共查询到20条相似文献,搜索用时 0 毫秒
1.
Fresina M.T. Ahmari D.A. Mares P.J. Hartmann Q.J. Feng M. Stillman G.E. 《Electron Device Letters, IEEE》1995,16(12):540-541
We have demonstrated self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with excellent dc, microwave, and noise performance. A 3×10 μm2 emitter finger device achieved a cutoff frequency of fT=66 GHz and a maximum frequency of oscillation of fmax=109 GHz. A minimum noise figure of 1.12 dB and an associated gain of 11 dB were measured at 4 GHz. These results are the highest combined fT+fmax and the lowest noise figure reported for an InGaP/GaAs HBT and are attributed to material quality and the use of self-aligned base contacts. These data clearly demonstrate the viability of InGaP/GaAs HBT's for high-speed, low-noise circuit applications 相似文献
2.
Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effect on the amplifier’s RF performance. The SPICE Gummel–Poon (SGP) model parameters were extracted from the pre- and post-stress HBT data and used in Cadence SpectreRF simulation. The amplifier’s post-stress RF characteristics, such as the output power and power-added efficiency (PAE), remained almost unchanged even though the post-stress HBT’s DC current gain had dropped to 73.6% of its initial value. 相似文献
3.
《Electron Device Letters, IEEE》1997,18(11):559-561
To improve electrical isolation and simplify the heterojunction bipolar transistor (HBT) fabrication process, a semi-insulating InGaP buffer layer has been employed in an InGaP/GaAs HBT. Data is presented that demonstrates this buffer layer serves as an excellent isolation material. In addition, high-frequency HBT's have been fabricated and characterized to show that the buffer layer does not degrade device performance 相似文献
4.
Ren F. Abernathy C.R. Pearton S.J. Lothian J.R. Wisk P.W. Fullowan T.R. Chen Y.-K. Yang L.W. Fu S.T. Brozovich R.S. Lin H.H. 《Electron Device Letters, IEEE》1993,14(7):332-334
As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for microwave applications, InGaP/GaAs HBTs with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) with excellent DC, RF, and microwave performance are demonstrated. As previously reported, with a 700-Å-thick base layer (135-Ω/sq sheet resistance), a DC current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2-μm×5-μm emitter area device. A device with 12 cells, each consisting of a 2-μm×15-μm emitter area device for a total emitter area of 360 μm2, was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50% 相似文献
5.
Mack M.P. Bayraktaroglu B. Kehias L. Barrette J. Neidhard R. Fitch R. Scherer R. Davito D. West W. 《Electronics letters》1993,29(12):1068-1069
The first high power demonstration of an InGaP/GaAs heterojunction bipolar transistor is presented. Multifinger selfaligned HBTs were tested at 3 GHz. A maximum output power of 2.82 W CW was obtained for a 600 mu m/sup 2/ emitter area device (4.7 mW/ mu m/sup 2/ power density) with an attendant gain of 6.92 dB; simultaneously, the device exhibited 55.2% power added efficiency, 69.1% collector efficiency and 8.0*10/sup 4/ A/cm/sup 2/ emitter current density.<> 相似文献
6.
Thomas S.G. Johnson E.S. Tracy C. Maniar P. Xiuling Li Roof B. Hartmann Q. Ahmari D.A. 《Electron Device Letters, IEEE》2005,26(7):438-440
In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates. 相似文献
7.
K.W. Alt R.E. Yeats C.P. Hutchinson D.K. Kuhn T.S. Low M. Iwamoto M.E. Adamski R.L. Shimon T.E. Shirley M. Bonse F.G. Kellert D.C. DAvanzo 《Microelectronics Reliability》2007,47(8):1175-1179
A novel circuit for measuring the infant mortality rate in InGaP/GaAs HBT Technology is presented. The circuit allows reliability stressing to be performed on as many as 100,000 transistors per wafer and is necessary in order to predict the infant circuit failure rate in circuits with >500 transistors without costly burn-in screens. This new circuit allows for the rapid identification of failed transistors and subsequent failure analysis to allow for process improvements. A variation of the same circuit has also been used to estimate the activation energy, Ea, of the infant failure mechanism. Rough estimates of Ea indicate that the infant failure mechanism is 0.5 eV, and that there may be two distinct failure mechanisms responsible for infant failures. Process defects have not been found on the vast majority of failed transistors, and there is good correlation between the substrate dislocation density and the infant failure rate. We have concluded that substrate dislocations are the leading cause of infant mortality in our HBT process. 相似文献
8.
