Design and characteristics of InGaAs/InP composite-channel HFET's

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 /spl mu/m gates, respectively. The average velocity of electrons in the composite channel is 2.9/spl times/10/sup 7/ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.<>     

A large enhancement of the maximum drift velocity of electrons in the channel of a field-effect heterotransistor

It is shown that the optical-phonon momentum quantization in a GaAs quantum well resulting from the introduction of an InAs quantum-dot barrier layer provides for the elimination of inelastic scattering of electrons by optical phonons and, thus, makes the acceleration of electrons above the saturation drift velocity possible. It is shown experimentally that the maximum drift velocity of electrons in high electric fields in AlGaAs/GaAs heterostructure with InAs quantum-dot barriers introduced into the GaAs quantum well exceeds the saturation drift velocity in bulk GaAs by as much as a factor of 10. Such a rise in the maximum drift velocity of electrons ensures increased maximum current density, transconductance, and cutoff frequency of the heterostructure field-effect transistor with quantum dots.     

Novel broad-band bit-synchronization circuit module for optical interconnections

A novel broad-band and ultrafast bit-synchronization circuit module is proposed and fabricated for optical interconnections. In optical packet switch fabric or optical interconnection between electric circuit boards, instantaneous bit synchronization is crucial to properly retime incoming packets with a random phase and reduce the number of preamble overhead bits. The developed bit-synchronization circuit module has a new clock selection circuit, which is configured with a phase comparator and an amplitude comparator. Since device-dependent delay circuits, such as buffer amplifiers or RC phasors, are not adopted, the newly developed clock selection circuit can operate under broad-band frequencies. The bit-synchronization circuit module was fabricated with a Si-bipolar gate array and it can operate at broad-band bit rates of up to 10.5 Gb/s. It also exhibits a power sensitivity penalty as low as 3 dB for 10-Gb/s input signals. The synchronization acquisition time of less than 9 b over the entire 360/spl deg/ phase range was confirmed by experiment.     

Measurement of the high-field drift velocity of electrons in inversion layers on silicon

A new technique is described for the study of high-field transport along semiconductor interfaces. The technique involves observation of the time-of-flight of a packet of carriers across a region of uniform tangential electric field at the semiconductor surface. We use the technique to measure the drift velocity of electrons along the Si-SiO2interface for tangential fields in the range 2.5-4.0 kV/cm. Drift velocities as high as 8.5 × 10⁶cm/s are observed; these values are almost 40% higher than previously reported in the literature.     

Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs

In "type-II" NpN InP-GaAsSb-InP double heterostructure bipolar transistors DHBTs), the p/sup +/ GaAsSb base conduction band edge lies /spl Delta/E/sub C/ above the InP collector conduction band: a small ballistic injection energy /spl Delta/E/sub C/ is thus imparted to electrons as they are launched into the collector. The resulting high initial velocity should in principle reduce the collector signal delay time in comparison to the case where thermal electrons are accelerated by the collector electric field alone. We extract the bias dependence of the average collector electron velocity in high-speed InP-GaAs/sub 0.62/Sb/sub 0.38/-InP DHBTs, and find a maximum average velocity reaching 4/spl times/10/sup 7/ cm/s across a 2000 /spl Aring/ InP collector. This finding provides evidence of the performance advantage afforded by abrupt type-II base/collector (B/C) junctions for collector transport when compared to other B/C junctions.     

Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the quantum well in a selectively doped InAlAs/InGaAs/InAlAs heterostructure has been investigated. Record enhancement of the maximum drift velocity to (2–4) × 10⁷ cm/s in an electric field of 5 × 10³ V/cm has been obtained in a 17-nm-wide quantum well with an undoped 4-nm-thick InAs insert. In the structures with additional doping of the InAs insert, which facilitates an increase in the density of electrons in the quantum well to 4.0 × 10¹² cm^?2, the maximum drift velocity is as high as 2 × 10⁷ cm/s in an electric field of 7 × 10³ V/cm.     

