-Coordinated Perovskite Solar Cells with a Photovoltage up to 1.22 V

Recently, organic–inorganic metal halide perovskite solar cells (PSCs) have achieved rapid improvement, however, the efficiencies are still behind the Shockley–Queisser theory mainly due to their high energy loss (E_LOSS) in open-circuit voltage (V_OC). Due to the polycrystalline nature of the solution-prepared perovskite films, defects at the grain boundaries as the non-radiative recombination centers greatly affect the V_OC and limit the device efficiency. Herein, poly(vinylidene fluoride) (PVDF) is introduced as polymer-templates in the perovskite film, where the fluorine atoms in the PVDF network can form strong hydrogen-bonds with organic cations and coordinate bonds with Pb²⁺. The strong interaction between PVDF and perovksite enables slow crystal growth and efficient defect passivation, which effectively reduce non-radiation recombination and minimize E_LOSS of V_OC. PVDF-based PSCs achieve a champion efficiency of 24.21% with a excellent voltage of 1.22 V, which is one of the highest V_OC values reported for FAMAPb(I/Br)₃-based PSCs. Furthermore, the strong hydrophobic fluorine atoms in PVDF endow the device with excellent humidity stability, the unencapsulated solar cell maintain the initial efficiency of >90% for 2500 h under air ambient of ≈50% humid and a consistently high V_OC of 1.20 V.     

On the SILC mechanism in MOSFET’s with ultrathin oxides

In this paper, n-channel MOSFET’s with oxides 1.2, 1.5 and 1.8 nm thick are studied. In such devices the trap assisted tunnelling (TAT) current required to fit the gate current vs. gate voltage, I_g(V_g), characteristics is thought to flow through Si–SiO₂ interface traps. After stress, it becomes a stress induced leakage current (SILC) which should allow to obtain interface trap density variations with stress. The TAT mechanism is discussed. Then, the Si–SiO₂ interface trap densities extracted using the SILC and charge pumping (CP) are compared. Much larger trap creation rates are viewed by the SILC with regard to CP, questioning the occurrence of the SILC through interface traps. To answer this question the interaction between SILC and CP measurements is investigated.     

Flat band voltage shift and oxide properties after rapid thermal annealing

The flat band voltage (V_fb) shift observed for MOS samples exposed to rapid thermal annealing (RTA) (N₂, 20 s, 1040°C) is examined for (1 0 0), (1 1 0) and (1 1 1) orientation-silicon substrates. Using a mercury gate C–V system, the V_fb shift can be attributed to changes in the electronic properties of the oxide layer and not polysilicon gate effects, as had previously been suggested. In addition, this work indicates that the flat band voltage shift results from a reduction of interface and fixed oxide charge due to the RTA process. The interface and oxide charge densities are related to the density of available bonds for each surface orientation, both before and after an RTA step. Based on these results, we argue that the V_fb shift following RTA is primarily due to a reduction of fixed positive charge in the oxide, and to a lesser degree, to a reduction of negative interface charge. The net effect is that the RTA step reduces the total oxide charge density.     

Influence of Hole‐Transport Layers and Donor Materials on Open‐Circuit Voltage and Shape of I–V Curves of Organic Solar Cells

The effect of injection and extraction barriers on flat heterojunction (FHJ) and bulk heterojunction (BHJ) organic solar cells is analyzed. The barriers are realized by a combination of p‐type materials with HOMOs varying between –5.0 and –5.6 eV as hole‐transport layer (HTL) and as donor in vacuum‐evaporated multilayer p‐i‐metal small‐molecule solar cells. The HTL/donor interface can be seen as a model for the influence of contacts in organic solar cells in general. Using drift‐diffusion simulations we are well able to reproduce and explain the experimental I–V curves qualitatively. In FHJ solar cells the open‐circuit voltage (V_oc) is determined by the donor and is independent of the HTL. In BHJ solar cells, however, V_oc decreases if injection barriers are present. This different behavior is caused by a blocking of the charge carriers at a spatially localized donor/acceptor heterojunction, which is only present in the FHJ solar cells. The forward current is dominated by the choice of HTL. An energy mismatch in the HOMOs leads to kinks in the I–V curves in the cases for which V_oc is independent of the HTL.     

Probing stress effects in HfO2 gate stacks with time dependent measurements

Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO₂ dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (V_t) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on V_t.     

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs

In this work, the impact of dielectric degradation in the MOSFET electrical characteristics after different levels of Fowler-Nordheim (FN) stress has been studied. A decrease in I_SAT and an increase of V_T have been observed. The interface trap density has been extracted from the sub-threshold slope of I_D–V_GS curves. The results show a direct relation between the generated interfacial traps and the observed changes in saturation current and threshold voltage. The wear out effects in the devices have been extrapolated to operation voltages, pointing out that the transistors can fulfill the reliability criteria, even when working in analog applications.     

Influence of compact TiO2 layer on the photovoltaic characteristics of the organometal halide perovskite-based solar cells

A series of perovskite-based solar cells were fabricated wherein a compact layer (CL) of TiO₂ of varying thickness (0–390 nm) was introduced by spray pyrolysis deposition between fluorine-doped tin oxide (FTO) electrode and TiO₂ nanoparticle layer in perovskite-based solar cells. Investigations of the CL thickness-dependent current density–voltage (J–V) characteristics, dark current, and open circuit voltage (V_oc) decays showed a similar trend for thickness dependence. A CL thickness of 90 nm afforded the perovskite-based solar cell with the maximum power conversion efficiency (η, 3.17%). Furthermore, two additional devices, perovskite-based solar cell omitting hole transporting materials layer and cell without the TiO₂ nanoparticles, were designed and fabricated to study the influence of the CL thickness on different electron transport paths in perovskite-based solar cells. Solar cells devoid of TiO₂ nanoparticles, but with perovskite and organic hole-transport materials (HTMs), exhibited sustained improvement in photovoltaic performances with increase in the thickness of CL, which is in contrast to the behavior of classical perovskite-based solar cell and common solid state solar cell which showed optimal photovoltaic performances when the thickness of CL is 90 nm. These observations suggested that TiO₂ nanoparticles play a significant role in electron transport in perovskite-based solar cells.     

Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing

Electrical characterization of the hafnium oxide (HfO₂) gate dielectric films prepared by Hf sputtering in oxygen was conducted. By measuring the current–voltage (I–V) characteristics at temperature ranging from 300 to 500 K, several abnormalities in the I–V characteristics are recorded. For temperatures below 400 K, the current–voltage characteristics in high field region can be plotted with the Fowler–Nordheim law but a stronger temperature dependence was observed. Large flatband voltage shifts in the Al/HfO₂/Si capacitor were observed. The capacitance–voltage characteristics and flatband shifts are found to depend strongly on the post-deposition annealing temperature and duration. To study the reliability against high electric field, constant voltage stressing on the samples was conducted. We found that the trap energy levels are shallow and the oxide traps can be readily filled and detrapped at a low bias voltage.