During elevated-temperature bias stress, InGaP/GaAs HBT's grown by MOCVD show a medium-term degradation in current gain of about 20%, with an activation energy of 0.64 eV. They also show a corresponding decrease in base resistance and an increase in turn-on voltage. InGaP/GaAs HBTs grown by GSMBE, however, do not show this degradation. SIMS measurements show a five times greater than GSMBE-epi hydrogen concentration of about 1019 cm-3 in the base layer of the MOCVD-grown epi. The degradation can be explained by acceptor depassivation due to hydrogen out-diffusion from the epi during stress 相似文献
9.
Ramberg L.P. Chen Y.-K. Enquist P.M. Najjar F.E. Eastman L.F. Kavanagh K.L. 《Electronics letters》1986,22(21):1123-1125
The performance of bipolar devices and circuits in the novel lattice-strained GaInAs/GaAs materials system show an improving trend with increased In composition in the base. An fT of 8 GHz has been measured using an 8 ?m emitter stripe width and 8% In. A small-signal model is presented. 相似文献
10.
Chang M.F. Asbeck P.M. Wang K.C. Sullivan G.J. Miller D.L. 《Electronics letters》1986,22(22):1173-1174
Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2.0 ?m is 45 GHz. NTL ring oscillators have operated at 16.5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing These are record speeds for bipolar circuits. 相似文献
11.
Enquist P.M. Hutchby J.A. Chang M.F. Asbeck P.M. Sheng N.H. Higgins J.A. 《Electronics letters》1989,25(17):1124-1125
Base doping densities near 10/sup 20/ cm/sup -3/ and emitter doping densities near 7*10/sup 17/ cm/sup -3/ have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in f/sub max/=94 GHz and f/sub t/=45 GHz. To the authors' knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.<> 相似文献
12.
《Solid-State Circuits, IEEE Journal of》1981,16(6):648-652
Describes the design, fabrication, and performance of GaAs monolithic low-noise broad-band amplifiers intended for broadcast receiver antenna amplifier, IF amplifier, and instrumentation applications. The process technology includes the use of Czochralski-grown semiinsulating substrates, localized implantation of ohmic and FET channel regions, and silicon nitride for passivation and MIM capacitors. The amplifiers employ shunt feedback to obtain input matching and flat broad-band response. One amplifier provides a gain of 24 dB, bandwidth of 930 Mhz, and noise figure of 5.0 dB. A second amplifier provides a gain of 17 dB, bandwidth of 1400 MHz, and noise figure of 5.6 dB. Input and output VSWR's are typically less than 2:1 and the third-order intercept points are 28 and 32 dB, respectively. Improved noise figure and intercept point can be achieved by the use of external RF chokes. 相似文献
13.
A GaAlAs/GaAs heterojunction bipolar transistor has been developed and tested. A double base structure was adopted to facilitate critical selective etching problems. An emitter-collector breakdown voltage VCEO as high as 80 V was achieved. Maximum frequency of oscillationfmax of 850 MHz and a cutoff frequency fT of 1.6 GHz were realised. The current-gain/temperature curve shows that the transistor can be operated at temperatures up to 350°C. 相似文献
14.
Oka T. Ouchi K. Uchiyama H. Taniguchi T. Mochizuki K. Nakamura T. 《Electron Device Letters, IEEE》1997,18(4):154-156
High-speed InGaP/GaAs heterojunction bipolar transistors (HBT's) with a small emitter area are described. WSi is used as the base electrode to fabricate HBT's with a narrow base contact width and a buried SiO2 structure. An HBT with an emitter area of 0.8×5 μm exhibited an fT of 105 GHz and an fmax of 120 GHz. These high values are obtained due to the reduction of CBC by using buried SiO2 with a narrow base contact width, indicating the great potential of GaAs HBT's for high-speed and low-power circuit applications 相似文献
15.