Transport of electrons in a GaAs quantum well in high electric fields

The rates of intrasubband and intersubband scattering of electrons by polar optical and intervalley phonons are determined in relation to the electron energy and width of a deep rectangular quantum well in GaAs. The Monte Carlo method was used to calculate the field dependences of the electron’s drift velocity in quantum wells with the width of 10, 20, and 30 nm. It is shown that the drift velocity in high electric fields in a quantum well vastly exceeds the maximum drift’s saturation velocity in the bulk material.     

Calculation of electron drift velocity at Si avalanche

In evaluating the electron drift velocity at Si avalanche, the electron distribution is obtained by solving the Boltzmann transport equation in the maximum anisotropy truncation (MAT) approximation of Baraff. Improvements are made to the MAT procedure so that the symmetrical part of the distribution function can be obtained in a straightforward manner. The temperature dependence of electron drift velocity is studied by including both optical phonon emission and absorption rather than emission alone. The calculated electron drift velocity varies from1 times 10^{7}to2.9 times 10^{7}cm/s at Si avalanche.     

An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well

Confinement and localization of optical phonons in narrow phonon wells with thin phonon barriers decreases the rate of electron-phonon scattering by polar optical phonons by a factor of many times. An increase in mobility and drift velocity of electrons is experimentally observed in strong electric fields upon introduction of thin phonon barriers into the AlGaAs/GaAs/AlGaAs quantum well.     

160 Gb/s variable length packet/10 Gb/s-label all-optical label switching with wavelength conversion and unicast/multicast operation

We report on the first demonstration of all-optical label switching (AOLS) with 160 Gb/s variable length packets and 10 Gb/s optical labels. This result demonstrates the transparency of AOLS techniques from previously demonstrated 2.5 Gb/s to this 160 Gb/s demonstration using a common routing and packet lookup framework. Packet forwarding/conversion, optical label erasure/re-write and signal regeneration at 160 Gb/s is achieved using a WDM Raman enhanced all-optical fiber cross-phase modulation wavelength converter. It is also experimentally shown that this technique enables packet unicast and multicast operation at 160 Gb/s. The packet bit-error-rate is measured for all optical label switched 16 /spl times/ 10 Gb/s channels and error free operation is demonstrated after both label swapping and packet forwarding.     

Experimental evidences of carrier distribution and behavior in frequency in a BMFET Modulator

We propose a novel method to monitor the carrier plasma distribution in a bipolar mode field effect transistor light modulator, using standard emission microscopy. Our bi-dimensional maps validate the theoretical predictions of plasma distribution as a function of the device bias. Dynamical measurements provide an experimental evidence of a frequency threshold in the electric field induced plasma distribution. Below 500 kHz generation/recombination processes while above drift phenomena allow the plasma localization in the device. An effective carrier lifetime /spl ges/2 /spl mu/s was extrapolated.     

High-performance optical-label switching packet routers and smart edge routers for the next-generation Internet

This paper discusses the architecture, protocol, analysis, and experimentation of optical packet switching routers incorporating optical-label switching (OLS) technologies and electronic edge routers with traffic shaping capabilities. The core optical router incorporates all-optical switching with contention resolution in wavelength, time, and space domains. It is also capable of accommodating traffic of any protocol and format, and supports packet, flow, burst, and circuit traffic. The edge router is designed to achieve traffic shaping with consideration for quality of service and priority based class-of-service. Simulation results show packet loss rates below 0.3% at load 0.7 and jitter values below 18 /spl mu/s. The traffic shaping reduces the packet loss rate by a factor of /spl sim/5 while adding negligible additional latency. The OLS core routers and the electronic edge routers are constructed including the field-programmable-gate-arrays incorporating the wavelength-aware forwarding and contention resolution algorithms. The experiment shows optical-label-based packet switching with a packet loss rate near 0.2%.     

Demonstration of optical label processing with timing pulse generator

A timing pulse generator that extracts the first pulse of a packet and uses it in a pattern-matching optical label processor is proposed. The label processor is demonstrated in a 1/spl times/2 optical packet switching system. The packet switching system operation was polarisation independent for 10 Gbit/s packets.     

All-optical packet compression of variable length packets from 40 to 1500 B using a gated fiber loop

A scalable loop-based packet compression scheme capable of handling variable length Internet protocol packets, from 40 to 1500 B, is proposed and demonstrated. The technique uses per packet variable compression ratio to achieve fixed compressed output packet size independent of input packet size. This technique allows variable length packets to be stored in fixed delay optical buffers and has application to optical packet switching, optical multiplexing, and optical grooming. These results demonstrate the largest packet size compressed to date. Error-free compression and verification of 1500-B packets compression from 2.5 to 10 Gb/s is demonstrated with a measured power penalty of /spl sim/2.2 dB.     

Temperature dependence of the high-field velocity of electrons in n GaAs

The drift velocity of electrons at high electric fields has been measured in n GaAs by the time-of-flight technique. The range of electric fields used was 20 to 85 kV/cm and the experiments were performed at temperatures of 158, 300, 340 and 400 K. All the results show the velocity to decrease slowly as the field is increased.     

Active vertical-coupler-based optical crosspoint switch matrix for optical packet-switching applications

Packet-switching characteristics are optimized across an integrated 4 /spl times/ 4 optical crosspoint switch matrix consisting of active vertical-coupler-based switch cells. Optical gain difference between the shortest and the longest paths less than 3 dB is demonstrated. Bit error rate (BER) and power penalty measurements during packet routing have also been carried out over the entire 4 /spl times/ 4 matrix. At a 10-Gb/s packet data rate, a less than 1-dB power penalty is observed across the switch matrix, and the possibility for error-free packet routing is demonstrated with no BER floor observed.     

Thermo-optical modulation at /spl lambda/=1.5 /spl mu/m in an /spl alpha/-SiC-/spl alpha/-Si-/spl alpha/-SiC planar guided-wave structure

A planar waveguide based on an amorphous silicon-amorphous silicon carbide heterostructure is proposed for the realization of passive and active optical components at the wavelengths /spl lambda/=1.3-1.5 /spl mu/m. The waveguide has been realized by low temperature plasma enhanced chemical vapor deposition and is compatible with the standard microelectronic technologies. Thermo-optical induced modulation at /spl lambda/=1.5 /spl mu/m is demonstrated in this waveguide. Numerical simulations predict that operation frequencies of about 3 MHz are possible. The measurements have also allowed the determination of the previously unknown thermo-optical coefficient of undoped amorphous silicon at this wavelength.     

Electrically injected photonic crystal edge-emitting quantum-dot light source

An electrically injected photonic crystal (PC) edge-emitting light source with horizontally coupled waveguide, based on a GaAs heterostructure with self-organized InGaAs quantum dots emitting near 1 /spl mu/m, is demonstrated. The emission spectra and near-field images indicate that the spontaneous emission from the low-Q resonant PC cavity is coupled to an adjacent PC missing defect waveguide and guided over the 70-/spl mu/m waveguide length.     

Full characterization of packaged Er-Yb-codoped phosphate glass waveguides

We present a procedure for the characterization of packaged Er-Yb-codoped phosphate glass waveguides. The procedure is based on precise measurements of the output optical powers when the waveguide is diode-laser pumped at 980 nm. The dependence of these optical powers on the input pump power is then fitted to the results from a numerical model that describes in detail the propagation of the optical powers inside the waveguide. The best fit is obtained for the following parameters: the signal wavelength scattering losses are /spl alpha/(1534)=8.3/spl times/10/sup -2/ dB/cm, the Yb/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 5.4/spl times/10/sup -25/ m/sup 2/ and 7.0/spl times/10/sup -25/ m/sup 2/, the Er/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 1.6/spl times/10/sup -25/ m/sup 2/ and 1.2/spl times/10/sup -25/ m/sup 2/, the Yb/sup 3+/--Er/sup 3+/ energy-transfer coefficient is 1.8/spl times/10/sup -23/ m/sup 3//s and the cooperative-upconversion coefficient is 8/spl times/10/sup -25/ m/sup 3//s. An approximate method is introduced that allows the determination of the absorption and emission cross section distributions for the erbium /sup 4/I/sub 13/2//spl hArr//sup 4/I/sub 15/2/ transition from the amplified spontaneous emission power spectrum.     

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 10²to 6 . 10⁴V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.