Arayashiki Y. Ohkubo Y. Amano Y. Takagi A. Ejima M. Matsuoka Y. 《Electronics letters》2004,40(4):244-245
A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz. 相似文献
16.
The injection performance of abrupt emitter HBT's and related effects on the device characteristics are studied by taking an Npn Al 0.25Ga0.75As/GaAs/GaAs HBT as an example. In order to take into account the coupled transport phenomena of drift-diffusion and tunneling-emission processes across the abrupt heterojunction in a single coupled formulation, a numerical technique based on the boundary condition approach is employed. Compared to previous numerical investigations relying on either a drift-diffusion or a tunneling-emission scheme, more complete and accurate characterization of abrupt emitter HBT's has been achieved in this study. It is demonstrated that the presence of abrupt discontinuities of the conduction and valence bands at the emitter-base junction brings several different features to the injection efficiency and recombination characteristics of abrupt emitter HBT's compared to graded emitter HBT's. Based on investigations of the emitter doping effects on the current drive capability and device gain, an optimum emitter doping density is determined for a given structure. When the emitter-base p-n junction of the abrupt emitter HBT is slightly displaced with respect to the heterojunction, significant changes in the electrical characteristics are observed. A small displacement of the p-n junction into the narrow bandgap semiconductor is found to be very attractive for the performance optimization of abrupt emitter HBT's 相似文献
17.
Swartz R.G. Lunardi L.M. Malik R.J. Archer V.D. Feuer M.D. Walker J.F. Fullowan T.R. 《Electronics letters》1989,25(2):118-119
An AlGaAs/GaAs heterojunction bipolar transistor (HBT) decision circuit has been designed and characterised for optical communications, using 3.5 mu m emitter width transistors with cutoff frequency of 27 GHz. The maximum bitrate for a BER of 10/sup -9/ was 4.2 Gbit/s. At 2.0 Gbit/s, the clock phase margin was 240 degrees .<> 相似文献
18.
Chen W.B. Su Y.K. Lin C.L. Wang H.C. Chen S.M. Su J.Y. Wu M.C. 《Electron Device Letters, IEEE》2003,24(10):619-621
A partially oxidized Al/sub 0.98/Ga/sub 0.02/As layer was introduced between the emitter and base of collector-up heterojunction bipolar transistors (C-up HBTs) to suppress the leakage current and improve the current gain. Dependence of device current gain and leakage current on oxidation temperature was investigated. At lower oxidation temperature, the current gain can be effectively improved. Current gain and base sheet resistance were 79 and 203 ohm/sq. for the C-up HBT oxidized at 400/spl deg/C. 相似文献
19.
Double heterojunction NpN GaAlAs/GaAs bipolar transistor 总被引:1,自引:0,他引:1
Double heterojunction NpN Ga0.7Al0.3As/GaAsAs/Ga0.7Al0.3-As bipolar transistors have been developed and tested. Besides a wide-gap emitter a wide-gap collector was added to form the NpN double heterojunction structure, which can be operated as a bipolar transistor in bidirection. I/V measurements show that the turn-on voltage of about 0.2 V, which is the normal case in Npn wide-gap emitter GaAsAs/Ga0.7Al0.3As transistors (common emitter), is eliminated. As compared with the Npn GaAs transistor the storage time ts of the NpN GaAs transistor is reduced by a factor of about 2. 相似文献
20.
Topham P.J. Long A.P. Saul P.H. Parton J.G. Hollis B.A. Hiams N.A. Goodfellow R.C. 《Solid-State Circuits, IEEE Journal of》1989,24(3):686-689
A compact wideband amplifier (or gain block) designed around a Darlington pair of GaAs/GaAlAs heterojunction bipolar transistors (HBTs) is discussed. This circuit has been fabricated by an ion-implanted process with a transistor f t of 40 GHz. Two variants of the circuit gave either a 8.5-dB gain with a DC-to-5-GHz 3-dB bandwidth or a 13-dB gain with a DC-to-3-GHz bandwidth. These amplifiers gave 11.8- and 18.3-dBm output, respectively, at 1-dB gain compression 相似文献